CN202671707U - Secondary feeding device for vertical pulling silicon monocrystal - Google Patents
Secondary feeding device for vertical pulling silicon monocrystal Download PDFInfo
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- CN202671707U CN202671707U CN 201220201727 CN201220201727U CN202671707U CN 202671707 U CN202671707 U CN 202671707U CN 201220201727 CN201220201727 CN 201220201727 CN 201220201727 U CN201220201727 U CN 201220201727U CN 202671707 U CN202671707 U CN 202671707U
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- push rod
- barrel
- silicon monocrystal
- blanking
- secondary feeding
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Abstract
The utility model relates to a secondary feeding device for a vertical pulling silicon monocrystal. The secondary feeding device comprises a hollow cylindrical feed barrel and a push rod barrel arranged in the feed barrel, wherein a push rod is arranged in the push rod body, the lower portion of the push rod is a cone, a blanking switch is arranged at the bottom of the feed barrel, and the blanking switch is composed by splicing a plurality of pieces into a round ring after shutting the pieces together. The diameter of the round ring is smaller than that of the round lower edge of the lower portion of the cone of the push rod. A blanking opening is designed again, and sizes of the blanking opening can be adjusted according to the sizes of silicon materials in secondary feeding. Blanking failure due to silicon material congestion does not appear during the secondary feeding and continuous growth. The device is not only suitable for the secondary feeding and crystal pulling, but also suitable for feeding and the crystal pulling for many times. The device is suitable for growth of the vertical pulling silicon monocrystal but also suitable for the growth of vertical pulling monocrystals of similar materials such as germanium and gallium arsenide.
Description
Technical field
The utility model relates to the design and manufacture technical field of straight pulling silicon single crystal furnace, particularly a kind of czochralski silicon monocrystal secondary charging device.
Background technology
Silicon single crystal is a kind of important materials of preparation crystal-silicon solar cell.Vertical pulling method is one of topmost method of growing single-crystal silicon, and its process comprises reinforced, the fusing of intensification silicon material, and crystal pulling, cooling goes out crystalline substance.Generally, once heating up later can only growing crystal one, after this must wait until and cool off afterwards in new crucible the filler crystal pulling that again heats up.This technology has caused larger energy consumption to waste, and simultaneously because crucible is broken after cooling, this technology heats up each time, and lowering the temperature circulates must consume the quartz crucible of a costliness.If can on existing single crystal growing furnace, realize the continuous growth of vertical pulling silicon without temperature-fall period, will greatly reduce energy consumption and quartz crucible consumption, reduce production costs, enhance productivity.
Patent " a kind of mono-crystalline silicon thermal-field secondary feeding device " (patent No.: 200820303350.5) disclose a kind of like this device, can at high temperature carry out secondary charging by this device, realized continuously growth.But the device of this patent disclosure has great defective in actual applications, can often occur that silicon material handle assembly feed opening is blocked and the situation that can't expect down crucible.Disclosed secondary charging continuous growing device similarly also has same problem in other patents.This problem can be by improving with the tiny silicon material of size, but the tiny general purity of silicon material of size is lower, uses such silicon material to carry out continuous crystal-pulling and may cause occuring in the follow-up single crystal growing the serious consequences such as disconnected rib.Therefore, secondary charging continuously growth crucial or to solve in the feeding device can't blanking problem.
The utility model content
The technical problems to be solved in the utility model is: a kind of czochralski silicon monocrystal secondary charging continuous growing device is provided, need lower the temperature after single crystal growth process is once heated up and can carry out the secondary charging crystal pulling.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of czochralski silicon monocrystal secondary charging device, comprise the hollow circular cylinder barrel and be arranged on the interior push rod cylinder of barrel, be provided with the push rod that the bottom is cone in the described push rod cylinder, described barrel bottom is provided with the blanking switch, the blanking switch is comprised of many lobes, piece together an annulus after closing up, the diameter of described annulus is less than the diameter on edge under the circle of the cone bottom of push rod.
Specifically, the lobe number of blanking switch described in the utility model is 2 ~ 4 lobes, can guarantee so the situation that feed opening is blocked can not occur, and can guarantee that the continuous growth of secondary charging carries out smoothly.
Blanking switch described in the utility model and barrel junction are provided with the limit switch of blanking switch.Can regulate like this after the blanking switch opens angle with vertical direction, control blanking velocity with this, avoid that silicon liquid splashes in the reinforced process.
For the ease of changing and using, even circumferential distributes and is provided with upper limit and lower limit on the wall of the outer-rotor of barrel described in the utility model, and the diameter of described lower limit outer is greater than thermal field furnace upper cover through-hole diameter.
Further, barrel internal welding described in the utility model is connected to rock arm, guarantees the balance of push rod with this.
The beneficial effects of the utility model are, solved the defective that exists in the background technology, compare with disclosed device in the passing patent, the utility model has redesigned feed opening, its size can be regulated according to the silicon material size of secondary charging, at secondary charging and can not occur in the process of growth continuously because of the silicon material block up can't blanking phenomenon; This device is not limited only to secondary charging and crystal pulling, also is applicable to repeatedly feed in raw material and crystal pulling; This device is not limited only to Modelling of Crystal Growth in CZ-Si Pulling, also is applicable to the growth of other analogous materials (such as germanium, gallium arsenide etc.) pulling of crystals.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the structural representation of preferred embodiment of the present utility model;
Among the figure: 1, barrel, 2, upper limit, 3, push rod, 4, the push rod cylinder, 5, lower limit, 6, the limit switch of blanking switch, 7, the conical bottom, 8, rock arm, 9, the blanking switch.
Embodiment
With preferred embodiment the utility model is described in further detail by reference to the accompanying drawings now.These accompanying drawings are the synoptic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
A kind of czochralski silicon monocrystal secondary charging device as shown in Figure 1, comprise hollow circular cylinder barrel 1 and the push rod cylinder 4 that is arranged in the barrel 1, being provided with the bottom in the push rod cylinder 4 is the push rod 3 of cone, barrel 4 bottoms are provided with blanking switch 9, blanking switch 9 and barrel 1 junction are provided with the limit switch 6 of blanking switch, blanking switch 9 is comprised of 4 lobes, pieces together an annulus after closing up, and the diameter of annulus is less than the diameter on edge under the circle of the cone bottom 7 of push rod.
Even circumferential distributes and is provided with upper limit 2 and lower limit 5 on the wall of the outer-rotor of barrel, and the diameter of lower limit 5 outers is greater than thermal field furnace upper cover through-hole diameter; The barrel internal welding is connected to rock arm 8.
During use, step is as follows:
1, open the seed crystal chamber, the seed crystal on the lifting head is unloaded, change filling this device of closing in silicon material and bottom, fastening by chuck.Wherein, bottom switch can be regulated openings of sizes in advance according to silicon material size.
2, this device is promoted in the seed crystal chamber, guarantees that its underpart is higher than the thermal field bell.
3, open the thermal field bell, this device of slow decreasing, the lower limit of device can be blocked by the bell edge, and the push rod in the device can continue to descend under silicon material and action of gravity own, the charging opening of being closed at the bottom of the push rod also can open to predetermined location gradually, and the silicon material is added in the crucible.After all opening, reinforced switch stops the lifting head that descends.
4, treat reinforced complete, lifting gear, above device leaves the thermal field bell fully after, close bell.
5, withdrawing device is changed seed crystal at lifting head, closes the seed crystal chamber, can carry out the secondary crystal pulling.
What describe in the above specification sheets is embodiment of the present utility model, various not illustrating is construed as limiting flesh and blood of the present utility model, the person of an ordinary skill in the technical field after having read specification sheets can to before described embodiment make an amendment or be out of shape, and do not deviate from essence and the scope of utility model.
Claims (5)
1. czochralski silicon monocrystal secondary charging device, comprise the hollow circular cylinder barrel and be arranged on the interior push rod cylinder of barrel, be provided with the push rod that the bottom is cone in the described push rod cylinder, it is characterized in that: described barrel bottom is provided with the blanking switch, the blanking switch is comprised of many lobes, piece together an annulus after closing up, the diameter of described annulus is less than the diameter on edge under the circle of the cone bottom of push rod.
2. czochralski silicon monocrystal secondary charging device as claimed in claim 1, it is characterized in that: the lobe number of described blanking switch is 2 ~ 4 lobes.
3. czochralski silicon monocrystal secondary charging device as claimed in claim 1, it is characterized in that: described blanking switch and barrel junction are provided with the limit switch of blanking switch.
4. czochralski silicon monocrystal secondary charging device as claimed in claim 1 is characterized in that: even circumferential distributes and is provided with upper limit and lower limit on the wall of the outer-rotor of described barrel, and the diameter of described lower limit outer is greater than thermal field furnace upper cover through-hole diameter.
5. czochralski silicon monocrystal secondary charging device as claimed in claim 1, it is characterized in that: described barrel internal welding is connected to rock arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220201727 CN202671707U (en) | 2012-05-07 | 2012-05-07 | Secondary feeding device for vertical pulling silicon monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220201727 CN202671707U (en) | 2012-05-07 | 2012-05-07 | Secondary feeding device for vertical pulling silicon monocrystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202671707U true CN202671707U (en) | 2013-01-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220201727 Expired - Fee Related CN202671707U (en) | 2012-05-07 | 2012-05-07 | Secondary feeding device for vertical pulling silicon monocrystal |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243381B (en) * | 2013-05-23 | 2015-06-24 | 上海九晶电子材料股份有限公司 | Secondary feeding device and method of single crystal furnace |
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
| WO2017063410A1 (en) * | 2015-10-15 | 2017-04-20 | 严利容 | Secondary packing apparatus for single crystal furnace |
| CN111455452A (en) * | 2020-04-10 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Feeding device, crystal pulling furnace and feeding method |
-
2012
- 2012-05-07 CN CN 201220201727 patent/CN202671707U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243381B (en) * | 2013-05-23 | 2015-06-24 | 上海九晶电子材料股份有限公司 | Secondary feeding device and method of single crystal furnace |
| WO2017063410A1 (en) * | 2015-10-15 | 2017-04-20 | 严利容 | Secondary packing apparatus for single crystal furnace |
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
| CN105420806B (en) * | 2015-12-25 | 2018-04-03 | 安徽华芯半导体有限公司 | A kind of single crystal growing furnace secondary charging system |
| CN111455452A (en) * | 2020-04-10 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Feeding device, crystal pulling furnace and feeding method |
| CN111455452B (en) * | 2020-04-10 | 2021-11-30 | 西安奕斯伟材料科技有限公司 | Feeding device, crystal pulling furnace and feeding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130116 Termination date: 20180507 |
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| CF01 | Termination of patent right due to non-payment of annual fee |