CN202246997U - Double-layer crucible - Google Patents
Double-layer crucible Download PDFInfo
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- CN202246997U CN202246997U CN2011203507908U CN201120350790U CN202246997U CN 202246997 U CN202246997 U CN 202246997U CN 2011203507908 U CN2011203507908 U CN 2011203507908U CN 201120350790 U CN201120350790 U CN 201120350790U CN 202246997 U CN202246997 U CN 202246997U
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- crucible
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- layer crucible
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Abstract
The embodiment of the utility model discloses a double-layer crucible which comprises an outer-layer crucible, an inner-layer crucible, an interlayer positioned between the inner wall of the outer-layer crucible and the outer wall of the inner-layer crucible, and a through hole that is positioned at the bottom of the side wall of the inner-layer crucible and penetrates through the side wall of the inner-layer crucible, wherein the same crucible bottom surface is shared by the outer-layer crucible and the inner-layer crucible, and certain spacing is reserved between the inner wall of the outer-layer crucible and the outer wall of the inner-layer crucible. By utilizing the double-layer crucible for pulling crystals, the crystals can grow simultaneously while charging so as to realize continuous crystal pulling till reaching the designed life of the crucible, so that the utilization rate of the crucible is increased, and the production efficiency of the crystals is further improved.
Description
Technical field
The utility model relates to silicon single crystal manufacturing technology field, relates in particular to a kind of double crucible.
Background technology
A kind of optional method of preparation large-diameter silicon wafer is in crucible, to use the granulous polysilicon, and it can progressively introduce silicon in the process of silicon fusing makes in big crucible stress reduce to minimum.And crucible is placed in the single crystal growing furnace, when the silicon in the crucible is heated by crystal-pulling furnace, becomes liquid, is called melt.A perfect seed crystal silicon touches the vertical pulling device and begins the new crystalline structure of growing, and promptly seed crystal is placed on bath surface and pull-up lentamente in rotary course, and the sense of rotation of its sense of rotation and crucible is opposite.
Along with seed crystal leaves melt in straight pulling process, the liquid on the melt can improve because of the tension force on surface.Interface distribute heat on the seed crystal also solidifies towards the direction of melt downwards.Along with seed crystal is rotating from melt lira, there is the silicon single crystal in same crystal orientation just to grow out with seed crystal.When seed crystal rotated, crucible was also in rotation.Different silicon ingot growth results depends on seed crystal and crucible sense of rotation and speed separately.
But in the prior art, crucible is according to size, and charge is limited.During growing crystal, in crucible, once fill up the silicon material, grow after the silicon material fusing, remain small volume of solution by the time after, finish up and come out of the stove, thereby make that the crucible utilization ratio is lower, and then cause the production efficiency of silicon single crystal lower.
The utility model content
For solving the problems of the technologies described above, the utility model embodiment provides a kind of double crucible, and when having solved in the prior art growing crystal, the crucible utilization ratio is lower, and then causes the lower problem of production efficiency of silicon single crystal.
For addressing the above problem, the utility model embodiment provides following technical scheme:
The utility model discloses a kind of double crucible, this double crucible comprises:
Outer crucible and inner crucible, said outer crucible and the shared same crucible of inner crucible bottom surface, and have a determining deviation between the outer wall of the inwall of said outer crucible and said inner crucible;
Be positioned at the interlayer between the outer wall of inwall and inner crucible of said outer crucible;
Be positioned at said inner crucible sidewall bottom and run through the through hole of said inner crucible sidewall.
Preferably, the material of said double crucible is high temperature resistant clean material.
Preferably, the material of said double crucible is a silit.
Preferably, the material of said double crucible is a silicon nitride.
Preferably, the material of said double crucible is a zirconium white.
Preferably, said through hole is shaped as circle.
Preferably, said through hole is shaped as crescent.
Compared with prior art; The technical scheme that the utility model provided adopts double crucible when growing crystal, substituted individual layer crucible of the prior art; This double crucible comprises outer crucible and inner crucible; Wherein, the interlayer between said outer crucible inwall and the said inner crucible outer wall is charging zone and melting area, and said inner crucible is the crystal growth district.When drawing crystal.In said interlayer, feed in raw material, after the silicon material gets into said interlayer, receive the influence of said outer crucible temperature, begin fusing, become silicon solution, silicon solution gets into said inner crucible through being positioned at the through hole of said inner crucible sidewall bottom, the beginning growing crystal.So just realized while the growing crystal that feeds in raw material; Thereby when having solved in the prior art growing crystal; Owing in crucible, once fill up the silicon material and carry out growing crystal; After the residue small volume of solution, the crucible utilization ratio of coming out of the stove and causing with regard to finishing up is low, and then causes the inefficient problem of monocrystalline silicon production.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment of the utility model, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of the double crucible that the utility model provided;
Fig. 2 is the structural representation of the profile of the double crucible that the utility model provided.
Embodiment
For the characteristics and the advantage that make the utility model more remarkable; To combine the accompanying drawing among the utility model embodiment below; Technical scheme among the utility model embodiment is carried out clear, intactly description; Obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
A lot of details have been set forth in the following description so that make much of the utility model; But the utility model can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model does not receive the restriction of following disclosed specific embodiment.
Secondly, the utility model combines synoptic diagram to be described in detail, when the utility model embodiment is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is example, and it should not limit the scope of the utility model protection at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Said as the background technology part, during the manufacture order crystal silicon, the crucible utilization ratio is lower in the prior art; And then cause production efficiency also lower; This is because single crystal growing furnace growing crystal device of the prior art whenever adds a silicon material and can only draw a crystal, can not continue crystal pulling; Thereby cause the crucible utilization ratio low, and then cause production efficiency low.
In view of this, the utility model discloses a kind of double crucible, this double crucible comprises:
Outer crucible and inner crucible, said outer crucible and the shared same crucible of inner crucible bottom surface, and have a determining deviation between the outer wall of the inwall of said outer crucible and said inner crucible;
Be positioned at the interlayer between the outer wall of inwall and inner crucible of said outer crucible;
Be positioned at said inner crucible sidewall bottom and run through the through hole of said inner crucible sidewall.
To combine accompanying drawing that this double crucible is carried out detailed description below.
With reference to figure 1 and Fig. 2, wherein, Fig. 1 is the structural representation of the double crucible that the utility model provided; Fig. 2 is the structural representation of the profile of the double crucible that the utility model provided.Illustrated among the figure: outer crucible 1, interlayer 2, inner crucible 3, through hole 4.
The disclosed double crucible of the utility model embodiment; Outside said, between crucible 1 inwall and said inner crucible 3 outer walls certain interval is arranged; It is said interlayer 2; And the bottom at said inner crucible 3 sidewalls is provided with through hole 4, and said through hole 4 runs through the sidewall of said inner crucible 3, is used to be communicated with said interlayer 2 and said inner crucible 3.During growing crystal, in said interlayer 2, add the silicon material, because said interlayer 2 is near said outer crucible 1, and the outer wall of said outer crucible 1 links to each other with well heater, and therefore, said interlayer 2 interior temperature are higher.After the solid silicon material gets into said interlayer 2, receive said outer crucible 1 Influence of Temperature, begin fusing, become silicon solution.The silicon solution that is fused into flows into said inner crucible 3 through the through hole 4 of being located at said inner crucible 3 sidewalls bottom.After silicon solution gets into said inner crucible 3, utilize seed crystal to carry out seeding, the beginning growing crystal.
Because said interlayer 2 and said inner crucible 3 are connected through said through hole 4, therefore, said interlayer 2 is equal with the liquid level in the said inner crucible 3.Be accompanied by the crystalline growth; Liquid level in the said inner crucible 3 descends, and is corresponding, and the liquid level in the coupled said interlayer 2 also descends; Meanwhile; Extraneous situation according to excess silicon material in the said interlayer 2 continues to add the silicon material in said interlayer 2, thereby guarantees that the silicon solution that has capacity in the said inner crucible 3 carries out crystal growth.So just prepare in the process, while realized the growing crystal that feeds in raw material at crystalline.After crystal growth is arrived to a certain degree, only need to take out crystal and get final product, and continuation crystal pulling in the said double crucible, thereby make that the crystal pulling process can continue to carry out, reach life up to crucible.
And the said interlayer 2 of said double crucible is isolated through the sidewall of said inner crucible 3 with said inner crucible 3, and when having guaranteed in said interlayer 2, to feed in raw material, said inner crucible 3 liquid levels can not be interfered, and then has guaranteed the stable of environment of crystal growth.
Need to prove that the material of said double crucible adopts high temperature resistant clean material, like silit, silicon nitride, zirconium white etc., and said through hole 4 can be multiple shape, like circle, crescent etc.
Adopt the double crucible growing crystal that the utility model provided; Realized lasting crystal pulling; Thereby when not only having solved in the prior art growing crystal effectively, once reinforced can only grow one time crystal and then the low problem of crucible utilization ratio that causes; And improved crystalline production efficiency, reduced production cost.
Various piece adopts the mode of going forward one by one to describe in this specification sheets, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation of spirit that does not break away from the utility model or scope in other embodiments among this paper.Therefore, the utility model will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (7)
1. a double crucible is characterized in that, this double crucible comprises:
Outer crucible and inner crucible, said outer crucible and the shared same crucible of inner crucible bottom surface, and have a determining deviation between the outer wall of the inwall of said outer crucible and said inner crucible;
Be positioned at the interlayer between the outer wall of inwall and inner crucible of said outer crucible;
Be positioned at said inner crucible sidewall bottom and run through the through hole of said inner crucible sidewall.
2. double crucible according to claim 1 is characterized in that, the material of said double crucible is high temperature resistant clean material.
3. double crucible according to claim 1 is characterized in that, the material of said double crucible is a silit.
4. double crucible according to claim 1 is characterized in that, the material of said double crucible is a silicon nitride.
5. double crucible according to claim 1 is characterized in that, the material of said double crucible is a zirconium white.
6. double crucible according to claim 1 is characterized in that, said through hole be shaped as circle.
7. double crucible according to claim 1 is characterized in that, said through hole be shaped as crescent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203507908U CN202246997U (en) | 2011-09-19 | 2011-09-19 | Double-layer crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203507908U CN202246997U (en) | 2011-09-19 | 2011-09-19 | Double-layer crucible |
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| Publication Number | Publication Date |
|---|---|
| CN202246997U true CN202246997U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203507908U Expired - Lifetime CN202246997U (en) | 2011-09-19 | 2011-09-19 | Double-layer crucible |
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| CN (1) | CN202246997U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060908A (en) * | 2013-01-06 | 2013-04-24 | 奥特斯维能源（太仓）有限公司 | Dual-layer ceramic crucible |
| CN103673598A (en) * | 2012-09-04 | 2014-03-26 | 三星电机株式会社 | Refractory structure for preparing nickel powder and preparing method of nickel powder |
| CN104131337A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Crucible with impurity-discharge function and applied in polysilicon purification or ingot casting link, and polysilicon purification or ingot casting method |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN108380257A (en) * | 2018-05-12 | 2018-08-10 | 谢梓扬 | A kind of experiment silica crucible |
| CN109440139A (en) * | 2018-11-30 | 2019-03-08 | 中国工程物理研究院材料研究所 | A kind of double cup type ceramic crucibles and preparation method thereof for molten salt electrolysis of metals refining |
| CN110453290A (en) * | 2018-05-08 | 2019-11-15 | 安徽科瑞思创晶体材料有限责任公司 | A kind of double-walled crucible structure producing large scale TGG, GGG crystal |
| CN111485283A (en) * | 2020-05-15 | 2020-08-04 | 广东先导稀材股份有限公司 | Crystal growth device and method |
| CN116356421A (en) * | 2023-04-12 | 2023-06-30 | 纳狮新材料有限公司 | Single crystal furnace and operation method thereof |
-
2011
- 2011-09-19 CN CN2011203507908U patent/CN202246997U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103673598A (en) * | 2012-09-04 | 2014-03-26 | 三星电机株式会社 | Refractory structure for preparing nickel powder and preparing method of nickel powder |
| CN103060908A (en) * | 2013-01-06 | 2013-04-24 | 奥特斯维能源（太仓）有限公司 | Dual-layer ceramic crucible |
| CN104131337A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Crucible with impurity-discharge function and applied in polysilicon purification or ingot casting link, and polysilicon purification or ingot casting method |
| CN104131337B (en) * | 2014-07-17 | 2016-08-17 | 大连理工大学 | The crucible with exhausting impurity function of application and polycrystalline silicon purifying or casting ingot method in polycrystalline silicon purifying or ingot casting link |
| CN107059130A (en) * | 2017-04-20 | 2017-08-18 | 山东大学 | The Novel crucible of inclusion enclave and the method using crucible growth monocrystalline in a kind of reduction single-crystal silicon carbide |
| CN110453290A (en) * | 2018-05-08 | 2019-11-15 | 安徽科瑞思创晶体材料有限责任公司 | A kind of double-walled crucible structure producing large scale TGG, GGG crystal |
| CN108380257A (en) * | 2018-05-12 | 2018-08-10 | 谢梓扬 | A kind of experiment silica crucible |
| CN109440139A (en) * | 2018-11-30 | 2019-03-08 | 中国工程物理研究院材料研究所 | A kind of double cup type ceramic crucibles and preparation method thereof for molten salt electrolysis of metals refining |
| CN109440139B (en) * | 2018-11-30 | 2021-03-30 | 中国工程物理研究院材料研究所 | Double-cup type ceramic crucible for metal molten salt electrolytic refining and preparation method thereof |
| CN111485283A (en) * | 2020-05-15 | 2020-08-04 | 广东先导稀材股份有限公司 | Crystal growth device and method |
| CN116356421A (en) * | 2023-04-12 | 2023-06-30 | 纳狮新材料有限公司 | Single crystal furnace and operation method thereof |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YUHUI YANGGUANG ENERGY RESOURCES CO., LTD., ZHEJIA Free format text: FORMER OWNER: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. Effective date: 20130218 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee |
Owner name: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. Free format text: FORMER NAME: NEW MATERIAL TECHNOLOGY CO., LTD. ZHEJIANG SI BOEN |
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| CP01 | Change in the name or title of a patent holder |
Address after: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee after: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee before: Zhejiang Sibosi New Material Technology Co.,Ltd. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20130218 Address after: 314117 Yao Town Industrial Park, Jiaxing, Zhejiang, Jiashan Patentee after: RENESOLA ZHEJIANG Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Patentee before: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |