CN200992592Y - Crystal growing system by multi-crucible falling method - Google Patents
Crystal growing system by multi-crucible falling method Download PDFInfo
- Publication number
- CN200992592Y CN200992592Y CN 200620162409 CN200620162409U CN200992592Y CN 200992592 Y CN200992592 Y CN 200992592Y CN 200620162409 CN200620162409 CN 200620162409 CN 200620162409 U CN200620162409 U CN 200620162409U CN 200992592 Y CN200992592 Y CN 200992592Y
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- Prior art keywords
- crucible
- crystal
- guide pipe
- lifting table
- bracing
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- 239000013078 crystal Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 12
- 230000012010 growth Effects 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 230000004323 axial length Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000002245 particle Substances 0.000 description 12
- 239000000155 melt Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005204 segregation Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- NKTZYSOLHFIEMF-UHFFFAOYSA-N dioxido(dioxo)tungsten;lead(2+) Chemical compound [Pb+2].[O-][W]([O-])(=O)=O NKTZYSOLHFIEMF-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a multiple crucible crystal Bridgman growth system and consists of a crystal furnace, a crucible and a crucible supporting system. The crystal furnace comprises a furnace, a hearth and a heating unit. The crucible supporting system comprises a lifting platform, a crucible draft tube bracket on the lifting platform, a crucible draft tube on the bracket, a down-lead device connecting to the lifting platform, a lifting engine connecting to the down-lead device and a power supply. A fastened device is arranged between the draft tube bracket and the draft tube. The crucible is equipped inside the crucible draft tube. The crucible supporting system is a rotary multiple crucible supporting system. The utility model can increase the quality of the growing crystal, attain a high quality doped crystal, a rod-like crystal which is difficult to grow in the prior art with a multiple crucible crystal Bridgman growth technology.
Description
Technical field
The utility model relates to a kind of crystal growth system, particularly a kind of multi-crucible lowering method crystal growth system.
Background technology
Crystal is (as crystal of lead tungstate, Sb in the existing multi-crucible lowering method crystal growth technology
2O
3Doping wolframic acid pincers crystal, Nb
2O
5Lead tungstate-doped crystal) growing system mainly adopts multi-crucible lowering method crystal growth system, growth crucible bracing or strutting arrangement wherein can be under operating device control, drive crucible as requested and move downward the realization crystal growth, by prolonging size of burner hearth, make in the burner hearth and can hold many crystal growths simultaneously in this system in a direction.The accurate rectangle radial temperature field of Xing Chenging is acquisition initial successes such as quadrate crystal of lead tungstate in the growth outward appearance like this.But the crucible bracing or strutting arrangement is merely able to drive growth crucible and moves up and down in this crystal growth system, during crystal growth because the relative transfixion of melt with crystal, only exist natural convection and diffusion in the melt, its major impetus is particle concentration gradient in crystal growth interface place and the melt, thermograde and center of gravity gravitation.This relies on that PARTICLE TRANSPORT FROM speed is slow in the melt that natural convection and diffusion transport the growth particle, efficient is not high, in that growth components is simple, component ion effective segregation coefficient is approaching, growth interface place crystal forms and bath component is close, can be competent at during the less demanding crystal of PARTICLE TRANSPORT FROM in to melt.When growth components complicated, crystal composition and bath component differ bigger at the interface, when component ion effective segregation coefficient has the crystal of significant difference, melt PARTICLE TRANSPORT FROM power scarce capacity can make the growth interface melt can not in time obtain the particle that crystal growth needs, the unwanted particle in interface (as the gritty particle of impurities removal generation) can not in time shift, accumulated concentrations is excessive gradually in the melt of interface, these all can cause in the crystal defective too much, even serious macroscopic defects such as out-phase wrap can appear, or serious results such as dopant ion concentration distribution in crystal is inhomogeneous can appear when the grow doping crystal, cause crystal mass to degenerate.And burner hearth radial temperature field is asymmetric in this growing system, causes in the crucible radial temperature field asymmetric, and crystal growth is had a negative impact, and direct result is a growth cylindrical exterior single crystal difficulty.
Summary of the invention
Technical problem to be solved in the utility model provides a kind of multi-crucible lowering method crystal growth system, can effectively improve the quality of growing crystal, and can grow high-quality doped crystal, can also grow simultaneously obtains the rod-like crystal that existing many crucibles degrowth technology is difficult to acquisition.
The technical scheme that the utility model adopted is: a kind of multi-crucible lowering method crystal growth system comprises: crystal furnace, crucible and bracing or strutting arrangement thereof, and wherein crystal furnace comprises body of heater, burner hearth and heating element; The crucible bracing or strutting arrangement comprises lifting table, be positioned at crucible guide pipe support on the lifting table and the crucible guide pipe on the guide pipe support, what be connected with lifting table draws lower device, with draw lifting motor and the power supply that lower device is connected, wherein be provided with securing gear between guide pipe support and the guide pipe, crucible places in the crucible guide pipe; The crucible bracing or strutting arrangement is rotatable many crucibles bracing or strutting arrangement, the lower end of each guide pipe support is provided with turning axle, turning axle runs through lifting table, the part that lifting table is stretched out in the turning axle lower end is connected with intermeshed gear respectively, one of them turning axle is than other rotation axial length, and the gear on this longer turning axle connects a rotating machine that is fixed on the lifting table by shaft coupling.
Owing to adopt rotatable many crucibles bracing or strutting arrangement, therefore when crystal growth, can regulate rotary shaft rotating speed and direction as required, make the crucible in the crucible guide pipe carry out the speed change rotation according to certain program, rigid crystals that grows in the growth and sidewall of crucible are synchronous with rotating machine under the drive of rotating guide tube mechanical rotation, because inertia effect, liquid melt and crystal and sidewall of crucible produce relative movement, produce with crystal pulling method similarly to the stirring action of melt, make melt produce forced convection, the generation of forced convection can improve greatly that material transports situation in the melt, the crystal interface in making crystal growth solid-liquid interface particle and growing and the exchange of particles of melt are separated kind, crystal in the growth can obtain the particle of needs, the unwanted particle that impurities removal produces can in time be discharged in the melt, and this is to improving perfection of crystal, it is very favourable to improve crystal mass.
In addition, the utility model increases the radial temperature symmetry of crystal growth making the growth melt produce the moving while of forced convection.Though the effect that the rotation of crucible guide pipe improves the radial temperature field symmetry of body of heater is not fairly obvious, but the radial temperature symmetric case of crucible inside can be improved greatly in the every guide pipe of rotation, the reason that obtains this effect is that the temperature variations that experiences in for some time of each face of sustained height of the guide pipe of rotation is identical, it is relatively stable that the insulation shock absorption of the insulating powder between guide pipe inner tubal wall and the growth crucible wall obtains the temperature of crucible, make in the crucible radially that the temperature field can keep symmetry substantially, obtain the circular radial symmetry temperature field similar with the Czochralski grown technology.Because thermograde is the main drive of crystal growth, the solid-liquid interface during symmetric radial temperature field helps growing is in radial symmetry, and crystal is grown the temperature-driven power that obtains in all directions and is similar, and improves the crystal mass of growth greatly.Therefore using can grow bath component relative complex, the oriented segregation coefficient of component ion of the utility model has certain difference or doped crystal, can also grow simultaneously to obtain existing many crucibles degrowth technology and be difficult to the rod-like crystal that obtains.
The beneficial effects of the utility model are:
Adopt the utility model can effectively improve the quality of growing crystal, and can grow high-quality doped crystal, can also grow simultaneously obtains the very difficult rod-like crystal that obtains of existing many crucibles degrowth technology.
Description of drawings
Fig. 1 is the structural representation of an embodiment of the utility model;
Fig. 2 is the utility model crucible and bracing or strutting arrangement enlarged view thereof.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further.
As shown in Figure 1 and Figure 2, a kind of multi-crucible lowering method crystal growth system of the utility model one embodiment comprises: crystal furnace 1, crucible 2 and bracing or strutting arrangement 3 thereof, and wherein crystal furnace 4 comprises body of heater 4, burner hearth 6 and heating element 5; Crucible bracing or strutting arrangement 3 comprises lifting table 301, be positioned at crucible guide pipe support 302 on the lifting table 301 and the crucible guide pipe 303 on the guide pipe support, what be connected with lifting table draws lower device 304, with draw lifting motor 305 and the power supply 306 that lower device 304 is connected, wherein be provided with securing gear 307 between guide pipe support 302 and the guide pipe 303, crucible 2 places in the crucible guide pipe 303; Described crucible bracing or strutting arrangement 3 is rotatable many crucibles bracing or strutting arrangements, the lower end of each guide pipe support 302 is provided with turning axle 308, turning axle 308 runs through lifting table 301, the part that lifting table is stretched out in turning axle 308 lower ends is connected with intermeshed gear 309 respectively, one of them turning axle is than other rotation axial length, and the gear on this longer turning axle connects a rotating machine 311 that is fixed on the lifting table by shaft coupling 310.Heating element can be replaced according to growth different crystal needs.
The rotating speed and the direction of crucible are connected with digital frequency converter 312 between rotating machine 311 described in the present embodiment and the power supply 306 during for effective crystallization control.
But in actual applications, the introduction of rotatable crucible bracing or strutting arrangement also can produce a kind of counter productive in crystal growth system, and the guide pipe of rotation can produce air-flow upwards in burner hearth, and the fast more this effect of rotating speed is just obvious more.The guide pipe of air-flow and rotation all can exert an influence to the temperature field in the burner hearth, and especially radially bigger change can take place the shape of isothermal surface, and the air-flow that produces along guide tube wall can make the heat transfer of guide pipe accelerate.These influences all can be to temperature field distribution generation effect in the crucible, the radial symmetry of solid-liquid interface in the influence growth.These influences also can adopt the thickness of thickening the guide pipe inner thermal insulating layer to reduce the influence of this unfavorable factor along with the speed of rotation of guide pipe reduces reduction rapidly.
Claims (3)
1, a kind of multi-crucible lowering method crystal growth system comprises: crystal furnace, and crucible and bracing or strutting arrangement thereof, wherein crystal furnace comprises body of heater, burner hearth and heating element; The crucible bracing or strutting arrangement comprises lifting table, be positioned at crucible guide pipe support on the lifting table and the crucible guide pipe on the guide pipe support, what be connected with lifting table draws lower device, with draw lifting motor and the power supply that lower device is connected, wherein be provided with securing gear between guide pipe support and the guide pipe, crucible places in the crucible guide pipe; It is characterized in that: described crucible bracing or strutting arrangement is rotatable many crucibles bracing or strutting arrangement, the lower end of each guide pipe support is provided with turning axle, turning axle runs through lifting table, the part that lifting table is stretched out in the turning axle lower end is connected with intermeshed gear respectively, one of them turning axle is than other rotation axial length, and the gear on this longer turning axle connects-be fixed on rotating machine on the lifting table by shaft coupling;
2, multi-crucible lowering method crystal growth system as claimed in claim 1 is characterized in that: described heating element can be replaced according to growth different crystal needs.
3, multi-crucible lowering method crystal growth system as claimed in claim 1 is characterized in that: be connected with digital frequency converter between rotating machine and the power supply in described rotatable many crucibles bracing or strutting arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620162409 CN200992592Y (en) | 2006-12-29 | 2006-12-29 | Crystal growing system by multi-crucible falling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620162409 CN200992592Y (en) | 2006-12-29 | 2006-12-29 | Crystal growing system by multi-crucible falling method |
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| Publication Number | Publication Date |
|---|---|
| CN200992592Y true CN200992592Y (en) | 2007-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200620162409 Expired - Lifetime CN200992592Y (en) | 2006-12-29 | 2006-12-29 | Crystal growing system by multi-crucible falling method |
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| CN (1) | CN200992592Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008086704A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in bridgman-stockbarger method by rotating multiple crucibles |
| CN108660511A (en) * | 2018-05-29 | 2018-10-16 | 中国科学院上海硅酸盐研究所 | A kind of preparation method of high temperature phase barium borate crystal |
| CN111379012A (en) * | 2020-04-24 | 2020-07-07 | 西安交通大学 | Device and method for improving assembly precision of down-leading pipe in single crystal growth furnace |
-
2006
- 2006-12-29 CN CN 200620162409 patent/CN200992592Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008086704A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in bridgman-stockbarger method by rotating multiple crucibles |
| CN101070608B (en) * | 2006-12-29 | 2010-06-23 | 嘉兴学院 | Rotary multi-crucible lowering method crystal growth system |
| CN108660511A (en) * | 2018-05-29 | 2018-10-16 | 中国科学院上海硅酸盐研究所 | A kind of preparation method of high temperature phase barium borate crystal |
| CN111379012A (en) * | 2020-04-24 | 2020-07-07 | 西安交通大学 | Device and method for improving assembly precision of down-leading pipe in single crystal growth furnace |
| CN111379012B (en) * | 2020-04-24 | 2021-02-05 | 西安交通大学 | Device and method for improving assembly precision of down-leading pipe in single crystal growth furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JIAXING COLLEGE Free format text: FORMER OWNER: WAN YOUBAO Effective date: 20071123 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20071123 Address after: No. 56 South Yuexiu Road, Zhejiang, Jiaxing Province, China: 314001 Patentee after: Jiaxing University Address before: Jiaxing City, Zhejiang province tree gempo District 4 Building 604, zip code: 314001 Patentee before: Wan Youbao |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20071219 Effective date of abandoning: 20061229 |