CN208717466U - A kind of single crystal growing furnace sample adding device of side sample-adding - Google Patents
A kind of single crystal growing furnace sample adding device of side sample-adding Download PDFInfo
- Publication number
- CN208717466U CN208717466U CN201820831970.XU CN201820831970U CN208717466U CN 208717466 U CN208717466 U CN 208717466U CN 201820831970 U CN201820831970 U CN 201820831970U CN 208717466 U CN208717466 U CN 208717466U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal growing
- sample
- growing furnace
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The utility model belongs to single crystal growing furnace technical field, and in particular to a kind of single crystal growing furnace sample adding device of side sample-adding.For in the prior art, the problem of mode being loaded from single crystal growing furnace side causes charging rate to reduce and influences monocrystalline quality, the technical solution of the utility model is: including furnace chamber and vertical pulling room, crucible is provided in furnace chamber, guide shell is provided with above crucible, the furnace chamber side is provided with sealed gate, sealed gate is outwardly and inwardly respectively arranged with external sealing flange and internal flange, quartzy guide pipe is connected on the internal flange, the end of quartzy guide pipe is located between the upper edge and guide shell of crucible；Vacuum charging case is connected on external sealing flange.The utility model is suitable for single crystal growing furnace.
Description
Technical field
The utility model belongs to single crystal growing furnace technical field, and in particular to a kind of single crystal growing furnace sample adding device of side sample-adding.
Background technique
Single crystal growing furnace is one kind in inert gas (based on nitrogen, helium) environment, with graphite heater that polysilicon etc. is more
Brilliant material fusing, with the equipment of Grown by CZ Method dislocation-free monocrystalline.It is contained in a crucible after polycrystalline material fusing, and solid
The molten mass volume formed after the melting of the semiconductor materials such as silicon can reduce.Therefore in order to improve the production efficiency, many single crystal growing furnaces are all
Solid material can repeatedly be added makes the molten mass contained in crucible more, so as to once produce more monocrystal rods, with
Improve production efficiency.
Existing single crystal growing furnace sample adding device is mostly to be inserted into sample injector, and one side from single crystal growing furnace Upper vertical before lifting starts
Molten solids raw material constantly supplements solid material by sample injector on one side.Molten mass filling it is enough after, take out sample injector into
Row czochralski process.It is necessary when substantially or being once loaded, and being loaded although this mode can repeatedly supplement solid material
Vacuum drops, thus it is limited to the castering action of production efficiency.
In addition, a kind of device being loaded from side to crucible has also been devised in people, its main feature is that not influencing crucible just
The czochralski process of top is expected to realize and supplements solid material during lifting, greatly improves production efficiency.But it this sets
Meter can protrude into using feed pipe and contract the setting of single crystal growing furnace out, and feed pipe is on the one hand caused to use the structure of casing in this way, so that
Bore is restricted, and reduces the speed of charging；The another aspect feed pipe flexible time needed in place is longer, and the dress that feeds
The air-tightness set is not so good as the ontology of single crystal growing furnace, declines the air-tightness of single crystal growing furnace entirety, and cause admits air into single crystal growing furnace
It is interior, influence the quality of monocrystalline production.
Utility model content
Cause charging rate to reduce for the mode in the prior art, being loaded from single crystal growing furnace side and influence monocrystalline quality
Problem, the utility model provide a kind of single crystal growing furnace sample adding device of side sample-adding, its object is to: it improves from single crystal growing furnace side and adds
The speed of sample, and reduce influence of the sample adding device to single crystal growing furnace air-tightness.
The technical solution adopted in the utility model is as follows:
A kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber and vertical pulling room, are provided with crucible in furnace chamber, on crucible
Side is provided with guide shell, and the furnace chamber side is provided with sealed gate, and sealed gate is outwardly and inwardly respectively arranged with outside
Sealing flange and internal flange are connected with quartzy guide pipe on the internal flange, and the end of quartzy guide pipe is located at crucible
Between upper edge and guide shell；Vacuum charging case is connected on external sealing flange.
After the technical solution, the solid material required supplementation with is added in vacuum charging case in advance, and make vacuum
Vacuum degree and atmosphere in charging box is consistent in furnace chamber.In process of production, when needing to feed, sealed gate is opened,
This
When solid material enter in crucible by quartzy guide pipe.The advantages of this mode is only to need to control sealed gate
It can carry out, it is quick and convenient, it had not only improved efficiency but also had reduced air a possibility that entering furnace chamber during charging.In addition, close
When sealing closing gate, furnace chamber and vacuum charging case are independent from each other two sealing systems, and single crystal pulling behaviour is carried out in furnace chamber
When making, the operation that vacuum charging case can carry out feed supplement, vacuumize and be passed through inert gas, thus the setting can further increase
Production efficiency.
Preferably, the side of crucible is provided with melt chamber, is connected to inside the bottom of melt chamber and crucible, the quartz guiding
The end of pipe is located at the top of melt chamber.After the preferred embodiment, the inside of crucible is divided into progress list using a partition
The main part that crystalline substance lifts and the melt chamber for reinforcing body raw material.Solid material addition melt chamber can be avoided solid material and fall
The czochralski process of monocrystalline will be influenced when lower to the impact of molten mass.
Preferably, sealed gate is electromagnetism gate.The control of electromagnetic brake door is more convenient.
Preferably, the bottom surface of vacuum charging case is set as an inclined-plane, and external sealing flange is located at the bottom on inclined-plane.Using
The preferred embodiment enables solid material to automatically fall into crucible under gravity.
Preferably, the top of vacuum charging case is provided with inert gas tube and vacuum tube.Inert gas tube is to vacuum charging
Inert gas is passed through in case；Vacuum tube can carry out vacuumize process to vacuum charging case.
Preferably, hermatic door is provided at the top of vacuum charging case.It is provided with feed opening at the top of vacuum charging case, feeds
Hermatic door is arranged on mouth can guarantee the air-tightness of vacuum charging case.
It is further preferred that being provided with feeder above hermatic door.Feeder is used for auto feed, can further mention
High efficiency.
It is further preferred that feeder includes shell, hopper is provided in shell, shell and feed hopper bottom are provided with position
The opening being mutually matched, the opening are located above hermatic door, and material plug, the material plug are provided in the opening of the feed hopper bottom
Lower dimension is greater than upper dimension, expects that the top of plug is provided with drawstring.When being fed, hermatic door is first opened, reducing material plug is
It can feed；When stopping charging, the opening of feed hopper bottom can be blocked using drawstring pull-up material plug.The preferred embodiment, which has, to be easy to control
System, easy to operate advantage.
In conclusion by adopting the above-described technical solution, the beneficial effects of the utility model are:
1. needing to control sealed gate can carry out, quick and convenient, during not only having improved efficiency but also having reduced charging
Air enters a possibility that furnace chamber.
2. furnace chamber and vacuum charging case are independent from each other two sealing systems, single crystal pulling operation is carried out in furnace chamber
When, the operation that vacuum charging case can carry out feed supplement, vacuumize and be passed through inert gas, thus the setting can further increase life
Produce efficiency.
3. solid material addition melt chamber, which can be avoided, influences monocrystalline to the impact of molten mass when solid material is fallen
Czochralski process.
4. the control of electromagnetic brake door is more convenient.
5. enabling solid material to automatically fall into crucible under gravity using the preferred embodiment.
6. feeder is used for auto feed, production efficiency can be further increased.
7. fed, hermatic door is first opened, reducing material plug can feed；When stopping charging, drawstring pull-up material is utilized
Plug can block the opening of feed hopper bottom.The preferred embodiment has easily controllable, easy to operate advantage.
Detailed description of the invention
The utility model will illustrate by example and with reference to the appended drawing, in which:
Fig. 1 is the structural schematic diagram of the utility model embodiment 1；
Fig. 2 is the structural schematic diagram of the utility model embodiment 2.
Wherein, 1- vertical pulling room, 2- guide shell, 3- furnace chamber, 4- crucible, 5- heating device, 6- quartz guide pipe, 7- internal law
Orchid, 8- sealed gate, the outside 9- sealing flange, the inclined-plane 10-, 11- vacuum charging case, 12- vacuum tube, 13- inert gas tube,
14- hermatic door, 15- melt chamber, 16- hopper, 17- material plug, 18- shell.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
It elaborates below with reference to Fig. 1 to Fig. 2 to the utility model.
Embodiment 1
A kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber 3 and vertical pulling room 1 are provided with crucible 4, earthenware in furnace chamber 3
4 surrounding of crucible is provided with heating device.Guide shell 2 is provided with above crucible 4,3 side of furnace chamber is provided with sealed gate 8, close
Envelope gate 8 is electromagnetism gate.Sealed gate 8 is outwardly and inwardly respectively arranged with external sealing flange 9 and internal flange 7, institute
State and be connected with quartzy guide pipe 6 on internal flange 7, the end of quartzy guide pipe 6 be located at crucible 4 upper edge and guide shell 2 it
Between.
The side of the crucible 4 is provided with melt chamber 15, is connected to inside the bottom of melt chamber 15 and crucible 4, the quartz
The end of guide pipe 6 is located at the top of melt chamber 15.
Vacuum charging case 11 is connected on external sealing flange 9.The bottom surface of the vacuum charging case 11 is set as one tiltedly
Face 10, external sealing flange 9 are located at the bottom on inclined-plane 10.The top of vacuum charging case 11 is provided with inert gas tube 13 and vacuum
Pipe 12.The top of vacuum charging case 11 is provided with the feed opening for charging, and hermatic door 14 is provided on feed opening.
When the present embodiment works, the solid material required supplementation with is added in vacuum charging case 11 in advance, and make vacuum
Vacuum degree and atmosphere in charging box 11 is consistent in furnace chamber 3.In process of production, when needing to feed, sealing lock is opened
Door 8, solid material enters in crucible 4 by quartzy guide pipe 6 at this time.When stopping charging, sealed gate 8 need to be only closed.
Embodiment 2
On the basis of embodiment 1, the top of the hermatic door 14 is provided with feeder.Feeder includes shell 18, outside
Hopper 16 is provided in shell 18, shell 18 and 16 bottom of hopper are provided with the opening that position is mutually matched, and the opening is located at close
Above closure door 14, material plug 17 is provided in the opening of 16 bottom of hopper, 17 lower dimension of material plug is greater than upper dimension,
The top of material plug 17 is provided with drawstring.
When being fed, hermatic door 14 is first opened, reducing material plug 17 can feed；When stopping charging, drawstring pull-up is utilized
Material plug 17 can block the opening of 16 bottom of hopper.
The specific embodiment of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to the application protection scope therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from technical scheme design, various modifications and improvements can be made, these belong to this
The protection scope of application.
Claims (8)
1. a kind of single crystal growing furnace sample adding device of side sample-adding, including furnace chamber (3) and vertical pulling room (1), furnace chamber are provided with crucible in (3)
(4), guide shell (2) are provided with above crucible (4), it is characterised in that: furnace chamber (3) side is provided with sealed gate (8), close
Envelope gate (8) is outwardly and inwardly respectively arranged with external sealing flange (9) and internal flange (7), on the internal flange (7)
It is connected with quartzy guide pipe (6), the end of quartzy guide pipe (6) is located between the upper edge of crucible (4) and guide shell (2)；It is external
Vacuum charging case (11) are connected on sealing flange (9).
2. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that: the crucible (4)
Side be provided with melt chamber (15), be connected to inside the bottom of melt chamber (15) and crucible (4), the quartzy guide pipe (6)
End is located at the top of melt chamber (15).
3. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that: the sealed gate
It (8) is electromagnetism gate.
4. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that: the vacuum charging
The bottom surface of case (11) is set as an inclined-plane (10), and external sealing flange (9) is located at the bottom on inclined-plane (10).
5. a kind of single crystal growing furnace sample adding device of side sample-adding described in accordance with the claim 1, it is characterised in that: the vacuum charging
The top of case (11) is provided with inert gas tube (13) and vacuum tube (12).
6. the single crystal growing furnace sample adding device being loaded according to a kind of side described in claim 1 or 5, it is characterised in that: the vacuum
Hermatic door (14) are provided at the top of charging box (11).
7. a kind of single crystal growing furnace sample adding device of side sample-adding according to claim 6, it is characterised in that: the hermatic door
(14) feeder is provided with above.
8. a kind of single crystal growing furnace sample adding device of side sample-adding according to claim 7, it is characterised in that: the feeder packet
It includes shell (18), is provided in shell (18) hopper (16), shell (18) and hopper (16) bottom are provided with position and are mutually matched
Opening, the opening is located above hermatic door (14), and material plug (17) is provided in the opening of hopper (16) bottom, described
Material plug (17) lower dimension is greater than upper dimension, and the top of material plug (17) is provided with drawstring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820831970.XU CN208717466U (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820831970.XU CN208717466U (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208717466U true CN208717466U (en) | 2019-04-09 |
Family
ID=65971021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820831970.XU Active CN208717466U (en) | 2018-05-31 | 2018-05-31 | A kind of single crystal growing furnace sample adding device of side sample-adding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208717466U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930843A (en) * | 2021-10-22 | 2022-01-14 | 中国电子科技集团公司第二十六研究所 | Method for growing crystal based on horizontal directional solidification method |
-
2018
- 2018-05-31 CN CN201820831970.XU patent/CN208717466U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930843A (en) * | 2021-10-22 | 2022-01-14 | 中国电子科技集团公司第二十六研究所 | Method for growing crystal based on horizontal directional solidification method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108385159A (en) | A kind of single crystal growing furnace sample adding device of side sample-adding | |
| US8123855B2 (en) | Device and process for growing Ga-doped single silicon crystals suitable for making solar cells | |
| CN102677156B (en) | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace | |
| KR100439132B1 (en) | Single crystal pulling device | |
| CN105603520B (en) | A kind of high speed single-crystal growing apparatus and method | |
| CN107541776A (en) | A kind of growth apparatus and method of large scale gallium oxide single crystal | |
| CN208717466U (en) | A kind of single crystal growing furnace sample adding device of side sample-adding | |
| CN107460538A (en) | It is a kind of to improve the method for throwing monocrystalline silicon crystal forming rate again and the material block for launching barium carbonate | |
| JP2008285351A5 (en) | ||
| US20110174214A1 (en) | Crystal growing apparatus and crystal growing method | |
| CN113584573A (en) | External impurity-absorbing feeding method for single crystal furnace | |
| TW503265B (en) | Single crystal pulling apparatus | |
| CN113073380B (en) | Energy-saving crystal growth single crystal furnace equipment and use method thereof | |
| US6019838A (en) | Crystal growing apparatus with melt-doping facility | |
| JP3953042B2 (en) | Raw material supply apparatus and raw material supply method by Czochralski method | |
| CN102703983A (en) | Method and device for compressing free space in cadmium zinc telluride crystal growing crucible through double sealing sleeves | |
| CN108301038A (en) | A kind of drawing method of pulling silicon single crystal stove and growing single-crystal silicon | |
| JP6471700B2 (en) | Method for melting silicon raw material using recharge device | |
| CN202671709U (en) | Chunk polysilicon feeding device for Czochralski silicon single crystal furnace | |
| CN207567377U (en) | monocrystalline silicon feeding device | |
| JPH08295591A (en) | Doping device | |
| CN106676630A (en) | Silicon wafer lifting device and control method thereof | |
| CN105951180B (en) | Polycrystalline silicon ingot or purifying furnace secondary charging device and polycrystalline cast ingot system | |
| CN217393702U (en) | Amorphous alloy shaped charge liner casting equipment | |
| CN106119968B (en) | Zn(1-x)MnxThe preparation method of Te monocrystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210611 Address after: 614902 No.5, south section of Xingye Road, Jianong Town, Shawan District, Leshan City, Sichuan Province Patentee after: Sichuan JINGDING Technology Co.,Ltd. Address before: 614100 in maker dream factory, No.5, Xingxi Road, Fuxi Town, Emeishan City, Leshan City, Sichuan Province Patentee before: MOUNT EMEI CITY ELEMENTS AND NEW MATERIALS TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |