CN210287583U - Multi-station silicon carbide crystal growing device - Google Patents
Multi-station silicon carbide crystal growing device Download PDFInfo
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- CN210287583U CN210287583U CN201921154199.8U CN201921154199U CN210287583U CN 210287583 U CN210287583 U CN 210287583U CN 201921154199 U CN201921154199 U CN 201921154199U CN 210287583 U CN210287583 U CN 210287583U
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- 239000013078 crystal Substances 0.000 title claims abstract description 44
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 230000007246 mechanism Effects 0.000 claims abstract description 90
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 230000006698 induction Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000002349 favourable effect Effects 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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Abstract
The utility model discloses a multi-station silicon carbide crystal growing device, which comprises at least two growing mechanisms; each growth mechanism comprises a charging bin, a growth cavity communicated with the charging bin, a crucible which can move back and forth along the arrangement direction of the charging bin and the growth cavity and is arranged in the charging bin and the growth cavity, a driving mechanism for driving the crucible to move back and forth and a heating mechanism for heating the growth cavity; the device also comprises a power supply mechanism for simultaneously supplying power to the at least two heating mechanisms, a vacuumizing mechanism for simultaneously vacuumizing the at least two charging bins, and an isolation valve arranged between the vacuumizing mechanism and each charging bin. The utility model relates to a multistation silicon carbide crystal growing device, two at least crystal growth mechanism sharing electrical power generating mechanism and evacuation mechanism not only can realize the accurate accuse temperature of crucible in every growth chamber in order to grow out high-quality crystal, have still practiced thrift crystal growth device's configuration and space utilization, have reduced equipment cost, are favorable to the scale production.
Description
Technical Field
The utility model relates to a multistation carborundum crystal growing apparatus.
Background
A physical vapor transport method (PVT method) is a main technical method for growing silicon carbide single crystals, and the method is characterized in that a silicon carbide polycrystalline raw material is arranged at the bottom of a cylindrical graphite crucible body, the graphite crucible body is covered by a graphite crucible cover to form a closed space, silicon carbide seed crystals are arranged on the lower surface of the graphite crucible cover, the system formed by the graphite crucible body and the graphite crucible cover is heated, so that the silicon carbide polycrystalline raw material in the graphite crucible body is sublimated, a proper temperature gradient is maintained between the silicon carbide polycrystalline raw material and the silicon carbide seed crystals, and the sublimated silicon carbide particles can deposit and grow on the silicon carbide seed crystals, and then the silicon carbide single crystals are obtained.
The existing silicon carbide single crystal growth device is not beneficial to large-scale configuration and production because each growth device is independently provided with a heating power supply and a high vacuum unit, so that the cost is high, the occupied space is large.
The multiple crucibles are heated and grown in the same growth cavity at the same time, so that the energy consumption is high, the temperature of each crucible cannot be independently and accurately controlled, and the crystal growth quality is influenced.
Disclosure of Invention
The utility model aims at providing a multistation silicon carbide crystal growing device has practiced thrift crystal growing device's configuration and space utilization, has reduced equipment cost, is favorable to the scale production.
In order to achieve the above purpose, the utility model adopts the technical scheme that:
a multi-station silicon carbide crystal growing device comprises at least two growing mechanisms;
each growth mechanism comprises a charging bin, a growth cavity communicated with the charging bin, crucibles which can move back and forth along the arrangement direction of the charging bin and the growth cavity and are arranged in the charging bin and the growth cavity, a driving mechanism for driving the crucibles to move back and forth, and a heating mechanism for heating the growth cavity;
the device also comprises a power supply mechanism for supplying power to the at least two heating mechanisms simultaneously, a vacuumizing mechanism for vacuumizing the at least two charging bins simultaneously, and an isolating valve arranged between the vacuumizing mechanism and each charging bin.
Preferably, the device further comprises a lifting mechanism for simultaneously lifting at least two of the heating mechanisms.
More preferably, the lifting mechanism comprises a connecting plate for connecting at least two heating mechanisms and a lifting block for driving the connecting plate to lift.
Preferably, the heating mechanism is an induction heating coil arranged inside or outside the growth chamber in a liftable manner or a resistance heater arranged inside the growth chamber in a liftable manner.
Preferably, the device comprises a frame, and the growth chamber, the loading bin and the driving mechanism are arranged on the frame from top to bottom in sequence.
More preferably, the driving mechanism comprises a lifting rod which can be lifted and arranged in the charging bin and the growth chamber in a penetrating way, and a driving seat which is arranged on the rack and is used for driving the lifting rod.
Still more preferably, the lifting rod is arranged in the driving seat in a manner of rotating around the axis direction of the lifting rod.
Preferably, at least two of the heating means are connected to the power supply means in parallel or in series.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage: the utility model relates to a multistation silicon carbide crystal growing device, two at least crystal growth mechanism sharing electrical power generating mechanism and evacuation mechanism not only can realize the accurate accuse temperature of crucible in every growth chamber in order to grow out high-quality crystal, have still practiced thrift crystal growth device's configuration and space utilization, have reduced equipment cost, are favorable to the scale production.
Drawings
FIG. 1 is a front view of the device of the present invention;
FIG. 2 is a side view of the device of the present invention;
fig. 3 is a top view of the device of the present invention.
Wherein: 1. a charging bin; 2. a growth chamber; 3. a crucible; 4. a heating mechanism; 5. a power supply mechanism; 6. a vacuum pumping mechanism; 7. an isolation valve; 8. a connecting plate; 9. a lifting block; 10. a frame; 11. a lifting rod; 12. a drive seat.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1-3, the multi-station silicon carbide crystal growing device comprises at least two growing mechanisms, and in the embodiment, the growing device comprises two bilaterally symmetrical (in fig. 1, the left and the right are the left and the right). In the present embodiment, the growth apparatus is used for growing a silicon carbide single crystal.
Each growth mechanism comprises a charging bin 1, a growth cavity 2 communicated with the charging bin 1, crucibles 3 which can move back and forth along the arrangement direction of the charging bin 1 and the growth cavity 2 and are arranged in the charging bin 1 and the growth cavity 2, a driving mechanism for driving the crucibles 3 to move back and forth, and a heating mechanism 4 for heating the growth cavity 2. In the present embodiment, the charging bin 1 is provided with an openable bin door for adding raw material to the crucible 3 in the charging bin 1 or taking out crystals from the crucible 3.
In the embodiment, the heating mechanism 4 is an induction heating coil which can be lifted and arranged inside or outside the growth chamber 2; or a resistance heater which can be arranged in the growth cavity 2 in a lifting way. The appropriate heating mechanism 4 is selected according to the needs of the actual process. The temperature and the speed of the heating mechanism 4 can be adjusted according to actual needs.
The multi-station silicon carbide crystal growing device further comprises a frame 10, and the growing cavity 2, the charging bin 1 and the driving mechanism are sequentially arranged on the frame 10. In this embodiment, the growth chamber 2, the loading bin 1 and the driving mechanism are arranged on the frame 10 from top to bottom.
The multi-station silicon carbide crystal growing device further comprises a power supply mechanism 5 used for simultaneously supplying power to the at least two heating mechanisms 4, a vacuumizing mechanism 6 used for simultaneously vacuumizing the at least two charging bins 1, and an isolating valve 7 arranged between the vacuumizing mechanism 6 and each charging bin 1. The two heating mechanisms 4 are connected with the power supply mechanism 5 in parallel or in series.
The utility model relates to a multistation silicon carbide crystal growing device, two at least crystal growth mechanism sharing electrical power generating mechanism 5 and evacuation mechanism 6 not only can realize controlling the temperature in order to grow out high-quality silicon carbide single crystal to the accurate of crucible 3 in every growth chamber 2, have still practiced thrift silicon carbide single crystal growing device's configuration and space utilization, have reduced equipment cost, are favorable to the scale production.
The multi-station silicon carbide crystal growing device further comprises a lifting mechanism, and the lifting mechanism is used for lifting at least two heating mechanisms 4 simultaneously. In the embodiment, the lifting mechanism comprises a connecting plate 8 for connecting at least two heating mechanisms 4 and a lifting block 9 for driving the connecting plate 8 to lift. The lifting block 9 is arranged on the frame 10 in a lifting way and is driven by a cylinder or an oil cylinder. Through the arrangement, at least two heating mechanisms 4 are electrified and heated synchronously under the action of the power supply mechanism 5, and are lifted synchronously under the action of the lifting mechanism to obtain a required temperature field. When the temperature field needs to be finely adjusted, the height of the crucible 3 only needs to be finely adjusted by controlling the driving mechanism corresponding to the crucible 3. When the heating mechanism 4 is a resistance heater, a sealing structure is arranged between the lifting mechanism and each growth cavity 2 so as to ensure the sealing property in the growth cavities 2.
The driving mechanism comprises a lifting rod 11 which is arranged in the charging bin 1 and the growth chamber 2 in a penetrating way and can be lifted, and a driving seat 12 which is arranged on the machine frame 10 and is used for driving the lifting rod 11. The driving seat 12 is connected below the lifting rod 11, the upper end of the lifting rod 11 penetrates through the bottom of the charging bin 1 and penetrates into the charging bin 1, and a sealing structure is arranged between the lifting rod 11 and the charging bin 1 so as to ensure the sealing property in the charging bin 1. In this embodiment, the lifting rod 11 is disposed in the driving seat 12 to rotate around its axis. The driving seat 12 is used for driving the lifting rod 11 to lift and also for driving the lifting rod 11 to rotate around the axis direction of the lifting rod. In the present embodiment, the lifting rod 11 and the crucible 3 extend coaxially and both extend in the vertical direction, and the lifting rod 11 and the lifting block 9 perform lifting movement in the vertical direction.
The following specifically explains the working process of this embodiment:
opening a bin door of a loading bin 1 of a station a, lowering a lifting rod 11 to the bottom of the loading bin 1, loading a crucible 3 to the top of the lifting rod 11, closing the bin door, and jacking the crucible 3 to a process position of a heating mechanism 4 by a driving mechanism; opening a bin door of the charging bin 1 at the station b, lowering the lifting rod 11 to the bottom of the charging bin 1, loading the crucible 3 to the top of the lifting rod 11, closing the bin door, and jacking the crucible 3 to a process position (in the growth chamber 2) of the heating mechanism 4 by the driving mechanism;
starting the vacuumizing mechanism 6, opening the two isolating valves 7, vacuumizing the two charging bins 1 to reach the vacuum degree required by the process, electrifying the two heating mechanisms 4 by the power supply mechanism 5, heating the crucible 3, and finishing the crystal growth process;
after the crystal growth in the crucible 3 is finished, the two driving mechanisms synchronously drive the lifting rod 11 to descend, so that the two crucibles 3 are synchronously descended into the charging bin 1, the power supply mechanism 5 is cut off, the process gas is filled into the charging bin 1 to the normal pressure, the bin door is opened, the crucibles 3 are taken out, and the silicon carbide single crystal growth of two furnaces at one time is finished.
In the process of heating the crucible 3 for crystal growth, the crucible 3 can be driven by the driving mechanism to rotate and move slightly according to the process requirements, which is beneficial to improving the growth quality of the silicon carbide single crystal.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (8)
1. The utility model provides a multistation carborundum crystal growing apparatus which characterized in that: comprises at least two growing mechanisms;
each growth mechanism comprises a charging bin, a growth cavity communicated with the charging bin, crucibles which can move back and forth along the arrangement direction of the charging bin and the growth cavity and are arranged in the charging bin and the growth cavity, a driving mechanism for driving the crucibles to move back and forth, and a heating mechanism for heating the growth cavity;
the device also comprises a power supply mechanism for supplying power to the at least two heating mechanisms simultaneously, a vacuumizing mechanism for vacuumizing the at least two charging bins simultaneously, and an isolating valve arranged between the vacuumizing mechanism and each charging bin.
2. A multi-station silicon carbide crystal growing apparatus according to claim 1, wherein: the device also comprises a lifting mechanism, and the lifting mechanism is used for simultaneously lifting at least two heating mechanisms.
3. A multi-station silicon carbide crystal growing apparatus according to claim 2, wherein: the lifting mechanism comprises a connecting plate used for connecting at least two heating mechanisms and a lifting block used for driving the connecting plate to lift.
4. A multi-station silicon carbide crystal growing apparatus according to claim 1, wherein: the heating mechanism is a liftable induction heating coil arranged inside or outside the growth cavity or a liftable resistance heater arranged inside the growth cavity.
5. A multi-station silicon carbide crystal growing apparatus according to claim 1, wherein: the device comprises a frame, wherein the growth cavity, the charging bin and the driving mechanism are sequentially arranged on the frame from top to bottom.
6. The device of claim 5, wherein the silicon carbide crystal growth apparatus further comprises: the driving mechanism comprises a lifting rod which is arranged in the charging bin and the growth cavity in a penetrating mode and can be lifted, and a driving seat which is arranged on the rack and used for driving the lifting rod.
7. The device of claim 6, wherein: the lifting rod can be arranged in the driving seat in a way of rotating around the axis direction of the lifting rod.
8. A multi-station silicon carbide crystal growing apparatus according to claim 1, wherein: at least two heating mechanisms are connected with the power supply mechanism in parallel or in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921154199.8U CN210287583U (en) | 2019-07-22 | 2019-07-22 | Multi-station silicon carbide crystal growing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921154199.8U CN210287583U (en) | 2019-07-22 | 2019-07-22 | Multi-station silicon carbide crystal growing device |
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| CN210287583U true CN210287583U (en) | 2020-04-10 |
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| CN201921154199.8U Active CN210287583U (en) | 2019-07-22 | 2019-07-22 | Multi-station silicon carbide crystal growing device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112176401A (en) * | 2020-10-16 | 2021-01-05 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Thermal field equipment and method suitable for growth of multi-size crystals |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| RU2811875C1 (en) * | 2021-11-15 | 2024-01-18 | Сучжоу Юкинг Семикондактор Текнолоджи Ко., Лтд. | Method and device for synchronous growth of silicon carbide crystals in multiple crucibles |
-
2019
- 2019-07-22 CN CN201921154199.8U patent/CN210287583U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112176401A (en) * | 2020-10-16 | 2021-01-05 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Thermal field equipment and method suitable for growth of multi-size crystals |
| CN112176401B (en) * | 2020-10-16 | 2022-05-20 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Thermal field equipment and method suitable for growth of multi-size crystals |
| RU2811875C1 (en) * | 2021-11-15 | 2024-01-18 | Сучжоу Юкинг Семикондактор Текнолоджи Ко., Лтд. | Method and device for synchronous growth of silicon carbide crystals in multiple crucibles |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| CN114525587B (en) * | 2022-04-22 | 2022-07-19 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210126 Address after: No.6, new material high tech Industrial Park, Baota District, Yan'an City, Shaanxi Province Patentee after: Yan'an xingteliang Technology Innovation Co.,Ltd. Address before: 8 Donglai Dongli Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: JIANGSU XINGTELIANG TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230105 Address after: No. 8 Donglai Dongli Road, Yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province, 215000 (Xingteliang) Patentee after: JIANGSU XINGTELIANG TECHNOLOGY CO.,LTD. Address before: No.6, new material high tech Industrial Park, Baota District, Yan'an City, Shaanxi Province Patentee before: Yan'an xingteliang Technology Innovation Co.,Ltd. |
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| TR01 | Transfer of patent right |