CN216006088U - Device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals - Google Patents
Device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals Download PDFInfo
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- CN216006088U CN216006088U CN202122351526.2U CN202122351526U CN216006088U CN 216006088 U CN216006088 U CN 216006088U CN 202122351526 U CN202122351526 U CN 202122351526U CN 216006088 U CN216006088 U CN 216006088U
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- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 title abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 48
- 238000000859 sublimation Methods 0.000 claims abstract description 44
- 230000008022 sublimation Effects 0.000 claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract description 17
- 238000007599 discharging Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000109 continuous material Substances 0.000 abstract 1
- 230000000670 limiting effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000004323 axial length Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
The utility model provides a device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals, which comprises a crystal growth area, an atmosphere transmission area, a powder sublimation area and a material changing area which are sequentially arranged from top to bottom, wherein the material changing area comprises a discharging cooling chamber, an auxiliary chamber and a charging chamber which are sequentially arranged side by side, a movable first heat insulation plate is arranged between the auxiliary chamber and the discharging cooling chamber, the movable first heat insulation plate is arranged between the auxiliary chamber and the charging chamber, a lifting support is arranged at the center of the auxiliary chamber and used for lifting a charging crucible to the powder sublimation area or descending the charging crucible to the auxiliary chamber, a material changing area is arranged at the bottom of the sublimation powder area, powder is added through the material changing area, thereby realizing the continuous material changing to carry out the long-time high-quality silicon carbide large crystal growth, avoiding the temperature reduction and furnace shutdown caused by the material changing, and the temperature re-rising again after the material changing is finished, reducing the cost and saving the time, the production efficiency is improved.
Description
Technical Field
The utility model relates to a carborundum crystal growth equipment especially relates to a can supply with the powder in succession, saves the cost, improves production efficiency's device that can refuel in succession and continuously grow high quality carborundum crystal.
Background
At present, the most mainstream method for growing the silicon carbide crystals is to adopt a physical vapor phase method, but a conventional physical vapor phase method growth furnace is in a single operation mode, namely, a material is loaded for growth once, and the material is taken out for the next time after the crystal growth is finished. The biggest disadvantage of this mode is that the size (central axial length) of the ingot to be grown is small and cannot be continuously grown because the powder cannot be continuously supplied. In addition, the single operation mode causes frequent temperature rise and temperature reduction, which not only wastes cost, but also consumes a large amount of time, and influences working efficiency.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the problem that the existing silicon carbide crystal growth furnace is operated once, the defect of material changing in growth can not be realized, the powder can be continuously supplied, the cost is saved, and the device capable of continuously changing the material and continuously growing the high-quality silicon carbide crystal, which improves the production efficiency, can be used for continuously growing the silicon carbide crystal.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the utility model provides a device that can continuous reloading lasts growth high quality silicon carbide crystal, includes the crystal growth district that from top to bottom sets gradually, atmosphere transmission district, powder sublimation district and reloading district, the district of reloading is including the ejection of compact cooling chamber that sets gradually side by side, sublance and charging chamber, be equipped with mobilizable first heat insulating board between sublance and the ejection of compact cooling chamber, be equipped with mobilizable first heat insulating board between sublance and the charging chamber, the center department of sublance is equipped with the lift and holds in the palm for raise the crucible of loading to powder sublimation district or descend to sublance.
The utility model discloses in, the utility model discloses set up the growth zone respectively into crystal growth district, atmosphere transmission district and powder sublimation district, set up the district of reloading in the bottom in powder sublimation district, add the powder through the district of reloading to realize that the continuous reloading carries out long-time high-quality carborundum large crystal growth, avoided blowing out because of the cooling of reloading, heat up again after the reloading finishes, the cost is reduced has practiced thrift the time, has improved production efficiency.
The material changing area comprises discharge cooling chambers arranged side by side, an auxiliary chamber and a charging chamber, a movable first heat insulation plate is arranged between the auxiliary chamber and the discharge cooling chambers, a movable first heat insulation plate is arranged between the auxiliary chamber and the charging chamber, when material is required to be changed, a charging crucible is firstly lowered from a powder sublimation area through a lifting support of the auxiliary chamber, after the charging crucible reaches the auxiliary chamber, the powder sublimation area is isolated from the auxiliary chamber, then the first heat insulation plate between the discharge cooling chamber and the auxiliary chamber is opened, the charging crucible is moved into the discharge cooling chamber, then the first heat insulation plate is closed, and after the charging crucible is cooled, the charging crucible is taken out; opening a first heat insulation plate between the charging chamber and the auxiliary chamber, putting a new charging crucible filled with powder on a lifting tray in the auxiliary chamber, closing the first heat insulation plate between the charging chamber and the auxiliary chamber, lifting the new charging crucible in the auxiliary chamber to a powder sublimation area through the lifting tray, and continuing to grow crystals.
As an optimized proposal of the utility model, the auxiliary chamber, the powder sublimation area and the crystal growth area are respectively provided with an independent air inlet pipeline and an air outlet pipeline.
The independent air inlet pipeline and the independent air outlet pipeline can respectively control the pressure of the auxiliary chamber, the powder sublimation area and the crystal growth area, so that the temperature and the pressure in the device are not influenced.
After the new charging crucible is moved into the auxiliary chamber, the pressure in the auxiliary chamber is adjusted, so that when the pressure in the auxiliary chamber is close to the pressure in the powder sublimation area, the powder sublimation area and the auxiliary chamber are opened, and the charging crucible is lifted.
As an optimized proposal of the utility model, the auxiliary chamber is positioned under the sublimation area of the powder, and a movable second heat insulation board is arranged between the auxiliary chamber and the sublimation area of the powder.
Used for isolating the auxiliary chamber from the powder sublimation area and preventing the temperature of the powder sublimation area from dropping sharply.
As an optimized proposal of the utility model, the atmosphere transmission area is communicated with the crystal growth area and the powder sublimation area.
The powder material reaches the crystal growth area through the atmosphere transmission area after being sublimated.
As an optimized proposal of the utility model, the diameter of the atmosphere transmission area is smaller than that of the crystal growth area, and the diameter of the crystal growth area is smaller than that of the powder sublimation area.
As an optimized proposal of the utility model, the center of the crystal growth area is provided with a lifting and rotating device used for lifting and rotating the seed crystal, and the lifting and rotating device comprises a lifting rod and a rotating support.
As an optimized proposal of the utility model, a filter screen is arranged in the atmosphere transmission area.
As an optimized scheme of the utility model, the powder sublimation district with atmosphere transmission distinguishes the outer twin coil induction heating device that is equipped with frequency respectively.
The independent same-frequency double-coil induction heating device can ensure that the temperature in the powder sublimation area is not influenced when the charging crucible rises and falls.
As an optimized proposal of the utility model, the crystal growth area, the atmosphere transmission area, the powder sublimation area and the material changing area are positioned on the same axis.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses set up the growth zone into crystal growth district respectively, atmosphere transmission district and powder sublimation district have set up the district of reloading in the bottom in powder sublimation district, add the powder through the district of reloading to realize that the continuous reloading carries out long-time high-quality carborundum large crystal growth, avoided blowing out because of the cooling of reloading, the reloading is heated up again after finishing, and the cost is reduced has practiced thrift the time, has improved production efficiency.
Drawings
Fig. 1 is a schematic diagram of the present invention.
In the figure, 1. a crystal growth region; 2. an atmosphere transfer zone; 3. a powder sublimation area; 4. a discharge cooling chamber; 5. a charging chamber; 6. a sub-chamber; 7. an air intake duct; 8. an exhaust duct; 9. lifting support; 10. a first heat insulation plate; 11. a second heat insulation plate; 12. a lifting rod; 13. rotating the support; 14. seed crystal; 15. a same-frequency double-coil induction heating device; 16. a charging crucible; 17. and (4) a filter screen.
Detailed Description
For a further understanding of the present invention, reference will be made to the following detailed description taken in conjunction with the accompanying drawings and examples.
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. The utility model discloses in words such as first, second, be for the description the utility model discloses a technical scheme is convenient and set up, and does not have specific limiting action, is general finger, right the technical scheme of the utility model does not constitute limiting action. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art. The technical solutions in the same embodiment and between the technical solutions in different embodiments can be arranged and combined to form a new technical solution without contradiction or conflict, which is all within the scope of the present invention.
Examples
Referring to fig. 1, the embodiment provides a device capable of continuously changing material to continuously grow high-quality silicon carbide crystals, which comprises a crystal growth area 1, an atmosphere transmission area 2, a powder sublimation area 3 and a material changing area which are sequentially arranged from top to bottom;
the atmosphere transmission area 2 is communicated with the crystal growth area 1 and the powder sublimation area 3, the diameter of the atmosphere transmission area 2 is smaller than that of the crystal growth area 1, the diameter of the crystal growth area 1 is smaller than that of the powder sublimation area 3, and a filter screen 17 is arranged in the atmosphere transmission area 2;
the center of the crystal growth area 1 is provided with a lifting and rotating device for lifting and rotating the seed crystal 14, and the lifting and rotating device comprises a lifting rod 12 and a rotating support 13;
the powder sublimation area 3 and the atmosphere transmission area 2 are respectively provided with a same-frequency double-coil induction heating device 15;
the material changing area comprises a discharging cooling chamber 4, an auxiliary chamber 6 and a charging chamber 5 which are sequentially arranged side by side, a movable first heat insulation plate 10 is arranged between the auxiliary chamber 6 and the discharging cooling chamber 4, the movable first heat insulation plate 10 is arranged between the auxiliary chamber 6 and the charging chamber 5, the auxiliary chamber 6 is positioned under the powder sublimation area 3, and a movable second heat insulation plate 11 is arranged between the auxiliary chamber 6 and the powder sublimation area 3;
the auxiliary chamber 6, the powder sublimation area 3 and the crystal growth area 1 are respectively provided with an independent air inlet pipeline 7 and an independent air outlet pipeline 8 which are respectively connected with different vacuum systems;
when the device is used, the lifting support of the auxiliary chamber is lowered, and the powder sublimation area and the auxiliary chamber are isolated after the charging crucible reaches the auxiliary chamber. Then opening a first heat insulation plate between the discharging cooling chamber and the auxiliary chamber, moving the charging crucible into the discharging cooling chamber, and closing the first heat insulation plate;
then, the first heat-insulating plate between the charging chamber and the sub-chamber is opened, a new charging crucible is placed on the lifting tray in the sub-chamber, and the first heat-insulating plate between the charging chamber and the sub-chamber is closed.
And when the pressure of the auxiliary chamber is pumped to a proper range, opening the second heat insulation plate, and sending the charging crucible into the powder sublimation area for subsequent sublimation and crystal growth.
The present invention and its embodiments have been described above schematically, and the description is not limited thereto, and what is shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. Therefore, if the person skilled in the art receives the teaching of the present invention, without departing from the inventive spirit of the present invention, the person skilled in the art should also design the similar structural modes and embodiments without creativity to the technical solution, and all shall fall within the protection scope of the present invention.
Claims (9)
1. The utility model provides a device that can continuous reloading carries out continuous growth high quality silicon carbide crystal which characterized in that, is including the crystal growth district that from top to bottom sets gradually, atmosphere transmission district, powder sublimation district and reloading district, the district of reloading is including the ejection of compact cooling chamber that sets gradually side by side, auxiliary chamber and charging chamber, be equipped with mobilizable first heat insulating board between auxiliary chamber and the ejection of compact cooling chamber, be equipped with mobilizable first heat insulating board between auxiliary chamber and the charging chamber.
2. The apparatus of claim 1 wherein the sub-chamber, the powder sublimation zone and the crystal growth zone are provided with separate inlet and outlet conduits, respectively.
3. The apparatus of claim 1, wherein the sub-chamber is located directly below the sublimation zone, and a second movable thermal shield is disposed between the sub-chamber and the sublimation zone.
4. The apparatus of claim 1 wherein the atmosphere transfer region is in communication with the crystal growth region and the frit sublimation region.
5. The apparatus of claim 1 wherein the atmosphere transfer zone has a smaller diameter than the crystal growth zone and the crystal growth zone has a smaller diameter than the powder sublimation zone.
6. The apparatus for continuous growth of high quality silicon carbide crystals by continuous refuelling according to claim 1 wherein the center of the crystal growth zone is provided with a lifting and rotating means for lifting and rotating the seed crystal, the lifting and rotating means comprising a lifting rod and a rotating holder.
7. An apparatus for continuously recharging and growing high quality silicon carbide crystals as claimed in claim 1 wherein a screen is provided in said atmosphere transfer zone.
8. The apparatus of claim 1, wherein the powder sublimation zone and the atmosphere transfer zone are separately provided with a same-frequency double-coil induction heating device.
9. An apparatus for continuously recharging and growing high quality silicon carbide crystals according to any one of claims 1 to 8 wherein said crystal growth zone, said atmosphere transfer zone, said powder sublimation zone and said recharging zone are co-axial.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122351526.2U CN216006088U (en) | 2021-09-27 | 2021-09-27 | Device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122351526.2U CN216006088U (en) | 2021-09-27 | 2021-09-27 | Device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals |
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| CN216006088U true CN216006088U (en) | 2022-03-11 |
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| CN202122351526.2U Active CN216006088U (en) | 2021-09-27 | 2021-09-27 | Device capable of continuously changing materials to continuously grow high-quality silicon carbide crystals |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114836834A (en) * | 2022-07-04 | 2022-08-02 | 浙江大学杭州国际科创中心 | Device and method for continuously growing single crystal silicon carbide by PVT (physical vapor transport) method |
| CN117646278A (en) * | 2024-01-30 | 2024-03-05 | 苏州优晶半导体科技股份有限公司 | Growth device and growth method of silicon carbide single crystal with bottom supplied and discharged |
-
2021
- 2021-09-27 CN CN202122351526.2U patent/CN216006088U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114836834A (en) * | 2022-07-04 | 2022-08-02 | 浙江大学杭州国际科创中心 | Device and method for continuously growing single crystal silicon carbide by PVT (physical vapor transport) method |
| CN114836834B (en) * | 2022-07-04 | 2022-11-22 | 浙江大学杭州国际科创中心 | Device and method for continuously growing single crystal silicon carbide by PVT (physical vapor transport) method |
| CN117646278A (en) * | 2024-01-30 | 2024-03-05 | 苏州优晶半导体科技股份有限公司 | Growth device and growth method of silicon carbide single crystal with bottom supplied and discharged |
| CN117646278B (en) * | 2024-01-30 | 2024-06-07 | 苏州优晶半导体科技股份有限公司 | Growth device and growth method of silicon carbide single crystal with bottom supplied and discharged |
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