CN202202012U - Single crystal furnace having structure of double auxiliary furnace chambers - Google Patents
Single crystal furnace having structure of double auxiliary furnace chambers Download PDFInfo
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- CN202202012U CN202202012U CN2011202338669U CN201120233866U CN202202012U CN 202202012 U CN202202012 U CN 202202012U CN 2011202338669 U CN2011202338669 U CN 2011202338669U CN 201120233866 U CN201120233866 U CN 201120233866U CN 202202012 U CN202202012 U CN 202202012U
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- secondary furnace
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Abstract
The utility model relates to direct-pulling silicon single crystal furnace equipment, aiming at providing a single crystal furnace having a structure of double auxiliary furnace chambers. The single crystal furnace is provided with a main furnace chamber, an auxiliary furnace chamber is arranged on the main furnace chamber, the single crystal furnace is further provided with an extra auxiliary furnace chamber, both of the two auxiliary furnace chambers comprise furnace cylinders, crystal lift mechanisms, horizontal adjustment mechanisms, auxiliary furnace chamber rotating mechanisms and hydraulic cylinders, the hydraulic cylinders are used for controlling the auxiliary furnace chambers to lift, the auxiliary furnace chamber rotating mechanisms are movably arranged on support columns through connecting pieces, an auxiliary furnace chamber gate valve is arranged at the lower end of each of the auxiliary furnace chambers, a moving valve plate is arranged in the auxiliary furnace chamber gate valve, an isolation valve seat is arranged at the upper end of the main furnace chamber, a moving main furnace chamber isolation valve plate is arranged in the isolation valve seat, and the upper sides of the isolation valve seat are matched with the two auxiliary furnace chamber gate valves. A next crystal bar can be pulled during cooling crystal bar by means of alternate use of the two furnace cylinders, so that the production period is shortened, the production efficiency is greatly improved, and the cost is effectively reduced.
Description
Technical field
The utility model relates to the czochralski silicon monocrystal furnace apparatus, particularly a kind of single crystal growing furnace that possesses two-pack furnace chamber structure.
Background technology
Traditional straight pulling silicon single crystal furnace is furnished with a secondary furnace chamber in its upper of furnace body, is used for after crystal lifts out melt, rising to the inner slowly cooling of secondary furnace chamber.The monocrystalline that growth diameter is 8 inches needs 6～8 hours cooling time usually, but in this process of cooling, can not carry out the drawing of next root monocrystalline.This directly causes the body of heater effective run time to shorten, and during this period, also is necessary for to keep furnace body temperature lasting EPS is provided, and causes serious waste.Since the crystal for straight drawing monocrystal growth stove comes into operation, never develop effective equipment to reduce because crystal cools off the influence of right equipment operation efficient, monocrystal stove production efficiency can't further improve, and has limited manufacturing enterprise and has further reduced cost.
The utility model content
The technical problem that the utility model will solve is, overcomes deficiency of the prior art, and a kind of single crystal growing furnace that possesses two-pack furnace chamber structure is provided.
Be the technical solution problem, the scheme that the utility model provides is:
The single crystal growing furnace that possesses two-pack furnace chamber structure is provided, and this single crystal growing furnace has a main furnace chamber, and main furnace chamber top is equipped with a secondary furnace chamber; This single crystal growing furnace is secondary furnace chamber of additional configuration also; Two secondary furnace chambers all possess stove tube, crystal lifting mechanism, horizontal adjusting mechanism, secondary furnace chamber rotating mechanism and control the hydro-cylinder that secondary furnace chamber goes up and down, and secondary furnace chamber rotating mechanism all is movably installed on the pillar stiffener through web member; The lower end of each secondary furnace chamber is provided with a secondary furnace chamber gate valve, in the secondary furnace chamber gate valve active valve plate is set; The upper end of said main furnace chamber is provided with one and isolates valve seat, isolates valve seat set inside active master furnace chamber and isolates valve plate, isolates valve seat upside and two secondary furnace chamber gate valves and matees each other.
In the utility model, the movable valve plate of secondary furnace chamber gate valve set inside adopts plug in construction, and the active master furnace chamber isolation valve plate of isolating the valve seat set inside can adopt the turnover plate type structure, satisfies sealing with this and ensures, and reserve the requirement of rising passway for crystal.
As a kind of improvement, about said two secondary furnace chamber rotating mechanisms are installed on respectively on two pillar stiffeners, or be installed on the same pillar stiffener.
As a kind of improvement, said pillar stiffener is fixed in the outside of main furnace chamber.
Monocrystalline silicon production method based on aforementioned single crystal growing furnace may further comprise the steps:
(1) uses I number secondary furnace chamber to cooperate earlier and accomplish first single crystal growth process, then crystal is risen in the stove tube with main furnace chamber; Close main furnace chamber and isolate valve plate and I number secondary furnace chamber valve plate, and in isolating valve seat, charge into argon gas; After reaching barometric point, I number secondary furnace chamber risen and rotate to main furnace chamber next door, crystal is accomplished cooling at I number secondary furnace chamber;
(2) after I number secondary furnace chamber rises and rotate to by the main furnace chamber, rotate to main furnace chamber top with being about to II number secondary furnace chamber, the airtight connection realized with the isolation valve seat in the back that descends;
(3) confirm that main furnace chamber isolation valve plate is in closing condition; II number secondary furnace chamber valve plate is in open mode; II number secondary furnace chamber is evacuated down to 100Torr, in II number secondary furnace chamber, charges into argon gas again and reach 400Torr, repeat twice of vacuum and applying argon gas process again; Then II number secondary furnace chamber internal pressure adjusted to identically, opened main furnace chamber again and isolate valve plate, begin next root single crystal growth process with main furnace chamber pressure;
(4) repeat and accomplish and step (1) to (3) identical operations step continuously, can realize that I number secondary furnace chamber and II number secondary furnace chamber are alternately rotated, the process of many monocrystalline of the continual continuous growth of main furnace chamber.
The beneficial effect of the utility model is:
Be configuration two-pack furnace chamber on the main furnace body in the utility model, crystal pulling through being used alternatingly of two stove tubes, can be carried out the drawing of next root crystal bar at the crystal bar refrigerative after accomplishing simultaneously, has shortened the production cycle, increases substantially production efficiency.Through test, behind employing the utility model, in 3～5 monocrystalline processes of single stove continuous growth, can reduce about 12～25 hours waiting time.The annual effective run time that therefore accumulates of separate unit single crystal growing furnace surpasses 500 hours according to statistics, and therefore can enhance productivity at least reaches more than 8%, has increased substantially the service efficiency of thermal field, crucible etc., effectively reduces cost.
Description of drawings
Fig. 1 is the synoptic diagram that possesses the single crystal growing furnace of two-pack furnace chamber structure;
Fig. 2 is the local right pseudosection at A place among Fig. 1.
Reference numeral: 1 is II crystal lifting mechanism, and 2 is the II horizontal adjusting mechanism, and 3 is II stove tube, and 4 is II number secondary furnace chamber gate valve; 5 is II number secondary furnace chamber valve plate, and 6 is I crystal lifting mechanism, and 7 is the I horizontal adjusting mechanism, and 8 is I stove tube; 9 is II number secondary furnace chamber rotating mechanism, and 10 is the II pillar stiffener, and 11 is the II hydro-cylinder, and 12 is I number secondary furnace chamber gate valve; 13 is I number secondary furnace chamber valve plate, and 14 isolate valve seat, and 15 main furnace chambers are isolated valve plate, and 16 is I number secondary furnace chamber rotating mechanism; 17 is the I pillar stiffener, and 18 is the I hydro-cylinder, and 19 is main furnace chamber.
Embodiment
Below in conjunction with accompanying drawing the embodiment of the utility model is carried out detailed presentations.
The single crystal growing furnace that possesses two-pack furnace chamber structure has a main furnace chamber 19, and the top of main furnace chamber 19 is equipped with a secondary furnace chamber, and this single crystal growing furnace has also disposed second secondary furnace chamber extraly.Two secondary furnace chambers possess hydro-cylinder 11 and 18, secondary furnace chamber rotating mechanism 9 and 16, secondary furnace chamber gate valve 4 and 12, the secondary furnace chamber valve plate 5 and 13 of stove tube 3 and 8, crystal lifting mechanism 1 and 6, horizontal adjusting mechanism 2 and 7, the secondary furnace chamber up-down of control respectively; Two secondary furnace chamber gate valves 4 and 12 are located at the bottom of stove tube 3 and 8 respectively, and secondary furnace chamber gate valve 4 and 12 inside are provided with the secondary furnace chamber valve plate 5 and 13 of active respectively; Two secondary furnace chamber rotating mechanisms 9 and 16 are movably installed in respectively on pillar stiffener 10 and 17 through web member; The upper end of said main furnace chamber 19 is provided with one and isolates valve seat 14, isolates the set inside active master furnace chamber of valve seat 14 and isolates valve plate 15, isolates valve seat 14 upsides and matees each other with I number secondary furnace chamber gate valve 12 and II number secondary furnace chamber gate valve 4.
As possibility, two secondary furnace chamber rotating mechanisms 9 and 16 also can be installed on the same pillar stiffener 10, and pillar stiffener 10 can be arranged on the outside of main furnace chamber 19.
Based on the said working method that possesses the single crystal growing furnace of two-pack furnace chamber structure, may further comprise the steps:
(1) uses I number secondary furnace chamber to cooperate earlier and accomplish first single crystal growth process, then crystal is risen in the I stove tube 8 with main furnace chamber 19; Close main furnace chamber and isolate valve plate 15 and I number secondary furnace chamber valve plate 13, and in isolating valve seat 14, charge into argon gas; After reaching barometric point, rise I hydro-cylinder 18, separate and isolate valve seat 14 and I number secondary furnace chamber gate valve 12; Through I number secondary furnace chamber rotating mechanism 16 I number secondary furnace chamber rotated to main furnace chamber 19 next doors, crystal is accomplished cooling in I stove tube 8; Cool off after 6 to 8 hours, in I stove tube 8, charge into argon gas, reach and open I number secondary furnace chamber valve plate 13 behind the barometric point and take off monocrystalline;
(2) after I number secondary furnace chamber rotates to main furnace chamber 19 next doors, rotate to main furnace chamber 19 tops, after the decline II number secondary furnace chamber gate valve 4 realized airtight connections with isolation valve seat 14 with being about to II number secondary furnace chamber;
(3) confirm that main furnace chamber isolation valve plate 15 is in closing condition; II number secondary furnace chamber valve plate 5 is in open mode; II number secondary furnace chamber is evacuated down to 100Torr, in II number secondary furnace chamber, charges into argon gas again and reach 400Torr, repeat twice of vacuum and applying argon gas process again; Then II number secondary furnace chamber internal pressure adjusted to identically, opened main furnace chamber again and isolate valve plate 15, begin next root single crystal growth process with main furnace chamber 19 pressure;
(4) use II number secondary furnace chamber to cooperate and accomplish second single crystal growth process, then crystal is risen in the II stove tube 3 with main furnace chamber 19; Close main furnace chamber and isolate valve plate 15 and II number secondary furnace chamber valve plate 5, and in isolating valve seat 14, charge into argon gas; After reaching barometric point, rise II hydro-cylinder 11, separate and isolate valve seat 14 and II number secondary furnace chamber gate valve 4; Through II number secondary furnace chamber rotating mechanism 9 II number secondary furnace chamber rotated to main furnace chamber 19 next doors, crystal is accomplished cooling in II stove tube 3; Cool off after 6 to 8 hours, in II stove tube 3, charge into argon gas, reach and open II number secondary furnace chamber valve plate 5 behind the barometric point and take off monocrystalline;
(5) after II number secondary furnace chamber rotates to main furnace chamber 19 next doors, rotate to main furnace chamber 19 tops, after the decline I number secondary furnace chamber gate valve 12 realized airtight connections with isolation valve seat 14 with being about to I number secondary furnace chamber;
(6) confirm that main furnace chamber isolation valve plate 15 is in closing condition; I number secondary furnace chamber valve plate 13 is in the state of beating; I number secondary furnace chamber is evacuated down to 100Torr, in I number secondary furnace chamber, charges into argon gas again and reach 400Torr, repeat twice of vacuum and applying argon gas process again; Then I number secondary furnace chamber internal pressure adjusted to identically, opened main furnace chamber again and isolate valve plate 15, begin next root single crystal growth process with main furnace chamber 19 pressure;
(7) repeat and accomplish the aforesaid operations step continuously, can realize that I number secondary furnace chamber and II number secondary furnace chamber are alternately rotated, the process of many monocrystalline of the continual continuous growth of main furnace chamber.
Claims (3)
1. the single crystal growing furnace that possesses two-pack furnace chamber structure, this single crystal growing furnace have a main furnace chamber, and main furnace chamber top is equipped with a secondary furnace chamber; It is characterized in that; This single crystal growing furnace also disposes a secondary furnace chamber in addition; Two secondary furnace chambers all possess stove tube, crystal lifting mechanism, horizontal adjusting mechanism, secondary furnace chamber rotating mechanism and control the hydro-cylinder that secondary furnace chamber goes up and down, and each secondary furnace chamber rotating mechanism all is movably installed on the pillar stiffener through web member; The lower end of each secondary furnace chamber is provided with a secondary furnace chamber gate valve, in the secondary furnace chamber gate valve active valve plate is set; The upper end of said main furnace chamber is provided with one and isolates valve seat, isolates valve seat set inside active master furnace chamber and isolates valve plate, isolates valve seat upside and two secondary furnace chamber gate valves and matees each other.
2. the single crystal growing furnace that possesses two-pack furnace chamber structure according to claim 1 is characterized in that, about said two secondary furnace chamber rotating mechanisms are installed on respectively on two pillar stiffeners, or is installed on the same pillar stiffener.
3. the single crystal growing furnace that possesses two-pack furnace chamber structure according to claim 1 is characterized in that said pillar stiffener is positioned at the outside of main furnace chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202338669U CN202202012U (en) | 2011-07-04 | 2011-07-04 | Single crystal furnace having structure of double auxiliary furnace chambers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202338669U CN202202012U (en) | 2011-07-04 | 2011-07-04 | Single crystal furnace having structure of double auxiliary furnace chambers |
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| Publication Number | Publication Date |
|---|---|
| CN202202012U true CN202202012U (en) | 2012-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011202338669U Withdrawn - After Issue CN202202012U (en) | 2011-07-04 | 2011-07-04 | Single crystal furnace having structure of double auxiliary furnace chambers |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312283A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon |
| CN103898598A (en) * | 2012-12-29 | 2014-07-02 | 富泰华精密电子（郑州）有限公司 | Crystal growing device |
| CN106987897A (en) * | 2017-04-28 | 2017-07-28 | 西安创联新能源设备有限公司 | A kind of improved single crystal furnace structure and its application |
| CN107151819A (en) * | 2017-06-08 | 2017-09-12 | 浙江晶盛机电股份有限公司 | For monocrystalline silicon growing furnace furnace chamber retaining mechanism |
| CN107354504A (en) * | 2017-08-15 | 2017-11-17 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace liftable pair furnace chamber bellows extension mechanism |
| CN109989106A (en) * | 2017-12-31 | 2019-07-09 | 江苏拜尔特光电设备有限公司 | Dual rotary pulling apparatus and its switching method |
-
2011
- 2011-07-04 CN CN2011202338669U patent/CN202202012U/en not_active Withdrawn - After Issue
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312283A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon |
| CN102312283B (en) * | 2011-07-04 | 2013-11-13 | 浙江晶盛机电股份有限公司 | Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon |
| CN103898598A (en) * | 2012-12-29 | 2014-07-02 | 富泰华精密电子（郑州）有限公司 | Crystal growing device |
| CN103898598B (en) * | 2012-12-29 | 2016-08-10 | 富泰华精密电子（郑州）有限公司 | Crystal growing apparatus |
| CN106987897A (en) * | 2017-04-28 | 2017-07-28 | 西安创联新能源设备有限公司 | A kind of improved single crystal furnace structure and its application |
| CN107151819A (en) * | 2017-06-08 | 2017-09-12 | 浙江晶盛机电股份有限公司 | For monocrystalline silicon growing furnace furnace chamber retaining mechanism |
| CN107151819B (en) * | 2017-06-08 | 2023-06-23 | 浙江晶盛机电股份有限公司 | Furnace chamber locking mechanism for monocrystalline silicon growth furnace |
| CN107354504A (en) * | 2017-08-15 | 2017-11-17 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace liftable pair furnace chamber bellows extension mechanism |
| CN107354504B (en) * | 2017-08-15 | 2023-07-28 | 浙江晶盛机电股份有限公司 | Lifting auxiliary furnace chamber corrugated pipe extension mechanism of single crystal furnace |
| CN109989106A (en) * | 2017-12-31 | 2019-07-09 | 江苏拜尔特光电设备有限公司 | Dual rotary pulling apparatus and its switching method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120425 Effective date of abandoning: 20131113 |
|
| RGAV | Abandon patent right to avoid regrant |