CN109023525A - A kind of moveable sapphire crystal growing furnace of pedestal - Google Patents
A kind of moveable sapphire crystal growing furnace of pedestal Download PDFInfo
- Publication number
- CN109023525A CN109023525A CN201811190245.XA CN201811190245A CN109023525A CN 109023525 A CN109023525 A CN 109023525A CN 201811190245 A CN201811190245 A CN 201811190245A CN 109023525 A CN109023525 A CN 109023525A
- Authority
- CN
- China
- Prior art keywords
- crucible
- support base
- moveable
- pedestal
- screw mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 21
- 239000010980 sapphire Substances 0.000 title claims abstract description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 230000001360 synchronised effect Effects 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 8
- -1 furnace body (1) Chemical compound 0.000 claims description 3
- 238000011534 incubation Methods 0.000 claims description 3
- 230000033001 locomotion Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
Abstract
The invention discloses a kind of moveable sapphire crystal growing furnaces of pedestal comprising furnace body, furnace body internal upper part are divided into main chamber, and lower part is divided into mobile cavity；Crucible lift device is equipped in mobile cavity, crucible lift device is made of support base, screw mechanism and synchronous motor, support base is horizontally installed between screw mechanism, and synchronous motor is set to the bottom of mobile cavity, and is connected with screw mechanism and support base is driven to move up and down；It is fixedly welded with support column in support base, crucible pallet is fixedly mounted above support column, crucible is set on crucible pallet；Bottom heater is provided in support base below crucible pallet, bottom heater lower end is equipped with bottom insulation board.The present invention rotates to control the lifting of crucible lift device using synchronous machine drives screw mechanism, crucible is not only realized to move up and down in furnace, and the lifting position of crucible and speed are regulatable, the efficiency and the security performance during loading and unloading for more efficiently improving loading and unloading.
Description
Technical field:
The present invention relates to sapphire crystal growth apparatus field, in particular to a kind of moveable sapphire crystal of pedestal is raw
Long furnace.
Background technique:
Sapphire crystal growing furnace is crystal pro cessing manufacturing equipment important in LED industry chain, which will by high temperature
Aluminum oxide melting sources in crucible, novel crystalline form of laying equal stress on is at monocrystal.Therefore, the overall structure of furnace body determines crucible
Charging and discharge way.Use about segmentation wolfram wire mesh heater on sapphire single-crystal furnace in the prior art, so that
Crucible supporting mode is changed, so make crucible loading and unloading and etc. can be completed in lower portion of furnace body, as CN202945360U public affairs
A kind of hydraulic elevation type crucible supporting system for sapphire single-crystal furnace opened is in sapphire single-crystal furnace using hydraulic
Hoistable platform, and furnace body lower flange, lower thermal field and crucible are all assembled on hydraulic elevating platform, lower heater is heat-insulated under
Layer is assemblied in furnace body lower flange and water cooled copper plate, realizes crucible and lower thermal field component synchronization elevating movement, in lifting process not
Structural compromise can be constituted to lower thermal field component, and realize crucible from lower portion of furnace body input and output material, substantially increase loading and unloading
Efficiency, and improve the security performance during loading and unloading.It can in consideration of it, designing a kind of pedestal on the basis of existing technology
Mobile sapphire crystal growing furnace.
Summary of the invention:
The purpose of the present invention is intended to provide a kind of moveable sapphire crystal growing furnace of pedestal, realizes that crucible is warm in furnace
While up and down motion in, the lifting position and speed controllable adjustable of crucible more efficiently improve the efficiency of loading and unloading
With the security performance during loading and unloading.
To achieve the above object, the present invention provides a kind of moveable sapphire crystal growing furnace of pedestal, including furnace body, furnace
Internal top is divided into main chamber, and lower part is divided into mobile cavity；Crucible lift device is equipped in the mobile cavity, crucible lift device is by propping up
It supports pedestal, screw mechanism and synchronous motor to constitute, support base is horizontally installed between screw mechanism, and synchronous motor is set to shifting
The bottom of dynamic chamber, and be connected with screw mechanism and support base is driven to move up and down；It is fixedly welded in the support base
Support column, support column top are fixedly mounted crucible pallet, crucible are arranged on crucible pallet；In crucible pallet in the support base
Lower section is provided with bottom heater, and bottom heater lower end is equipped with bottom insulation board.
Further, the main chamber of above-mentioned furnace body is incubation cavity, and bell is equipped in main chamber, and the middle position of bell is equipped with seed
Brilliant lifting rod opening, protrudes into main chamber for SL axis and seed crystal connecting rod and draws high seed crystal growth.
Further, above-mentioned synchronous motor is adjustable speed motor, conducive to the effect for accelerating crucible loading and unloading when installing and debugging
Rate.
The case where to avoid support base from being in contact with bottom insulation board, needs between above-mentioned support base and bottom insulation board
Keep certain space length.Preferably, the support base uses graphite support base.
Beneficial effects of the present invention: the configuration of the present invention is simple, it is easy to operate, it is revolved using synchronous machine drives screw mechanism
Turn, to control the lifting of crucible lift device, not only realizes crucible and move up and down in thermal field in furnace, and the lifting position of crucible
Setting with speed is regulatable, the efficiency and the security performance during loading and unloading for more efficiently improving loading and unloading.
Detailed description of the invention:
Fig. 1 is the structural schematic diagram of the moveable sapphire crystal growing furnace of pedestal of the present invention；
Fig. 2 is the schematic diagram that crucible lift device moves to main chamber in the specific embodiment of the invention；
Fig. 3 is that SL axis and seed crystal connecting rod protrude into main chamber and draw high seed crystal growth in the specific embodiment of the invention
Schematic diagram；
In figure: 1- furnace body, 2- main chamber, 3- mobile cavity, 4- support base, 5- screw mechanism, 6- synchronous motor, 7- support
Column, 8- crucible pallet, 9- crucible, the bottom 10- heater, the bottom 11- insulation board, 12- bell, 13- seed crystal lifting bar opening, 14-SL
Axis, 15- seed crystal connecting rod, 16- sapphire crystal.
Specific embodiment:
Technical solution of the present invention is described in detail with reference to the accompanying drawing.
As shown in Figures 1 to 3, the moveable sapphire crystal growing furnace of a kind of pedestal, including furnace body 1,1 internal upper part of furnace body point
For main chamber 2, lower part is divided into mobile cavity 3；It is equipped with crucible lift device in the mobile cavity 3, crucible lift device is by support base
4, screw mechanism 5 and synchronous motor 6 are constituted, and support base 4 is horizontally installed between screw mechanism 5, and synchronous motor 6 is set to shifting
The bottom of dynamic chamber 3, and be connected with screw mechanism 5 and support base 4 is driven to move up and down；Fixed weldering in the support base 4
It is connected to support column 7, crucible pallet 8 is fixedly mounted above support column 7, crucible 9 is set on crucible pallet 8；In the support base 4
Bottom heater 10 is provided with below crucible pallet 8, heater 10 lower end in bottom is equipped with bottom insulation board 11；The main chamber 2 of the furnace body 1
For incubation cavity, bell 12 is installed in main chamber 2, the middle position of bell 12 is equipped with seed crystal lifting bar opening 13, is used for SL axis 14
It is protruded into main chamber 2 with seed crystal connecting rod 15 and draws high seed crystal growth.
When practical operation, the power supply of opening operation platform, the starting of setting control synchronous motor 6 provides for screw mechanism 5
Power is raised above the rotation driving support base 4 of screw mechanism 5；At this point, bottom heater 10 heats high purity aluminium oxide raw material
Melt is formed to fusing, this process high purity aluminium oxide raw material closes furnace in crucible 9, and the bell 3 in 1 main chamber 2 of furnace body, which is in, to be closed
Close sealing state；When single crystal seed touches molten surface in crucible 9, make to start crystal in the solid liquid interface of seed crystal and melt
SL axis 14 and seed crystal connecting rod 15 are protruded into main chamber 2 by seed crystal lifting bar opening 13, seed crystal are up drawn high by growth,
And the power of heater is controlled simultaneously, and finally make monocrystalline solid liquid interface from top gradually passage solidification down, it is final solidified at one
A sapphire crystal 16.
Claims (5)
1. a kind of moveable sapphire crystal growing furnace of pedestal, including furnace body (1), furnace body (1) internal upper part is divided into main chamber (2),
Lower part is divided into mobile cavity (3), it is characterised in that: crucible lift device is equipped in the mobile cavity (3), crucible lift device is by propping up
Pedestal (4), screw mechanism (5) and synchronous motor (6) is supportted to constitute；The support base (4) be horizontally installed to screw mechanism (5) it
Between, synchronous motor (6) is set to the bottom of mobile cavity (3), and is connected with screw mechanism (5) and drives on support base (4)
Lower movement；It is fixedly welded with support column (7) on the support base (4), crucible pallet (8) is fixedly mounted above support column (7),
Crucible (9) are set on crucible pallet (8)；Bottom heater is provided with below crucible pallet (8) on the support base (4)
(10), heater (10) lower end in bottom is equipped with bottom insulation board (11).
2. the moveable sapphire crystal growing furnace of a kind of pedestal according to claim 1, it is characterised in that: the furnace body
(1) main chamber (2) is incubation cavity, is equipped with bell (12) in main chamber (2), the middle position of bell (12) is mentioned equipped with seed crystal
Pull rod is open (13), protrudes into main chamber (2) for SL axis (14) and seed crystal connecting rod (15) and draws high seed crystal growth.
3. the moveable sapphire crystal growing furnace of a kind of pedestal according to claim 1, it is characterised in that: the synchronization
Motor (6) is adjustable speed motor.
4. the moveable sapphire crystal growing furnace of a kind of pedestal according to claim 1, it is characterised in that: the support
Certain space length is kept between pedestal (4) and bottom insulation board (11).
5. the moveable sapphire crystal growing furnace of a kind of pedestal according to claim 1 or 4, it is characterised in that: described
Support base (4) uses graphite support base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811190245.XA CN109023525A (en) | 2018-10-12 | 2018-10-12 | A kind of moveable sapphire crystal growing furnace of pedestal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811190245.XA CN109023525A (en) | 2018-10-12 | 2018-10-12 | A kind of moveable sapphire crystal growing furnace of pedestal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109023525A true CN109023525A (en) | 2018-12-18 |
Family
ID=64616593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811190245.XA Pending CN109023525A (en) | 2018-10-12 | 2018-10-12 | A kind of moveable sapphire crystal growing furnace of pedestal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109023525A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108147816A (en) * | 2017-12-12 | 2018-06-12 | 西南科技大学 | For the graphite support system of gas big gun/cannon pre-add thermal shock experiment |
| CN114032617A (en) * | 2021-11-09 | 2022-02-11 | 上海汉虹精密机械有限公司 | Action system for charging and taking crystals of silicon carbide crystal growing furnace |
| CN114561703A (en) * | 2022-02-24 | 2022-05-31 | 天通银厦新材料有限公司 | Crucible balance supporting system of large-size sapphire crystal growth furnace |
| CN115821370A (en) * | 2022-10-25 | 2023-03-21 | 浙江晶盛机电股份有限公司 | Crystal growing furnace |
| CN116121879A (en) * | 2023-04-14 | 2023-05-16 | 内蒙古晶环电子材料有限公司 | Be used for jumbo size sapphire crystal growth preparation facilities |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202945360U (en) * | 2012-09-26 | 2013-05-22 | 南京晶升能源设备有限公司 | Hydraulic lifting type crucible supporting system for sapphire single crystal furnace |
| CN103422163A (en) * | 2013-09-06 | 2013-12-04 | 上海森松压力容器有限公司 | Device and method for growing sapphire single crystals |
| KR20140044544A (en) * | 2012-10-05 | 2014-04-15 | 비아이신소재 주식회사 | Single crystal growth system and method |
| CN206204472U (en) * | 2016-11-17 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | It is capable of achieving quantity-produced crystal growing furnace |
| CN208869722U (en) * | 2018-10-12 | 2019-05-17 | 天通银厦新材料有限公司 | A kind of moveable sapphire crystal growing furnace of pedestal |
-
2018
- 2018-10-12 CN CN201811190245.XA patent/CN109023525A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202945360U (en) * | 2012-09-26 | 2013-05-22 | 南京晶升能源设备有限公司 | Hydraulic lifting type crucible supporting system for sapphire single crystal furnace |
| KR20140044544A (en) * | 2012-10-05 | 2014-04-15 | 비아이신소재 주식회사 | Single crystal growth system and method |
| CN103422163A (en) * | 2013-09-06 | 2013-12-04 | 上海森松压力容器有限公司 | Device and method for growing sapphire single crystals |
| CN206204472U (en) * | 2016-11-17 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | It is capable of achieving quantity-produced crystal growing furnace |
| CN208869722U (en) * | 2018-10-12 | 2019-05-17 | 天通银厦新材料有限公司 | A kind of moveable sapphire crystal growing furnace of pedestal |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108147816A (en) * | 2017-12-12 | 2018-06-12 | 西南科技大学 | For the graphite support system of gas big gun/cannon pre-add thermal shock experiment |
| CN108147816B (en) * | 2017-12-12 | 2020-08-04 | 西南科技大学 | Graphite support system for air gun/artillery pre-heating impact experiment |
| CN114032617A (en) * | 2021-11-09 | 2022-02-11 | 上海汉虹精密机械有限公司 | Action system for charging and taking crystals of silicon carbide crystal growing furnace |
| CN114032617B (en) * | 2021-11-09 | 2023-12-26 | 上海汉虹精密机械有限公司 | Action system for charging and taking crystals of silicon carbide crystal growth furnace |
| CN114561703A (en) * | 2022-02-24 | 2022-05-31 | 天通银厦新材料有限公司 | Crucible balance supporting system of large-size sapphire crystal growth furnace |
| CN115821370A (en) * | 2022-10-25 | 2023-03-21 | 浙江晶盛机电股份有限公司 | Crystal growing furnace |
| CN115821370B (en) * | 2022-10-25 | 2024-03-12 | 浙江晶盛机电股份有限公司 | Crystal growth furnace |
| CN116121879A (en) * | 2023-04-14 | 2023-05-16 | 内蒙古晶环电子材料有限公司 | Be used for jumbo size sapphire crystal growth preparation facilities |
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