CN103643285A - External charging mechanism for single crystal furnace - Google Patents
External charging mechanism for single crystal furnace Download PDFInfo
- Publication number
- CN103643285A CN103643285A CN201310643320.4A CN201310643320A CN103643285A CN 103643285 A CN103643285 A CN 103643285A CN 201310643320 A CN201310643320 A CN 201310643320A CN 103643285 A CN103643285 A CN 103643285A
- Authority
- CN
- China
- Prior art keywords
- vacuum
- quartz crucible
- single crystal
- charging mechanism
- vacuum pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to an auxiliary device of a czochralski silicon single crystal growth device and aims to provide an external charging mechanism for a single crystal furnace. The external charging mechanism for the single crystal furnace comprises a quartz crucible, a vacuum sucker, a hand-operated vacuum valve, a vacuum gauge, a seal ring and a vacuum pump, wherein the vacuum sucker is provided with at least two air nozzles which are respectively connected with the hand-operated vacuum valve and the vacuum gauge, the hand-operated vacuum valve is connected with the vacuum pump through the air nozzles, and the vacuum sucker is in airtight connection with the quartz crucible through the seal ring. The polycrystalline silicon material can be charged into the quartz crucible at any time during the crystal pulling process without waiting for the completion of the clearing of the furnace, and then the quartz crucible is placed into a thermal field. The charging process is changed from the completely manual way to the mechanical way, so that the charging time is saved, the operation becomes more simple and convenient, and the unnecessary loss caused when the polycrystalline crystal raw material chippings fall into the thermal field in the charging process can be avoided.
Description
Technical field
The invention relates to the utility appliance of Modelling of Crystal Growth in CZ-Si Pulling equipment, particularly for the outside charging mechanism of single crystal growing furnace.
Background technology
Pulling of silicon single crystal growth furnace is topmost silicon single crystal manufacturing apparatus in the world at present.Adopt pulling of crystals manufacturing process to produce high-quality silicon crystal.According to the atomic arrangement of silicon single crystal and crystallization rule, raw material polysilicon block is put into quartz crucible, in single crystal growing furnace, heating is melted it, controls temperature, guarantees that the silicon solution after melting can be in liquid level crystallization.Again the bar-like single crystal silicon (seed crystal) of a diameter 10mm left and right is put into liquid level slowly, its part is immersed in solution, at suitable temperature, the Siliciumatom of silicon solution can be under the impact of seed crystal along with its atomic arrangement structure is in solution surface crystallization, form silicon single-crystal.By seed chuck, monocrystalline upwards mentioned stably and add suitable rotation, under stable environment, the continuously crystallization of silicon solution, finally forms the silicon single crystal of a body cylindrical shape.
Charging is a very important step in czochralski crystal growing furnace production process.The method of straight pulling silicon single crystal furnace charging at present mostly adopts full manual operations, and its operation steps comprises that raw material transport is passed to stokehold, and crucible is put into stove thermal field, and raw material is little by little transferred in crucible from body of heater.Whole process is very slow, and in charging process, will avoid silicon material debris to fall in thermal field, therefore operates more loaded down with trivial details.Since crystal for straight drawing monocrystal growth stove comes into operation up to now, such situation fails effectively to be improved all the time.In addition, czochralski crystal growing furnace is that other preparation works are carried out, and treats that crucible puts into after body of heater just crucible in the past and feed, and cannot feed at other times.Save charge time, make the process operation of charging simple and safe, be that related production enterprise wants technological difficulties that break through always.
Summary of the invention
Main purpose of the present invention is to overcome deficiency of the prior art, provides and can shorten charge time and charging process safe outside charging mechanism simple to operate.For solving the problems of the technologies described above, solution of the present invention is:
Be provided for the outside charging mechanism of single crystal growing furnace, comprise for filling the quartz crucible of polycrystalline silicon raw material, also comprise vacuum pad, manual vacuum valve, vacuum meter, sealing-ring and vacuum pump, vacuum pad is provided with at least two air nozzles, an air nozzle is connected with manual vacuum valve, and another one air nozzle is connected with vacuum meter, and manual vacuum valve is provided with air nozzle, air nozzle on manual vacuum valve is connected with vacuum pump by corrugated tube, and the air nozzle on corrugated tube and manual vacuum valve adopts quick-release mode of connection; On vacuum pad, be provided with sealing-ring, and be tightly connected by sealing-ring and quartz crucible, vacuum pump is evacuated for the enclosed housing that quartz crucible and vacuum pad are formed, and vacuum meter is for the barometric point in the enclosed housing of measuring quartz crucible and vacuum pad and forming.
As further improvement, the sealing-ring on described vacuum pad adopts L shaped sealing-ring.
As further improvement, described corrugated tube adopts quick release flange to be connected with the air nozzle on manual vacuum valve.
As further improvement, described vacuum pad is the vacuum pad of metal material.
As further improvement, the air nozzle on described vacuum pad is provided with three, for converting the link position of manual vacuum valve.
As further improvement, described outside charging mechanism also comprises conveyer, for mobile quartz crucible; Conveyer adopts charging carriage, and charging carriage is provided with block and damping device, and damping device adopts shock spring.
As further improvement, described outside charging mechanism also comprises for quartz crucible and vacuum pad integral hoisting being put into the lifting appliance of thermal field of single crystal furnace, vacuum meter is provided with suspension ring, lifting appliance lifts by crane and move operation quartz crucible and vacuum pad integral body by suspension ring, is provided with Promoting Layered Buffer spring between lifting appliance and suspension ring.
As further improvement, described lifting appliance adopts fully automatic hydraulic crane.
The control method of the outside charging mechanism for single crystal growing furnace based on described is provided, fully automatic hydraulic hangs when the quartz crucible of filling polycrystalline silicon raw material is lifted in thermal field of single crystal furnace, regard vacuum pad and quartz crucible as two hemisphere, when its inner air is drawn out of, at normal atmosphere P
oeffect under, vacuum pad and quartz crucible are tightly pulled together, hoisting process meets formula: F>=K * mg, F=(P
o-p) * π d
2/ 4, wherein K is safety coefficient, and m is the total mass of quartz crucible and polycrystalline silicon raw material, and g is universal gravity constant, and F is the suction of vacuum pad to quartz crucible, P
ofor normal atmosphere, p is the air pressure in the enclosed housing that forms of quartz crucible and vacuum pad, the diameter that d is quartz crucible; Thermal field of single crystal furnace is 18～24 cun, and the maximum charge amount of polycrystalline silicon raw material is not more than 200Kg, and quartz crucible quality is not more than 20Kg, and m is not more than 220Kg, and d is not less than 450mm, normal atmosphere P
ovalue be 1.013 * 10
5pa, the value of safety coefficient K gets 6.5, draws in hoisting process, and the atmospheric pressure value p in the enclosed housing that quartz crucible and vacuum pad form is less than 1 * 10
4pa, while guaranteeing lifting, the reading of vacuum meter is less than 1 * 10
4pa.
Principle of work of the present invention: use a vacuum pad and a special sealing-ring to seal with the quartz crucible of filling polycrystalline silicon raw material, can it be vacuumized by the valve of manual vacuum valve, conveyer is used for transporting the quartz crucible that installs polycrystalline silicon raw material, and fully automatic hydraulic crane is used for the polycrystalline silicon raw material installing to hang in together with quartz crucible in the thermal field of single crystal growing furnace.
Compared with prior art, the invention has the beneficial effects as follows:
Can in whenever polycrystalline silicon material being packed in quartz crucible of crystal pulling, do not need to wait for that to wipe stove complete, then quartz crucible is first put into thermal field and carry out again.Make the charging process change mechanize into by total man's work, saved the time of charging, make operation simpler, convenient, also avoided in charging process polycrystalline silicon raw material chip to fall into simultaneously and in thermal field, brought necessary loss.
Accompanying drawing explanation
Schematic three dimensional views when Fig. 1 is the present invention for the outside charging mechanism work of single crystal growing furnace.
To be the present invention install the schematic diagram of material while vacuumizing for the outside charging mechanism of single crystal growing furnace to Fig. 2.
Fig. 3 is the present invention is the schematic diagram of single crystal growing furnace when filling with substance for the outside charging mechanism of single crystal growing furnace.
Fig. 4 is that the present invention is for the principle calculation formula schematic diagram of the outside charging mechanism of single crystal growing furnace.
Reference numeral in figure is: 1 fully automatic hydraulic crane; 2 Promoting Layered Buffer springs; 3 vacuum meters; 4 manual vacuum valves; 5 vacuum pads; 6L shape sealing-ring; 7 quartz crucibles; 8 polycrystalline silicon raw materials; 9 charging carriages; 10 corrugated tubes; 11 vacuum pumps; 12 single crystal growing furnaces; 13 hand-held switches.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
The outside charging mechanism for single crystal growing furnace in Fig. 1, Fig. 2 comprises quartz crucible 7, vacuum pad 5, manual vacuum valve 4, vacuum meter 3 and vacuum pump 11.Vacuum pad 5 is that metal material is made, and utilizes special L shaped sealing-ring 6 and quartz crucible 7 to be tightly connected.Vacuum pad 5 is provided with three air nozzles, an air nozzle is connected with manual vacuum valve 4, be used for controlling the inner and extraneous gas vent of quartz crucible 7, another one air nozzle is connected with vacuum meter 3, by the reading of vacuum meter 3, judge the vacuum condition of quartz crucible 7 inside, the design of three air nozzles here can select two air nozzles to use flexible and changeablely.Manual vacuum valve 4 is provided with air nozzle, and the air nozzle on manual vacuum valve 4 is connected with vacuum pump 11 by corrugated tube 10, after vacuum pad 5 and quartz crucible 7 sealings, can utilize vacuum pump 11 to vacuumize it, makes their tight adhesives.Corrugated tube 10 adopts quick-release mode of connection, the preferred quick release flange of quick-release mode of connection with the air nozzle on manual vacuum valve 4.
Outside charging mechanism also comprises the conveyer for mobile quartz crucible 7, adopts charging carriage 9 as conveyer here.Charging carriage 9 is provided with block and damping device, can avoid in transportation because vibrations cause damage to quartz crucible 7.Here adopt shock spring as damping device.
As shown in Figure 3, outside charging mechanism is also provided with lifting appliance, for quartz crucible 7 and vacuum pad 5 integral hoistings that polycrystalline silicon raw material 8 is housed are put into single crystal growing furnace 12 thermal fields.The vacuum meter 3 of vacuum pad 5 is provided with suspension ring, and lifting appliance is connected with the quartz crucible 7 that vacuum pad 5 is installed by suspension ring, and is provided with Promoting Layered Buffer spring 2 between lifting appliance and suspension ring.Here adopt fully automatic hydraulic crane 1 as lifting appliance.
Fully automatic hydraulic hangs when the quartz crucible 7 of filling polycrystalline silicon raw material 8 is lifted in single crystal growing furnace 12 thermal fields, as shown in Figure 4, regards vacuum pad 5 and quartz crucible 7 as two hemisphere, when its inner air is drawn out of, at normal atmosphere P
oeffect under, vacuum pad 5 and quartz crucible 7 are tightly pulled together.Hoisting process meets formula: F>=K * mg, F=(P
o-p) * π d
2/ 4, wherein K is safety coefficient, and m is the total mass of quartz crucible 7 and polycrystalline silicon raw material 8, and g is universal gravity constant, and F is the suction of 5 pairs of quartz crucibles 7 of vacuum pad, P
ofor normal atmosphere, p is the air pressure in the enclosed housing that forms of quartz crucible 7 and vacuum pad 5, and d is the diameter of quartz crucible 7.Single crystal growing furnace 12 thermal fields are 18～24 cun, and the maximum charge amount of polycrystalline silicon raw material 8 is not more than 200Kg, and quartz crucible 7 quality are not more than 20Kg, and m is not more than 220Kg, and d is not less than 450mm, normal atmosphere P
ovalue be 1.013 * 10
5pa, the value of safety coefficient K gets 6.5, draws in hoisting process, and the atmospheric pressure value p in the enclosed housing that quartz crucible 7 and vacuum pad 5 form is less than 1 * 10
4pa, while guaranteeing lifting, the reading of vacuum meter 3 is less than 1 * 10
4pa, in outside charging process, quartz crucible 7 can not thrown off with vacuum pad 5, meets accident.This principle illustrates that outside charging mechanism is applicable to the single crystal growing furnace 12 of any specification quartz crucible 7.
During use, the concrete grammar that utilizes the present invention to feed for single crystal growing furnace 12 is:
First quartz crucible 7 openings are checked and are placed on charging carriage 9, toward 7 li of dress polycrystalline silicon raw materials 8 of quartz crucible, after filling, on quartz crucible 7, L shaped sealing-ring 6 is sticked on edge, vacuum pad 5 is covered and posted on the quartz crucible 7 of L shaped sealing-ring 6, in the air nozzle of manual vacuum valve 4, connect corrugated tube 10, the other end of corrugated tube 10 connects vacuum pump 11.Record the now initial reading of vacuum meter 3, then open vacuum pump 11, and slowly open manual vacuum valve 4, the pointer of observing vacuum meter 3 changes.When approach-0.1MPa of pointer, fasten manual vacuum valve 4, close vacuum pump 11, remove the corrugated tube 10 connecting in manual vacuum valve 4 air nozzles.Then place 10 minutes, the pointer of observation vacuum meter 3 has unchanged, to be confirmed whether gas leakage.
After confirming that airtight cavity that quartz crucible 7 and vacuum pad 5 form is air tight, charging carriage 9 is shifted onto to the specified location on single crystal growing furnace 12 sides that need charging.With fully automatic hydraulic crane 1 by vacuum pad 5 together with quartz crucible 7 with and inner polycrystalline silicon raw material 8 hang in the graphite crucible in single crystal growing furnace 12, wait the putting into after graphite crucible of quartz crucible 7 safety and steadies of filling polycrystalline silicon raw material 8, slowly opening manual vacuum valve 4 starts to inflate in airtight cavity, observe the variation of vacuum meter 3 pointers, when it gets back to the initial reading recording at the beginning, inflation completes.Finally with fully automatic hydraulic crane 1, vacuum pad 5 sling and removed, taking away L shaped sealing-ring 6, completing the outside charging process of whole single crystal growing furnace 12.
Finally, it should be noted that above what enumerate is only specific embodiments of the invention.Obviously, the invention is not restricted to above embodiment, can also have a lot of distortion.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should think protection scope of the present invention.
Claims (9)
1. for the outside charging mechanism of single crystal growing furnace, comprise for filling the quartz crucible of polycrystalline silicon raw material, it is characterized in that, also comprise vacuum pad, manual vacuum valve, vacuum meter, sealing-ring and vacuum pump, vacuum pad is provided with at least two air nozzles, an air nozzle is connected with manual vacuum valve, another one air nozzle is connected with vacuum meter, manual vacuum valve is provided with air nozzle, air nozzle on manual vacuum valve is connected with vacuum pump by corrugated tube, and the air nozzle on corrugated tube and manual vacuum valve adopts quick-release mode of connection; On vacuum pad, be provided with sealing-ring, and be tightly connected by sealing-ring and quartz crucible, vacuum pump is evacuated for the enclosed housing that quartz crucible and vacuum pad are formed, and vacuum meter is for the barometric point in the enclosed housing of measuring quartz crucible and vacuum pad and forming.
2. the outside charging mechanism for single crystal growing furnace according to claim 1, is characterized in that, the sealing-ring on described vacuum pad adopts L shaped sealing-ring.
3. the outside charging mechanism for single crystal growing furnace according to claim 1, is characterized in that, described in, corrugated tube adopts quick release flange to be connected with the air nozzle on manual vacuum valve.
4. the outside charging mechanism for single crystal growing furnace according to claim 1, is characterized in that, described vacuum pad is the vacuum pad of metal material.
5. the outside charging mechanism for single crystal growing furnace according to claim 1, is characterized in that, the air nozzle on described vacuum pad is provided with three, for converting the link position of manual vacuum valve.
6. the outside charging mechanism for single crystal growing furnace according to claim 1, is characterized in that, described outside charging mechanism also comprises conveyer, for mobile quartz crucible; Conveyer adopts charging carriage, and charging carriage is provided with block and damping device, and damping device adopts shock spring.
7. the outside charging mechanism for single crystal growing furnace according to claim 1, it is characterized in that, described outside charging mechanism also comprises for quartz crucible and vacuum pad integral hoisting being put into the lifting appliance of thermal field of single crystal furnace, vacuum meter is provided with suspension ring, lifting appliance lifts by crane and move operation quartz crucible and vacuum pad integral body by suspension ring, is provided with Promoting Layered Buffer spring between lifting appliance and suspension ring.
8. the outside charging mechanism for single crystal growing furnace according to claim 7, is characterized in that, described lifting appliance adopts fully automatic hydraulic crane.
9. the control method based on the outside charging mechanism for single crystal growing furnace claimed in claim 8, it is characterized in that, fully automatic hydraulic hangs when the quartz crucible of filling polycrystalline silicon raw material is lifted in thermal field of single crystal furnace, regard vacuum pad and quartz crucible as two hemisphere, when its inner air is drawn out of, at normal atmosphere P
oeffect under, vacuum pad and quartz crucible are tightly pulled together, hoisting process meets formula: F>=K * mg, F=(P
o-p) * π d
2/ 4, wherein K is safety coefficient, and m is the total mass of quartz crucible and polycrystalline silicon raw material, and g is universal gravity constant, and F is the suction of vacuum pad to quartz crucible, P
ofor normal atmosphere, p is the air pressure in the enclosed housing that forms of quartz crucible and vacuum pad, the diameter that d is quartz crucible; Thermal field of single crystal furnace is 18～24 cun, and the maximum charge amount of polycrystalline silicon raw material is not more than 200Kg, and quartz crucible quality is not more than 20Kg, and m is not more than 220Kg, and d is not less than 450mm, normal atmosphere P
ovalue be 1.013 * 10
5pa, the value of safety coefficient K gets 6.5, draws in hoisting process, and the atmospheric pressure value p in the enclosed housing that quartz crucible and vacuum pad form is less than 1 * 10
4pa, while guaranteeing lifting, the reading of vacuum meter is less than 1 * 10
4pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310643320.4A CN103643285A (en) | 2013-12-03 | 2013-12-03 | External charging mechanism for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310643320.4A CN103643285A (en) | 2013-12-03 | 2013-12-03 | External charging mechanism for single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103643285A true CN103643285A (en) | 2014-03-19 |
Family
ID=50248563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310643320.4A Pending CN103643285A (en) | 2013-12-03 | 2013-12-03 | External charging mechanism for single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103643285A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103966666A (en) * | 2014-05-20 | 2014-08-06 | 江苏盎华光伏工程技术研究中心有限公司 | Polycrystalline silicon charging equipment and control method thereof |
| CN107841787A (en) * | 2017-12-15 | 2018-03-27 | 江苏润弛太阳能材料科技有限公司 | A kind of protector for solar energy quartz crucible damping |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201785545U (en) * | 2010-08-31 | 2011-04-06 | 大连连城数控机器有限公司 | Vacuum silicon material feeding device for single crystal furnace |
| CN102653882A (en) * | 2012-05-11 | 2012-09-05 | 天通控股股份有限公司 | Charging method and device of straight-pull silicon single crystals |
| CN202595328U (en) * | 2012-03-12 | 2012-12-12 | 特变电工新疆新能源股份有限公司 | Vacuum feeding device for single crystal furnaces |
| CN102995110A (en) * | 2011-09-16 | 2013-03-27 | 镇江仁德新能源科技有限公司 | Loading method for production of single crystals and pre-loading crucible |
| CN203639598U (en) * | 2013-12-03 | 2014-06-11 | 杭州慧翔电液技术开发有限公司 | External loading mechanism used for single crystal furnace |
-
2013
- 2013-12-03 CN CN201310643320.4A patent/CN103643285A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201785545U (en) * | 2010-08-31 | 2011-04-06 | 大连连城数控机器有限公司 | Vacuum silicon material feeding device for single crystal furnace |
| CN102995110A (en) * | 2011-09-16 | 2013-03-27 | 镇江仁德新能源科技有限公司 | Loading method for production of single crystals and pre-loading crucible |
| CN202595328U (en) * | 2012-03-12 | 2012-12-12 | 特变电工新疆新能源股份有限公司 | Vacuum feeding device for single crystal furnaces |
| CN102653882A (en) * | 2012-05-11 | 2012-09-05 | 天通控股股份有限公司 | Charging method and device of straight-pull silicon single crystals |
| CN203639598U (en) * | 2013-12-03 | 2014-06-11 | 杭州慧翔电液技术开发有限公司 | External loading mechanism used for single crystal furnace |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103966666A (en) * | 2014-05-20 | 2014-08-06 | 江苏盎华光伏工程技术研究中心有限公司 | Polycrystalline silicon charging equipment and control method thereof |
| CN103966666B (en) * | 2014-05-20 | 2016-06-15 | 江苏盎华光伏工程技术研究中心有限公司 | Polycrystalline silicon charge equipment and control method thereof |
| CN107841787A (en) * | 2017-12-15 | 2018-03-27 | 江苏润弛太阳能材料科技有限公司 | A kind of protector for solar energy quartz crucible damping |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203639598U (en) | External loading mechanism used for single crystal furnace | |
| JP6913430B2 (en) | Quartz tube and equipment for crystal growth by VB / VGF method | |
| CN202017072U (en) | Secondary charging device for single crystal furnace | |
| CN113638048B (en) | Method for growing indium phosphide single crystal by VGF method | |
| CN103643285A (en) | External charging mechanism for single crystal furnace | |
| JP4986921B2 (en) | Crucible lift device | |
| JP6631468B2 (en) | How to set the nozzle position of the remaining hot water suction device | |
| CN102181925A (en) | Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method | |
| CN104532341B (en) | The growing method of crucible structure and sapphire test tube for sapphire tube growth | |
| CN203373086U (en) | Crucible clamping device and crucible transport cart | |
| CN202297855U (en) | Furnace detaching device for graphite thermal field of single crystal furnace | |
| CN207567377U (en) | monocrystalline silicon feeding device | |
| CN104250848A (en) | Control method for utilizing external charging structure to charge polysilicon | |
| CN202530194U (en) | Crucible hoisting device | |
| CN110629289A (en) | Preparation method of low-brightness dark-spot 4 and 6-inch semi-insulating gallium arsenide polished wafer | |
| CN201506851U (en) | Seed crystal clamper for mono-crystal furnace | |
| CN202595328U (en) | Vacuum feeding device for single crystal furnaces | |
| CN206244924U (en) | A kind of device for growing silicon carbice crystals | |
| CN202610380U (en) | Thermal field lifting device of Czochralski single crystal furnace | |
| KR20140027509A (en) | Vacuum storage method and device for crystalline material | |
| CN203079541U (en) | Crucible mounting and dismounting clamp | |
| CN210974923U (en) | Vacuum chuck for czochralski method single crystal | |
| CN208517577U (en) | A kind of semiconductor silicon single crystal furnace with concealed heater | |
| CN113716566A (en) | Preparation method of high-purity silicon carbide source powder | |
| CN106400102A (en) | Growth equipment and method thereof capable of achieving online annealing of single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140319 |