CN206244924U - A kind of device for growing silicon carbice crystals - Google Patents
A kind of device for growing silicon carbice crystals Download PDFInfo
- Publication number
- CN206244924U CN206244924U CN201621345337.7U CN201621345337U CN206244924U CN 206244924 U CN206244924 U CN 206244924U CN 201621345337 U CN201621345337 U CN 201621345337U CN 206244924 U CN206244924 U CN 206244924U
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- China
- Prior art keywords
- insulation layer
- crucible
- insulation
- raw material
- growing silicon
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Abstract
The utility model is related to a kind of device for growing silicon carbice crystals, including crucible, closure insulation, side heat-insulation layer, bottom heat-insulation layer, induction coil and primary heater；Described crucible side, bottom and top measurements of the chest, waist and hips are coated with side heat-insulation layer, bottom heat-insulation layer and closure insulation, and described closure insulation upper end sets fluted；Described primary heater is arranged on position between side heat-insulation layer and bottom heat-insulation layer and crucible；Described crucible inside includes raw material area and seed crystal area.The beneficial effects of the utility model are：Oxygen impurities content in SiC crystal growth is reduced, the quality of carborundum crystals is substantially increased.
Description
Technical field
The utility model is related to a kind of SiC single crystal growth dress that can stablize growth hypoxemia impurity content and low induced defect
Put, be specifically related to a kind of device for growing silicon carbice crystals, belong to carborundum crystals and prepare class field.
Background technology
In carborundum crystals preparation field, growing method the most ripe is physical vapor transport（PVT）.It is so-called
Sic powder is exactly heated to 2200-2400 °C by PVT methods, because raw material has certain stabilization with seed crystal in growth room
Gradient, makes its distillation be transferred on cold end seed crystal and crystallizes into bulk crystals.The sic raw material melt impact that it is in high-temperature region
Crucible can bring the silica in crucible into melt, and oxygen introduces sky as impurity element in the single-crystal silicon carbide that top crystallizes
The various defects such as position, dislocation, and then reduce crystalline quality.
Therefore, how to provide a kind of device of growing silicon carbice crystals environment, problem above is effectively reduced to crystal mass
Influence, be the utility model research purpose.
Utility model content
To overcome the shortcomings of the existing technology, the utility model provides a kind of device for growing silicon carbice crystals, using life
Stove periphery long has reached reduction oxygen impurities and has introduced defect and cause defect plus the effect in energization solenoid and then generation magnetic field
Effect.
To solve prior art problem, the technical scheme that the utility model is used is：
A kind of device for growing silicon carbice crystals, including crucible, closure insulation, side heat-insulation layer, bottom heat-insulation layer, sensing
Coil, primary heater and solenoid；Described crucible side, bottom and top measurements of the chest, waist and hips are coated with side heat-insulation layer, bottom heat-insulation layer and top insulation
Layer, described closure insulation upper end sets fluted；Described primary heater is arranged on side heat-insulation layer and bottom heat-insulation layer and crucible
Between position；Described crucible inside includes raw material area and seed crystal area, and the solenoid is arranged on induction coil outside, and with original
Material position is corresponding, for producing magnetic field around raw material.
Further, described raw material area sets 2300-2400 DEG C of temperature, and seed crystal area sets 2100-2200 DEG C of temperature
Degree.
Further, vacuum state is set to inside described crucible, and pours inert gas；Described inert gas is
Xenon.
Further, the intensity in the magnetic field is 1000 Gausses.
The beneficial effects of the utility model are：Oxygen impurities content in SiC crystal growth is reduced, silicon carbide whisker is substantially increased
The quality of body.
Brief description of the drawings
Fig. 1 is structure chart of the present utility model.
Wherein：Crucible 1, closure insulation 2, side heat-insulation layer 3, bottom heat-insulation layer 4, induction coil 5, primary heater 6, seed crystal area 7,
Raw material area 8, groove 9, solenoid 10.
Specific embodiment
In order that those skilled in the art can more understand technical solutions of the utility model, 1 pair of sheet below in conjunction with the accompanying drawings
Utility model is further analyzed.
As shown in figure 1, a kind of device for growing silicon carbice crystals, including crucible 1, closure insulation 2, side heat-insulation layer 3,
Bottom heat-insulation layer 4, induction coil 5, primary heater 6 and solenoid 10；The side of crucible 1, bottom and top measurements of the chest, waist and hips be coated with side heat-insulation layer 3,
Bottom heat-insulation layer 4 and closure insulation 2, the upper end of closure insulation 2 set fluted 9；Primary heater 6 is arranged on side heat-insulation layer 3 and bottom is protected
Position between warm layer 4 and crucible 1；The inside of crucible 1 includes raw material area 8 and seed crystal area 7, and the solenoid is arranged on outside induction coil
Side, and it is corresponding with raw material position, for producing magnetic field around raw material.
Raw material area 8 sets 2300-2400 DEG C of temperature, and seed crystal area 7 sets 2100-2200 DEG C of temperature.
Vacuum state is set to inside crucible 1, and pours inert gas；Described inert gas is xenon.
During utility model works, SiC raw materials and seed crystal are filled and be bonded in crucible on request, crucible 1 is put into SiC
Crystal growing furnace, growth furnace periphery adds energization solenoid 10；
Stove evacuation will be grown, will be that crystal growing furnace is filled with the inert gas of scheduled volume crystal growth system is purified
Burner hearth, is repeated several times this step；
Heater is opened, the temperature of growth room in growth furnace is improved, making the raw material area 8 of filling sic raw material has
2300-2400 DEG C of temperature, seed crystal area 7 has 2100-2200 DEG C of temperature；
For solenoid 10 is powered while heating raw material, magnetic field can be produced after energization around raw material, suppress melt SiC's
Convection current, reduces the percussion to crucible；Magnetic field intensity is controlled in 1000 Gauss；Apply magnetic field until crystal growth terminates
Untill, first terminate heater, then remove magnetic field.
It is inert gas that the air pressure of the SiC single crystal growth furnace controls the atmosphere in 300-2000Pa scopes, growth system.
Work as use with silica as main component with the crucible of raw material SiC directly contacts in SiC single crystal grower
During physical vapor transport (PVT methods) growth carborundum crystals, the oxygen impurities in crucible can be mixed into raw material and enter growth
Monocrystalline in.Magnetic field is added around SiC raw material melts, weakens mechanical wave and temperature fluctuation, it is suppressed that the convection current of fluid, subtracted
Few impact of the fluid to crucible, the thickness of increase oxygen official's collection layer, the entrance raw material melt for making the material in crucible as few as possible, from
And reduce the oxygen content in the SiC single crystal of deposition.
Technical scheme provided herein is described in detail above, embodiment used herein is to the application
Principle and implementation method be set forth, the explanation of above example is only intended to help and understands the present processes and its core
Thought is thought；Simultaneously for those of ordinary skill in the art, according to the thought of the application, in specific embodiment and model is applied
Place and will change, in sum, this specification content should not be construed as the limitation to the application.
Claims (4)
1. a kind of device for growing silicon carbice crystals, it is characterised in that：Protected including crucible, closure insulation, side heat-insulation layer, bottom
Warm layer, induction coil, primary heater and solenoid；Described crucible side, bottom and top measurements of the chest, waist and hips are coated with side heat-insulation layer, bottom heat-insulation layer
And closure insulation, described closure insulation upper end sets fluted；Described primary heater is arranged on side heat-insulation layer and bottom insulation
Position between layer and crucible；Described crucible inside includes raw material area and seed crystal area, and the solenoid is arranged on outside induction coil
Side, and it is corresponding with raw material position, for producing magnetic field around raw material.
2. a kind of device for growing silicon carbice crystals according to claim 1, it is characterised in that：Described raw material area
2300-2400 DEG C of temperature is set, and seed crystal area sets 2100-2200 DEG C of temperature.
3. a kind of device for growing silicon carbice crystals according to claim 1, it is characterised in that：In described crucible
Portion is set to vacuum state, and pours inert gas；Described inert gas is xenon.
4. a kind of device for growing silicon carbice crystals according to claim 1, it is characterised in that：The magnetic field it is strong
It is 1000 Gausses to spend.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345337.7U CN206244924U (en) | 2016-12-09 | 2016-12-09 | A kind of device for growing silicon carbice crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345337.7U CN206244924U (en) | 2016-12-09 | 2016-12-09 | A kind of device for growing silicon carbice crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206244924U true CN206244924U (en) | 2017-06-13 |
Family
ID=59005718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621345337.7U Expired - Fee Related CN206244924U (en) | 2016-12-09 | 2016-12-09 | A kind of device for growing silicon carbice crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206244924U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
-
2016
- 2016-12-09 CN CN201621345337.7U patent/CN206244924U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170613 Termination date: 20201209 |