CN204417638U - Improve Heating tube and the crystal growing apparatus of crystalline growth velocity - Google Patents
Improve Heating tube and the crystal growing apparatus of crystalline growth velocity Download PDFInfo
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- CN204417638U CN204417638U CN201420784395.4U CN201420784395U CN204417638U CN 204417638 U CN204417638 U CN 204417638U CN 201420784395 U CN201420784395 U CN 201420784395U CN 204417638 U CN204417638 U CN 204417638U
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Abstract
The utility model provides a kind of Heating tube and the crystal growing apparatus that improve crystalline growth velocity, Heating tube comprises graphite cylinder body, the wall thickness of described cylindrical shell lower part and sic raw material corresponding part is thin, and the wall thickness of this part and plumbago crucible wall thickness sum are within skin effect thickness range, the wall thickness of described cylindrical shell upper part is greater than the wall thickness of described cylindrical shell lower part.The utility model is by the design upper thick and lower thin to Heating tube, realize the temperature at raw material and seed crystal place, the temperature significantly improving raw material district can be realized, and the temperature at seed crystal place remains unchanged substantially, thus the large thermograde realized required for fast crystal growth, improve crystalline growth velocity, experimental repeatability is good, and reduce production cost greatly, solve now methodical contaminant problem simultaneously.
Description
Technical field
The utility model belongs to growing silicon carbice crystals technical field, particularly relates to a kind of Heating tube and the crystal growing apparatus that improve crystalline growth velocity.
Background technology
As third generation semiconductor material, silicon carbide has very excellent physics, chemical property, and this just determines silicon carbide and has broad application prospects and the market space in fields such as high-end photoelectricity, high-power, microwave radios.
Physical vapor transport is the method that grow silicon carbide crystals is the most ripe in the world at present.The ultimate principle of growing silicon carbice crystals is as follows: sic raw material and silicon carbide seed are put into high purity graphite crucible, wherein sic raw material is in high-temperature zone (2200-2400 DEG C), silicon carbide seed is in relative low temperature place (2000-2300 DEG C), after reaching design temperature, the sic raw material at high temperature place decomposes, in a gaseous form to seed crystal place transmission, and on seed crystal forming core, grow up, finally form carborundum crystals.In fact, raw material is the motivating force of crystal growth with the temperature contrast (i.e. thermograde) between seed crystal, and as can by thermograde people for widening, then crystalline growth velocity also will increase.
The method of present raising crystalline growth velocity mostly is: in sic raw material, add silica flour or pass into silane, but is easy in crystal, introduce silicon inclusion, and increases the regulating parameter of crystal growth; Reduce crystal growth air pressure, improve the transport capability of raw material, but the carbon wrap impurity in crystal may be increased.
How to improve by improving crystal growing apparatus the problem that crystalline growth velocity becomes those skilled in the art's research.
Utility model content
Problem to be solved in the utility model is to provide a kind of Heating tube improving crystalline growth velocity.
For solving the problem, the technical solution adopted in the utility model: a kind of Heating tube improving crystalline growth velocity, comprise graphite cylinder body, the wall thickness of described cylindrical shell lower part and sic raw material corresponding part is thin, and the wall thickness of this part and plumbago crucible wall thickness sum are within skin effect thickness range, the wall thickness of described cylindrical shell upper part is greater than wall thickness 5mm to the 30mm of described cylindrical shell lower part.
Described cylindrical shell is two sections formula structure, is provided with graphite felt between upper part and lower part.
The height of described graphite felt is 5-20mm.
The wall thickness of described cylindrical shell upper part is 15-30mm, and the wall thickness of described lower part is 5-15mm.
A kind of crystal growing apparatus, comprise plumbago crucible and be sheathed on the Heating tube outside described plumbago crucible, described Heating tube adopts above-mentioned Heating tube.
The advantage that the utility model has and positively effect are: the utility model is by the design upper thick and lower thin to Heating tube, realize the temperature at raw material and seed crystal place, the temperature significantly improving raw material district can be realized, and the temperature at seed crystal place remains unchanged substantially, thus the large thermograde realized required for fast crystal growth, improve crystalline growth velocity, experimental repeatability is good, and reduce production cost greatly, solve now methodical contaminant problem simultaneously; Graphite felt interval is used between two sections of Heating tubes, with the thermosteresis avoiding bottom Heating tube to cause to the thermal conduction of top Heating tube, and then ensure that bottom Heating tube has higher temperature, realize increasing the thermograde in growth system, accelerate crystalline growth velocity further.
Accompanying drawing explanation
Fig. 1 is the utility model coordinates growing crystal structure principle chart with crucible;
In figure: 1-upper part, 2-lower part, 3-graphite felt, 4-sic raw material, 5-seed crystal, 6-crucible.
Embodiment
Now with reference to the accompanying drawings comparatively detailed description is carried out to the utility model, as shown in Figure 1, a kind of Heating tube improving crystalline growth velocity, comprise graphite cylinder body, described cylindrical shell lower part 2 is thin with the wall thickness of sic raw material corresponding part, and the wall thickness of this part and plumbago crucible 6 wall thickness sum are within skin effect thickness range, the wall thickness of described cylindrical shell upper part 1 is greater than wall thickness 5mm to the 30mm of described cylindrical shell lower part 2.
Described cylindrical shell is two sections formula structure, is provided with graphite felt 3 between upper part 1 and lower part 2.
The height of described graphite felt 3 is 5-20mm.
The wall thickness of described cylindrical shell upper part 1 is 15-30mm, and the wall thickness of described lower part 2 is 5-15mm.
A kind of crystal growing apparatus, the Heating tube comprising plumbago crucible 6 and be sheathed on outside described plumbago crucible 6, described Heating tube adopts above-mentioned Heating tube.
Principle of work:
Prior art is usually in crystal growing process, and raw material and the relative seed crystal of plumbago crucible temperature of lower and crucible upper temp want high, and this is the exclusive requirement of formation temperature gradient.For induction heating, in crystal growing crucible, the temperature of system or origin of heat produce heat (eddy-current heating) to the thermal conduction in crucible in Heating tube.For induction heating, there is the skin effect (heating of heating graphite cylinder is mainly derived from heating graphite tube outer surface certain depth) of induction heating, (wherein ρ graphite resistance rate, μ are the relative magnetic permeability of graphite, f is intermediate frequency power supply frequency as Suo Shi calculation formula (1) for the efficient heat generation thickness of skin effect, the thickness of usual graphite piece Frequency Induction Heating skin effect is 15-25mm), outside this heating thickness, heat transportation is then mainly through graphite heat conducting (more than 2000 DEG C graphite heat conductings are poor, and thermal conductivity is less than 50W/Kcm).The design uses two-stage structure Heating tube, it is thinner that its feature is to make lower Heating tube (corresponding sic raw material part) wall thickness, object is that Heating tube and plumbago crucible wall thickness sum are within skin effect thickness range, makes this part graphite material temperature maximum; And corresponding Heating tube upper thickness is comparatively large, after graphite coupling heating, caloric requirement is transmitted in crucible by graphite material, and then less to the heat supply of growth system.Another feature is: use graphite felt interval between two sections of Heating tubes, with the thermosteresis avoiding bottom Heating tube to cause to the thermal conduction of top Heating tube, and then ensures that bottom Heating tube has higher temperature, realizes increasing the thermograde in growth system.
The utility model is use two sections of Heating tubes, can realize the flexible of upper and lower Heating tube to growth system heat conduction heat, the Heating tube part in corresponding raw material district is thinner, and Heating tube top is thicker, with graphite felt interval between two sections of Heating tubes, system bottom (crucible bottom and Heating tube bottom) the thermal value direct heat conduction raw material district making raw material corresponding like this, thus the temperature greatly improving raw material place, and keep seed crystal place temperature-resistant or less.
With two groups of experiments, effect of the present utility model is illustrated below:
Experiment 1.
Conventional crystal growth Heating tube is used to carry out growth experiment (Heating tube internal diameter is 160mm, wall thickness 15mm, is highly 250mm), as shown in Figure 1.Adopt Medium frequency induction crystal growing furnace to carry out crystal growth experiment, setting test point temperature is 2100 DEG C, and body of heater internal gas pressure is 1500Pa (Ar gas), and growth time is 50 hours.Obtain growing silicon carbice crystals speed be 2.3 grams per hour.
Experiment 2.
Use the two section Heating tube (internal diameter is 160mm) of the utility model, as shown in Figure 1, the thickness of lower Heating tube is 8mm, is highly 130mm; Upper Heating tube wall thickness is 18mm, is highly 110mm, interval 10mm graphite felt between two Heating tubes.Keep test point temperature to be 2100 DEG C by temperature control, same setting reaction chamber internal gas pressure is 1500Pa (Ar gas), and growth time is 50 hours.Experimental result shows, the speed of growth of crystal be 3 grams per hour, relative experimental 1, crystalline growth velocity directly improves more than 20%.
The utility model, by carrying out structure design to growing silicon carbice crystals Heating tube, namely adopts two sections of heating element designs, realizes greatly improving raw material place temperature, and then improves the thermograde needed for crystal growth, achieve the object significantly improving crystalline growth velocity.Realize unit time crystalline growth velocity and improve more than 20%, easy handling also carries out industrialization production, significantly reduces production cost.
The utility model not only may be used for growing silicon carbice crystals, is also applicable to the crystalline material of other PVT methods growth, as aluminium nitride etc.
Above embodiment of the present utility model has been described in detail, but described content being only preferred embodiment of the present utility model, can not being considered to for limiting practical range of the present utility model.All equalizations done according to the utility model scope change and improve, and all should still belong within this patent covering scope.
Claims (5)
1. one kind is improved the Heating tube of crystalline growth velocity, comprise graphite cylinder body, it is characterized in that: the wall thickness of described cylindrical shell lower part and sic raw material corresponding part is thin, and the wall thickness of this part and plumbago crucible wall thickness sum are within skin effect thickness range, the wall thickness of described cylindrical shell upper part is greater than wall thickness 5mm to the 30mm of described cylindrical shell lower part.
2. the Heating tube of raising crystalline growth velocity according to claim 1, is characterized in that: described cylindrical shell is two sections formula structure, is provided with graphite felt between upper part and lower part.
3. the Heating tube of raising crystalline growth velocity according to claim 2, is characterized in that: the height of described graphite felt is 5-20mm.
4. the Heating tube of the raising crystalline growth velocity according to any one of claim 1-3, is characterized in that: the wall thickness of described cylindrical shell upper part is 15-30mm, and the wall thickness of described lower part is 5-15mm.
5. a crystal growing apparatus, comprises plumbago crucible and is sheathed on the Heating tube outside described plumbago crucible, it is characterized in that: described Heating tube adopts the Heating tube described in any one of claim 1-4.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420784395.4U CN204417638U (en) | 2014-12-11 | 2014-12-11 | Improve Heating tube and the crystal growing apparatus of crystalline growth velocity |
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| CN201420784395.4U CN204417638U (en) | 2014-12-11 | 2014-12-11 | Improve Heating tube and the crystal growing apparatus of crystalline growth velocity |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107955964A (en) * | 2017-12-18 | 2018-04-24 | 中国电子科技集团公司第四十六研究所 | The preparation method and its hot systems of a kind of MEMS hypoxemia silicon single crystal materials |
| CN108149324A (en) * | 2017-12-28 | 2018-06-12 | 北京华进创威电子有限公司 | A kind of novel aluminum nitride spontaneous nucleation growing method |
| CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
| CN109518276A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of high-quality silicon carbide crystal |
| WO2020087724A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Method for preparing high quality silicon carbide and device therefor |
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2014
- 2014-12-11 CN CN201420784395.4U patent/CN204417638U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107955964A (en) * | 2017-12-18 | 2018-04-24 | 中国电子科技集团公司第四十六研究所 | The preparation method and its hot systems of a kind of MEMS hypoxemia silicon single crystal materials |
| CN108149324A (en) * | 2017-12-28 | 2018-06-12 | 北京华进创威电子有限公司 | A kind of novel aluminum nitride spontaneous nucleation growing method |
| CN108149324B (en) * | 2017-12-28 | 2021-04-27 | 北京华进创威电子有限公司 | Aluminum nitride self-nucleation growth method |
| CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
| CN109280976B (en) * | 2018-10-16 | 2021-11-26 | 山东天岳先进科技股份有限公司 | Large-size high-purity silicon carbide single crystal, single crystal substrate and preparation method thereof |
| CN109518276A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of high-quality silicon carbide crystal |
| WO2020087724A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Method for preparing high quality silicon carbide and device therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Heating cylinder capable of improving growing speed of crystal and crystal growing device Effective date of registration: 20160826 Granted publication date: 20150624 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201207 Granted publication date: 20150624 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP03 | Change of name, title or address |
Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 room A007, 4th floor, block B, building 6, University Science Park, 5699 Second Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |
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| CP03 | Change of name, title or address |