CN204417638U - Improve Heating tube and the crystal growing apparatus of crystalline growth velocity - Google Patents
Improve Heating tube and the crystal growing apparatus of crystalline growth velocity Download PDFInfo
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- CN204417638U CN204417638U CN201420784395.4U CN201420784395U CN204417638U CN 204417638 U CN204417638 U CN 204417638U CN 201420784395 U CN201420784395 U CN 201420784395U CN 204417638 U CN204417638 U CN 204417638U
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107955964A (en) * | 2017-12-18 | 2018-04-24 | 中国电子科技集团公司第四十六研究所 | The preparation method and its hot systems of a kind of MEMS hypoxemia silicon single crystal materials |
CN108149324A (en) * | 2017-12-28 | 2018-06-12 | 北京华进创威电子有限公司 | A kind of novel aluminum nitride spontaneous nucleation growing method |
CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
CN109518276A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of high-quality silicon carbide crystal |
WO2020087724A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Method for preparing high quality silicon carbide and device therefor |
-
2014
- 2014-12-11 CN CN201420784395.4U patent/CN204417638U/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107955964A (en) * | 2017-12-18 | 2018-04-24 | 中国电子科技集团公司第四十六研究所 | The preparation method and its hot systems of a kind of MEMS hypoxemia silicon single crystal materials |
CN108149324A (en) * | 2017-12-28 | 2018-06-12 | 北京华进创威电子有限公司 | A kind of novel aluminum nitride spontaneous nucleation growing method |
CN108149324B (en) * | 2017-12-28 | 2021-04-27 | 北京华进创威电子有限公司 | Aluminum nitride self-nucleation growth method |
CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
CN109280976B (en) * | 2018-10-16 | 2021-11-26 | 山东天岳先进科技股份有限公司 | Large-size high-purity silicon carbide single crystal, single crystal substrate and preparation method thereof |
CN109518276A (en) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | A kind of preparation method and its device of high-quality silicon carbide crystal |
WO2020087724A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Method for preparing high quality silicon carbide and device therefor |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Heating cylinder capable of improving growing speed of crystal and crystal growing device Effective date of registration: 20160826 Granted publication date: 20150624 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201207 Granted publication date: 20150624 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address |
Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 room A007, 4th floor, block B, building 6, University Science Park, 5699 Second Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |
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CP03 | Change of name, title or address |