CN106637409A - Silicon carbide crystal growth device - Google Patents
Silicon carbide crystal growth device Download PDFInfo
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- CN106637409A CN106637409A CN201611155315.9A CN201611155315A CN106637409A CN 106637409 A CN106637409 A CN 106637409A CN 201611155315 A CN201611155315 A CN 201611155315A CN 106637409 A CN106637409 A CN 106637409A
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- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Crystallography & Structural Chemistry (AREA)
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- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon carbide crystal growth device, which comprises a vacuum cavity, a cavity heating device, a crucible apparatus, a crucible cover heating device and a control apparatus. The vacuum cavity comprises a vacuum chamber with an open end part and a sealing flange installed at the open end part in a sealing manner. The crucible apparatus is arranged in the vacuum cavity and comprises a crucible body with an open top end and a crucible cover covering the open top end in a sealing manner, wherein the crucible body is used for containing a silicon carbide material, and the bottom of the crucible cover is equipped with seed crystal. The control apparatus comprises a temperature collector used for collecting temperature data of the bottom of the crucible cover and a controller. The controller has many crystal reverse side temperature curves varying with the growth thickness of crystal stored inside, is used for receiving temperature data of the bottom of the crucible cover, wherein the temperature data is sent by the temperature collector, and controls the crucible cover heating device according to the temperature data to keep the temperature of the crucial cover to be same as the crystal reverse side temperature curves. The device allows high-quality crystal to grow.
Description
Technical field
The present invention relates to a kind of SiC Crystal Growth Equipment that carborundum crystals are grown for PVT methods.
Background technology
Carborundum (SiC) monocrystalline has that high thermal conductivity, high-breakdown-voltage, carrier mobility be high, chemical stability very
High excellent semiconductor physics, can be fabricated to high frequency, the high power electronic device worked under high temperature, intense radiation conditions
Part and opto-electronic device, have huge using value in national defence, high-tech, commercial production, power supply, field of power transformation, are counted as
The third generation semiconductor material with wide forbidden band of great development prospect.But, growth carborundum crystals are extremely difficult, exert through for many years
Power, now the laboratory with Gree companies of the U.S. as representative successfully with physical vapor transport (PVT) grow the height of major diameter
Quality silicon carbide silicon single crystal simultaneously makes epitaxial substrate, and with single-crystal silicon carbide epitaxial wafer the excellent electronics device of multiple performance has been succeeded in developing
Part and opto-electronic device.
As shown in figure 1, Fig. 1 is the structural representation of traditional SiC Crystal Growth Equipment, it includes vacuum chamber 7, sets
The attemperator 4 that is placed in the vacuum chamber 7, be arranged in the attemperator 4 the closed graphite crucible 1 with upper lid and to
Heater of the heating of vacuum chamber 7 etc..
When at present, using PVT technology growth carborundum crystals, in the bottom of graphite crucible 1 equipped with a certain amount of powdery or shape
Grained silicon carbide material 2, be spaced a distance in carbonization silicon material 2 top, a single-crystal silicon carbide piece is pasted onto as seed crystal 3
On the upper lid of graphite crucible, attemperator 4 surrounds the periphery and bottom for being arranged at graphite crucible 1.Portion is covered in the upper of graphite crucible 1
Technological requirement is provided with the appropriate thermal insulation element 5 of thickness that center is provided with thermometer hole 6, attemperator 4 and thermal insulation element 5 are common
Graphite crucible is set to form the temperature field of suitable growing silicon carbice crystals.Graphite crucible 1, the attemperator 4 etc. together with surrounding are all put
Put in a vacuum chamber 7 with isolated from atmosphere, during growth crystal, vacuum chamber 7 is evacuated to after the vacuum of technique needs, then
It is filled with the high-purity Ar gas of proper air pressure and makes air pressure be maintained at the scope of technique needs by gas pressure in vacuum automatic control system
It is interior.Graphite crucible 1 is set to reach the high temperature of needs and control automatically by temperature by the sensing heating of heater such as induction coil 8
System processed keeps the temperature at such as 2000 DEG C -2500 DEG C of the high temperature of technique needs, and the carbonization silicon material 2 in graphite crucible 1 is in high temperature
Saturated vapor is flashed to, is acted on by diffusion and gaseous exchange and is transported to the relatively low surface regelation of seed crystal 3 of temperature, forming core,
Crystallization, makes seed crystal 3 gradually grow up and forms a big crystal.
During PVT methods growth carborundum crystals, the structure of SiC Crystal Growth Equipment, such as shape of graphite crucible 1
The several factors such as shape and structure, induction coil frequency, heating power, attemperator, gas pressure in vacuum can all affect graphite crucible
Interior temperature distribution evenness, thus have significant impact to crystal growth and crystal mass, lot of domestic and international laboratory is asked with regard to this
Topic made numerous studies, delivered many articles about testing with computer simulation.Such as document 1：Self-congruent
process of SiC growth by physical vapor transport D.I.Cherednichenkoa,
R.V.Drachevb, T.S.Sudarshan Journal of Crystal Growth 262 (2004) 175-181, this is it
In an example.
As shown in Fig. 2 the hot-fluid and Temperature Distribution when Fig. 2 is the growth carborundum crystals in document 1 in graphite crucible
Mathematical model.Wherein Tc is crystal back temperature, and Ts is crystal plane (crystal front) temperature, and Tv is carborundum charge level temperature, and S is
Crystal growth thickness, Δ Tc is the temperature difference of crystal plane and the crystal back side, and d is distance of the crystal plane away from carbonization silicon material upper surface,
Δ Tv is the temperature difference between crystal plane and carbonization silicon material upper surface.ΔTGIt is the temperature of carbonization silicon material upper surface and the crystal back side
Difference, SRCFor the average height (representing carborundum doses size) of the silicon material that is carbonized, THIt is the temperature of heater, represents and carry out self-heating
The heat energy size of device.And QVAnd QWRepresent carbonization silicon material and heater by conduction of heat and radiant heat transfer to crystallization respectively
The heat in face.L represents the latent heat of crystal.Fi represents distillation steam transmission total amount, and V represents crystallization rate.
Wherein carborundum charge level and crystal plane temperature difference Δ Tv are the transmission power of distillation steam, its size and degree of stability
For crystallization process and quality play decisive role.Carborundum charge level Tv temperature is more stable, but crystal plane temperature Ts can be with
The crystallization increase of thickness rather than linearly increasing, causes temperature difference between two sides to reduce, and further results in crystallization rate V and reduces even
Stop growing.Unstable temperature difference and the speed of growth can cause various crystal defects to produce, it is difficult to grow high-quality crystalline substance
Body.
Above- mentioned information is only used for strengthening the understanding of background of this disclosure disclosed in background section, therefore it can be with
Including the information not constituted to prior art known to persons of ordinary skill in the art.
The content of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, there is provided one kind grows silicon carbide whisker for PVT methods
Body technology simultaneously can keep crystal structure face with the substantially invariable SiC Crystal Growth Equipment of carbonization silicon material upper surface temperature difference.
According to an aspect of the present invention, a kind of SiC Crystal Growth Equipment, including vacuum chamber, chamber add hot charging
Put, crucible device, crucible cover heater and control device.Wherein vacuum chamber include the vacuum cavity with open end and
It is seal-installed on the sealing flange of the open end；Chamber heater is used to give vacuum chamber heating；Crucible device
Be arranged in the vacuum chamber, including the crucible body with top end opening and closure the top end opening crucible
Lid, the crucible body is used to contain carbonization silicon material, and the crucible cover bottom is provided with a seed crystal, and it is brilliant that the seed crystal can grow into one
Body；Crucible cover heater is used to heat the crucible cover；Control device includes Temperature sampler and controller, Temperature sampler
For gathering the temperature data of the crucible cover bottom；Controller storage inside has a plurality of with the crystalline substance of crystal growth thickness change
Body back temperature curve, the controller is used to receive the crucible cover bottom temp data that the Temperature sampler sends,
And the crucible cover heater is controlled according to this, so that the crucible cover temperature keeps one with the crystal back temperature curve
Cause.
As shown from the above technical solution, advantages of the present invention and Advantageous Effects are：Carborundum crystals life of the present invention
Long equipment includes the crucible cover heater and control device for heating the crucible cover, and control device includes adopting in real time
The Temperature sampler and controller of collection crucible cover bottom temp data, control device can be according to crucible cover bottom temp Data Control
The crucible cover heater is consistent by the preferable crystal back temperature curve of a setting, so that crystal structure face
With carbonization silicon material upper surface temperature difference substantially constant, and then make the speed of growth of crystal keep stable, significantly improve growth
The crystal mass for going out.
By description of a preferred embodiment referring to the drawings in the present invention, above-mentioned and other purposes of the present invention,
Feature and advantage will be apparent from.
Description of the drawings
Fig. 1 is the structural representation of traditional SiC Crystal Growth Equipment；
Fig. 2 is the mathematical model of hot-fluid when growing carborundum crystals in graphite crucible and Temperature Distribution；
Fig. 3 is the schematic diagram of the embodiment of SiC Crystal Growth Equipment of the present invention；
Fig. 4 is the partial enlarged drawing of Fig. 3；
Fig. 5 is the crystal back temperature curve chart that Virtual Reactor simulation softwards system is obtained；
Fig. 6 be Fig. 3 shown in SiC Crystal Growth Equipment in control device control principle drawing.
In figure：9th, crucible body；10th, be carbonized silicon material；12nd, attemperator；13rd, helical load coil；14th, vacuum chamber
Body；15th, cylinder bottom；16th, cylinder；17th, thermode is added；18th, infrared radiation thermometer；19th, thermometric interface；20th, cooling water pipe；21st, it is vortexed
Load coil；22nd, seed crystal；23rd, crystal；24th, sealing flange；28th, the crystal back side；30th, crystal plane；31st, through hole；35th, stone
Mo Tuo.
Specific embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with various shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；Conversely, thesing embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment those skilled in the art is comprehensively conveyed to.Identical accompanying drawing in figure
Labelling represents same or similar structure, thus will omit their detailed description.
It is the schematic diagram of the embodiment of SiC Crystal Growth Equipment of the present invention referring to Fig. 3 and Fig. 4, Fig. 3；Fig. 4 is Fig. 3
Partial enlarged drawing.As shown in Figure 3 and Figure 4, the embodiment of SiC Crystal Growth Equipment of the present invention includes vacuum chamber, chamber
Room heater, crucible device, crucible cover heater and control device.
Vacuum chamber can be surrounded by the vacuum cavity 14 with open end and sealing flange 24.Sealing flange 24 can be with
The firm connection with the upper surface of vacuum cavity 14 is realized by screw or clip.Preferably, sealing flange 24 can pass through resistance to height
Warm screw is for example seal-installed on the open end of vacuum cavity 14 with graphite screws made by high purity graphite material.When using by
Vacuum chamber is evacuated to vaccum-pumping equipment the vacuum needed for technique, and such as 3 × 10-4Pa。
Chamber heater is used for heating, vacuum chamber, and it can be arranged around vacuum chamber outside, chamber heater
It can be helical load coil 13 etc..
Crucible device is arranged in vacuum chamber, and it includes the crucible body 9 with top end opening and closure on top
The crucible cover of opening.Crucible body 9 is used to contain carbonization silicon material 10, and crucible cover lower surface is pasted with a seed crystal 22, using PVT skills
Art grows carborundum craft, and the seed crystal 22 can grow into a crystal 23.
In the first embodiment, crucible cover is cylindrical, and with cylinder bottom 15 and cylinder 16, cylinder bottom 15 can be thickness
For the thick Thin Disks of 3mm to 5mm, to reduce thermal resistance, facilitate the precise control of temperature.Crucible cover heater can be arranged at cylinder
In body 16 and neighbouring cylinder bottom 15.The bottom periphery of cylinder 16 of crucible cover is provided with cannelure, the cannelure have side seals and
End sealing, the side seals and end sealing distinguish corresponding matching in the medial surface and top end face of crucible body 9.Such side
Face improves the sealing property of crucible device, and a bottom 15 on the other hand can be caused to stretch in cylinder 16, is more beneficial for holding cylinder
Bottom 15 is constant, is easy to the precise control of temperature.
It should be appreciated that the structure of crucible cover is not limited to concrete structure shape exemplified above in the crucible device of the present invention
Formula, the crucible cover of other structures form, such as one flat crucible cover etc. can be applicable to the present invention.
Crucible cover heater is used for heating crucible lid, so that the seed crystal 22 for being arranged at crucible cover grows into the mistake of crystal 23
Cheng Zhong, the crystal plane 30 (see Fig. 4) on the surface of crystal 23 can keep suitable temperature.Can between crucible cover heater and crucible cover
With directly contact, it is also possible to keep a gap, when crucible cover is tabular, the gap can be tabular crucible cap upper surface
The distance between with crucible cover heater lower surface；When crucible cover is cylindrical in shape, the gap can be the upper surface at a bottom 15
The distance between with crucible cover heater lower surface.
Selectively, crucible cover heater can be a vortex load coil 21, vortex load coil 21
Upper connection plus thermode 17.Now, the gap of 8-15mm can be kept between vortex load coil 21 and crucible cover, specifically
Can be true according to the factor such as the heating-up temperature of crucible cover heater and efficiency, crucible cover thickness, crucible cover size, crucible cover material
It is fixed, such as 8.5mm, 10.4mm, 11mm, 12.6mm, 13.5mm, 14.2mm, etc..
Preferably, vortex load coil 21 can be fixed on sealing flange 24 by adding thermode 17.Plus thermoelectricity
Pole 17 can be connected on the outermost layer coil of vortex load coil 21, plus thermode 17 can be two, 4 etc..
Further, the cross section of vortex load coil 21 is in hollow rectangular shape, to avoid or reduce annulus
The impact of effect and kelvin effect.Further, the both ends of vortex load coil 21 are also respectively by pipe joint (figure
Not shown in) one cooling water pipe 20 of connection, when the temperature at crucible bottom such as cylinder bottom 15 is too high, can be passed through to cooling water pipe 20
Cooling water is cooled down.The cooling water pipe 20 can be connected to the outermost layer coil of vortex load coil 21, certainly this
It is bright to be not limited to this, cooling water pipe 20 be connected to the innermost layer coil or intermediate layer coil of vortex load coil 21 be can
Capable.
In some embodiments, SiC Crystal Growth Equipment also includes that one is arranged at the attemperator in vacuum chamber
12, attemperator 12 can surround crucible body 9 and part crucible cover.Attemperator 12 can be graphite felt etc..Further
Ground, SiC Crystal Growth Equipment also includes a support member such as graphite support 35, and graphite support 35 is fixed on the bottom of attemperator 12
Central authorities, make attemperator 12 keep a spacing with the bottom of vacuum cavity 14.
In the present invention, crucible device can be arranged at vacuum chamber middle position, i.e., the two is coaxially arranged, further,
Attemperator 12, chamber heater, graphite support 35 are coaxially arranged with crucible device.
Referring to Fig. 6, Fig. 6 is the control principle drawing of control device in SiC Crystal Growth Equipment shown in Fig. 3.Such as Fig. 6
Shown, present invention additionally comprises the control device of crystal plane temperature can be controlled, it includes Temperature sampler and controller.Wherein temperature
Harvester is used to gather the temperature data at crucible cover bottom such as cylinder bottom 15, and the temperature data is sent to into controller.
In one embodiment, Temperature sampler adopts infrared radiation thermometer 18, in such cases, needs in sealing flange 24
Middle position thermometric interface 19 is set, crucible cover heater is being provided with through hole 31 corresponding to the position of thermometric interface 19, works as earthenware
When crucible lid heater adopts vortex load coil 21, coil layer can be not provided with so as to reserve hollow space in centre
Form the through hole 31.So infrared radiation thermometer 18 can measure crucible cover bottom temp with hindering without any.Certainly other
The Temperature sampler example of species also apply be applicable to the present invention.
Controller storage inside has a plurality of crystal back temperature curve changed with the growth thickness of crystal 23, and controller is used
In the crucible cover bottom temp data that real-time reception Temperature sampler sends, and crucible cover heater is controlled according to this, so that earthenware
Crucible lid temperature is consistent with crystal back temperature curve.In some embodiments, controller can adopt PID controller.
Referring to Fig. 3 and combine Fig. 2, the temperature of crystal plane 30 of crystal 23 is expressed as Ts, carbonization silicon material 10 temperature is Tv, crystal
The temperature at the back side 28 is Tc, and in the present embodiment Tv is heated by helical load coil 13 and had fixed value.The knot of crystal
The Δ Tc of the temperature difference correspondence Fig. 2 between crystal face (front) 30 and the crystal back side 28, between crystal plane 30 and carbonization silicon material 10
The Δ Tv of temperature difference correspondence Fig. 2.Fig. 2 describe PVT methods growth carborundum crystals when by the hot-fluid Q=Qv+Qw+ of crystal plane
L, crystal crystal plane 30 and the crystal back side 28 define temperature difference Tc=Ts-Tc.The temperature of carbonization silicon material 10 and crystal plane 30
Difference Δ Tv=Tv-Ts.Thus draw：Δ Tv=Tv- (Tc+ Δ Tc), thermal conduction study is given, Δ Tc=Q*Rc, wherein, Rc is crystal
Thermal resistance.As the thickness of crystal increases, then Rc increases, are increased by Δ Tc, if to keep Δ Tv constant, are only reduced
Tc。
Wherein, crystal back temperature curve can be simulated by existing special SiC growth simulations software and drawn, such as document
《SiC single crystal growth and its progress of Wafer Machining》(Jiang Shouzhen, quasiconductor journal the 5th phase of volume 28) or document《Earthenware
Crucible in coil position to great diameter SiC monocrystal Influence of Temperature Field》(many of Wang Yingming, electronics manufacturing engineering the 6th phase of volume 32 etc.
The Virtual Reactor simulation softwards system acquisition that paper is previously mentioned and uses.
It is the crystal back side that Virtual Reactor simulation softwards system is obtained referring to Fig. 5 and with reference to Fig. 2 and Fig. 4, Fig. 5
Temperature profile.As shown in figure 5, in temperature TH=2610K (Kelvin) of helical load coil 13, the silicon material 10 that is carbonized
Temperature TV=2600K, vacuum cavity pressure PAr=5mBar, under the operating mode of seed crystal diameter d0=5cm, with crystal growth thickness
Increase, the change curve of crystal plane temperature Tc of crystal, wherein curve 1, curve 2, curve 3 represent respectively crystalline rate V=
1mm/h (millimeter is per hour), V=2mm/h, during V=3mm/h Tc with crystal growth thickness Changing Pattern.As can be seen here, one
Under fixed growth conditionss, when the curve (such as curve 1) shown in temperature following Fig. 3 of Tc is reduced, Δ Tv can be caused constant.
When using, helical load coil 13 is powered, and vacuum chamber is heated, and heat is by conduction of heat and heat radiation side
Carbonization silicon material 10 is heated to 2600 DEG C by formula Jing vacuum cavity 14, attemperator 12, crucible body 9, and be now carbonized 10 liters of silicon material
China, sublimation gases are transported at the back side 28 under the upper surface 29 of carbonization silicon material 10 and the temperature difference effect at the back side 28 of seed crystal 22,
And react again, condensing, forming core is grown to carborundum (SiC) crystal 23, while the aufwuchsplate for forming crystal 23 is crystal plane 30.
By the present invention in that temperature Tc at the back side 28 of crystal 23 is by given curvilinear motion, you can so that the knot of carbonization silicon material 10 and crystal
The temperature difference Tv=Tv-Ts Tv- (Tc+ Δ Tc) of crystal face 30 keeps constant, so that crystal 23 has stable crystalline growth
Speed, can grow high-quality SiC crystalline solid.
The present invention controls crystal back temperature by arranging vortex load coil 21 in crucible cover by control device
Degree Tc is consistent with crystal back temperature (equivalent to theory T c, as shown in Figure 5) ideally, is capable of achieving with crystal growth
Baidu thickens, the increase of crystal heat transfer resistance, the Δ Tc increases between crystal back and crystal structure face, and crystal structure face and carbon
The purpose that the poor Δ Tv of SiClx material upper surface temperature is held essentially constant.So as to realize stable rate of crystalline growth, pledge is grown
The high crystal of amount.
Although the term of relative property used in this specification, for example " on " D score to be describing a component of icon for another
The relativeness of one component, but these terms are used in this specification merely for convenient, for example with reference to the accompanying drawings in example
Direction.Be appreciated that, if making it turn upside down the upset of the device of icon, describe " on " component will become
In the component of D score.When certain structure other structures " on " when, it is possible to refer to that certain structural integrity is formed in other structures, or
Refer to that certain structure " direct " is arranged in other structures, or refer to that certain structure is arranged in other structures by another structure " indirect ".
Term " first ", " second " etc. are only used as labelling, are not that the quantity to its object is limited.
In the claims, one or more will to represent presence for term " one ", " one ", " " and " at least one "
Element/ingredient/etc.；Term "comprising", " comprising " and " having " are to represent the open meaning being included and be
Also there may be in addition to referring to the key element/ingredient/wait except listing other key element/ingredient/etc..
It should be appreciated that the present invention is not limited in its application to the detailed construction and arrangement of the part of this specification proposition
Mode.The present invention can have other embodiment, and can in many ways realize and perform.Aforesaid deformation form and
Modification falls within the scope of the present invention.It should be appreciated that this disclosure and the present invention for limiting are extended in text
And/or mention in accompanying drawing or the significantly all alternative combination of two or more independent features.It is all these different
Combination constitutes the multiple alternative aspect of the present invention.The embodiment of this specification illustrates to become known for realizing the present invention most
Good mode, and those skilled in the art will be enable using the present invention.
Claims (10)
1. a kind of SiC Crystal Growth Equipment, it is characterised in that include：
Vacuum chamber, including the vacuum cavity with open end and the sealing flange for being seal-installed on the open end；
Chamber heater, for giving vacuum chamber heating；
Crucible device, is arranged in the vacuum chamber, including the crucible body with top end opening and closure on the top
The crucible cover of end opening, the crucible body is used to contain carbonization silicon material, and the crucible cover bottom is provided with a seed crystal, the seed crystal energy
Grow into a crystal；
Crucible cover heater, for heating the crucible cover；
Control device, including：
Temperature sampler, for gathering the temperature data of the crucible cover bottom；
Controller, its storage inside has a plurality of with the crystal back temperature curve of crystal growth thickness change, the controller
For receiving the crucible cover bottom temp data that the Temperature sampler sends, and the crucible cover plus hot charging are controlled according to this
Put, so that the crucible cover temperature is consistent with the crystal back temperature curve.
2. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the crucible cover is cylindrical in shape, with cylinder bottom and
Cylinder, the crucible cover heater is arranged in the cylinder and the neighbouring or contact cylinder bottom.
3. SiC Crystal Growth Equipment as claimed in claim 2, it is characterised in that the thickness at the cylinder bottom of the crucible cover is 3mm-
5mm。
4. SiC Crystal Growth Equipment as claimed in claim 2, it is characterised in that the end with the cylinder bottom of the cylinder
Periphery is provided with cannelure, and the cannelure has side seals and end sealing, the medial surface and top end face point of the crucible body
Other corresponding matching is in the side seals and end sealing.
5. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the crucible cover heater is the sensing that is vortexed
Heating coil, the gap between the crucible cover heater and the crucible cover is 8-15mm.
6. SiC Crystal Growth Equipment as claimed in claim 5, it is characterised in that on the vortex load coil connection plus
Thermode, and be fixed on the sealing flange by described plus thermode.
7. SiC Crystal Growth Equipment as claimed in claim 5, it is characterised in that the cross section of the vortex load coil
In hollow rectangular shape.
8. SiC Crystal Growth Equipment as claimed in claim 7, it is characterised in that the both ends of the vortex load coil
Connect a cooling water pipe respectively.
9. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the Temperature sampler is infrared radiation thermometer,
The sealing flange is provided with thermometer hole, and the crucible cover heater is being provided with through hole corresponding to the thermometric hole site.
10. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that also include：
Attemperator, is arranged in the vacuum chamber, and surrounds the crucible body and part crucible cover.
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| CN112481700A (en) * | 2020-11-11 | 2021-03-12 | 山东天岳先进科技股份有限公司 | Crystal growth assembly for preparing single crystal by PVT method and method for preparing single crystal |
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| CN116607216A (en) * | 2023-07-20 | 2023-08-18 | 苏州优晶光电科技有限公司 | Method and system for adjusting internal temperature field of resistance silicon carbide growth furnace and growth method |
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| CN111621844A (en) * | 2020-06-22 | 2020-09-04 | 哈尔滨化兴软控科技有限公司 | Rotary type double-temperature-zone PVT method high-quality single crystal preparation device and method |
| CN112064110A (en) * | 2020-10-16 | 2020-12-11 | 璨隆科技发展有限公司 | Temperature control device for growth of silicon carbide crystal |
| CN112481700A (en) * | 2020-11-11 | 2021-03-12 | 山东天岳先进科技股份有限公司 | Crystal growth assembly for preparing single crystal by PVT method and method for preparing single crystal |
| CN113106540A (en) * | 2021-03-08 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN113106540B (en) * | 2021-03-08 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN116607216A (en) * | 2023-07-20 | 2023-08-18 | 苏州优晶光电科技有限公司 | Method and system for adjusting internal temperature field of resistance silicon carbide growth furnace and growth method |
| CN116607216B (en) * | 2023-07-20 | 2023-10-13 | 苏州优晶光电科技有限公司 | Method and system for adjusting internal temperature field of resistance silicon carbide growth furnace and growth method |
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