CN111945218B - Height control system and method for crucible high-temperature line and growth furnace - Google Patents
Height control system and method for crucible high-temperature line and growth furnace Download PDFInfo
- Publication number
- CN111945218B CN111945218B CN201910414175.XA CN201910414175A CN111945218B CN 111945218 B CN111945218 B CN 111945218B CN 201910414175 A CN201910414175 A CN 201910414175A CN 111945218 B CN111945218 B CN 111945218B
- Authority
- CN
- China
- Prior art keywords
- crucible
- height value
- temperature line
- actual
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a height control system and method of a crucible high-temperature line and a growth furnace, wherein the system comprises a temperature acquisition unit, a control unit and an execution unit, wherein the temperature acquisition unit is used for acquiring actual temperatures corresponding to different heights of a crucible and sending the actual temperatures to the control unit; the control unit is used for obtaining an actual height value of a crucible high-temperature line based on corresponding actual temperatures at different heights of the crucible and comparing the actual height value with a preset position height value of the crucible high-temperature line; the execution unit enables the crucible and the induction coil surrounding the crucible to perform relative lifting movement according to the comparison result of the control unit, so that the actual height value is consistent with the preset position height value. The height control system of the crucible high-temperature line provided by the invention can obtain the accurate position of the crucible high-temperature line in real time, and can realize closed-loop control of the position of the crucible high-temperature line, thereby improving the accuracy and reliability of the process.
Description
Technical Field
The invention relates to the technical field of growth furnaces, in particular to a height control system and method of a crucible high-temperature line and a growth furnace.
Background
Physical Vapor Transport (PVT) is one of the mainstream methods for producing silicon carbide crystals. As shown in fig. 1, the specific process of growing SiC single crystal by PVT method is: generally, the SiC crystal 1 is placed at the top of the graphite crucible 2 as a seed crystal, the SiC powder 3 is placed at the bottom of the graphite crucible 2 as a material source, the graphite crucible 2 is inductively heated by the induction coil 4, and the temperature inside the crucible reaches about 2300 ℃, so that the crystal growth is realized. In addition, cooling water is introduced into the gap between the outer quartz tube 5 and the inner quartz tube 6 to perform a cooling function. In the process of crystal growth, the temperature of the seed crystal 1 is lower, the temperature of the material source 3 is higher, and a certain temperature gradient exists between the seed crystal and the material source. During the crystal growth process, the material source 3 is sublimated and crystallized on the seed crystal at the cold end, and the SiC body single crystal is obtained.
In the crystal growth process, since the current distribution generated by the eddy current effect is different on the surface of the graphite crucible 2 when the relative position of the induction coil 4 and the graphite crucible 2 is different, the temperature field distributed in the height direction of the graphite crucible 2 is different, and the height line corresponding to the highest temperature of the graphite crucible 2 in the height direction is generally set as the crucible high temperature line 8. The graphite crucible high temperature line 8 is one of the important parameters influencing the SIC crystal convexity. At present, the middle position of the induction coil 4 in the axial direction thereof is defaulted to the position of the crucible high temperature line 8, and the SIC growth speed approximation value is regarded as the crucible lifting speed. With the process time being prolonged, the SIC raw material is continuously sublimated, and the position of the crucible high-temperature wire 8 needs to be adjusted by adjusting the relative position of the graphite crucible 2 and the induction coil 4 in real time so as to ensure that the crystal convexity obtained by the process growth meets the standard.
However, in the crystal growth process, due to the lack of real-time monitoring data, the prior art completely depends on theoretical values to estimate and adjust the height of the crucible high-temperature line 8, namely open-loop control, and the control mode has poor accuracy and low precision and influences the control of the whole process parameters.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a crucible high-temperature line height control system, a crucible high-temperature line height control method and a growth furnace, which can obtain the accurate position of a crucible high-temperature line in real time and can realize closed-loop control of the position of the crucible high-temperature line, thereby improving the process accuracy and reliability.
In order to achieve the above object, the present invention provides a height control system of a crucible high temperature line, comprising a temperature acquisition unit, a control unit and an execution unit, wherein,
the temperature acquisition unit is used for acquiring actual temperatures corresponding to different heights of the crucible and sending the actual temperatures to the control unit;
the control unit is used for obtaining an actual height value of a crucible high-temperature line based on corresponding actual temperatures at different heights of the crucible and comparing the actual height value with a preset position height value of the crucible high-temperature line;
and the execution unit enables the crucible and the induction coil surrounding the crucible to perform relative lifting motion according to the comparison result of the control unit, so that the actual height value is consistent with the preset position height value.
Optionally, the temperature acquisition unit includes an infrared imager, and the infrared imager is used for acquiring thermal image data containing actual temperatures corresponding to different heights of the crucible, and sending the thermal image data to the control unit.
Optionally, the execution unit includes a driving device for driving the crucible or the induction coil to move up and down.
Optionally, the execution unit is configured to drive the crucible to perform a lifting motion; the height control system also comprises a position detection unit, wherein the position detection unit is used for detecting the actual height value of a preset monitoring point on the crucible and sending the actual height value to the control unit;
the control unit is also used for calculating and obtaining a preset position height value of the crucible high-temperature line according to the following formula;
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line; j is the actual height value of a preset monitoring point on the crucible; Δ h is a preset distance value.
Optionally, the preset monitoring point is located at the bottom of the crucible.
As another technical scheme, the invention also provides a growth furnace, which comprises a furnace body, a crucible arranged in the furnace body, an induction coil arranged around the furnace body, and a height control system of the crucible high-temperature line provided by the invention.
Optionally, the temperature acquisition unit includes an infrared imager, and the infrared imager is configured to acquire thermal image data including actual temperatures corresponding to different heights of the crucible, and send the thermal image data to the control unit;
the growth furnace also comprises an observation window arranged on the side wall of the furnace body, and the infrared imager is arranged at the position outside the furnace body corresponding to the observation window.
Optionally, the furnace body comprises an inner quartz tube and an outer quartz tube sleeved outside the inner quartz tube at intervals, and cooling water is filled in the intervals between the inner quartz tube and the outer quartz tube; and the observation window is arranged in the pipe walls of the inner quartz pipe and the outer quartz pipe in a penetrating way, and a sealing structure is arranged around the observation window and used for isolating the observation window from the cooling water.
As another technical solution, the present invention also provides a method for controlling a height of a high temperature line of a crucible, which is used in a process of using a growth furnace to perform a process, and includes:
collecting actual temperatures corresponding to different heights of the crucible;
obtaining actual height values of a crucible high temperature line based on corresponding actual temperatures at different heights of the crucible, and comparing the actual height values with preset position height values of the crucible high temperature line;
and enabling the crucible and the induction coil surrounding the crucible to perform relative lifting motion according to the comparison result so as to enable the actual height value to be consistent with the preset position height value.
As another technical solution, the present invention further provides a method for obtaining a preset position height value of a crucible high temperature line in the step of obtaining an actual height value of the crucible high temperature line based on actual temperatures corresponding to different heights of the crucible and comparing the actual height value with the preset position height value of the crucible high temperature line, the method comprising:
detecting the actual height value of a preset monitoring point on the crucible;
calculating and obtaining a preset position height value of the crucible high temperature line according to the following formula;
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line; j is the actual height value of a preset monitoring point on the crucible; Δ h is a preset distance value;
and in the step of enabling the crucible and the induction coil surrounding the crucible to perform relative lifting movement according to the comparison result so as to enable the actual height value to be consistent with the preset position height value, driving the crucible to perform lifting movement.
Optionally, the preset monitoring point is located at the bottom of the crucible.
The invention has the beneficial effects that:
according to the height control system and method for the high-temperature line of the crucible and the technical scheme of the growth furnace, the actual temperatures corresponding to different heights of the crucible are collected by the temperature collection unit in the process of carrying out the process of the growth furnace, so that the accurate position of the high-temperature line of the crucible can be obtained in real time, meanwhile, the actual height value of the high-temperature line of the crucible is obtained by the control unit based on the actual temperatures corresponding to different heights of the crucible, the actual height value is compared with the preset position height value of the high-temperature line of the crucible, the crucible and the induction coil surrounding the periphery of the crucible are relatively moved up and down by the execution unit according to the comparison result, the actual height value of the high-temperature line of the crucible can be consistent with the preset position height value, namely, closed-loop control of the position of the high-temperature line of the crucible is realized, and the accuracy and the reliability of the process can be improved.
Drawings
FIG. 1 is a sectional view of a conventional growth furnace;
FIG. 2 is a sectional view of a growth furnace according to an embodiment of the present invention;
FIG. 3 is a schematic block diagram of a crucible high temperature line height control system according to an embodiment of the present invention;
FIG. 4 is a graph of the height of the high temperature line of the crucible versus temperature for an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the height control system and method for crucible high temperature line, and the growth furnace provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 2 and 3 together, in the present embodiment, the growth furnace 100 includes a furnace body, a crucible 11 disposed in the furnace body, an induction coil 14 disposed around the furnace body, and a height control system of a crucible high temperature line. The furnace body comprises an inner quartz tube 12 and an outer quartz tube 13 which is sleeved outside the inner quartz tube 12 at intervals, and cooling water is filled in the intervals between the inner quartz tube 12 and the outer quartz tube 13 and used for cooling the quartz tubes.
The height control system of the crucible high temperature line comprises a temperature acquisition unit 16, a control unit 19 and an execution unit 20, wherein the temperature acquisition unit 16 is used for acquiring actual temperatures corresponding to different heights of the crucible 11 in the process of carrying out the process in the growth furnace 100 and sending the actual temperatures to the control unit 19. By means of the temperature collection unit 16, the temperature distribution of the crucible 11 in the height direction thereof can be accurately detected, so that the accurate position of the crucible high temperature line 15 can be obtained. The crucible high temperature line 15 is a height at which the highest temperature of the crucible 11 in the height direction thereof is located. In the crucible process, along with the continuous sublimation of the source material contained in the crucible, the corresponding position of the crucible high-temperature line 15 in the height direction of the crucible needs to be continuously adjusted according to the situation, and herein, the height of the corresponding position of the crucible high-temperature line 15 expected in the height direction of the crucible is referred to as the preset position height value of the crucible high-temperature line 15.
Optionally, the temperature acquisition unit 16 comprises an infrared imager for acquiring thermal image data containing the actual temperatures corresponding to different heights of the crucible and sending the thermal image data to the control unit 19. The infrared imager can accurately acquire the temperature distribution curve of the crucible 11 in the height direction thereof, so that the accurate position of the crucible high temperature line 15 can be obtained.
Preferably, thermal image data may be acquired within a preset height range of the crucible 11, which is set to not lower than the bottom height of the crucible 11 but not higher than the top height of the crucible 11, or the top height of the furnace body of the growth furnace 100. In this way, it can be ensured that the temperature distribution range collected by the temperature collection unit 16 covers all positions of the crucible 11 in the height direction thereof.
The control unit 19 is configured to obtain an actual height value of the crucible high temperature line 15 based on actual temperatures corresponding to different heights of the crucible 11, and compare the actual height value with a preset position height value of the crucible high temperature line 15, specifically, obtain a temperature distribution curve of the crucible 11 in a height direction thereof by using the temperature acquisition unit 16, and obtain the actual height value of the crucible high temperature line 15 by using a corresponding relationship between the temperature value and the height value; then, the control unit 19 compares the actual height value with the acquired preset position height value of the crucible high temperature line 15, and if there is a difference between the actual height value and the preset position height value, the current height of the crucible high temperature line 15 needs to be adjusted until the actual height value of the crucible high temperature line 15 is consistent with the preset position height value.
The execution unit 20 makes the crucible 11 and the induction coil 14 perform relative lifting movement according to the comparison result of the control unit 19, so that the actual height value is consistent with the preset position height value. In the embodiment, the actuating unit 20 comprises a driving device 18 for driving the crucible 11 to move up and down, and the crucible 11 and the induction coil 14 generate relative up and down movement under the driving of the driving device 18, so that the current height of the crucible high temperature line 15 can be adjusted. The driving device 18 includes a lifting motor, a lifting cylinder, a lifting hydraulic cylinder, or the like.
Of course, in practical applications, the relative lifting movement between the crucible 11 and the induction coil 14 can also be realized by driving the induction coil 14 to move up and down, while the crucible 11 is fixed.
In this embodiment, if the driving device 18 drives the crucible 11 to move up and down, optionally, the height control system further comprises a position detecting unit for detecting an actual height value of a preset monitoring point on the crucible 11 and sending the actual height value to the control unit 19. Alternatively, the position detection unit is an encoder 21 connected to the drive device 18. On the basis, the control unit 19 can calculate the height value of the preset position of the crucible high temperature line 15 according to the actual height value of the preset monitoring point on the crucible 11, and specifically can calculate according to the following formula:
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line 15; j is the actual height value of a preset monitoring point on the crucible 11, and preferably, the preset monitoring point is positioned at the bottom of the crucible 11; Δ h is a preset distance value, which may be a distance value between a point on the crucible 11 above or below a preset monitoring point and the preset monitoring point, and the size of Δ h may be freely set according to the process requirements.
By means of the position detection unit, the actual height of the crucible 11 can be accurately obtained to realize closed-loop control of the elevating movement of the crucible 11, so that accuracy and reliability can be improved. It is easy to understand that if the driving device is used to drive the induction coil 14 to move up and down, the position detecting unit is used to detect the bottom height of the induction coil 14.
In summary, the height control system for the crucible high temperature line provided by the embodiment can realize the closed-loop control of the position of the crucible high temperature line, so that the process accuracy and reliability can be improved.
As another technical solution, the growth furnace 100 provided in this embodiment may be used for growing SiC single crystal by PVT method, for example, and further includes an observation window 17 provided in a side wall of the furnace body, and the temperature acquisition unit 16 includes an infrared imager provided at a position outside the furnace body corresponding to the observation window 17 for emitting a detection signal to the crucible 11 through the observation window 17.
Preferably, the observation window 17 is inserted into the tube wall of the inner quartz tube 12 and the outer quartz tube 13, and a sealing structure (not shown) is disposed around the observation window 17 to isolate the observation window 17 from the cooling water, so that the cooling water can be prevented from affecting the detection accuracy. Alternatively, the sealing structure may be a box body, a waterproof material, or the like, capable of isolating the observation window 17 from the cooling water.
The growth furnace 100 provided by this embodiment can obtain the accurate position of the crucible high temperature line in real time by using the above-mentioned height control system of the crucible high temperature line provided by this embodiment, and can realize the closed-loop control of the position of the crucible high temperature line, thereby improving the accuracy and reliability of the process.
As another technical solution, this embodiment further provides a method for controlling the height of the crucible high temperature line, which can control the height of the crucible high temperature line 15 by using the above-mentioned system for controlling the height of the crucible high temperature line provided in this embodiment during the process using the growth furnace. Referring to fig. 2 to 4, the method includes:
step 101, acquiring actual temperatures corresponding to different heights of the crucible 11;
the temperature distribution of the crucible 11 in the height direction thereof can be accurately detected by means of the temperature collection unit 16, so that the accurate position of the crucible high temperature line 15 can be obtained.
102, obtaining an actual height value of a crucible high temperature line based on corresponding actual temperatures at different heights of the crucible 11, and comparing the actual height value with a preset position height value of the crucible high temperature line;
and 103, relatively lifting the crucible 11 and the induction coil 14 according to the comparison result so as to enable the actual height value to be consistent with the preset position height value.
Referring to fig. 4, in the step 102, the method for obtaining the height value of the predetermined position of the crucible high temperature line 15 includes:
detecting the actual height value of a preset monitoring point on the crucible 11;
calculating to obtain a preset position height value of the crucible high temperature line 15 according to the following formula;
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line 15; j is the actual height value of a preset monitoring point on the crucible 11; optionally, the preset monitoring point is located at the bottom 11a of the crucible 11; Δ h is a preset distance value.
In fig. 4, the Y-axis represents the height of the crucible 11; the X-axis is the temperature of the crucible 11.
In the above step 102, the difference (H-J1) between the actual height value H of the crucible high temperature line 15 and the preset position height value J1 is calculated, and it is judged whether the difference (H-J1) is larger than 0 or smaller than 0.
In step 103, if the difference (H-J1) is greater than 0, the crucible 11 is raised relative to the induction coil 14 by a distance equal to the difference, so that the actual height of the crucible high temperature line 15 is consistent with the preset position height.
If the difference (H-J1) is less than 0, the crucible 11 is lowered relative to the induction coil 14 by a distance equal to the difference so that the actual height of the crucible hot line 15 coincides with the preset position height.
Optionally, before the process starts, a height value corresponding to the center line of the induction coil 14 in the height direction is used as an initial height value of the crucible high temperature line 15, for example, a height position on the crucible, which is about 10mm to 20mm away from the bottom of the crucible, is used as an initial preset position of the crucible high temperature line 15, and a height position corresponding to the center line of the induction coil 14 in the height direction is used as an initial actual position of the crucible high temperature line 15. Before the process starts, the initial preset position is adjusted to be consistent with the initial actual position. The height control system and the height control method in the embodiment are adopted in the process to carry out real-time accurate adjustment.
It should be noted that, in practical applications, the induction coil 14 may also be driven to move up and down, in which case, the height of the bottom of the induction coil 14 may be detected to obtain the preset position height of the crucible high temperature line 15.
In the method for controlling the height of the crucible high-temperature line provided by the embodiment, in the process of performing the process on the growth furnace 100, the actual temperatures corresponding to different heights of the crucible 11 are collected, so that the accurate position of the crucible high-temperature line 15 can be obtained in real time, meanwhile, the actual height value of the crucible high-temperature line 15 is obtained based on the actual temperatures corresponding to different heights of the crucible 11, the actual height value is compared with the preset position height value of the crucible high-temperature line 15, and the crucible 11 and the induction coil 14 surrounding the crucible are controlled to perform relative lifting motion according to the comparison result, so that the actual height value of the crucible high-temperature line 15 is consistent with the preset position height value, that is, the closed-loop control of the position of the crucible high-temperature line is realized, and the accuracy and the reliability of the process can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A height control system of a crucible high temperature line is characterized by comprising a temperature acquisition unit, a control unit, an execution unit and a position detection unit, wherein,
the temperature acquisition unit is used for acquiring actual temperatures corresponding to different heights of the crucible in the process of carrying out the process in the growth furnace and sending the actual temperatures to the control unit;
the control unit is used for obtaining an actual height value of a crucible high-temperature line based on corresponding actual temperatures at different heights of the crucible and comparing the actual height value with a preset position height value of the crucible high-temperature line;
the execution unit is used for driving the crucible to perform lifting motion according to the comparison result of the control unit, so that the crucible and the induction coil surrounding the crucible perform relative lifting motion, and the actual height value is consistent with the preset position height value;
the position detection unit is used for detecting the actual height value of a preset monitoring point on the crucible and sending the actual height value to the control unit;
the control unit is also used for calculating and obtaining a preset position height value of the crucible high-temperature line according to the following formula;
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line; j is the actual height value of a preset monitoring point on the crucible; Δ h is a preset distance value.
2. The system of claim 1, wherein the temperature acquisition unit comprises an infrared imager configured to acquire thermal image data containing actual temperatures corresponding to different heights of the crucible and to transmit the thermal image data to the control unit.
3. The system as claimed in claim 1, wherein the actuating unit comprises a driving device for driving the crucible or the induction coil to move up and down.
4. The system of claim 1, wherein the predetermined monitoring point is located at the bottom of the crucible.
5. A growth furnace, comprising a furnace body, a crucible arranged in the furnace body and an induction coil arranged around the furnace body, characterized by further comprising a height control system of the crucible high temperature line of any one of claims 1 to 4.
6. The growth furnace of claim 5, wherein the temperature acquisition unit comprises an infrared imager for acquiring thermal image data containing corresponding actual temperatures at different heights of the crucible and sending the thermal image data to the control unit;
the growth furnace also comprises an observation window arranged on the side wall of the furnace body, and the infrared imager is arranged at the position outside the furnace body corresponding to the observation window.
7. The growth furnace according to claim 6, wherein the furnace body comprises an inner quartz tube and an outer quartz tube which is sleeved outside the inner quartz tube at intervals, and the intervals between the inner quartz tube and the outer quartz tube are filled with cooling water; and the observation window is arranged in the pipe walls of the inner quartz pipe and the outer quartz pipe in a penetrating way, and a sealing structure is arranged around the observation window and used for isolating the observation window from the cooling water.
8. A method for controlling the height of a high temperature line of a crucible, which is used in the process of using a growth furnace for carrying out a process, is characterized by comprising the following steps:
acquiring actual temperatures corresponding to different heights of a crucible in the process of carrying out a process in a growth furnace;
obtaining actual height values of a crucible high temperature line based on corresponding actual temperatures at different heights of the crucible, and comparing the actual height values with preset position height values of the crucible high temperature line;
according to the comparison result, the crucible and an induction coil surrounding the crucible are relatively lifted so that the actual height value is consistent with the preset position height value;
in the step of obtaining an actual height value of a crucible high temperature line based on the actual temperatures corresponding to the different heights of the crucible and comparing the actual height value with a preset position height value of the crucible high temperature line, the method for obtaining the preset position height value of the crucible high temperature line includes:
detecting the actual height value of a preset monitoring point on the crucible;
calculating and obtaining a preset position height value of the crucible high temperature line according to the following formula;
J1＝J-△h；
wherein J1 is the preset position height value of the crucible high temperature line; j is the actual height value of a preset monitoring point on the crucible; Δ h is a preset distance value;
and in the step of enabling the crucible and the induction coil surrounding the crucible to perform relative lifting movement according to the comparison result so as to enable the actual height value to be consistent with the preset position height value, driving the crucible to perform lifting movement.
9. The method as claimed in claim 8, wherein the predetermined monitoring point is located at the bottom of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910414175.XA CN111945218B (en) | 2019-05-17 | 2019-05-17 | Height control system and method for crucible high-temperature line and growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910414175.XA CN111945218B (en) | 2019-05-17 | 2019-05-17 | Height control system and method for crucible high-temperature line and growth furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111945218A CN111945218A (en) | 2020-11-17 |
| CN111945218B true CN111945218B (en) | 2021-11-16 |
Family
ID=73335560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910414175.XA Active CN111945218B (en) | 2019-05-17 | 2019-05-17 | Height control system and method for crucible high-temperature line and growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111945218B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201924102U (en) * | 2010-09-16 | 2011-08-10 | 中国电子科技集团公司第四十六研究所 | Heating temperature control device of high-temperature carburization silicon single crystal growth furnace |
| CN102912443A (en) * | 2012-10-17 | 2013-02-06 | 北京七星华创电子股份有限公司 | Silicon carbide crystal crystal growing furnace control system |
| CN204570081U (en) * | 2015-05-05 | 2015-08-19 | 山东天岳先进材料科技有限公司 | A kind of device for growing large-size high-purity silicon carbide monocrystalline |
| CN105696079A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field |
| CN106637409A (en) * | 2016-12-14 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Silicon carbide crystal growth device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017024920A (en) * | 2015-07-16 | 2017-02-02 | 竹内電機株式会社 | INDUCTION HEATING APPARATUS FOR SiC SINGLE CRYSTAL GROWTH FURNACE |
-
2019
- 2019-05-17 CN CN201910414175.XA patent/CN111945218B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201924102U (en) * | 2010-09-16 | 2011-08-10 | 中国电子科技集团公司第四十六研究所 | Heating temperature control device of high-temperature carburization silicon single crystal growth furnace |
| CN102912443A (en) * | 2012-10-17 | 2013-02-06 | 北京七星华创电子股份有限公司 | Silicon carbide crystal crystal growing furnace control system |
| CN204570081U (en) * | 2015-05-05 | 2015-08-19 | 山东天岳先进材料科技有限公司 | A kind of device for growing large-size high-purity silicon carbide monocrystalline |
| CN105696079A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field |
| CN106637409A (en) * | 2016-12-14 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Silicon carbide crystal growth device |
Non-Patent Citations (3)
| Title |
|---|
| Effective increase of single-crystalline yield dring PVT growth of SiC by tailoring of temperature gradient;Z.G. Herro et al.;《Journal of Crystal Growth》;20041231;第105-112页 * |
| 感应加热线圈对PVT法生长大直径SiC晶体的影响;张群社等;《西安理工大学学报》;20071231;第23卷(第1期);第83-86页 * |
| 碳化硅单晶生长工艺的研究;陈蛟;《中国优秀硕士学位论文全文数据库 工程科技I辑》;20130315;参见第6页第3段、第8页图1.6、第16页第2段、第16页倒数第一段、第19页第1段 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111945218A (en) | 2020-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109196144B (en) | Method and apparatus for manufacturing silicon single crystal | |
| US9708731B2 (en) | Method of producing silicon single crystal | |
| US9587325B2 (en) | Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus | |
| JP6206178B2 (en) | Single crystal pulling method | |
| US10072352B2 (en) | Silicon single crystal growing apparatus and silocon single crystal growing method using same | |
| TW201447059A (en) | Method for controlling the diameter of a single crystal to a set point diameter | |
| JP2017522258A5 (en) | ||
| CN111945218B (en) | Height control system and method for crucible high-temperature line and growth furnace | |
| CN1295632A (en) | Open-loop method and system for controlling growth of semiconductor crystal | |
| JP6939714B2 (en) | Method for measuring the distance between the melt surface and the seed crystal, method for preheating the seed crystal, and method for producing a single crystal | |
| JP4035924B2 (en) | Single crystal diameter control method and crystal growth apparatus | |
| CN212316281U (en) | Single crystal furnace | |
| KR101283986B1 (en) | Control point proffer device for melt level measuring of ingot growing apparatus | |
| KR102064617B1 (en) | Ingot growing controller and ingot growing control method for it | |
| KR101759002B1 (en) | Single crystal ingot growing apparatus | |
| TWI782726B (en) | Manufacturing method of single crystal | |
| KR101277396B1 (en) | A Ingot Growing Controller | |
| JP3642174B2 (en) | Silicon single crystal pulling apparatus and pulling method thereof | |
| KR102488064B1 (en) | Single-crystal ingot growth apparatus and method of controlling the same | |
| JPH07309694A (en) | Crystal growing device and method therefor | |
| KR101781463B1 (en) | Apparatus and method for growing silicon single crystal ingot | |
| CN105369343B (en) | A kind of single temperature zone crystal growing apparatus and single temperature zone growing method | |
| KR101528060B1 (en) | Anti-deposition View port and ingot growing apparatus having the same | |
| JPS61122187A (en) | Apparatus for pulling up single crystal | |
| KR102147461B1 (en) | Apparatus for growing monocrystalline ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221206 Address after: 101,204 101, 1st to 4th floors, Building 1, Yard 20, Jinshi Road, Mafang Town, Pinggu District, Beijing Patentee after: Beijing North Huachuang Semiconductor Equipment Co.,Ltd. Address before: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. |
|
| TR01 | Transfer of patent right |