KR101283986B1 - Control point proffer device for melt level measuring of ingot growing apparatus - Google Patents

Control point proffer device for melt level measuring of ingot growing apparatus Download PDF

Info

Publication number
KR101283986B1
KR101283986B1 KR1020090116395A KR20090116395A KR101283986B1 KR 101283986 B1 KR101283986 B1 KR 101283986B1 KR 1020090116395 A KR1020090116395 A KR 1020090116395A KR 20090116395 A KR20090116395 A KR 20090116395A KR 101283986 B1 KR101283986 B1 KR 101283986B1
Authority
KR
South Korea
Prior art keywords
melt
chamber
crucible
ingot
level
Prior art date
Application number
KR1020090116395A
Other languages
Korean (ko)
Other versions
KR20110059942A (en
Inventor
박진섭
Original Assignee
(주)에스테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)에스테크 filed Critical (주)에스테크
Priority to KR1020090116395A priority Critical patent/KR101283986B1/en
Publication of KR20110059942A publication Critical patent/KR20110059942A/en
Application granted granted Critical
Publication of KR101283986B1 publication Critical patent/KR101283986B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 CCD 카메라를 이용한 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치에 관한 것으로, CCD 카메라 촬상영역(A)에 기준부재(14)를 설치하여 CCD 카메라(15)를 이용하여 멜트 레벨(Melt Level)을 측정할 때 기준점(기준포인터)으로 제공되도록 함으로써 멜트(5) 표면(3a)을 정확히 측정할 수 있어서 도가니 구동수단(18)의 제어 및 멜트(5)의 레벨 제어가 안정화되며, 멜트(5) 온도 또한 안정화되어 잉곳(13)의 품질과 생산성이 크게 향상되도록 한 것이다.The present invention relates to a reference point providing apparatus for measuring a melt level of an ingot growth apparatus using a CCD camera, and by installing a reference member 14 in a CCD camera imaging area (A) and using a CCD camera 15, a melt level (Melt) When the level is measured, the surface 3a of the melt 5 can be accurately measured by being provided as a reference point (reference pointer), so that the control of the crucible drive means 18 and the level control of the melt 5 are stabilized. (5) The temperature is also stabilized so that the quality and productivity of the ingot 13 is greatly improved.

상기 기준부재(14)는 소형으로 설치되어 잉곳(13)의 성장이나 다른 공정에 전혀 영향을 주지 아니할 뿐 아니라, 수냉실(또는 수냉관)의 하단부 또는 수냉실이 구비된 제2 챔버(6)의 하단부에 설치되어 냉각되므로 열변형이 방지되고 사용 수명이 향상된다.The reference member 14 is compactly installed and does not affect the growth or other processes of the ingot 13 at all, and the second chamber 6 having the lower end of the water cooling chamber (or the water cooling tube) or the water cooling chamber is provided. It is installed at the bottom of the cooling unit to prevent heat deformation and improve its service life.

잉곳성장장치, 멜트 레벨, 측정, CCD 카메라, 기준점, 기준부재, 석영, 잉곳 Ingot Growth Device, Melt Level, Measurement, CCD Camera, Reference Point, Reference Material, Quartz, Ingot

Description

잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치{CONTROL POINT PROFFER DEVICE FOR MELT LEVEL MEASURING OF INGOT GROWING APPARATUS}Control Point Providing Device for Melt Level Measurement of Ingot Growth Device {CONTROL POINT PROFFER DEVICE FOR MELT LEVEL MEASURING OF INGOT GROWING APPARATUS}

본 발명은 CCD 카메라를 이용하여 멜트 레벨(Melt Level)을 측정할 때, 기준부재에 의해 기준점(기준 포인터)이 제공되도록 함으로써 멜트 레벨 제어의 불안정성과 잉곳(Ingot)의 품질불량이 해소되는 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치에 관한 것이다.The present invention provides a reference point (reference pointer) provided by a reference member when measuring a melt level using a CCD camera, thereby eliminating instability of melt level control and poor quality of ingots. A reference point providing device for measuring the melt level of the device.

일반적으로 단결정 잉곳(Ingot)은 초크랄스키(Czochralski) 결정 성장법(CZ 법)으로 제조되며, 핫죤 영역에 설치되는 도가니에 폴리 실리콘 등의 고체 원료를 충전하고 전열히터로 가열 및 용융시켜 융액(Melt)을 만든 다음, 단결정 시드(seed)를 시드 커넥터에 매달아 융액에 접촉시킨 후 서서히 회전 및 인상시키면, 네크부(neck part), 직경이 증가하는 숄더부(shoulder part), 직경이 일정한 원기둥 형태의 바디부(body part)의 순서로 인상되고, 마지막으로 직경이 감소하는 테일부(tail part)를 끝으로 단결정 잉곳이 얻어진다.In general, single crystal ingot is manufactured by Czochralski crystal growth method (CZ method), and a solid material such as polysilicon is charged into a crucible installed in a hot zone and heated and melted with an electrothermal heater to melt ( Melt), and then the single crystal seed is suspended on the seed connector and brought into contact with the melt, and then slowly rotated and pulled up to form a neck part, a shoulder part with increasing diameter, and a cylindrical shape with a constant diameter. A single crystal ingot is obtained at the end of the tail part, which is pulled up in the order of the body part of and finally reduced in diameter.

상기 잉곳성장장치(또는 잉곳생산장치)는 냉각수단이 구비된 베이스챔버(메인챔버)와, 베이스챔버 내부에 설치되고 폴리 실리콘(Hot Melt)을 용융시키는 석영도가니와, 석영도가니를 지지하는 흑연도가니와, 석영도가니와 흑연도가니를 지지하는 페데스탈과, 상기 도가니를 가열하는 전열히터와, 상기 전열히터로 대전력(大電力)을 공급하는 전원공급수단과, 상기 도가니 및 페데스탈을 지지ㆍ회전ㆍ상승ㆍ하강시키는 구동축 및 구동수단과, 메인챔버(Main Chamber) 상부에 설치되는 돔챔버(Dome Chamber)와, 상기 돔챔버에 설치되는 게이트밸브 및 뷰포트와, 돔챔버 상부에 설치되는 풀챔버(Pull Chamber)와, 상기 풀챔버에 설치되는 잉곳(Ingot) 인상케이블 및 인상수단(Seed Mechanism)과, 진공수단, 냉각수단, 감지수단, 제어수단 및 계측수단 등으로 구성된다.The ingot growth apparatus (or ingot production apparatus) includes a base chamber (main chamber) provided with cooling means, a quartz crucible installed inside the base chamber to melt polysilicon, and a graphite crucible supporting the quartz crucible. And a pedestal for supporting a quartz crucible and a graphite crucible, an electrothermal heater for heating the crucible, a power supply means for supplying a large power to the electrothermal heater, and supporting, rotating, and elevating the crucible and the pedestal. ㆍ Down drive shaft and drive means, Dome chamber installed on the main chamber, Gate valve and viewport installed on the dome chamber, Pull chamber installed on the dome chamber ), An ingot pulling cable and a pulling mechanism installed in the full chamber, a vacuum means, a cooling means, a sensing means, a control means, a measuring means, and the like.

한편, 잉곳(Ingot)이 성장함에 따라 도가니의 멜트(Melt)가 점차적으로 소모되면서 멜트 레벨(액위)이 낮아질 뿐 아니라, 잉곳 성장 속도에 맞쳐 케이블을 인상시키는 방법으로 시드(Seed)를 상승시키고 있으며, 시드의 상승 속도에 비례하여 도가니를 상승시키게되나, 비례 상승속도가 80% 수준으로 오차가 심할 뿐 아니라, 시간과 온도에 따라 도가니가 변형되면서 멜트 레벨(Melt Level) 또한 달라지게 되므로 측정수단을 이용하여 멜트 레벨의 변동 추이를 측정하면서 도가니 구동수단으로 도가니를 상승시켜 멜트 레벨을 일정하게 유지하고 있다.Meanwhile, as the ingot grows, as the melt of the crucible is gradually consumed, the melt level is lowered, and the seed is raised by raising the cable in accordance with the ingot growth rate. The crucible is raised in proportion to the rising rate of the seed, but the proportional rising speed is 80%, and the error is not only severe but also the melt level is changed according to time and temperature. While measuring the fluctuation of the melt level, the crucible is raised by the crucible driving means to keep the melt level constant.

멜트 레벨 측정방법 중에는 멜트를 들여다 볼 수 있도록 챔버 상부에 위치하는 뷰포트(View Port) 외부에 CCD 카메라를 설치하여 챔버 내부의 멜트(Melt)를 촬상한 후 화상 처리과정을 거쳐 멜트 레벨의 변동 여부를 비교 판단한 다음 멜트 레벨에 변동이 있는 경우 도가니 구동수단으로 도가니를 상승시켜 멜트 레벨이 일정하게 유지되도록 하고 있으나, CCD 카메라로 멜트(Melt)를 촬영할 때 기준점없이 멜트 표면만 촬영하는 방법으로 측정하고 있어서 그 오차가 심한 편이다.In the melt level measurement method, a CCD camera is installed outside the view port located in the upper part of the chamber so that the melt can be peeked out to capture the melt inside the chamber, and the image processing process determines whether the melt level is changed. If there is a change in the melt level after the comparison decision, the crucible driving means raises the crucible to keep the melt level constant.However, when taking a melt with a CCD camera, the melt surface is measured without a reference point. The error is very severe.

따라서 멜트 레벨의 정밀 측정 및 도가니 구동수단을 이용한 멜트의 레벨 제어가 어려워 멜트 온도 안정화에 크게 기여하지 못할 뿐 아니라, 성장 잉곳(Ingot)의 품질이 저하되고 불량율도 높아 생산성이 떨어지는 등의 문제점이 있었다.Therefore, it is difficult to precisely measure the melt level and control the level of the melt using the crucible driving means, so that it does not contribute significantly to the stabilization of the melt temperature. .

본 발명은 촬상영역에 기준(基準)부재를 설치하여 기준점(基準点)으로 제공되도록 함으로써 CCD 카메라로 멜트 레벨(Melt Level)을 측정할 때 멜트의 레벨 변위를 비교 측정할 수 있어서 잉곳(Ingot)의 품질불량과 멜트 레벨 제어의 불안정성이 해소되는 멜트 레벨 측정용 기준점 제공장치를 제공함에 특징이 있다.The present invention is to provide a reference member in the imaging area to be provided as a reference point so that the level displacement of the melt can be compared and measured when measuring the melt level with a CCD camera. It is characterized in that it provides a reference point providing apparatus for measuring the melt level to eliminate the poor quality and instability of the melt level control.

본 발명은 잉곳성장장치의 멜트(Melt) 상부에 위치하는 챔버(수냉실이 구비 된 챔버) 하단부에 기준부재를 설치하여 CCD 카메라로 멜트 레벨(Melt Level)을 측정할 때 측정 기준점으로 제공될 수 있게 구성함으로써 멜트 레벨이 일정하게 유지되어 잉곳의 품질불량과 레벨 제어의 불안정이 해소된다.The present invention can be provided as a measurement reference point when measuring the melt level (Melt Level) by the CCD camera by installing a reference member at the bottom of the chamber (chamber with a water cooling chamber) located above the melt (melt) of the ingot growth apparatus. This ensures that the melt level remains constant, eliminating ingot quality and instability in level control.

상기 기준부재는 소정길이로 하향 돌출되는 석영이 바람직하며, CCD 카메라의 촬상영역에 설치되어 망점형의 기준포인터 또는 소정길이의 기준포인터가 제공되어 멜트의 레벨 변위를 비교 측정할 수 있게 구성된다.The reference member is preferably quartz projecting downward to a predetermined length, and is provided in the imaging area of the CCD camera so that a reference point of a dot type or a reference length of a predetermined length is provided to be able to compare and measure the level displacement of the melt.

상기 기준부재는 잉곳의 성장을 방해하거나 간섭하지 않는 공간에 별도로 설치하거나, 또는 수냉실이 구비된 제2 챔버 하단부에 돌출되게 설치하여 CCD 카메라로 촬상할 수 있는 위치가 바람직하다. The reference member may be installed separately in a space that does not interfere with or interfere with the growth of the ingot, or may be installed to protrude to the lower end of the second chamber provided with the water cooling chamber so that the CCD camera can be photographed.

본 발명은 CCD 카메라를 이용하여 멜트 레벨(Melt Level)을 측정할 때 CCD 카메라(15) 촬상영역에 설치되는 기준부재(14)에 의해 촬상 기준포인터가 제공되므로 잉곳성장장치의 멜트 표면(3a)의 변위를 비교 측정할 수 있어서 도가니 구동수단(18)의 제어가 안정화되고 멜트 레벨이 일정하게 유지되므로, 멜트(5) 온도가 안정화되고 잉곳(13)의 품질과 생산성이 크게 향상되는 효과가 있다.In the present invention, since the imaging reference pointer is provided by the reference member 14 installed in the imaging area of the CCD camera 15 when measuring the melt level using the CCD camera, the melt surface 3a of the ingot growth apparatus. Can be compared and measured, so that the control of the crucible drive means 18 is stabilized and the melt level is kept constant, so that the melt 5 temperature is stabilized and the quality and productivity of the ingot 13 are greatly improved. .

또한 본 발명의 기준부재(14)는 수냉실 또는 수냉관이 구비된 제2 챔버(6) 하단부 등에 설치되어 냉각되므로 열변형등이 방지되어 사용 수명이 크게 향상되며, 소형으로 설치되어 잉곳(13) 성장이나 다른 공정에 전혀 영향을 주지 않는 등 의 효과가 있는 매우 유용한 발명이다.In addition, the reference member 14 of the present invention is installed in the lower end of the second chamber 6 provided with the water cooling chamber or the water cooling tube, and the like, so that the thermal deformation is prevented and the service life is greatly improved. This is a very useful invention that has no effect on growth or other processes.

이하, 본 발명의 바람직한 실시 예들을 첨부한 도면에 따라 상세히 설명하고자 한다. 본 발명의 실시 예들을 설명함에 있어 도면들 중 동일한 구성 요소들은 가능한 한 동일 부호로 기재하고, 관련된 공지구성이나 기능에 대한 구체적인 설명은 본 발명의 요지가 모호해지지 않도록 생략한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments of the present invention, the same components in the drawings are denoted by the same reference numerals as much as possible, and detailed descriptions of related known configurations or functions will be omitted so as not to obscure the subject matter of the present invention.

도 1은 본 발명 일 예로 도시한 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치(1)의 구성도로, CCD 카메라(15)를 이용하여 멜트 레벨(Melt Level)을 측정할 때 기준점(기준포인터)으로 제공되는 기준부재(14)가 고정 설치되어 잉곳성장장치의 멜트(5)의 레벨 변위를 비교 측정할 수 있게 구성되며, 이에 따라 도가니 구동수단(18)의 제어 및 멜트 레벨의 제어가 안정화되며, 멜트(5) 온도가 안정화되고 잉곳(13)의 품질과 생산성이 크게 향상된다.1 is a configuration diagram of a reference point providing apparatus 1 for measuring a melt level of an ingot growth apparatus as an example of the present invention, and a reference point (reference pointer) when measuring a melt level using a CCD camera 15. The reference member 14 provided as a fixed installation is configured to be able to measure the level displacement of the melt (5) of the ingot growth apparatus, the control of the crucible drive means 18 and the control of the melt level is stabilized accordingly The melt 5 temperature is stabilized and the quality and productivity of the ingot 13 are greatly improved.

본 발명이 적용되는 초크랄스키(Czochralski) 결정 성장법(CZ 법)에 의한 잉곳성장장치의 구조를 살펴보면, 수냉실(도시안됨)이 구비되는 제1 챔버(메인챔버)(2) 내부에 고온의 멜트(5) 용용액이 수용되는 도가니(3)가 설치되고, 도가니(3) 하부에 페데스탈(16)과 구동축(17) 및 도가니 구동수단(18)이 차례로 설치되고, 도가니(3) 바깥에는 전열히터(4)가 빙둘러 설치되고, 핫죤(HZ) 상부에는 멜 트(5)의 온도가 유지될 수 있게 차열부재(8)가 위치하며, 상기 차열부재(8)는 지지부재(9)에 고정된다.Looking at the structure of the ingot growth apparatus by the Czochralski crystal growth method (CZ method) to which the present invention is applied, the high temperature inside the first chamber (main chamber) 2 is provided with a water cooling chamber (not shown) The crucible (3) for receiving the melt (5) of the solution is installed, the pedestal (16), the drive shaft (17) and the crucible driving means (18) are installed in the lower part of the crucible (3), the crucible (3) outside The heat transfer heater 4 is installed around the heat shield, and a heat shield member 8 is positioned above the hot zone HZ to maintain the temperature of the melt 5, and the heat shield member 8 is a support member 9. It is fixed to).

도가니(3) 상부에는 수냉실이 구비된 제2 챔버(6)가 설치되며, 제2 챔버(6)의 공간부(12)에는 성장중인 잉곳(13)을 적정 속도로 인상시킬 수 있는 시드(11)와 시드척 및 인상케이블(10)이 설치되며, 제1 챔버(2)의 상부에는 제1 챔버(2) 내부를 들여다 볼 수 있는 하나 이상 복수의 뷰포트(View Port)(7)가 설치되며, 도 1에 도시한 것처럼 상기 뷰포터(7)를 통하여 도가니(3) 내부의 멜트(5)를 촬영하는 방법으로 멜트의 표면(3a)을 촬영하여 측정하는 CCD 카메라(15)가 뷰포터(7) 외부에 근접 설치된다.A second chamber 6 having a water cooling chamber is installed in the upper part of the crucible 3, and the seed 12 capable of pulling the growing ingot 13 at an appropriate speed in the space part 12 of the second chamber 6. 11) and the seed chuck and the pulling cable 10 is installed, one or more plurality of view ports (7) for looking into the interior of the first chamber (2) on the upper part of the first chamber (2) As shown in FIG. 1, the CCD camera 15 for photographing and measuring the surface 3a of the melt is photographed by the method of photographing the melt 5 inside the crucible 3 through the view porter 7. (7) It is installed close to the outside.

즉, 상기 기준부재(14)는 잉곳(13)의 성장을 방해하거나 간섭하지 않는 공간, 또는 잉곳성장장치의 멜트(Melt) 상부에 위치하는 제2 챔버(수냉실이 구비된 챔버)(6)의 하단부, 이를테면 촬상영역(A) 또는 촬상 시작영역에 하향 돌출형으로 설치되어 CCD 카메라(15)로 멜트 레벨(Melt Level)을 측정할 때 측정 기준점으로 제공된다. That is, the reference member 14 is a space that does not interfere or interfere with the growth of the ingot 13, or a second chamber (chamber equipped with a water cooling chamber) 6 located above the melt of the ingot growth apparatus. It is installed in the lower end of the, for example, in the imaging area (A) or the imaging start area downwardly provided as a reference point when measuring the melt level (Melt Level) by the CCD camera (15).

상기 기준부재(14)는 CCD 카메라(15)로 멜트(5)를 촬영할 때 망점형의 기준포인터 또는 소정길이의 기준포인터가 제공되어 멜트(5)의 레벨 변위 정도를 비교 측정할 수 있게 된다.The reference member 14 is provided with a dot-point reference pointer or a reference length of a predetermined length when the melt 5 is photographed by the CCD camera 15 so that the degree of level displacement of the melt 5 can be compared and measured.

상기 CCD 카메라(15)가 뷰포트(7)를 통하여 도가니(3) 내부의 멜트(5) 표면(3a)을 촬영할 때 기준점인 기준부재(14)가 망점 형태로 함께 촬영되며, 화상 처리시 기준점으로 제공되어 멜트 레벨의 변위(변동) 여부가 비교 판단되며, 멜트 레벨에 변동이 있는 경우 CCD 카메라(15)에 접속되는 제어기에 의해 도가니 구동수단(18)이 동작하여 도가니(3)를 상승시켜 멜트(5) 레벨이 일정하게 유지되므로 멜트(5)의 레벨 제어가 안정화되며, 멜트(5) 온도 또한 안정화되어 잉곳(13)의 품질과 생산성이 크게 향상된다.When the CCD camera 15 photographs the surface of the melt 5 inside the crucible 3 through the viewport 7, the reference member 14, which is a reference point, is photographed together in the form of a half-dot, and is used as a reference point in image processing. It is determined that the melt level displacement (change) is provided, and when there is a change in the melt level, the crucible driving means 18 is operated by a controller connected to the CCD camera 15 to raise the crucible 3 to melt. (5) Since the level is kept constant, the level control of the melt 5 is stabilized, the temperature of the melt 5 is also stabilized, and the quality and productivity of the ingot 13 are greatly improved.

상기 기준부재(14)는 소형으로 설치되어 잉곳 성장이나 다른 공정에 전혀 영향을 주지 아니할 뿐 아니라, 수냉실(또는 수냉관)하단부 또는 수냉실이 구비된 제2 챔버(6) 하단부에 돌출형으로 설치되더라도 냉각에 의해 열변형이 방지되므로 사용 수명이 향상된다.The reference member 14 is compactly installed and does not affect ingot growth or other processes at all, and also protrudes from the lower portion of the water cooling chamber (or water cooling tube) or the lower end of the second chamber 6 having the water cooling chamber. Even if it is installed, the service life is improved because the thermal deformation is prevented by cooling.

본 발명에서 기준부재(14)는 석영(Quartz)일 수 있으며, 상기 석영(Quartz)은 주위의 환경, 이를테면 핫죤(Hot Zone)의 고온 환경하에서도 화학조성과 형태가 유지되는 고온형(β)석영(육방정계)이 바람직하다.In the present invention, the reference member 14 may be quartz (Quartz), the quartz (Quartz) is a high-temperature type (β) is maintained in the chemical composition and form even in the surrounding environment, such as a high temperature environment of the hot zone (Hot Zone) Quartz (hexagonal) is preferred.

본 발명에서 제2 챔버(6)의 하단부와 차열부재(8) 및/또는 지지부재(9)에 의해 뷰포트(7)로 내부를 관망할 수 있는 영역이 제한되며, 따라서 CCD 카메라(15)로 촬영할 수 있는 영역은 (B1)와 (B2) 사이가 되며, 상기 (B1)(B2)는 CCD 카메라(15)로 촬영할 수 있는 멜트 표면을 표시한 것이다.In the present invention, the lower end portion of the second chamber 6 and the heat shielding member 8 and / or the support member 9 are limited to an area that can be viewed inside the viewport 7, and thus the CCD camera 15. The imageable area is between (B1) and (B2), and (B1) and (B2) indicate a melt surface that can be captured by the CCD camera 15.

이상과 같이 설명한 본 발명은 본 실시 예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 여러가지 치환, 변형 및 변경이 가능하며, 이는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 자명한 것이다.The present invention as described above is not limited to the present embodiment and the accompanying drawings, various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention, which is usually in the art It is self-evident for those who have knowledge.

도 1 : 본 발명 일 예로 도시한 기준부재 설치 상태도.1 is a state diagram showing the installation of the reference member as an example of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

(1)--잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치(1)-Reference point providing device for measuring melt level of ingot growth device

(2)--제1 챔버 (3)--도가니(2)-the first chamber (3)-the crucible

(3a)--멜트 표면 (4)--전열히터(3a)-melt surface (4)-electric heater

(5)--멜트(Melt) (6)--제2 챔버(5)-Melt (6)-Second Chamber

(7)--뷰포트 (8)--차열부재(7)-viewport (8)-heat shield

(9)--지지부재 (10)--인상케이블(9)-support member (10)-raise cable

(11)--시드 (12)--공간부 (11)-seed (12)-space

(13)--잉곳 (14)--기준부재(13)-Ingot (14)-Reference member

(15)--CCD 카메라 (16)--페데스탈(15)-CCD Camera (16)-Pedestal

(17)--구동축 (18)--도가니 구동수단(17)-drive shaft (18)-crucible driving means

(A)--촬상영역 (HZ)--핫죤(A)-Shooting Area (HZ)-Hot Zone

Claims (2)

수냉실이 구비되는 제1 챔버(2) 내부에 고온의 멜트(5) 용용액이 수용되는 도가니(3)가 설치되고, 상기 도가니(3) 하부에 페데스탈(16)과 구동축(17) 및 도가니 구동수단(18)이 차례로 설치되고, 상기 도가니(3) 바깥에 전열히터(4)가 빙둘러 설치되고, 핫죤(HZ) 상부에 멜트(5)의 온도가 유지될 수 있게 차열부재(8)가 위치하고, 상기 도가니(3) 상부에 수냉실이 구비된 제2 챔버(6)가 설치되고, 상기 제2 챔버(6)의 공간부(12)에 성장중인 잉곳(13)을 인상시킬 수 있는 시드(11)와 시드척 및 인상케이블(10)이 설치되고, 상기 제1 챔버(2)의 상부에 제1 챔버(2) 내부를 들여다 볼 수 있는 뷰포트(7)가 설치되고, 차열부재(8) 하단에 멜트 레벨 측정용 기준부재가 설치된 잉곳성장장치에 있어서;A crucible 3 containing a high melt 5 solution is installed in the first chamber 2 having a water cooling chamber, and a pedestal 16, a drive shaft 17, and a crucible are disposed below the crucible 3. The driving means 18 are sequentially installed, the heat transfer heater 4 is installed outside the crucible 3, and the heat shield member 8 is maintained so that the temperature of the melt 5 can be maintained on the hot zone HZ. Is located, a second chamber 6 having a water cooling chamber is installed above the crucible 3, and the ingot 13 which is growing in the space 12 of the second chamber 6 can be raised. The seed 11 and the seed chuck and the pulling cable 10 are installed, and a viewport 7 through which the inside of the first chamber 2 can be seen is installed above the first chamber 2, and the heat shield member ( 8) Ingot growth apparatus provided with a reference member for measuring the melt level at the bottom; 상기 차열부재(8) 대신 수냉실이 구비된 제2 챔버(6)의 하단부에 하향 돌출형의 고온형 석영 기준부재(14)를 설치하여 망점 형태의 기준포인터가 제공되도록 함으로써, CCD 카메라(15)가 뷰포터(7)를 통하여 도가니(3) 내부의 멜트(5) 표면(3a)을 촬영할 때 상기 기준부재(14)가 망점 형태로 함께 촬영되어 멜트(5)의 레벨 변위를 비교 측정할 수 있도록 함을 특징으로 하는 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치.The CCD camera 15 is provided by installing a downward reference high-temperature quartz reference member 14 at a lower end of the second chamber 6 provided with a water cooling chamber instead of the heat shield member 8 to provide a reference pointer in the form of a dot. When the 3 is photographed on the surface of the melt 5 inside the crucible 3 through the view porter 7, the reference member 14 is photographed together in the form of a half-dot to compare and measure the level displacement of the melt 5. Apparatus for providing a reference point for measuring the melt level of the ingot growth apparatus, characterized in that to enable. 삭제delete
KR1020090116395A 2009-11-30 2009-11-30 Control point proffer device for melt level measuring of ingot growing apparatus KR101283986B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090116395A KR101283986B1 (en) 2009-11-30 2009-11-30 Control point proffer device for melt level measuring of ingot growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090116395A KR101283986B1 (en) 2009-11-30 2009-11-30 Control point proffer device for melt level measuring of ingot growing apparatus

Publications (2)

Publication Number Publication Date
KR20110059942A KR20110059942A (en) 2011-06-08
KR101283986B1 true KR101283986B1 (en) 2013-07-09

Family

ID=44394788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090116395A KR101283986B1 (en) 2009-11-30 2009-11-30 Control point proffer device for melt level measuring of ingot growing apparatus

Country Status (1)

Country Link
KR (1) KR101283986B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102094850B1 (en) 2018-11-28 2020-03-30 (주)에스테크 Melt gap automatic control method of silicon single crystal growth system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101992775B1 (en) * 2013-01-30 2019-06-25 에스케이실트론 주식회사 An apparatus for growing a single crystal ingot
KR101456607B1 (en) * 2013-02-26 2014-11-03 (주)에스테크 Method for continuous supply apparatus of ingot raw material and its continuous supply apparatus
KR101528060B1 (en) * 2013-12-03 2015-06-10 주식회사 엘지실트론 Anti-deposition View port and ingot growing apparatus having the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290906A (en) * 2006-04-25 2007-11-08 Shin Etsu Handotai Co Ltd Method of measuring distance between reference reflector and melt surface, method of controlling melt surface level by using the measured result, and apparatus for manufacturing silicon single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290906A (en) * 2006-04-25 2007-11-08 Shin Etsu Handotai Co Ltd Method of measuring distance between reference reflector and melt surface, method of controlling melt surface level by using the measured result, and apparatus for manufacturing silicon single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102094850B1 (en) 2018-11-28 2020-03-30 (주)에스테크 Melt gap automatic control method of silicon single crystal growth system

Also Published As

Publication number Publication date
KR20110059942A (en) 2011-06-08

Similar Documents

Publication Publication Date Title
CN109196144B (en) Method and apparatus for manufacturing silicon single crystal
JP4929817B2 (en) Method for measuring distance between reference reflector and melt surface, method for controlling melt surface position using the same, and apparatus for producing silicon single crystal
KR101283986B1 (en) Control point proffer device for melt level measuring of ingot growing apparatus
JP4930487B2 (en) Method for measuring distance between melt surface and lower end of in-furnace structure, method for controlling position of melt surface using the same, method for producing single crystal and single crystal production apparatus
TW202302929A (en) Thermal field control device for crystal pulling furnace and crystal pulling furnace
JP3704710B2 (en) Method of setting seed crystal deposition temperature and silicon single crystal manufacturing apparatus
JP5404264B2 (en) Single crystal silicon manufacturing method and single crystal silicon manufacturing apparatus
JP4035924B2 (en) Single crystal diameter control method and crystal growth apparatus
KR20100085470A (en) Method for growing single crystal improved in tail-process and grower for the same
JP2019214486A (en) Method of measuring interval between melt level and seed crystal, method of preheating seed crystal, and method of manufacturing single crystal
JP4360163B2 (en) Single crystal manufacturing apparatus and single crystal manufacturing method
KR101155413B1 (en) Ingot weight measurement device of ingot growing apparatus
CN216304033U (en) System for monitoring state of liquid level of silicon melt in single crystal furnace and state of crucible
JP2003176199A (en) Apparatus and method for pulling single crystal
KR101137936B1 (en) Method of melt temperature measuring and its measuring devicd for pulling ingot apparatus
JP2003055084A (en) Device and method for pulling single crystal
CN114761626B (en) Single crystal production system and single crystal production method
KR100415172B1 (en) Grower for single crystalline silicon ingot
KR20240155336A (en) Method and device for manufacturing silicon single crystal and method for manufacturing silicon wafer
CN214361839U (en) Quartz pin and monocrystalline silicon growth device
WO2023195217A1 (en) Method and apparatus for producing silicon single crystal and method for producing silicon wafer
JP2011032136A (en) Method for monitoring height of liquid surface
CN116288660A (en) Control system and method for liquid level spacing for growth of monocrystalline silicon rod
JP2017193469A (en) After-heater and sapphire single crystal production apparatus
KR20090074940A (en) Growing apparatus of a single crystal ingot having thermocouple

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20190701

Year of fee payment: 7