CN210974929U - Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus - Google Patents
Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus Download PDFInfo
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- CN210974929U CN210974929U CN201921527970.1U CN201921527970U CN210974929U CN 210974929 U CN210974929 U CN 210974929U CN 201921527970 U CN201921527970 U CN 201921527970U CN 210974929 U CN210974929 U CN 210974929U
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Abstract
The utility model provides a crucible for silicon carbide crystal growth and a silicon carbide crystal growing device, wherein the crucible for silicon carbide crystal growth comprises a crucible body and a graphite rod, the crucible body is provided with a containing cavity, and the containing cavity is provided with a growth raw material area for containing a silicon carbide crystal growth raw material; the graphite rod is disposed within the containment chamber and at least a portion of the graphite rod is located in the growth feedstock region. The middle axial region that can avoid the crucible body of graphite rod sets up and forms a large amount of recrystallization polycrystalline silicon carbide regions, improves the utilization ratio of growth raw materials, and the graphite rod can also strengthen induction heating's heat distribution moreover for growth raw materials temperature field in the crucible body distributes more evenly, and then is favorable to the growth of crystal, thereby has solved the technical problem that the utilization ratio of carborundum crystal growth raw materials is low among the prior art.
Description
Technical Field
The utility model relates to an electronic industry and semiconductor material technical field, concretely relates to crucible and silicon carbide crystal growing device are used in silicon carbide crystal growth.
Background
Silicon carbide (SiC) is a representative of third-generation semiconductor materials, has the characteristics of wide energy bandwidth, high thermal conductivity, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, good chemical stability and the like, is an ideal material for manufacturing high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting and photoelectric integrated elements, and has wide application prospects in the aspects of high-frequency, high-power, high-temperature-resistant and radiation-resistant semiconductor elements, ultraviolet detectors and the like. The superior semiconductor characteristics of SiC will be available for many devices in the future. With the further development of the SiC semiconductor technology, the application field of SiC devices is also becoming wider and wider, becoming a new hot spot for the international research in the fields of new materials, microelectronics and optoelectronics.
The PVT method is currently the most mature method for growing silicon carbide single crystals recognized in the world, and the silicon carbide single crystals grown by the technique have been commercially produced in large quantities in many countries. The method comprises the steps of heating a graphite crucible through an electromagnetic induction coil, carrying out sublimation decomposition on a growth raw material (silicon carbide powder) at high temperature in the graphite crucible, moving the growth raw material to a low-temperature region under the drive of a temperature gradient, and finally nucleating and crystallizing on seed crystals of the graphite crucible to grow silicon carbide crystals. In actual crystal growth, the growth raw material in the graphite crucible is at the lowest temperature in the middle portion of the temperature field due to the temperature field distribution, and therefore, a large number of recrystallized polycrystalline silicon carbide regions tend to be formed in the middle axial region of the crucible after the crystal growth is completed. The utilization rate of the growth raw materials is greatly reduced, and the transportation of the gas phase components around to the seed crystals is also not facilitated.
Therefore, how to improve the utilization rate of the growth raw materials and optimize the transportation of gas-phase components has important significance for the growth of the silicon carbide crystal.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a carborundum crystal grows and uses crucible and carborundum crystal growing apparatus, this carborundum crystal grows and uses crucible sets up the graphite rod at this internal bottom center axial direction of following of crucible, the middle part axial region that can avoid the crucible body forms a large amount of recrystallization polycrystal carborundum region, improve the utilization ratio of growth raw materials, and the graphite rod can also strengthen induction heating's heat distribution, make growth raw materials temperature field distribution in the crucible body more even, and then be favorable to the growth of crystal, with the technical problem that the utilization ratio of solving carborundum crystal growth raw materials in the prior art is low.
In order to achieve the above object, according to a first aspect of the present invention, there is provided a crucible for silicon carbide crystal growth.
The crucible for growing the silicon carbide crystals comprises a crucible body and a graphite rod, wherein the crucible body is provided with an accommodating cavity, and the accommodating cavity is provided with a growth raw material area for accommodating the growth raw materials of the silicon carbide crystals; the graphite rod is disposed within the containment chamber and at least a portion of the graphite rod is located in the growth feedstock region.
Furthermore, one end of the graphite rod is fixed on the bottom surface of the crucible body and is perpendicular to the bottom surface of the crucible body.
Furthermore, the graphite rod is cylindrical, and the central axis of the graphite rod and the central axis of the crucible body are located on the same straight line.
Further, the height of the graphite rod is 2/3 of the height of the accommodating cavity.
Further, the diameter of the graphite rod is 2/15-1/5 of the inner diameter of the crucible body.
Furthermore, the diameter of the graphite rod is 20-30 mm.
Further, the crucible body is a graphite crucible, and the inner diameter of the crucible body is 145-155 mm.
Further, the height of the growth raw material area is the same as that of the graphite rod.
Furthermore, the graphite rod and the crucible body are arranged in an integrated structure.
Further, a crucible cover is arranged at the opening of the crucible body; and a silicon carbide seed crystal is arranged on one side of the crucible cover facing the containing cavity.
In order to achieve the above object, according to a second aspect of the present invention, there is provided a silicon carbide crystal growing apparatus.
The silicon carbide crystal growing apparatus comprises a heating device and the crucible for growing the silicon carbide crystal; the heating device comprises an electromagnetic induction coil, and the electromagnetic induction coil is arranged around the crucible body.
The utility model provides a carborundum crystal crucible for growth is similar with ordinary graphite crucible in the appearance, but it sets up a cylindrical graphite rod along bottom center axial direction in the holding cavity of crucible body. This crucible structure not only can avoid the middle part axial region of crucible body to form a large amount of recrystallization polycrystalline silicon carbide region, improves the utilization ratio of growth raw materials greatly, sets up the graphite rod in the middle part moreover and can also strengthen induction heating's heat distribution for growth raw materials temperature field in the crucible body distributes more evenly, and then is favorable to the growth of crystal.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic structural view of a crucible for growing silicon carbide crystals according to the present invention.
In the figure:
1. a crucible body; 2. a graphite rod; 3. a growth material zone; 4. a crucible cover; 5. and (3) silicon carbide seed crystals.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The utility model discloses a crucible for silicon carbide crystal growth, as shown in figure 1, the crucible for silicon carbide crystal growth comprises a crucible body 1 and a graphite rod 2, the crucible body 1 is provided with a containing cavity, and the containing cavity is provided with a growth raw material area 3 for containing growth raw materials of the silicon carbide crystal; a graphite rod 2 is disposed within the containment chamber and at least a portion of the graphite rod 2 is located in the growth feedstock zone 3.
In the above embodiment, the crucible for growing a silicon carbide crystal is mainly formed by combining the crucible body 1 and the graphite rod 2, the crucible body 1 has the accommodating chamber having the growth raw material region 3 for accommodating the growth raw material of the silicon carbide crystal; the graphite rod 2 is arranged in the containing cavity, at least part of the graphite rod 2 is positioned in the growth raw material region 3, and the graphite rod 2 arranged in the containing cavity can prevent the middle axial region of the crucible body 1 from forming a large amount of recrystallized polycrystalline silicon carbide regions, so that the utilization rate of the growth raw materials is improved; and the graphite rod 2 arranged in the containing cavity of the crucible body 1 can enhance the heat distribution of induction heating, so that the temperature field distribution of the growth raw materials in the crucible body 1 is more uniform, and the growth of crystals is facilitated.
As another embodiment of the present invention, one end of the graphite rod 2 is fixed to the bottom surface of the crucible body 1 and is disposed perpendicular to the bottom surface of the crucible body 1.
Further, the graphite rod 2 is cylindrical, and the central axis of the graphite rod 2 and the central axis of the crucible body 1 are positioned on the same straight line.
As shown in fig. 1, one end of a cylindrical graphite rod 2 is vertically arranged on the bottom surface of the crucible body 1, the other end is a free end, and the central axis of the graphite rod 2 and the central axis of the crucible body 1 are located on the same straight line, i.e. the graphite rod 2 is arranged at the central position of the accommodating cavity of the crucible body 1, so that the central axial region of the crucible body 1 can be prevented from forming a large amount of recrystallized polycrystalline silicon carbide regions, and the utilization rate of the growth raw materials can be maximally improved.
As another embodiment of the present invention, the diameter of the graphite rod 2 is 2/15-1/5 of the inner diameter of the crucible body 1. The graphite rod 2 is arranged in the crucible body 1, the diameter of the graphite rod 2 is 2/15-1/5 of the inner diameter of the crucible body 1, the temperature cold field can be avoided in the inner cavity of the crucible body 1 in the range, and the quantity of growth raw materials and the crystal growth quality are guaranteed.
As another embodiment of the present invention, the graphite rod 2 has a diameter of 20 to 30 mm. The diameter phi of the graphite rod is within the range of 20-30mm, so that the inner cavity of the crucible body 1 can be ensured to avoid a temperature cold field. The diameter of the graphite rod is too small, so that the effect is not obvious; too large a diameter will affect the amount of growth feedstock and the quality of the crystal growth.
As another embodiment of the present invention, the crucible body 1 is a graphite crucible, and the inner diameter of the crucible body 1 is 145-155 mm. Preferably, the graphite crucible has an inner diameter Φ of 150mm, and the graphite crucible of this size is mainly used for 4-inch crystal growth. Of course, the inner diameter of the crucible body 1 can be selected according to the growth requirements of different crystals, and is not particularly limited.
As another embodiment of the present invention, the height of the graphite rod 2 is 2/3 of the height of the accommodating chamber.
As shown in fig. 1, the graphite rod 2 preferably has a height 2/3 of the height of the receiving chamber. If the height of the graphite rod 2 is too high, the grown crystal is easy to jack the growth raw material part, so that the quality of the crystal is reduced; if the height of the graphite rod 2 is too low, the overall gas phase component transport and crystal size will be affected.
As shown in fig. 1, the height of the growth raw material region 3 is the same as the height of the graphite rod 2, and it is understood that the raw material powder surface in the growth raw material region 3 is located on the same plane as the top side surface of the graphite rod 2. If the surface of the growth raw material powder is higher than the top side of the graphite rod 2, the higher part of the powder is easy to form a polycrystalline region; if the growth feedstock powder surface is lower than the top side of the graphite rod 2, the raised portion of the graphite rod 2 affects the transport of gas phase components to the seed crystal.
In a preferred embodiment, the graphite rod 2 is provided as an integral structure with the crucible body 1. As shown in fig. 1, the graphite rod is connected with the bottom of the graphite crucible as a whole, and is customized by the design when the crucible is produced.
As another embodiment of the utility model, a crucible cover 4 is arranged at the opening of the crucible body 1; a silicon carbide seed crystal 5 is provided on the side of the crucible cover 4 facing the receiving cavity. As shown in fig. 1, a crucible cover 4 is provided at the opening of the crucible body 1 for sealing the crucible body 1; the silicon carbide seed crystal 5 is arranged on the inner side surface of the crucible cover 4, and when the crucible cover 4 is sealed at the opening of the crucible body 1, the silicon carbide seed crystal 5 is positioned inside the graphite crucible and at the upper part of the growth raw material region 3.
The utility model also discloses a silicon carbide crystal growing device, which comprises a heating device and the crucible for growing the silicon carbide crystal; the heating device comprises an electromagnetic induction coil which is arranged around the crucible body 1, so that the heating efficiency is improved, and the heating is more uniform.
In the above embodiment, as a preferable embodiment, the electromagnetic induction coil is provided around the crucible body 1; however, the relative position and arrangement of the electromagnetic induction coil and the crucible body 1 are not particularly limited, and can be adjusted accordingly according to actual needs.
The crucible for growing silicon carbide crystal and the technical effects thereof according to the present invention will be further described with reference to the following embodiments.
Example 1:
silicon carbide powder is contained in a growth raw material area 3, the height of the growth raw material area 3 is the same as that of the graphite rod 2, namely the surface of the silicon carbide powder and the side surface of the top of the graphite rod are positioned on the same plane; adopt electromagnetic induction coil to heat graphite crucible, graphite crucible's the surface and the surface of graphite rod because skin effect heats rapidly, for ordinary crucible, the utility model provides a crucible structure makes the heating of growth raw materials powder more even, has avoided middle zone's temperature cold field. In addition, in the crystal growth process, the middle area of the graphite crucible is occupied by the graphite rod, so that the waste of growth raw materials is reduced, and the formation of a middle polycrystalline structure of the growth raw materials is avoided.
In the present invention, the case of growing a crystal using the crucible for silicon carbide crystal growth of example 1 and the case of growing a crystal using the conventional crucible of the prior art are compared, as shown in Table 1 below.
TABLE 1
As can be seen from table 1, the utility model provides a silicon carbide crystal grows and uses crucible has special structure, and the ordinary crucible of comparing makes the raw materials powder that grows heat more evenly, has avoided middle zone's temperature cold field. In addition, in the crystal growth process, due to the special structure of the crucible for the growth of the silicon carbide crystal, the waste of growth raw materials is reduced, and the formation of a middle polycrystalline structure of the growth raw materials is avoided.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. The crucible for growing the silicon carbide crystals is characterized by comprising a crucible body (1) and a graphite rod (2), wherein the crucible body (1) is provided with a containing cavity, and the containing cavity is provided with a growth raw material area (3) for containing the growth raw materials of the silicon carbide crystals; the graphite rod (2) is arranged in the accommodating cavity, and at least part of the graphite rod (2) is positioned in the growth raw material zone (3); the height of the graphite rod (2) is 2/3 of the height of the containing cavity, and the diameter of the graphite rod (2) is 2/15-1/5 of the inner diameter of the crucible body (1).
2. The crucible for growing silicon carbide crystals according to claim 1, wherein one end of the graphite rod (2) is fixed to the bottom surface of the crucible body (1) and is arranged perpendicular to the bottom surface of the crucible body (1).
3. The crucible for growing silicon carbide crystals according to claim 2, wherein the graphite rod (2) has a cylindrical shape, and the central axis of the graphite rod (2) and the central axis of the crucible body (1) are located on the same straight line.
4. Crucible for growing silicon carbide crystals according to claim 1, characterized in that the graphite rod (2) has a diameter of 20-30 mm.
5. The crucible for growing silicon carbide crystals as claimed in claim 1, wherein the crucible body (1) is a graphite crucible, and the inner diameter of the crucible body (1) is 145-155 mm.
6. Crucible for growing silicon carbide crystals according to claim 1, characterized in that the height of the growth raw material zone (3) is the same as the height of the graphite rod (2).
7. The crucible for growing silicon carbide crystals according to claim 1, wherein the crucible body (1) is provided with a crucible cover (4) at the opening; and a silicon carbide seed crystal (5) is arranged on one side of the crucible cover (4) facing the containing cavity.
8. An apparatus for growing a silicon carbide crystal, comprising a heating device and a crucible for growing a silicon carbide crystal according to any one of claims 1 to 7; the heating device comprises an electromagnetic induction coil, and the electromagnetic induction coil is arranged around the crucible body (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921527970.1U CN210974929U (en) | 2019-09-12 | 2019-09-12 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
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| CN201921527970.1U CN210974929U (en) | 2019-09-12 | 2019-09-12 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113061985A (en) * | 2021-03-22 | 2021-07-02 | 哈尔滨化兴软控科技有限公司 | Method for improving crystal quality by adjusting carbon-silicon ratio distribution |
| CN113937259A (en) * | 2021-09-07 | 2022-01-14 | 惠州市贝特瑞新材料科技有限公司 | Preparation method and device of silicon monoxide for lithium ion battery and lithium ion battery |
| CN114059163A (en) * | 2021-11-17 | 2022-02-18 | 宁波合盛新材料有限公司 | Silicon carbide crystal growth crucible and growth method |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
| CN114645318A (en) * | 2022-03-16 | 2022-06-21 | 齐鲁工业大学 | Crucible device for improving material transmission efficiency and application thereof |
| CN115386957A (en) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | High-quality silicon carbide crystal growth crucible |
| CN116555898A (en) * | 2022-07-01 | 2023-08-08 | 浙江晶越半导体有限公司 | Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof |
| CN116815303A (en) * | 2023-06-28 | 2023-09-29 | 通威微电子有限公司 | Crucible, combined crucible, crystal growing device and method |
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- 2019-09-12 CN CN201921527970.1U patent/CN210974929U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113061985A (en) * | 2021-03-22 | 2021-07-02 | 哈尔滨化兴软控科技有限公司 | Method for improving crystal quality by adjusting carbon-silicon ratio distribution |
| CN113061985B (en) * | 2021-03-22 | 2022-06-28 | 哈尔滨化兴软控科技有限公司 | Method for improving crystal quality by adjusting carbon-silicon ratio distribution |
| CN113937259A (en) * | 2021-09-07 | 2022-01-14 | 惠州市贝特瑞新材料科技有限公司 | Preparation method and device of silicon monoxide for lithium ion battery and lithium ion battery |
| CN114059163A (en) * | 2021-11-17 | 2022-02-18 | 宁波合盛新材料有限公司 | Silicon carbide crystal growth crucible and growth method |
| CN114645318A (en) * | 2022-03-16 | 2022-06-21 | 齐鲁工业大学 | Crucible device for improving material transmission efficiency and application thereof |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
| CN116555898A (en) * | 2022-07-01 | 2023-08-08 | 浙江晶越半导体有限公司 | Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof |
| CN115386957A (en) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | High-quality silicon carbide crystal growth crucible |
| CN116815303A (en) * | 2023-06-28 | 2023-09-29 | 通威微电子有限公司 | Crucible, combined crucible, crystal growing device and method |
| CN116815303B (en) * | 2023-06-28 | 2024-03-12 | 通威微电子有限公司 | Crucible, combined crucible, crystal growing device and method |
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