CN206266235U - A kind of device for quickly preparing SiC powders - Google Patents
A kind of device for quickly preparing SiC powders Download PDFInfo
- Publication number
- CN206266235U CN206266235U CN201621345265.6U CN201621345265U CN206266235U CN 206266235 U CN206266235 U CN 206266235U CN 201621345265 U CN201621345265 U CN 201621345265U CN 206266235 U CN206266235 U CN 206266235U
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- China
- Prior art keywords
- graphite crucible
- furnace chamber
- sic powders
- graphite
- crucible
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Abstract
For the above-mentioned problems in the prior art, the utility model provides a kind of device for quickly preparing SiC powders, including：Infrared radiation thermometer, upper lid, lower cover, pulling apparatus, air inlet, synthesis furnace chamber, secondary furnace chamber, gas outlet, induction heating apparatus, graphite crucible and the insulation material being enclosed in outside graphite crucible, wherein, the pulling apparatus could alternatively be height adjustable type tray.By using pulling apparatus or height adjustable type tray, it is possible to achieve crucible fast cooling after powder synthesis, so that, improve the utilization rate of SiC powders combined coefficient and equipment.
Description
Technical field
The utility model is related to a kind of high-frequency element application field, relates generally to a kind of for quickly preparing SiC powders
Device.
Background technology
As a member of third generation wide bandgap semiconductor materials, relative to the semi-conducting materials such as common Si and GaAs, carbonization
Silicon materials have that energy gap is big, carrier saturation migration velocity is high, and it is many excellent that thermal conductivity is high, critical breakdown strength is high etc.
Property.Based on these excellent characteristics, carbofrax material is that to prepare high-temperature electronic device, high frequency, high power device even more ideal
Material.Particularly under extreme condition and mal-condition using when, the characteristic of SiC device is considerably beyond Si devices and GaAs
Device.SiC another kinds semiconductor material with wide forbidden band GaN best backing material simultaneously, the GaN base prepared using SiC substrate is white
Light LED luminous efficiencies are far above traditional Si and Sapphire Substrate.Physical vapor transport method（PVT）It is that to prepare SiC at present mono-
Brilliant the most commonly used method, its general principle realizes SiC single crystal for SiC powder sublimation-grown component deposition growings on seed crystal
Growth；
At present, the method prepared for the powder of SiC single crystal growth is that to carry out self- propagating using Si powder and C powder mixtures anti-
Should synthesize, the use of the method synthesis temperature need to be higher than the firing temperature of above-mentioned self-propagating reaction（About 1200 DEG C）, to fill reaction
Dividing is carried out, it will usually using the temperature synthesis for being not less than 1800 DEG C, after the completion of powder synthesis, carrying out the synthesis of next heat
Before need to wait for crucible temperature and be reduced to room temperature.But, conventional synthesizer in temperature-fall period, because crucible cannot be with thermal insulating material
Material departs from, and insulation material is still wrapped up in crucible outside makes cooling rate slower, and this can consume substantial amounts of temperature fall time, thus, cause
SiC powder combined coefficienies are low and synthesizer utilization rate low problem.Therefore, how to design a kind of combined coefficient it is high, drop
The fireballing device for preparing SiC powders of temperature, as current urgent need to solve the problem.
Utility model content
For the above-mentioned problems in the prior art, the utility model provides a kind of for quick preparation SiC powders
Device, by using pulling apparatus or height adjustable type tray, it is possible to achieve powder synthesis after crucible fast cooling so that, carry
The utilization rate of SiC powders combined coefficient high and equipment.
In order to solve the above technical problems, the technical solution adopted in the utility model is：
A kind of device for quickly preparing SiC powders, it is characterised in that including：Infrared radiation thermometer, upper lid, lower cover, carry
Drawing device, air inlet, synthesis furnace chamber, secondary furnace chamber, gas outlet, induction heating apparatus, graphite crucible and it is enclosed in graphite crucible
The insulation material of outer wall, wherein, the secondary furnace chamber is hollow structure, is arranged on the surface of the synthesis furnace chamber, the secondary stove
The diameter with diameter greater than the graphite crucible of room, the height of the height more than the graphite crucible of the secondary furnace chamber, the pair
Furnace chamber is used to carry out the graphite crucible overall cooling treatment；The pulling apparatus are arranged on the centre position of the upper lid,
Bottom is connected with the top of the graphite crucible to be detachably fixed, for lifting the graphite crucible in the vertical direction movement
To the secondary furnace chamber；The infrared radiation thermometer, the temperature for measuring the graphite crucible；The graphite crucible, is placed on institute
The inside of synthesis furnace chamber is stated, for the growth of SiC crystal；The induction heating apparatus, is arranged on the outside of the synthesis furnace chamber,
For heating the synthesis furnace chamber.
Further, the pulling apparatus are the lifting rod of hollow structure, and the lifting rod top is provided with delivery port and enters
The mouth of a river, for being passed through for cooling water.
Further, transparent temperature measuring window, the insulation material at the top of the graphite crucible are provided with the top of the lifting rod
Thermometer hole is provided with, for connecting the infrared radiation thermometer with the graphite crucible；The infrared radiation thermometer, for catching the stone
The infrared light that black crucible top gives off measures the temperature at the top of the graphite crucible.
Further, the bottom of the pulling apparatus is provided with graphite lifting head, the graphite lifting head and the graphite earthenware
Carry out being detachably fixed connection at the top of crucible.
Further, the connected mode that is detachably fixed at the pulling apparatus and the top of the graphite crucible, including but
It is not limited by threaded connection.
Further, the pulling apparatus could alternatively be height adjustable type tray, and the height adjustable type tray is fixedly mounted on institute
The bottom of graphite crucible is stated, for the graphite crucible to be pushed into the secondary furnace chamber.
Further, a temperature measuring window is provided with the middle of the upper lid, the graphite earthenware is caught for the infrared radiation thermometer
The infrared light that crucible overhead radiation goes out measures the temperature at the top of the graphite crucible.
Further, the secondary furnace chamber is provided with water channel, water inlet and delivery port, for being passed through for cooling water.
Further, the insulation material is graphite felt.
Further, also it is connected with the gas outlet including vavuum pump.
The beneficial effects of the utility model are as follows：
For the above-mentioned problems in the prior art, the utility model provides a kind of for quick preparation SiC powders
Device, by using pulling apparatus or height adjustable type tray, it is possible to achieve powder synthesis after crucible fast cooling so that, carry
The utilization rate of SiC powders combined coefficient high and equipment.
Brief description of the drawings
Fig. 1 is the generalized section comprising pulling apparatus of the present utility model.
Fig. 2 is the structural representation comprising pulling apparatus of the present utility model.
Fig. 3 is the structural representation comprising height adjustable type tray of the present utility model.
Wherein, 1, infrared radiation thermometer, 2, pulling apparatus, 3, upper lid, 4, secondary furnace chamber, 5, furnace wall, 6, load coil, 7,
Side and bottom insulation material, 8, graphite crucible, 9, powder, 10, top insulation material, 11, gas outlet, 12, air inlet, 13,
The delivery port of pulling apparatus, 14, the water inlet of pulling apparatus, 15, the water inlet of secondary furnace chamber, 16, the delivery port of secondary furnace chamber, 17,
Graphite lifting head, 18, side temperature window, 19, height adjustable type tray, 20, fixed tray, 21, lower cover.
Specific embodiment
In order that those skilled in the art more fully understand the technical solution of the utility model, with reference to specific embodiment
The utility model is described in further detail.The embodiments described below is exemplary, is only used for explaining that this practicality is new
Type, and it is not intended that to limitation of the present utility model.
For the above-mentioned problems in the prior art, the utility model provides a kind of for quick preparation SiC powders
Device, by using pulling apparatus or height adjustable type tray, it is possible to achieve powder synthesis after crucible fast cooling so that, carry
The utilization rate of SiC powders combined coefficient high and equipment.
The utility model provides a kind of device for quickly preparing SiC powders, as shown in figure 1, including：Infrared measurement of temperature
Instrument 1, upper lid 3, lower cover 21, pulling apparatus 2, air inlet 12, synthesis furnace chamber, secondary furnace chamber 4, gas outlet 11, induction heating apparatus 6,
Graphite crucible 8 and the insulation material being enclosed in outside graphite crucible, the secondary furnace chamber are whole for being carried out to the graphite crucible
Body cooling is processed；The pulling apparatus, the secondary furnace chamber is moved to for lifting the graphite crucible in the vertical direction；It is described
Infrared radiation thermometer, the temperature for measuring the graphite crucible；The graphite crucible, is placed on the inside of the synthesis furnace chamber,
For the growth of SiC crystal；The induction heating apparatus 6, is arranged on the outside of the synthesis furnace chamber, for heating the synthesis
Furnace chamber.
According to specific embodiment of the utility model, as shown in figure 1, the secondary furnace chamber is hollow structure, it is arranged on described
Synthesize the surface of furnace chamber, for carrying out overall cooling treatment to the graphite crucible.It is specific according to the utility model
Embodiment, the diameter with diameter greater than the graphite crucible of the secondary furnace chamber, the height of the secondary furnace chamber is more than the graphite earthenware
The height of crucible, cooling treatment is carried out in order to the graphite crucible is integrally placed into inside the secondary furnace chamber；The secondary furnace chamber
Water channel, water inlet 15 and delivery port 16 are provided with, for being passed through for cooling water.Thus, it is possible to realize the graphite after powder synthesis
Crucible fast cooling, so that, improve the utilization rate of SiC powders combined coefficient and equipment.
According to specific embodiment of the utility model, as illustrated in fig. 1 and 2, the pulling apparatus, for lifting the graphite
Crucible in the vertical direction is moved to the secondary furnace chamber.According to specific some embodiments of the utility model, the pulling apparatus
Installed in the centre position of the upper lid, bottom is connected with the top of the graphite crucible to be detachably fixed；Further, institute
The bottom for stating pulling apparatus is provided with graphite lifting head 17, is carried out detachably at the top of the graphite lifting head and the graphite crucible
It is fixedly connected.Preferably, the connected mode that is detachably fixed at the pulling apparatus and the top of the graphite crucible, including but not
It is limited by threaded connection.According to specific some embodiments of the utility model, as shown in Fig. 2 the pulling apparatus are hollow
The lifting rod of structure, the lifting rod top is provided with delivery port 13 and water inlet 14, for being passed through for cooling water.Thus, it is possible to
The graphite crucible fast cooling after powder synthesis is realized, so that, improve the utilization rate of SiC powders combined coefficient and equipment.
According to specific embodiment of the utility model, raw material 9 is placed in the bottom of the graphite crucible, and the graphite crucible leads to
The fixed form for crossing threaded connection is fixedly connected with the graphite lifting head of the pulling apparatus.After SiC powders 9 synthesize, start
Lift the pulling apparatus upwards along vertical direction, the graphite crucible is moved up as the lifting rod is moved, directly
The secondary furnace chamber is entered into the whole graphite crucible, so that, the fast cooling of the graphite crucible is realized, improve SiC
The utilization rate of powder combined coefficient and equipment.
According to specific embodiment of the utility model, as illustrated in fig. 1 and 2, the infrared radiation thermometer, for measuring the stone
The temperature of black crucible.According to specific some embodiments of the utility model, transparent temperature measuring window is provided with the top of the lifting rod
18, the insulation material at the top of the graphite crucible is provided with thermometer hole, for connecting the infrared radiation thermometer with the graphite crucible；
The infrared radiation thermometer, measures at the top of the graphite crucible for catching infrared light that the graphite crucible overhead radiation goes out
Temperature.
According to specific embodiment of the utility model, it is a kind of for quickly preparing SiC powders that the utility model is provided
Device, also including induction heating apparatus, insulation material and vavuum pump, wherein, induction heating apparatus, including load coil 6,
The load coil 6 evenly around the synthetic furnace furnace wall 5, for heating to synthetic furnace, and then
Realization carries out sensing heating to the graphite crucible；The insulation material, for carrying out isothermal holding to the graphite crucible；Institute
Vavuum pump is stated, is connected with the gas outlet.According to specific some embodiments of the utility model, the insulation material is arranged on
The side of the graphite crucible, top and bottom, are divided into side and bottom insulation material 7,10 two parts of top insulation material,
Be conducive to the isothermal holding of the graphite crucible；Preferably, the insulation material is graphite felt.Thus, graphite crucible can be protected
The SiC powders are demonstrate,proved to be in an environment for temperature stabilization, so that, improve the utilization of SiC powders combined coefficient and equipment
Rate, reduces energy consumption.
Meanwhile, the utility model additionally provides a kind of device for quickly preparing SiC powders, as shown in figure 3, including：
Infrared radiation thermometer, upper lid, lower cover, height adjustable type tray 19, air inlet, synthesis furnace chamber, secondary furnace chamber, gas outlet, induction heating apparatus,
Graphite crucible and the insulation material being enclosed in outside graphite crucible, the secondary furnace chamber are whole for being carried out to the graphite crucible
Body cooling is processed；The height adjustable type tray, for making the graphite crucible in the vertical direction be moved to the secondary furnace chamber；It is described
Infrared radiation thermometer, the temperature for measuring the graphite crucible；The graphite crucible, is placed on the inside of the synthesis furnace chamber,
For the growth of SiC crystal；The induction heating apparatus 6, is arranged on the outside of the synthesis furnace chamber, for heating the synthesis
Furnace chamber.
According to specific embodiment of the utility model, as shown in figure 3, the pulling apparatus could alternatively be height adjustable type tray
19, for the graphite crucible to be pushed into the secondary furnace chamber.It is described to rise according to specific some embodiments of the utility model
Drop pallet is fixedly mounted on the bottom of the graphite crucible, and the graphite crucible in the vertical direction enters after can synthesizing to powder
Row movement, so that, it is capable of achieving the graphite crucible after powder is synthesized and moves to the secondary furnace chamber, the graphite crucible is carried out whole
Body is lowered the temperature.It is a kind of for the quick device for preparing SiC powders that the utility model is provided, also including fixed tray 20, for solid
Surely the insulation material is connected.According to specific embodiment of the utility model, the fixed tray is fixedly connected on the lower cover
On, for being fixedly connected the insulation material.Mesopore is equipped with the middle part of the fixed tray and the lower cover, for placing
The pull bar part of removable pallet is stated, so that, the removable pallet is realized along being moved on vertical direction.Thus,
The graphite crucible fast cooling after powder synthesis can be realized, so that, improve the utilization of SiC powders combined coefficient and equipment
Rate.
According to specific embodiment of the utility model, raw material 9 is placed in the bottom of the graphite crucible, the height adjustable type tray
It is fixedly mounted on the bottom of the graphite crucible.After SiC powders 9 synthesize, start along vertical direction push up it is described can
Lifting tray, the graphite crucible is moved up as the height adjustable type tray is moved, until the whole graphite crucible enters
Enter to the secondary furnace chamber, so that, the fast cooling of the graphite crucible is realized, improve SiC powders combined coefficient and equipment
Utilization rate.
According to specific embodiment of the utility model, as shown in figure 3, the secondary furnace chamber is hollow structure, it is arranged on described
Synthesize the surface of furnace chamber, for carrying out overall cooling treatment to the graphite crucible.It is specific according to the utility model
Embodiment, the diameter with diameter greater than the graphite crucible of the secondary furnace chamber, the height of the secondary furnace chamber is more than the graphite earthenware
The height of crucible, cooling treatment is carried out in order to the graphite crucible is integrally placed into inside the secondary furnace chamber；The secondary furnace chamber
Water channel, water inlet and delivery port are provided with, for being passed through for cooling water.Thus, it is possible to realize the graphite crucible after powder synthesis
Fast cooling, so that, improve the utilization rate of SiC powders combined coefficient and equipment.
According to specific embodiment of the utility model, as shown in figure 3, one kind that the utility model is provided is used for quick preparation
The device of SiC powders, also including induction heating apparatus, insulation material and vavuum pump, wherein, induction heating apparatus, for institute
Stating graphite crucible carries out sensing heating；The insulation material, for carrying out isothermal holding to the graphite crucible；The vacuum
Pump, is connected with the gas outlet.According to specific some embodiments of the utility model, a temperature measuring window is provided with the middle of the upper lid
18, for the infrared radiation thermometer infrared light that the graphite crucible overhead radiation goes out is caught to measure the graphite crucible top
Temperature；The insulation material, is arranged on side, the top and bottom of the graphite crucible, is conducive to the graphite crucible
Isothermal holding；Preferably, the insulation material is graphite felt.Thus, graphite crucible ensure that the SiC powders are in one
In the environment of temperature stabilization, so that, the utilization rate of SiC powders combined coefficient and equipment is improved, reduce energy consumption.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example are described
Structure, material or feature are contained at least one embodiment of the present utility model or example.In this manual, to above-mentioned art
The schematic representation of language is not necessarily referring to identical embodiment or example.And, the specific features of description, structure, material or
Person's feature can in an appropriate manner be combined in one or more any embodiments or example.
While there has been shown and described that embodiment of the present utility model, it will be understood by those skilled in the art that：
In the case where principle of the present utility model and objective is not departed from various changes, modification, replacement can be carried out to these embodiments
And modification, scope of the present utility model limits by claim and its equivalent.
Claims (10)
1. a kind of for the quick device for preparing SiC powders, it is characterised in that including：Infrared radiation thermometer, upper lid, lower cover, lifting
Device, air inlet, synthesis furnace chamber, secondary furnace chamber, gas outlet, induction heating apparatus, graphite crucible and it is enclosed in outside graphite crucible
The insulation material of wall, wherein, the secondary furnace chamber is hollow structure, is arranged on the surface of the synthesis furnace chamber, the secondary furnace chamber
The diameter with diameter greater than the graphite crucible, the height of the secondary furnace chamber more than the graphite crucible height, the secondary stove
Room is used to carry out the graphite crucible overall cooling treatment；The pulling apparatus are arranged on the centre position of the upper lid, bottom
Portion is connected with the top of the graphite crucible to be detachably fixed, and is moved to for lifting the graphite crucible in the vertical direction
The secondary furnace chamber；The infrared radiation thermometer, the temperature for measuring the graphite crucible；The graphite crucible, is placed on described
Synthesize the inside of furnace chamber, for the growth of SiC crystal；The induction heating apparatus, is arranged on the outside of the synthesis furnace chamber, uses
In the heating synthesis furnace chamber.
2. it is as claimed in claim 1 a kind of for the quick device for preparing SiC powders, it is characterised in that the pulling apparatus
It is the lifting rod of hollow structure, the lifting rod top is provided with delivery port and water inlet, for being passed through for cooling water.
3. it is as claimed in claim 2 a kind of for the quick device for preparing SiC powders, it is characterised in that the lifting rod
Top is provided with transparent temperature measuring window, and the insulation material at the top of the graphite crucible is provided with thermometer hole, for connecting the infrared survey
Graphite crucible described in Wen Yiyu；The infrared radiation thermometer, surveys for catching infrared light that the graphite crucible overhead radiation goes out
Measure the temperature at the top of the graphite crucible.
4. it is as claimed in claim 1 a kind of for the quick device for preparing SiC powders, it is characterised in that the pulling apparatus
Bottom be provided with graphite lifting head, the graphite lifting head with the top of the graphite crucible be detachably fixed being connected.
5. it is as claimed in claim 1 a kind of for the quick device for preparing SiC powders, it is characterised in that the pulling apparatus
Connected mode is detachably fixed with the top of the graphite crucible, includes but is not limited to be connected through a screw thread.
6. it is as claimed in claim 1 a kind of for the quick device for preparing SiC powders, it is characterised in that the pulling apparatus
Height adjustable type tray is could alternatively be, the height adjustable type tray is fixedly mounted on the bottom of the graphite crucible, for by the stone
Black crucible is pushed into the secondary furnace chamber.
7. it is as claimed in claim 6 a kind of for the quick device for preparing SiC powders, it is characterised in that in the middle of the upper lid
A temperature measuring window is provided with, the infrared light gone out for the infrared radiation thermometer seizure graphite crucible overhead radiation is described to measure
Temperature at the top of graphite crucible.
8. it is a kind of for the quick device for preparing SiC powders as described in claim any one of 1-7, it is characterised in that described
Secondary furnace chamber is provided with water channel, water inlet and delivery port, for being passed through for cooling water.
9. it is a kind of for the quick device for preparing SiC powders as described in claim any one of 1-7, it is characterised in that described
Insulation material is graphite felt.
10. it is a kind of for the quick device for preparing SiC powders as described in claim any one of 1-7, it is characterised in that also to wrap
Vavuum pump is included, is connected with the gas outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345265.6U CN206266235U (en) | 2016-12-09 | 2016-12-09 | A kind of device for quickly preparing SiC powders |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345265.6U CN206266235U (en) | 2016-12-09 | 2016-12-09 | A kind of device for quickly preparing SiC powders |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206266235U true CN206266235U (en) | 2017-06-20 |
Family
ID=59043686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621345265.6U Expired - Fee Related CN206266235U (en) | 2016-12-09 | 2016-12-09 | A kind of device for quickly preparing SiC powders |
Country Status (1)
| Country | Link |
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| CN (1) | CN206266235U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108046267A (en) * | 2018-01-08 | 2018-05-18 | 河北同光晶体有限公司 | A kind of system and method for synthesizing high-purity alpha-SiC powder |
| CN110201732A (en) * | 2019-06-26 | 2019-09-06 | 东北大学 | Crucible is used in a kind of experiment of high temperature |
| CN113637953A (en) * | 2021-08-06 | 2021-11-12 | 苏州步科斯新材料科技有限公司 | Rapidly-cooled silicon carbide coating deposition device and application method |
-
2016
- 2016-12-09 CN CN201621345265.6U patent/CN206266235U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108046267A (en) * | 2018-01-08 | 2018-05-18 | 河北同光晶体有限公司 | A kind of system and method for synthesizing high-purity alpha-SiC powder |
| CN108046267B (en) * | 2018-01-08 | 2020-08-21 | 河北同光晶体有限公司 | System and method for synthesizing high-purity SiC powder |
| CN110201732A (en) * | 2019-06-26 | 2019-09-06 | 东北大学 | Crucible is used in a kind of experiment of high temperature |
| CN113637953A (en) * | 2021-08-06 | 2021-11-12 | 苏州步科斯新材料科技有限公司 | Rapidly-cooled silicon carbide coating deposition device and application method |
| CN113637953B (en) * | 2021-08-06 | 2023-09-01 | 苏州步科斯新材料科技有限公司 | Rapid cooling silicon carbide coating deposition device and use method |
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