CN205990463U - A kind of thermal field for aluminum nitride crystal growth stove - Google Patents
A kind of thermal field for aluminum nitride crystal growth stove Download PDFInfo
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- CN205990463U CN205990463U CN201621054999.9U CN201621054999U CN205990463U CN 205990463 U CN205990463 U CN 205990463U CN 201621054999 U CN201621054999 U CN 201621054999U CN 205990463 U CN205990463 U CN 205990463U
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Abstract
The utility model discloses a kind of thermal field for aluminum nitride crystal growth stove, growth furnace includes body of heater, is arranged in the support bar of lower portion of furnace body, thermal field include crucible above support bar, heat-shield mechanism, be vertically sequentially distributed in body of heater for the multisection type heating arrangements that crucible is heated, heat-shield mechanism includes the first heat screen above crucible, the second heat screen between crucible and support bar, is located on the 3rd heat screen outside crucible, the 4th heat screen being located between the 3rd heat screen and inboard wall of furnace body.A kind of thermal field for aluminum nitride crystal growth stove of this utility model, using tungsten and boron nitride material, effectively avoids the oxygen impurities and carbon impurity impurity effect to crystal growth in graphite field；By arranging multisection type heating arrangements, can be with the temperature on flexible modulation crucible top and bottom；By the support bar of setting activity, the not only thermograde of conveniently regulating and controlling crystal growth, and conveniently can take out crucible, and then clear up furnace chamber.
Description
Technical field
This utility model is related to a kind of thermal field for aluminum nitride crystal growth stove.
Background technology
Conductor material is widely used in the fields such as integrated circuit, LED field, military affairs, communication, partly leads as forth generation is new
Body material, aluminium nitride has broad stopband（6.2ev）, high heat conductance, high electronics saturation mobility, high breakdown field strength, radioprotective etc.
Performance, is applied at present manufacture the electronic devices such as high power, high frequency, shines in Aero-Space, seafari, ultra-violet curing, solid
The field such as bright has great application prospect.
Aluminum-nitride single crystal manufacturing process difficulty is very big, especially large-sized high quality single crystal piece.Conventional preparation nitridation
Aluminum single-crystal techniques are to adopt physical vapor transport（PVT method）, its working environment is extremely harsh：Low pressure, high temperature（Take the photograph up to 2400
Family name's degree）, crystal growth time length, stability requirement height etc..It is high-quality therefore to grow that size is big, defect is few, performance is good etc.
Monocrystalline substrate material process specifications are very high.The key factor of wherein impact crystal defect is exactly to grow temperature field in furnace to divide
Cloth is uneven to be caused, and result is likely to result in that heterogeneity phantom in crucible is equal, axial-temperature gradient is unstable.
During aluminum nitride crystal growth, condition is harsh, and thermal field plays very crucial effect.Current frequently with graphite
Thermal field, can introduce many impurity such as oxygen, carbon etc. due to insulation problem and using graphite material, and impurity can pollute crystal, and impact is brilliant
Weight.And graphite field system conversion is more frequent, increases cost.Therefore, the new thermal field of research design is high-quality for growing
Amount, reducing energy consumption, reduces cost are most important.
Utility model content
The purpose of this utility model is to provide a kind of thermal field for aluminum nitride crystal growth stove, it is possible to obtain reasonable layout
Temperature field, and greatly reduce introduce impurity probability.
For reaching above-mentioned purpose, the technical solution adopted in the utility model is：
A kind of thermal field for aluminum nitride crystal growth stove, described growth furnace includes body of heater, is arranged in described lower portion of furnace body
Support bar, the support ring in described body of heater, in described body of heater, described thermal field includes described thermal field：
Crucible above described support bar；
Heat-shield mechanism, described heat-shield mechanism includes the first heat screen above described crucible, located at described crucible and
The second heat screen between described support bar, the 3rd heat screen in described support ring and the 4th heat screen, the described 3rd
Heat screen is located on outside described crucible, described 4th heat screen is located on described 3rd heat screen and described inboard wall of furnace body it
Between；
Vertically be sequentially distributed in described body of heater for the multisection type heating arrangements that described crucible is heated.
Preferably, described multisection type heating arrangements are sensing heating mechanism, and described sensing heating mechanism is included located at described
The heater being located between described crucible and described 3rd heat screen in support ring, the epimere sensing heating line being distributed up and down
Circle and hypomere load coil, described epimere load coil and described hypomere load coil are all located on described the
Between four heat screens and described inboard wall of furnace body.
It is highly preferred that described crucible includes in cylindrical and opening up body, is covered on lid above described body
Body, the height of described lid is identical with the height of described heater.
It is further preferred that described lid is bullet, the internal diameter of described body is 60mm, and the height of described body is
110mm, the bevel angle of described lid is 60 °, and the thickness of described crucible is 2mm.
It is highly preferred that described support bar up and down in described body of heater, described support bar top is provided with for holding in the palm
Play the support plate of described crucible and described heater.
It is highly preferred that described heater, described crucible and described support bar are all made using tungsten.
Preferably, described multisection type heating arrangements are resistive heating mechanism, and described resistive heating mechanism includes two sections or two
The above adding thermal resistance being distributed up and down of section, described adding thermal resistance is outside described crucible.
Preferably, described first heat screen, described second heat screen, described 3rd heat screen are tungsten heat shielding.
It is highly preferred that the thickness of described tungsten heat shielding is 0.3mm, described second heat screen has six layers, its between any two away from
From for 5-7mm；Described 3rd heat screen has four layers, and its distance between any two is 5-7mm.
Preferably, described 4th heat screen is boron nitride heat shielding, and the thickness of described boron nitride heat shielding is 1.3mm, described the
Four heat screens have four layers, and its distance between any two is 5mm.
Due to the utilization of technique scheme, this utility model compared with prior art has following advantages：This practicality is new
A kind of thermal field for aluminum nitride crystal growth stove of type, using tungsten and boron nitride material, can be prevented effectively from oxygen in graphite field
The impurity and carbon impurity impurity effect to crystal growth；By arranging multisection type heating arrangements, can be with flexible modulation crucible top
Temperature with bottom；By the support bar of setting activity, the not only thermograde of conveniently regulating and controlling crystal growth, and can facilitate
Take out crucible, and then clear up furnace chamber.
Brief description
Accompanying drawing 1 is the sectional view of this utility model thermal field；
Accompanying drawing 2 is the temperature profile in body of heater.
Wherein：1st, body of heater；2nd, epimere load coil；3rd, hypomere load coil；4th, support ring；5th, the 4th is heat-insulated
Screen；6th, the 3rd heat screen；7th, the first heat screen；8th, the second heat screen；9th, heater；10th, crucible；11st, support bar.
Specific embodiment
Come below in conjunction with the accompanying drawings the technical solution of the utility model is further elaborated.
Shown in Figure 1, a kind of growth furnace of PVT method growing aluminum nitride crystal, including body of heater 1, move up and down wear
In support bar 11, the support ring 4 in this body of heater 1 of this body of heater 1 bottom surface, above-mentioned thermal field is in this body of heater 1.This growth furnace
Also include furnace wall, in this furnace wall, be provided with the pipeline being passed through cooling water for circulation.By being passed through cooling water in furnace wall, can in case
Only internal heterogeneity phantom causes furnace wall temperature too high.
This thermal field includes the crucible 10 located at support bar 11 top, and this crucible 10 is included in cylindrical and opening up basis
Body, it is covered on lid above this body.In the present embodiment, this lid is bullet, and the internal diameter of this body is 60mm, this
The height of body is 110mm, and the bevel angle of this lid is 60 °, and the thickness of this crucible 10 is 2mm.
This thermal field also include being located on the heater 9 in this crucible 10 outside week portion, above this crucible 10 first every
Heat shielding 7, located at the second heat screen 8 between this crucible 10 and this support bar 11, this first heat screen 7 and this second heat screen 8
It is circle；This first heat screen 7 is provided with opening, prevent support bar 11 drive crucible 10 conflict when moving upwards this first every
Heat shielding 7.When the first heat screen 7 has multilamellar, this opening is wedge angle taper directed downwardly.The top of this lid and this heater 9
Top flushes.This heater 9 is cylinder.
This support bar 11 top is provided with the support plate for holding up crucible 10 and heater 9, and heater 9 is contacted with support plate
Mode, using separately foot, its purpose is to reduce contact area, it is to avoid substantial amounts of heat is passed to by heater 9 by support plate
Support bar 11, causes energy consumption to increase.The rising or falling speed of this support bar 11 can be adjusted within the scope of two, is 0.06- respectively
0.6mm/h and 0-750mm/h.
This thermal field also includes multisection type heating arrangements in this body of heater 1, in the present embodiment, this multisection type heating arrangements
For sensing heating mechanism.This sensing heating mechanism includes the epimere load coil 2 being distributed up and down and hypomere sensing heating line
Circle 3, epimere load coil 2 and hypomere load coil 3 are all twist set around the outside week portion of heater 9, on
It is provided with magnetic shield isolation between section load coil 2 and hypomere load coil 3.Sensing heating mechanism and heater 9 it
Between gap distribution.Epimere load coil 2 can be with heating crucible 10 top, and its induction heating power is 10KW, and hypomere senses
Heating coil 3 can be with heating crucible 10 bottom, and its induction heating power is 20KW.Two sections formula sensing heating mechanism can basis
Needs are flexibly matched with, and are easy to precise control various production temperature and process conditions.
Start when heating up, can first heating crucible 10 top, it is to avoid powder source generates a large amount of polycrystalline nucleus at crucible 10 lid, so
Heating crucible 10 bottom more afterwards.When closing cooling, close hypomere load coil 3 power supply, retain epimere load coil 2
Power supply slow cooling, can be prevented effectively from the stress concentration producing due to cooling.
This multisection type heating arrangements can also be resistive heating mechanism, in another embodiment, this resistive heating mechanism
Including about the three sections adding thermal resistances being distributed, this adding thermal resistance outside crucible 10, be respectively used to heating crucible 10 top, in
Portion and bottom.
This thermal field also includes the heat-shield mechanism between sensing heating mechanism and heater 9.This heat-shield mechanism is supported on
Support ring 4 top, this heat-shield mechanism includes being located on the 3rd heat screen 6 in heater 9 outside week portion, is located on the 3rd heat screen
The 4th heat screen 5 between 6 and sensing heating mechanism.3rd heat screen 6 and the 4th heat screen 5 are cylinder.Sensing
During heating arrangements energising, vortex induction heater 9, heater 9 radiant heat transfer to crucible 10, by arrange the first heat screen 7, the
Two heat screens 8, the 3rd heat screen 6 and the 4th heat screen 5 can be thermally shielded to crucible 10 to a certain extent.
Due to up to more than 3000 degrees Celsius of the fusing point of tungsten and boron nitride, it is not easily introduced impurity, surface reflectivity is high, insulation
Effect is good.Therefore, in the present embodiment, the first heat screen 7, the second heat screen 8, the 3rd heat screen 6 are the tungsten that surface polishes
Heat shielding；4th heat screen 5 is boron nitride heat shielding.Heater 9, crucible 10, support bar 11 and support plate are all made using tungsten.
In the present embodiment, the thickness of tungsten heat shielding is 0.3mm.Second heat screen 8 has six layers, 8 liang of six layer of second heat screen
The distance between two is 5-7mm；3rd heat screen 6 has four layers, and four layer of the 3rd heat screen 6 distance between any two is 5-7mm, the
Three heat screen 6, using separately hexagonal angle degree, staggered arrangement, is prevented effectively from magnetic induction.The number of plies of the first heat screen 7 and gap are permissible
Voluntarily adjust as needed.
The thickness of boron nitride heat shielding is 1.3mm.4th heat screen 5 has four layers, four layer of the 4th heat screen 5 between any two away from
From for 5mm.
Fig. 2 is to be simulated emulation by simulation softward to the temperature field in body of heater 1, analyzes the temperature in whole body of heater 1
, and the temperature value of each insulation material.The design of this thermal field be can be seen that by this analog data and substantially meet preferable reality
Test cond.The axial temperature extracting in crucible 10 is poor, and at a temperature of different heating, scope can reach temperature difference：20-
150 degrees Celsius.
Illustrate the work process of lower the present embodiment in detail below：
During work, only can start hypomere load coil 3 vortex induction heater 9, heater 9 radiant heat transfer is to earthenware
Crucible 10.After the powder source in crucible 10 distils, using in crucible 10, as driving force, the gas powder of distillation is deposited on axial-temperature gradient
Lid top, by the design of taper lid, not only can be placed in lid top it is also possible to clamp the little seed crystal of granule by spontaneous nucleation
End.
When needing to start epimere load coil 2 and hypomere load coil 3 intensification, first turn on epimere sensing
By monitoring temperature measuring equipment, heating coil 2, then delayed start-up hypomere load coil 3, ensure that crucible 10 head temperature is higher than
50 degrees Celsius of crucible 10 bottom.Progressively it is warmed up to 2200 degrees Celsius, powder source stably distils, close epimere load coil 2.Long
When crystalline substance is lowered the temperature after terminating, open epimere load coil 2, the temperature on crucible 10 top when being warming up to stable long brilliant.And then,
Close hypomere load coil 3.Last slow cooling, until close epimere load coil 2.
When experiment proceeds to stable crystal growing stage, now temperature stabilization, pressure stability.Support bar 11 then can be adjusted transport
Dynamic so that crucible 10 system slowly rises, the brilliant speed of this duration is substantially consistent with support bar 11 rate of climb, is easy to increase long crystalline substance
Thickness.By arrange liftable support bar 11 so that crucible 10 position with respect to sensing heating mechanism and heater 9 position
Put and change, the temperature difference of crucible 10 axial direction can be adjusted, obtain more suitably thermograde.
Above-described embodiment is only that technology design of the present utility model and feature are described, its object is to allow and is familiar with technique
Personage will appreciate that content of the present utility model and be carried out, protection domain of the present utility model can not be limited with this,
All equivalence changes made according to this utility model spirit or modification, all should cover in protection domain of the present utility model
Interior.
Claims (10)
1. a kind of thermal field for aluminum nitride crystal growth stove it is characterised in that：Described growth furnace include body of heater, be arranged in described
The support bar of lower portion of furnace body, the support ring in described body of heater, in described body of heater, described thermal field includes described thermal field：
Crucible above described support bar；
Heat-shield mechanism, described heat-shield mechanism includes the first heat screen above described crucible, located at described crucible and described
The second heat screen between support bar, the 3rd heat screen in described support ring and the 4th heat screen, the described 3rd is heat-insulated
Screen is located on outside described crucible, described 4th heat screen is located between described 3rd heat screen and described inboard wall of furnace body；
Vertically be sequentially distributed in described body of heater for the multisection type heating arrangements that described crucible is heated.
2. a kind of thermal field for aluminum nitride crystal growth stove according to claim 1 it is characterised in that：Described multisection type
Heating arrangements be sensing heating mechanism, described sensing heating mechanism include in described support ring be located on described crucible and
Heater between described 3rd heat screen, the epimere load coil being distributed up and down and hypomere load coil, described
Epimere load coil and described hypomere load coil be all located on described 4th heat screen and described inboard wall of furnace body it
Between.
3. a kind of thermal field for aluminum nitride crystal growth stove according to claim 2 it is characterised in that：Described crucible bag
Include in cylindrical and opening up body, be covered on lid above described body, the height of described lid and described heating
The height of body is identical.
4. a kind of thermal field for aluminum nitride crystal growth stove according to claim 3 it is characterised in that：Described lid is
Bullet, the internal diameter of described body is 60mm, and the height of described body is 110mm, and the bevel angle of described lid is 60 °, described
The thickness of crucible is 2mm.
5. a kind of thermal field for aluminum nitride crystal growth stove according to claim 2 it is characterised in that：Described support bar
Up and down in described body of heater, described support bar top is provided with the support for holding up described crucible and described heater
Disk.
6. a kind of thermal field for aluminum nitride crystal growth stove according to claim 2 it is characterised in that：Described heating
Body, described crucible and described support bar are all made using tungsten.
7. a kind of thermal field for aluminum nitride crystal growth stove according to claim 1 it is characterised in that：Described multisection type
Heating arrangements are resistive heating mechanism, and described resistive heating mechanism includes the adding thermal resistance that two or more are distributed up and down,
Described adding thermal resistance is outside described crucible.
8. a kind of thermal field for aluminum nitride crystal growth stove according to claim 1 it is characterised in that：Described first every
Heat shielding, described second heat screen, described 3rd heat screen are tungsten heat shielding.
9. a kind of thermal field for aluminum nitride crystal growth stove according to claim 8 it is characterised in that：Described tungsten heat shielding
Thickness be 0.3mm, described second heat screen has six layers, and its distance between any two is 5-7mm；Described 3rd heat screen has four
Layer, its distance between any two is 5-7mm.
10. a kind of thermal field for aluminum nitride crystal growth stove according to claim 1 it is characterised in that：Described 4th
Heat screen is boron nitride heat shielding, and the thickness of described boron nitride heat shielding is 1.3mm, and described 4th heat screen has four layers, its two-by-two it
Between distance be 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054999.9U CN205990463U (en) | 2016-09-14 | 2016-09-14 | A kind of thermal field for aluminum nitride crystal growth stove |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054999.9U CN205990463U (en) | 2016-09-14 | 2016-09-14 | A kind of thermal field for aluminum nitride crystal growth stove |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400858A (en) * | 2017-09-18 | 2017-11-28 | 京东方科技集团股份有限公司 | Evaporation source and deposition system |
| CN107687023A (en) * | 2017-08-21 | 2018-02-13 | 苏州奥趋光电技术有限公司 | The fixing device and fixing means of seed crystal or substrate in aluminum-nitride single crystal growth |
| CN112899787A (en) * | 2021-05-07 | 2021-06-04 | 中国航发北京航空材料研究院 | Medium-frequency induction heating holding furnace device for single crystal/directional solidification |
-
2016
- 2016-09-14 CN CN201621054999.9U patent/CN205990463U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107687023A (en) * | 2017-08-21 | 2018-02-13 | 苏州奥趋光电技术有限公司 | The fixing device and fixing means of seed crystal or substrate in aluminum-nitride single crystal growth |
| CN107687023B (en) * | 2017-08-21 | 2020-10-30 | 奥趋光电技术(杭州)有限公司 | Fixing device and method for seed crystal or substrate in aluminum nitride single crystal growth |
| CN107400858A (en) * | 2017-09-18 | 2017-11-28 | 京东方科技集团股份有限公司 | Evaporation source and deposition system |
| CN112899787A (en) * | 2021-05-07 | 2021-06-04 | 中国航发北京航空材料研究院 | Medium-frequency induction heating holding furnace device for single crystal/directional solidification |
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Effective date of registration: 20200807 Address after: Room 518, 5 / F, building 3, 503 Shunfeng Road, Yuhang Economic and Technological Development Zone, Yuhang District, Hangzhou City, Zhejiang Province Patentee after: Aoti photoelectric technology (Hangzhou) Co.,Ltd. Address before: 215699 Suzhou City, Zhangjiagang Province, Cathay Pacific Road, No. 1, D international student Park, building (Austrian trend photoelectric) Patentee before: SUZHOU AOQU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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