CN204714946U - The aluminum nitride crystal growth device that temperature field is controlled and technique - Google Patents
The aluminum nitride crystal growth device that temperature field is controlled and technique Download PDFInfo
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- CN204714946U CN204714946U CN201520150153.4U CN201520150153U CN204714946U CN 204714946 U CN204714946 U CN 204714946U CN 201520150153 U CN201520150153 U CN 201520150153U CN 204714946 U CN204714946 U CN 204714946U
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- well heater
- crucible
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- thermal insulation
- growing apparatus
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Abstract
The utility model belongs to crystal preparation field, particularly a kind of growing apparatus of aluminum nitride crystal and the technique of correspondence.The aluminum nitride crystal growth device that the utility model provides temperature field controlled and technique, have the advantages such as Temperature Field Control is accurate, strong operability, the corresponding growth technique developed thus meets the crystallization property of aluminum nitride crystal.This preparation facilities comprises heater top, middle well heater, end well heater, closure insulation, side thermal insulation layer, end thermal insulation layer, infrared thermometer, crucible and crucible holder composition.The temperature signal of growth district three different positionss that device returns according to three infrared thermometers, the temperature control carrying out heater top, middle well heater and end heater heating power regulates, and meets the suitable temp field condition of aluminum nitride crystal growth.The utility model for preparation large size, high-quality AlN single crystal suitable growing apparatus and effective, feasible technique are provided.
Description
Technical field
The utility model belongs to crystal preparation field, particularly a kind of growing apparatus of aluminum nitride crystal and the technique of correspondence.
Background technology
As one of the Typical Representative of novel third generation semiconductor material, aluminum nitride crystal has the advantage of direct band gap, broad stopband width (6.2 electron-volts) and very excellent optical, electrical, sound, mechanical properties, has extremely wide application prospect and great economic benefit difficult to the appraisal.The exploratory development of decades proves, is that preparing aluminum nitride crystal at present the most frequently used is also the most successful method by high temperature vapor phase growth.This process of growth is, and decomposes distillation under aluminium nitride material high temperature, then forms the process of aluminum nitride crystal at cold zone recrystallize.It is significant to note that the method is prepared in aluminum nitride crystal process, growth temperature higher (more than 2000 DEG C), meanwhile, the temperature distribution of growth district has conclusive impact to the growth velocity of crystal, form and crystalline quality.Therefore, require that growing apparatus had both met enough high temperature at growth district, again can comparatively accurately control temperature field.Induction heating growing apparatus has the advantages such as heating is fast, energy consumption is little, has become the primary growth equipment of the high temperature such as growing silicon carbide, sapphire crystalline material.But now there are some researches show: induction heater moves up and down mainly by crucible the mode changing the temperature field adjusting vitellarium with the relative position of coil, be difficult to meet the harsh temperatures field condition required by aluminum nitride crystal preparation; Meanwhile, although the aluminum nitride crystal growth equipment after existing improvement improves the regulating power in temperature field to a certain extent, also fail to reach the accurate control overflow in temperature field required for this crystal growth.Therefore, the aluminum nitride crystal growth device of develop actively temperature field controllable precise and corresponding growth technique, very important for preparation large size, high quality aluminum nitride crystal.
Summary of the invention
The utility model, for the deficiencies in the prior art, provides the controlled aluminum nitride crystal growth device in temperature field and technique, with the needs of satisfied preparation large size, high quality aluminum nitride crystal.
Enforcement of the present utility model comprises:
One. the aluminum nitride crystal growth device that temperature field is controlled.
The technical scheme realizing above-mentioned purpose is a kind of growing apparatus of sublimation method to prepare aluminum nitride crystal, be made up of well heater, thermal insulation layer, infrared thermometer (5), crucible (6) and crucible holder (7), wherein, well heater comprises heater top (3), middle well heater (4) and end well heater (8), thermal insulation layer comprises closure insulation (1), side thermal insulation layer (2) and end thermal insulation layer (9), independent mutually between each well heater and thermal insulation layer, the handiness of discharging, installation and replacing can be ensured.
In technique scheme, the material of each well heater is tungsten, heater top (3) and end well heater (8) adopt disc structure that is bar-shaped or mosquito-repellent incense plate-like, middle well heater (4) adopts the columnar structured of netted or tiles, three is coaxial, and in the above two position of vertical direction can be stretched in well heater (4), also can outside it.
In technique scheme, closure insulation (1), side thermal insulation layer (2) and end thermal insulation layer (9) all adopt the mode of metal total reflection thermoshield, wherein, near the inside of crucible, which floor all adopts metallic substance tungsten, skin can adopt metallic substance molybdenum or tantalum, good heat insulation effect can be reached, reduce material cost and difficulty of processing to a certain extent simultaneously.
In technique scheme, crucible holder (7) is made up of the tungsten bar of bottom and the tungsten disc on top, and wherein, tungsten bar runs through by end well heater (8), tungsten disc is solid or there are the plectane of pierced pattern in central authorities, realizes effective heating of bottom heater.
In technique scheme, the temperature measurement location of three infrared thermometers (5) corresponds respectively to the external diameter top of crucible (6), middle part, bottom,, and be connected with the output control device of well heater meanwhile, realize monitoring the precise temp of growth district.
In technique scheme, can adopt or bottom discharge mode, wherein, during top discharge, top electrodes and the external power of growing apparatus adopt flexible cable to be connected, and closure insulation (1) promotes discharging with jacking system, during bottom discharge, bottom electrode and the external power of growing apparatus adopt flexible cable to be connected, and end thermal insulation layer (9), crucible holder (7) and crucible (6) to decline discharging with jacking system, ensure the stability of system and pick and place the accessibility of material.
Two. relevant growth technique.
Realize the technical scheme of above-mentioned purpose, comprise the steps:, a) in 0.5 ~ 5 atmospheric high pure nitrogen environment, to be risen to the temperature rise period of 2100 DEG C ~ 2350 DEG C by room temperature; B) growth temperature maintains the holding stage of 2100 ~ 2350 DEG C; C) temperature-fall period of room temperature is down to by growth temperature.
In technique scheme, step temperature rise period a), temperature rises to higher than after 1600 DEG C, and crucible (6) middle portion temperature is lower than head temperature 5 DEG C ~ 80 DEG C.
In technique scheme, step b) holding stage, crucible (6) middle portion temperature is higher than head temperature 5 DEG C ~ 80 DEG C, crucible (6) middle portion temperature and bottom temp low 0 DEG C ~ 50 DEG C.
In technique scheme, step c) temperature-fall period, temperature is down to before 1600 DEG C, and crucible (6) middle portion temperature is lower than head temperature 5 DEG C ~ 80 DEG C.
In technique scheme, the temperature signal of crucible (6) top returned according to infrared thermometer (5), middle part and bottom, carry out automatic temperature-controlled programming by the heating power of heater top (3), middle well heater (4) and end well heater (8) to regulate or manual regulation, control the temperature field condition of growth district.
In sum, this growing apparatus has the advantages such as Temperature Field Control is accurate, strong operability, and the corresponding growth technique developed thus meets the crystallization property of aluminum nitride crystal.The utility model for preparation large size, high-quality AlN single crystal suitable growing apparatus and effective, feasible technique are provided.
Accompanying drawing explanation
Fig. 1 is the diagrammatic cross-section of the utility model embodiment;
Embodiment
The utility model provides the controlled aluminum nitride crystal growth device in temperature field and technique.Be described further by embodiment of the present utility model for one below.Adopt growing apparatus as shown in Figure 1 in this embodiment, comprise and being made up of heater top (3), middle well heater (4), end well heater (8), closure insulation (1), side thermal insulation layer (2), end thermal insulation layer (9), infrared thermometer (5), crucible (6) and crucible holder (7).The material of each well heater is tungsten, heater top (3) and end well heater (8) adopt the disc structure of mosquito-repellent incense plate-like, middle well heater (4) adopts netted columnar structured, three is coaxial, and in the above two position of vertical direction can be stretched in well heater (4).Closure insulation (1), side thermal insulation layer (2) and end thermal insulation layer (9) all adopt the mode of metal total reflection thermoshield, and wherein, all adopt metallic substance tungsten near nine layers, the inside of crucible, six layers, outside can adopt metallic substance molybdenum.Crucible holder (7) is made up of the tungsten bar of bottom and the tungsten disc on top, and wherein, tungsten bar runs through by end well heater (8), and tungsten disc is the plectane that there are circular pierced pattern in central authorities.The temperature measurement location of three infrared thermometers (5) corresponds respectively to the external diameter top of crucible (6), middle part, bottom, and is connected with the output control device of well heater meanwhile.Device can adopt bottom discharge mode, and bottom electrode and the external power of growing apparatus adopt flexible cable to be connected, and during bottom discharge, end thermal insulation layer (9), crucible holder (7) and crucible (6) to decline discharging with jacking system.Concrete growth technique comprises: a) in temperature rise period-0.8 atmospheric high pure nitrogen environment, rose to 2250 DEG C through 6 hours by room temperature, and wherein, temperature rises to higher than after 1600 DEG C, and crucible (6) middle portion temperature is lower than head temperature 20 DEG C; B) holding stage-maintain 8 hours the growth temperatures of 2250 DEG C, wherein, crucible (6) middle portion temperature is higher than head temperature 10 DEG C, crucible (6) middle portion temperature and bottom temp low 10 DEG C; C) temperature-fall period-be down to room temperature after 6 hours by 2250 DEG C of growth temperatures, wherein, temperature is down to before 1600 DEG C, and crucible (6) middle portion temperature is lower than head temperature 20 DEG C.Above-mentioned temperature field condition, the temperature signal of crucible (6) top returned according to infrared thermometer (5), middle part and bottom, carries out automatic temperature-controlled programming by the heating power of heater top (3), middle well heater (4) and end well heater (8) and regulates.
Claims (8)
1. the aluminum nitride crystal growth device that temperature field is controlled, by well heater, thermal insulation layer, infrared thermometer (5), crucible (6) and crucible holder (7) composition, wherein, crucible (6) is positioned at the centre of growing apparatus, supported by the crucible holder (7) of below, well heater comprises heater top (3), middle well heater (4) and end well heater (8), lay respectively at the top of crucible (6), surrounding and below, thermal insulation layer comprises closure insulation (1), side thermal insulation layer (2) and end thermal insulation layer (9), be positioned at the periphery of well heater, and and independent mutually between thermal insulation layer, crucible holder (7) is fixed on end thermal insulation layer (9) top.
2. growing apparatus according to claim 1, it is characterized in that, heater top (3), end well heater (8) are coaxial with middle well heater (4), and the above two are in the position of vertical direction can be stretched in well heater (4), also can outside it.
3. growing apparatus according to claim 1, is characterized in that, middle well heater (4) is metallic substance tungsten, adopts the columnar structured of netted or tiles.
4. growing apparatus according to claim 1, is characterized in that, heater top (3) and end well heater (8) are metallic substance tungsten, adopts disc structure that is bar-shaped or mosquito-repellent incense plate-like.
5. growing apparatus according to claim 1, it is characterized in that, closure insulation (1), side thermal insulation layer (2) and end thermal insulation layer (9) all adopt the mode of metal total reflection thermoshield, wherein, near the inside of crucible, which floor all adopts metallic substance tungsten, and skin can adopt metallic substance molybdenum or tantalum.
6. growing apparatus according to claim 1, it is characterized in that, crucible holder (7) is made up of the tungsten bar of bottom and the tungsten disc on top, wherein, tungsten bar runs through by end well heater (8), and tungsten disc is solid or there are the plectane of pierced pattern in central authorities.
7. growing apparatus according to claim 1, is characterized in that, the temperature measurement location of infrared thermometer (5) corresponds respectively to the external diameter top of crucible (6), middle part, bottom, and is connected with the output control device of well heater meanwhile.
8. growing apparatus according to claim 1, it is characterized in that, can adopt or bottom discharge mode, wherein, during top discharge, top electrodes and the external power of growing apparatus adopt flexible cable to be connected, and closure insulation (1) promotes discharging with jacking system, during bottom discharge, bottom electrode and the external power of growing apparatus adopt flexible cable to be connected, and end thermal insulation layer (9), crucible holder (7) and crucible (6) to decline discharging with jacking system.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520150153.4U CN204714946U (en) | 2015-03-10 | 2015-03-10 | The aluminum nitride crystal growth device that temperature field is controlled and technique |
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| CN201520150153.4U CN204714946U (en) | 2015-03-10 | 2015-03-10 | The aluminum nitride crystal growth device that temperature field is controlled and technique |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400104A (en) * | 2016-06-30 | 2017-02-15 | 北京华进创威电子有限公司 | A pulling device and a pulling method for aluminium nitride monocrystalline growth |
| CN106435736A (en) * | 2016-09-14 | 2017-02-22 | 苏州奥趋光电技术有限公司 | Aluminum nitride crystal growing furnace |
| CN106637411A (en) * | 2016-12-22 | 2017-05-10 | 苏州奥趋光电技术有限公司 | Growth method of aluminum nitride single crystals |
| CN107916454A (en) * | 2016-09-14 | 2018-04-17 | 苏州奥趋光电技术有限公司 | A kind of thermal field for aluminum nitride crystal growth stove |
-
2015
- 2015-03-10 CN CN201520150153.4U patent/CN204714946U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400104A (en) * | 2016-06-30 | 2017-02-15 | 北京华进创威电子有限公司 | A pulling device and a pulling method for aluminium nitride monocrystalline growth |
| CN106435736A (en) * | 2016-09-14 | 2017-02-22 | 苏州奥趋光电技术有限公司 | Aluminum nitride crystal growing furnace |
| CN107916454A (en) * | 2016-09-14 | 2018-04-17 | 苏州奥趋光电技术有限公司 | A kind of thermal field for aluminum nitride crystal growth stove |
| CN106637411A (en) * | 2016-12-22 | 2017-05-10 | 苏州奥趋光电技术有限公司 | Growth method of aluminum nitride single crystals |
| CN106637411B (en) * | 2016-12-22 | 2019-04-05 | 苏州奥趋光电技术有限公司 | A kind of aluminum-nitride single crystal growing method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151021 Termination date: 20170310 |
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| CF01 | Termination of patent right due to non-payment of annual fee |