CN206204480U - A kind of graphite crucible for improving carborundum powder source radial temperature uniformity - Google Patents
A kind of graphite crucible for improving carborundum powder source radial temperature uniformity Download PDFInfo
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- CN206204480U CN206204480U CN201621147111.6U CN201621147111U CN206204480U CN 206204480 U CN206204480 U CN 206204480U CN 201621147111 U CN201621147111 U CN 201621147111U CN 206204480 U CN206204480 U CN 206204480U
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Abstract
The utility model is related to a kind of graphite crucible for improving carborundum powder source radial temperature uniformity, belongs to semiconductor chip single crystal preparation technical field.The graphite crucible includes：Graphite crucible, graphite crucible lid and graphite cuvette, graphite cuvette are hollow, without bottom surface, it is enclosed within graphite crucible, highly less than the height of graphite crucible, thickness is less than the wall thickness of the graphite crucible, and material is identical with the material of graphite crucible.Silicon carbide seed is fixed on graphite crucible and covers, and carborundum powder source is positioned in graphite cuvette and between graphite crucible and graphite cuvette.When monocrystalline is grown, graphite crucible and graphite cuvette generate heat simultaneously in alternating magnetic field, make between graphite crucible center and graphite crucible and graphite cuvette while producing a large amount of reaction atmospheres, avoid the occurrence of obvious cold and hot subregion, the uniformity of carborundum powder source radial temperature is improved, so as to improve the service efficiency in carborundum powder source and the growth rate of monocrystalline.
Description
Technical field
The utility model is related to semiconductor chip single crystal preparation technical field, specifically, more particularly to a kind of to improve carbonization
The graphite crucible of silica flour source radial temperature uniformity.
Background technology
Carborundum as a kind of new semiconductor material with wide forbidden band, comprising high-melting-point, high conductivity, high-termal conductivity and resistance to
The features such as high voltage, the important materials as high-frequency and high-power component are widely used in Aeronautics and Astronautics, rocket and geology
The key areas such as probing.
At present, growth carborundum generally uses physical carbon burdening (PVT methods), and silicon carbide seed is attached into graphite crucible
Cover, graphite crucible is heated to 1800-2500 DEG C built with the carborundum powder source as growth raw material, powder source, it is distilled
Monocrystalline is generated on to cold end seed crystal.PVT methods growth carborundum uses intermediate frequency power supply heat growth raw material and seed crystal, graphite crucible to put
Induction coil center is placed in, the alternating current of intermediate frequency power supply produces alternating magnetic field by induction coil, and graphite crucible is in alternating magnetic field
It is middle to produce vortex electricity, so that powder source and seed crystal are heated, and heat is transmitted from sidewall of crucible to powder source.Therefore, near sidewall of crucible position
High-temperature region is set to, it is lower closer to crucible central temperature, it is low-temperature space, this allows for powder source has larger radial temperature ladder
Degree.High-temperature region is the region that reaction atmosphere is mainly produced, and low-temperature space can make reaction atmosphere redeposited, larger radial temperature ladder
Degree can make a big chunk in the reaction atmosphere for concentrate on high-temperature region flow to low-temperature space and redeposited.This phenomenon can hinder instead
Answer the transmission of atmosphere, and then reduce the service efficiency in powder source, especially during growing large-size monocrystalline, being relatively large in diameter for crucible makes
The radial symmetry gradient for obtaining powder source is larger, substantially reduces the service efficiency in powder source, and then reduce the growth rate of monocrystalline.
Utility model content
In view of problem above, the purpose of this utility model is to provide a kind of carborundum powder source radial temperature uniformity of improving
Graphite crucible is big and reduce asking for powder source service efficiency and single crystal growth rate to solve carborundum powder source radial symmetry gradient
Topic, and be conducive to growing large-size monocrystalline.
The graphite crucible for improving carborundum powder source radial temperature uniformity described in the utility model, including graphite crucible
With graphite crucible lid, graphite crucible lid is located at graphite crucible top sealing part, and graphite crucible covers and be fixed with carborundum seed
Crystalline substance, wherein, the graphite crucible also includes graphite cuvette, and the graphite cuvette is hollow, without bottom surface, is enclosed within the graphite crucible sheet
In vivo, highly less than the height of the graphite crucible, thickness less than the graphite crucible wall thickness, material with
The material of the graphite crucible is identical, carborundum powder source be positioned in graphite cuvette and graphite cuvette and graphite crucible it
Between.
Preferably, the graphite crucible is made up with the graphite crucible lid of high purity graphite.
Preferably, the graphite crucible section makes circular.
Further, it is preferable to, the graphite slot cross-section is fabricated to circle, and with the graphite crucible concentric.
Further, it is preferable to, the 1/3~1/2 of a diameter of described graphite crucible diameter of the graphite cuvette.
Preferably, the height of the graphite cuvette is the 1/3~1/2 of the elemental height in carborundum powder source, not with grow into
Monocrystalline is contacted, and keeps certain distance.
When single-crystal silicon carbide is produced, in the alternating magnetic field produced by induction coil, graphite cuvette and graphite crucible sheet
Body produces vortex electricity simultaneously, heats carborundum powder source and seed crystal.In graphite cuvette and graphite cuvette and graphite crucible it
Between carborundum powder source be heated simultaneously, forming high-temperature region at the wall of graphite cuvette and graphite crucible, and in stone
Black crucible center will not form low-temperature space, therefore, it is to avoid there is obvious cold and hot subregion in powder source, so as to improve powder source radially
The uniformity of temperature, and the transmission of reaction atmosphere will not be hindered, and then the service efficiency in powder source is improve, and accelerate list
Brilliant growth rate.
Compared with prior art, the utility model has the advantage that and has the beneficial effect that：
First, the wall and graphite cuvette of graphite crucible heat carborundum powder source simultaneously, it is to avoid occur obvious cold and hot point
Area, improves the uniformity of powder source radial temperature；
2nd, when graphite crucible is relatively large in diameter, powder source radial symmetry gradient is larger, and powder source footpath can be improved using the utility model
To the uniformity of temperature, be conducive to growing large-size monocrystalline.
Brief description of the drawings
Fig. 1 is the elevation cross-sectional view of graphite crucible described in the utility model；
Fig. 2 is profiles of the Fig. 1 along line A-A.
Specific embodiment
In conjunction with accompanying drawing, the utility model is described further.
Fig. 1 is the elevation cross-sectional view of graphite crucible described in the utility model, as shown in figure 1, graphite described in the utility model
Crucible includes：
Graphite crucible 1 and graphite crucible lid 2, wherein, the top that graphite crucible lid 2 is located at graphite crucible 1 is sealed
At mouthful, and silicon carbide seed 3 is fixed with graphite crucible lid 2；
Graphite cuvette 4, graphite cuvette 4 is hollow, without bottom surface, is enclosed within graphite crucible 1, highly less than graphite crucible sheet
The height of body 1, thickness is less than the wall thickness of graphite crucible 1, and material is identical with the material of graphite crucible 1,
To produce vortex electricity, heating carborundum powder source 5 and silicon carbide seed 3 in alternating magnetic field, wherein, carborundum powder source 5 is located at stone
In ink tank 4 and between graphite cuvette 4 and graphite crucible 1.
Additionally, graphite crucible 1 is made with graphite crucible lid 2 by the high purity graphite of identical material, then graphite cuvette 4
Also it is made by high purity graphite, wherein, high purity graphite refers to graphite of the phosphorus content more than 99.99%.
Fig. 2 is profiles of the Fig. 1 along line A-A.When answering coil heats due to use feeling, the alternating magnetic field section of generation is round
Shape, it is preferred, therefore, that, as shown in Fig. 2 graphite crucible 1 makes circular with the section of graphite cuvette 4, and both
With one heart, ensureing that by the magnetic field of graphite crucible 1 and graphite cuvette 4 be symmetrically.
Wherein, the 1/3~1/2 of the diameter of a diameter of graphite crucible 1 of graphite cuvette 4, diameter refers both to external diameter, graphite cuvette 4
Height be the 1/3~1/2 of the elemental height of carborundum powder source 5, keep certain distance without phase with the single-crystal silicon carbide that grows into
Contact, the influence of axial-temperature gradient when being grown to silicon carbide seed 3 with reducing.
Additionally, graphite cuvette 4 can also be the other shapes such as square, rectangle or ellipse.
When being heated to graphite crucible described in the utility model using induction coil, graphite crucible 1 and graphite cuvette 4
The generation vortex electricity in alternating magnetic field, vortex electricity generation heat makes graphite crucible 1 and graphite cuvette 4 generate heat simultaneously, to graphite
The carborundum powder source 5 placed in groove 4 and between graphite crucible 1 and graphite cuvette 4 is heated simultaneously, so as to avoid carbonization
There is larger radial symmetry gradient in silica flour source 5, the uniformity of the radial temperature of carborundum powder source 5 is improve, without in graphite
Occurs obvious cold and hot subregion in crucible.When sublimation temperature is heated to carborundum powder source 5, graphite crucible center and graphite
While producing substantial amounts of reaction atmosphere between crucible body 1 and graphite cuvette 4, and the transmission of reaction atmosphere will not be hindered, so as to carry
The service efficiency in carborundum powder source 5 high, and accelerate the growth rate of single-crystal silicon carbide.
Using 0.5mm thick seed crystal as the crystal seed of growth carborundum, it is set to be carried out according to growing silicon carbice crystals technique
Growth, uses graphite crucible and the graphite crucible with graphite cuvette described in the utility model without graphite cuvette in silicon carbide growth system
Tested respectively, wherein, at 2150 DEG C, bottom temp is controlled at 2300 DEG C the control of graphite crucible head temperature, carries out 80 small
When growth, obtain experimental result as shown in table 1.
Table 1：
| Graphite crucible species | Without graphite cuvette | Band graphite cuvette |
| Silicon carbide whisker body thickness | 23mm | 30mm |
From table 1 it follows that using the graphite earthenware with graphite cuvette described in the utility model in silicon carbide growth system
Crucible, the silicon carbide whisker body thickness for obtaining is larger.The utility model by setting graphite cuvette in graphite crucible, near stone
The carborundum powder source at black crucible body wall and graphite crucible center is heated simultaneously, so as to improve carborundum powder source radial temperature
Uniformity, and then the growth rate of single-crystal silicon carbide can be accelerated.
Claims (6)
1. a kind of graphite crucible for improving carborundum powder source radial temperature uniformity, including graphite crucible and graphite crucible
Lid, graphite crucible lid is located at graphite crucible top sealing part, and the graphite crucible is covered and is fixed with silicon carbide seed, and it is special
Levy and be, also including graphite cuvette, the graphite cuvette is hollow, without bottom surface, be enclosed within the graphite crucible, be highly less than
The height of the graphite crucible, thickness is less than the wall thickness of the graphite crucible, material and the graphite crucible
The material of body is identical, carborundum powder source be positioned in the graphite cuvette and the graphite cuvette and the graphite crucible it
Between.
2. graphite crucible according to claim 1, it is characterised in that the graphite crucible and the graphite crucible lid
It is made up of high purity graphite.
3. graphite crucible according to claim 1, it is characterised in that the graphite crucible section makes circular.
4. graphite crucible according to claim 3, it is characterised in that the graphite slot cross-section is fabricated to circle, and with institute
State graphite crucible concentric.
5. graphite crucible according to claim 4, it is characterised in that a diameter of described graphite crucible sheet of the graphite cuvette
The 1/3~1/2 of body diameter.
6. graphite crucible according to claim 5, it is characterised in that the height of the graphite cuvette for carborundum powder source just
The 1/3~1/2 of beginning height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621147111.6U CN206204480U (en) | 2016-10-21 | 2016-10-21 | A kind of graphite crucible for improving carborundum powder source radial temperature uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621147111.6U CN206204480U (en) | 2016-10-21 | 2016-10-21 | A kind of graphite crucible for improving carborundum powder source radial temperature uniformity |
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| Publication Number | Publication Date |
|---|---|
| CN206204480U true CN206204480U (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621147111.6U Active CN206204480U (en) | 2016-10-21 | 2016-10-21 | A kind of graphite crucible for improving carborundum powder source radial temperature uniformity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN113073384A (en) * | 2021-03-26 | 2021-07-06 | 赵丽丽 | Method and device capable of effectively reducing SiC single crystal defects |
-
2016
- 2016-10-21 CN CN201621147111.6U patent/CN206204480U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN113073384A (en) * | 2021-03-26 | 2021-07-06 | 赵丽丽 | Method and device capable of effectively reducing SiC single crystal defects |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170803 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee after: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee before: Zhuhai Ding Tai Xinyuan crystal Ltd |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170822 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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| TR01 | Transfer of patent right |