CN207376141U - A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control - Google Patents
A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control Download PDFInfo
- Publication number
- CN207376141U CN207376141U CN201721445729.5U CN201721445729U CN207376141U CN 207376141 U CN207376141 U CN 207376141U CN 201721445729 U CN201721445729 U CN 201721445729U CN 207376141 U CN207376141 U CN 207376141U
- Authority
- CN
- China
- Prior art keywords
- graphite
- silicon carbide
- induction coil
- crucible
- heating apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 230000012010 growth Effects 0.000 title claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 72
- 239000010439 graphite Substances 0.000 claims abstract description 72
- 230000006698 induction Effects 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000004861 thermometry Methods 0.000 claims abstract description 12
- 230000000630 rising effect Effects 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 1
- 229910052571 earthenware Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of silicon carbide monocrystal growth devices of the accurate axial temperature ladder of control, including graphite crucible, graphite cover, graphite soft felt insulating layer and induction heating apparatus, the graphite cover is located at graphite crucible described in graphite crucible top seal, the graphite cover medial center outburst area is bonded with seed wafer, the graphite soft felt insulating layer is coated around the graphite crucible, top, bottom, the induction heating apparatus is set around the graphite soft felt insulating layer, the induction heating apparatus includes two groups of upper induction coil and lower induction coil, infrared thermometry device is provided with respectively at the top center of the graphite cover and the bottom centre of graphite crucible.The utility model induction heating apparatus using upper and lower two groups can independent control induction coil device and infrared thermometry device, the temperature above and below crucible can be measured respectively, so as to accurately control axial-temperature gradient, preferable crystal growth interface is obtained, to obtain the single-crystal silicon carbide crystal of high quality.
Description
Technical field
The utility model is related to silicon carbide monocrystal growth manufacturing field of equipment, are specially a kind of axial temperature ladder of accurate control
Silicon carbide monocrystal growth device.
Background technology
Single-crystal silicon carbide material belongs to the representative of third generation wide bandgap semiconductor materials, has broad stopband, high heat conductance, height
The features such as breakdown electric field, high radiation preventing ability, will be expected to break through the development bottleneck of first and second generation semi-conducting material application technology,
For apply semiconductor lighting, power electronic devices, laser and detector and other etc. fields have significant impact.
For silicon carbide monocrystal growth with physical vaporous deposition (PVT) for main growth pattern, difficulty is very high, must at present
Silicon carbide powder must be directly sublimed into Si, Si under 2100 DEG C of temperatures above and environment under low pressure2C、SiC2Grade gases, and along
Temperature gradient is transferred at the seed crystal of lower temperature region depositing crystalline into single-crystal silicon carbide from high-temperature region.
During silicon carbide monocrystal growth, axial-temperature gradient is a reference for controlling crystal quality critically important, though
The grower and method parameter of right each side's development are all not quite similar, but research direction is all towards control crystal growth interface and is
Convex interface carries out, to achieve the purpose that control homoepitaxial speed.
Utility model content
The purpose of this utility model is to provide the carborundum lists that a kind of single-crystal silicon carbide crystal accurately controls axial temperature ladder
Crystals growth device can accurately control axial-temperature gradient, obtain preferable crystal growth interface, to obtain the carbonization of high quality
Silicon single crystal crystal, to solve the problems mentioned in the above background technology.
To achieve the above object, the utility model provides following technical solution：A kind of carbonization of the axial temperature ladder of accurate control
Monocrystalline silicon growing device, including graphite crucible, graphite cover, graphite soft felt insulating layer and induction heating apparatus, the graphite cover position
In graphite crucible described in graphite crucible top seal, the graphite cover medial center outburst area is bonded with seed wafer, the stone
The soft felt insulating layer of ink is coated around the graphite crucible, top, bottom, the induction heating apparatus surrounds the graphite soft felt
Insulating layer is set, and the induction heating apparatus includes two groups of upper induction coil and lower induction coil, the top of the graphite cover
Infrared thermometry device is provided with respectively at the bottom centre of portion center and graphite crucible.
Preferably, the silicon carbide powder of purity 5N-6N is placed in the graphite crucible.
Preferably, the graphite cover medial center outburst area is cylinder, and rising height is the graphite cover
0.5-1.5 times, 0.3-0.6 times of a diameter of graphite cover.
Preferably, the upper induction coil and lower induction coil be each configured with can independent control transformer, electricity
Control and heating system.
Preferably, based on the mode of heating of the induction heating apparatus is heated with lower induction coil, the top sensing
The Power Control ratio of coil and lower induction coil is 0:10-3:7.
Preferably, the top and bottom of the graphite soft felt insulating layer correspond to the infrared thermometry device be preset with it is logical
Hole.
Compared with prior art, the beneficial effects of the utility model are：
The utility model induction heating apparatus uses upper and lower two groups of induction coil devices, and has respective transformer, automatically controlled
With heating system can independent control, infrared thermometry device is also using two groups, the top center being respectively erected on the outside of graphite crucible
With bottom centre, the temperature of top graphite cover and bottom graphite crucible can be measured respectively, crucible upper and lower temperature difference is obtained, and then calculates
Axial-temperature gradient, the heating system by adjusting upper the following group accurately control axial-temperature gradient, obtain preferable crystal growth
Interface, to obtain the single-crystal silicon carbide crystal of high quality.
Description of the drawings
Fig. 1 is the overall structure diagram of the utility model.
In figure：1st, graphite crucible, 2, graphite cover, 3, graphite soft felt insulating layer, 4, induction heating apparatus, 5, seed wafer, 6,
Infrared thermometry device, 7, silicon carbide powder, 8, through hole, 41, upper induction coil, 42, lower induction coil.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
Referring to Fig. 1, the utility model provides a kind of technical solution：A kind of single-crystal silicon carbide of the axial temperature ladder of accurate control
Grower, including graphite crucible 1, graphite cover 2, graphite soft felt insulating layer 3 and induction heating apparatus 4, in the graphite crucible 1
The silicon carbide powder 7 of purity 5N-6N is placed with, the graphite cover 2 is located at graphite crucible 1 described in 1 top seal of graphite crucible, institute
It states 2 medial center outburst area of graphite cover and is bonded with seed wafer 5, the graphite soft felt insulating layer 3 coats the graphite crucible 1
Surrounding, top, bottom, the thickness of the graphite soft felt insulating layer 3 is 5-10mm, and the induction heating apparatus 4 surrounds the stone
The soft felt insulating layer 3 of ink is set, and the induction heating apparatus 4 includes 42 two groups of upper induction coil 41 and lower induction coil, institute
State upper induction coil 41 and lower induction coil 42 be each configured with can the transformer of independent control, automatically controlled and heating system,
Two groups of induction coils can install lifting gear additional, and mobile speed is 0.1mm/h-5mm/h, the top center of the graphite cover 2 and
Infrared thermometry device 6, the measuring temp scope 1000 of infrared thermometry device 6 are provided at the bottom centre of graphite crucible 1 respectively
DEG C -3000 DEG C,.
The 2 medial center outburst area of graphite cover is cylinder, and the thickness of the graphite cover 2 is 5-20mm, protrusion
Highly it is 0.5-1.5 times, 0.3-0.6 times of a diameter of graphite cover 2 of the graphite cover 2.
The mode of heating of the induction heating apparatus 4 is based on the heating of lower induction coil 42, the upper induction coil
41 and lower induction coil 42 Power Control ratio be 0:10-3:7.The power device of upper induction coil 16 holds for 10kw
Amount, and the power device of lower induction coil 17 is 20kw capacity, two groups of induction frequencies are 6kHz-10kHz.
The top and bottom of the graphite soft felt insulating layer 3 correspond to the infrared thermometry device 6 and are preset with through hole 8.
The utility model induction heating apparatus uses upper and lower two groups of induction coil devices, and has respective transformer, automatically controlled
With heating system can independent control, infrared thermometry device is also using two groups, the top center being respectively erected on the outside of graphite crucible
With bottom centre, the temperature of top graphite cover and bottom graphite crucible can be measured respectively, crucible upper and lower temperature difference is obtained, and then calculates
Axial-temperature gradient, the heating system by adjusting upper the following group accurately control axial-temperature gradient, obtain preferable crystal growth
Interface, to obtain the single-crystal silicon carbide crystal of high quality.
In the description of the utility model, it is to be understood that term " coaxial ", " bottom ", " one end ", " top ", " in
Portion ", " other end ", " on ", " one side ", " top ", " interior ", " forepart ", " center ", the orientation of the instructions such as " both ends " or position close
Be for based on orientation shown in the drawings or position relationship, be for only for ease of description the utility model and simplify description rather than
Indicate or imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore cannot
It is interpreted as the limitation to the utility model.
In the utility model, unless otherwise clearly defined and limited, term " installation ", " setting ", " connection ", " Gu
It is fixed ", the terms such as " being screwed on " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；
Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary, it can be with
It is the interaction relationship of connection inside two elements or two elements, unless otherwise restricted clearly, for this field
For those of ordinary skill, concrete meaning of the above-mentioned term in the utility model can be understood as the case may be.
While there has been shown and described that the embodiment of the utility model, for the ordinary skill in the art,
It is appreciated that in the case where not departing from the principle of the utility model and spirit can these embodiments be carried out with a variety of variations, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (6)
1. a kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control, including graphite crucible (1), graphite cover (2), graphite
Soft felt insulating layer (3) and induction heating apparatus (4), the graphite cover (2) are located at graphite earthenware described in graphite crucible (1) top seal
Crucible (1), graphite cover (2) the medial center outburst area are bonded with seed wafer (5), graphite soft felt insulating layer (3) cladding
Around the graphite crucible (1), top, bottom, it is characterised in that：The induction heating apparatus (4) is soft around the graphite
Felt insulating layer (3) is set, and the induction heating apparatus (4) includes upper induction coil (41) and lower induction coil (42) two
Infrared thermometry device (6) is provided with respectively at group, the top center of the graphite cover (2) and the bottom centre of graphite crucible (1).
2. a kind of silicon carbide monocrystal growth device of accurate axial temperature ladder of control according to claim 1, it is characterised in that：
The silicon carbide powder (7) of purity 5N-6N is placed in the graphite crucible (1).
3. a kind of silicon carbide monocrystal growth device of accurate axial temperature ladder of control according to claim 1, it is characterised in that：
Graphite cover (2) the medial center outburst area is cylinder, and rising height is 0.5-1.5 times of the graphite cover (2), directly
Footpath is 0.3-0.6 times of the graphite cover (2).
4. a kind of silicon carbide monocrystal growth device of accurate axial temperature ladder of control according to claim 1, it is characterised in that：
The upper induction coil (41) and lower induction coil (42) be each configured with can independent control transformer, it is automatically controlled with heating
System.
5. a kind of silicon carbide monocrystal growth device of accurate axial temperature ladder of control according to claim 1, it is characterised in that：
The mode of heating of the induction heating apparatus (4) is based on lower induction coil (42) heating, the upper induction coil (41)
Power Control ratio with lower induction coil (42) is 0:10-3:7.
6. a kind of silicon carbide monocrystal growth device of accurate axial temperature ladder of control according to claim 1, it is characterised in that：
The top and bottom of the graphite soft felt insulating layer (3) correspond to the infrared thermometry device (6) and are preset with through hole (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721445729.5U CN207376141U (en) | 2017-11-02 | 2017-11-02 | A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721445729.5U CN207376141U (en) | 2017-11-02 | 2017-11-02 | A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207376141U true CN207376141U (en) | 2018-05-18 |
Family
ID=62333974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721445729.5U Active CN207376141U (en) | 2017-11-02 | 2017-11-02 | A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207376141U (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
| CN110904508A (en) * | 2019-10-28 | 2020-03-24 | 山东天岳先进材料科技有限公司 | Preparation device and application of silicon carbide single crystal |
| CN111235630A (en) * | 2020-03-26 | 2020-06-05 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | PVT method double-seed crystal single crystal preparation method and thermal field |
| CN111575794A (en) * | 2020-05-15 | 2020-08-25 | 南通大学 | Low-stress silicon carbide crystal growth temperature field setting device and crystal growth method |
| CN112176396A (en) * | 2020-09-22 | 2021-01-05 | 南京晶升能源设备有限公司 | Axial temperature multi-gradient controllable thermal field and crystal growth furnace |
| CN112663134A (en) * | 2020-11-30 | 2021-04-16 | 山西烁科晶体有限公司 | Double-temperature-zone independently controlled silicon carbide single crystal growth device and growth method |
| CN112921392A (en) * | 2021-02-01 | 2021-06-08 | 赵丽丽 | Preparation method of silicon carbide crystal |
| CN112941622A (en) * | 2021-03-04 | 2021-06-11 | 赵丽丽 | Device and method for preparing large-thickness single crystal |
| CN112981531A (en) * | 2021-02-07 | 2021-06-18 | 赵丽丽 | Device and method for growing high-quality SiC single crystal |
| CN114261967A (en) * | 2021-12-08 | 2022-04-01 | 连城凯克斯科技有限公司 | Silicon carbide raw material synthesis furnace |
| CN114318542A (en) * | 2022-03-14 | 2022-04-12 | 浙江大学杭州国际科创中心 | Method for maintaining growth temperature of silicon carbide single crystal |
-
2017
- 2017-11-02 CN CN201721445729.5U patent/CN207376141U/en active Active
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184649A (en) * | 2019-07-02 | 2019-08-30 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of novel heat insulation material structure PVT single crystal growth device |
| CN110359087A (en) * | 2019-07-11 | 2019-10-22 | 浙江博蓝特半导体科技股份有限公司 | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide |
| CN110904508B (en) * | 2019-10-28 | 2021-01-12 | 山东天岳先进科技股份有限公司 | Preparation device and application of silicon carbide single crystal |
| CN110904508A (en) * | 2019-10-28 | 2020-03-24 | 山东天岳先进材料科技有限公司 | Preparation device and application of silicon carbide single crystal |
| CN111235630A (en) * | 2020-03-26 | 2020-06-05 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | PVT method double-seed crystal single crystal preparation method and thermal field |
| CN111575794A (en) * | 2020-05-15 | 2020-08-25 | 南通大学 | Low-stress silicon carbide crystal growth temperature field setting device and crystal growth method |
| CN112176396A (en) * | 2020-09-22 | 2021-01-05 | 南京晶升能源设备有限公司 | Axial temperature multi-gradient controllable thermal field and crystal growth furnace |
| CN112663134A (en) * | 2020-11-30 | 2021-04-16 | 山西烁科晶体有限公司 | Double-temperature-zone independently controlled silicon carbide single crystal growth device and growth method |
| CN112921392A (en) * | 2021-02-01 | 2021-06-08 | 赵丽丽 | Preparation method of silicon carbide crystal |
| CN112981531A (en) * | 2021-02-07 | 2021-06-18 | 赵丽丽 | Device and method for growing high-quality SiC single crystal |
| CN112941622A (en) * | 2021-03-04 | 2021-06-11 | 赵丽丽 | Device and method for preparing large-thickness single crystal |
| CN114261967A (en) * | 2021-12-08 | 2022-04-01 | 连城凯克斯科技有限公司 | Silicon carbide raw material synthesis furnace |
| CN114261967B (en) * | 2021-12-08 | 2023-08-08 | 连城凯克斯科技有限公司 | Silicon carbide raw material synthesis furnace |
| CN114318542A (en) * | 2022-03-14 | 2022-04-12 | 浙江大学杭州国际科创中心 | Method for maintaining growth temperature of silicon carbide single crystal |
| CN114318542B (en) * | 2022-03-14 | 2022-07-15 | 浙江大学杭州国际科创中心 | Method for maintaining growth temperature of silicon carbide single crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207376141U (en) | A kind of silicon carbide monocrystal growth device of the axial temperature ladder of accurate control | |
| CN207498521U (en) | A kind of silicon carbide monocrystal growth device for promoting quality | |
| CN207498512U (en) | A kind of silicon carbide monocrystal growth device for growing high usage | |
| CN206624942U (en) | A kind of device of physical carbon burdening growth carborundum crystals | |
| US9068277B2 (en) | Apparatus for manufacturing single-crystal silicon carbide | |
| CN107208310B (en) | The manufacturing method of single-crystal silicon carbide | |
| CN207391600U (en) | A kind of growth apparatus of carborundum crystals | |
| CN106381525B (en) | A kind of device of the reduction InP crystal twin based on VGF method | |
| CN103696012B (en) | The preparation method of a kind of high uniformity, high yield semi insulating silicon carbide silicon substrate | |
| TWI484074B (en) | Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer | |
| CN107223168B (en) | The furnace of the brilliant distillation of kind for wide bandgap crystal | |
| CN208308999U (en) | A kind of SiC single crystal grower improving raw material service efficiency | |
| EP2773797B1 (en) | Crucible and method for the production of a (near) monocrystalline semiconductor ingot | |
| CN110359087A (en) | Silicon carbide monocrystal growth device and the method for manufacturing single-crystal silicon carbide | |
| JPH07172998A (en) | Production of single crystal of silicon carbide | |
| CN208293118U (en) | A kind of SiC single crystal grower of reusable crucible | |
| CN208618006U (en) | A kind of silicon carbide monocrystal growth device | |
| CN207376143U (en) | A kind of accurate control temperature device for growing single-crystal silicon carbide | |
| RU2327248C2 (en) | PLATE OF LARGE DIAMETER MADE OUT OF SiC AND METHOD OF ITS FABRICATION | |
| CN206244921U (en) | The device of carbon particle inclusion enclave in a kind of reduction single-crystal silicon carbide | |
| CN106480493A (en) | A kind of New Heating for crystal growth | |
| CN205313716U (en) | Independent rotary mechanism of crucible in siC growth of single crystal equipment | |
| CN105442044A (en) | Crucible independent rotating mechanism of SiC single crystal growth equipment | |
| CN207596994U (en) | Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis | |
| CN115261975A (en) | Temperature-gradient dynamically adjustable artificial crystal growth temperature field structure and temperature field adjusting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240611 Address after: 410000 No. 399, Changxing Road, Changsha hi tech Development Zone, Changsha City, Hunan Province Patentee after: Hunan San'an Semiconductor Co.,Ltd. Country or region after: China Address before: 362211 enterprise operation center building, Jiangpu community, Chendai Town, Jinjiang City, Quanzhou City, Fujian Province Patentee before: FUJIAN NORSTEL MATERIAL TECHNOLOGIES Co.,Ltd. Country or region before: China |