CN207376143U - A kind of accurate control temperature device for growing single-crystal silicon carbide - Google Patents
A kind of accurate control temperature device for growing single-crystal silicon carbide Download PDFInfo
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- CN207376143U CN207376143U CN201721446601.0U CN201721446601U CN207376143U CN 207376143 U CN207376143 U CN 207376143U CN 201721446601 U CN201721446601 U CN 201721446601U CN 207376143 U CN207376143 U CN 207376143U
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- graphite
- soft felt
- insulating layer
- temperature
- silicon carbide
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Abstract
The utility model discloses a kind of accurate control temperature devices for growing single-crystal silicon carbide, including cavity, graphite crucible, graphite cover, graphite soft felt insulating layer, induction coil, seed wafer is bonded in graphite cover, graphite soft felt insulating layer coated graphite crucible, induction coil is set around graphite soft felt insulating layer, graphite crucible fixed placement is on bottom shore, a quartz tube is arranged between the graphite soft felt insulating layer and induction coil, infrared pyrometer is provided with above the chamber central, graphite soft felt insulating layer center at the top of graphite cover corresponds to infrared pyrometer and offers measured hole, the graphite soft felt insulating layer top center both sides symmetrically offer installing port, installing port is mounted with the thermocouple stretched into above cavity respectively.The utility model measures actual growth temperature with infrared pyrometer, and two thermocouple auxiliary monitoring temperature of outer installation effectively avoid temperature from controlling exception, and precision controls the temperature of grower, grows the crystal of high quality.
Description
Technical field
The utility model is related to silicon carbide monocrystal growth equipment manufacturing technology fields, are specially a kind of growth single-crystal silicon carbide
Accurate control temperature device.
Background technology
Single-crystal silicon carbide material belongs to the representative of third generation wide bandgap semiconductor materials, has broad stopband, high heat conductance, height
The features such as breakdown electric field, high radiation preventing ability, will be expected to break through the development bottleneck of first and second generation semi-conducting material application technology,
Be mainly used in semiconductor lighting, power electronic devices, laser and detector and other etc. fields.
For silicon carbide monocrystal growth with physical vaporous deposition (PVT) for main growth pattern, difficulty is very high, must at present
Silicon carbide powder must be directly sublimed into gas under 2100 DEG C of temperatures above and environment under low pressure, and along temperature gradient from high temperature
Area is transferred to depositing crystalline at the seed crystal of lower temperature region.
Measurement temperature manner is to use infrared pyrometer at present, but probably due to seeing in monocrystalline crystallization process is grown
Survey eyeglass is dirty, carbon it is fine disperse, the factors such as gas disturbance and influence the measurement of temperature, cause actual temperature wrong with measuring temperature
Difference causes temperature control abnormal and eventually affects crystal quality.
Utility model content
The purpose of this utility model is to provide a kind of accurate control temperature device for growing single-crystal silicon carbide, with solution
Certainly the problems mentioned above in the background art.
To achieve the above object, the utility model provides following technical solution：A kind of accurate control for growing single-crystal silicon carbide
Temperature device processed, it is described including cavity and arranged on the in vivo graphite crucible of chamber, graphite cover, graphite soft felt insulating layer, induction coil
Graphite cover is located at graphite crucible described in graphite crucible top seal, and the graphite cover medial center region is bonded with seed wafer, institute
State graphite soft felt insulating layer coat around the graphite crucible, top, bottom, the induction coil surrounds the graphite soft felt
Insulating layer is set, and the graphite crucible fixed placement is on bottom shore, between the graphite soft felt insulating layer and induction coil
It is arranged with a quartz tube, is provided with infrared pyrometer above the chamber central, the graphite soft felt at the top of the graphite cover is protected
Warm layer center corresponds to the infrared pyrometer and offers measured hole, and the graphite soft felt insulating layer top center both sides are symmetrically opened
Equipped with installing port, the installing port is mounted with the thermocouple stretched into above cavity respectively.
Preferably, the thickness of the graphite crucible and graphite cover is 5-20mm.
Preferably, the silicon carbide powder of purity 5N-6N is placed in the graphite crucible.
Preferably, a diameter of 5-10mm of the installing port, depth are a half thickness of the graphite soft felt insulating layer.
Preferably, the distance of two thermocouples is the 1/2-4/5 of graphite crucible diameter, and the thermocouple is coated with pottery
Porcelain protects shell.
Compared with prior art, the beneficial effects of the utility model are：
1st, the utility model measures actual growth temperature with infrared pyrometer, in order to avoid in growth monocrystalline crystallization process
Probably due to observation eyeglass is dirty, carbon it is fine disperse, the factors such as gas disturbance influence the accuracy of temperature survey, in addition install two additional
Thermocouple auxiliary monitoring temperature, when discovery infrared pyrometer measurement temperature change and thermocouple measuring temperature variation are inconsistent
When, the variable quantity for calculating electric thermo-couple temperature is switched to from the variable quantity for calculating infrared pyrometer temperature by control software, then
It goes to calculate the increase and decrease amplitude for controlling power by PID, to avoid measurement problem temperature is caused to control exception, and then influenced
Crystal quality.
2nd, the temperature of the accurate control grower of the utility model, actual temperature can be controlled to be less than in design temperature deviation
Within ± 1 DEG C, it can be gone to observe the symmetrical implementations of radial symmetry gradient by the temperature of two thermocouple measurements, and can be thereby
As a result adjusting and optimizing grower, to grow higher-quality crystal.
Description of the drawings
Fig. 1 is the utility model structure diagram；
In figure：1st, cavity；2nd, graphite crucible；3rd, graphite cover；4th, graphite soft felt insulating layer；5th, induction coil；6th, seed wafer；
7th, bottom shore；8th, quartz tube；9th, infrared pyrometer；10th, measured hole；11st, installing port；12nd, thermocouple；13rd, carborundum powder
End.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
Referring to Fig. 1, the utility model provides a kind of technical solution：A kind of accurate control temperature for growing single-crystal silicon carbide
Device, it is described including cavity 1 and arranged on the in vivo graphite crucible 2 of chamber, graphite cover 3, graphite soft felt insulating layer 4, induction coil 5
It is placed with the silicon carbide powder 13 of purity 5N-6N in graphite crucible 2, the thickness of the graphite crucible 2 and graphite cover 3 is 5-
20mm, the graphite cover 3 are located at graphite crucible 2 described in 2 top seal of graphite crucible, and the 3 medial center region of graphite cover is glued
Conjunction has seed wafer 6, the graphite soft felt insulating layer 4 is coated around the graphite crucible 2, top, bottom, the induction coil
5 are set around the graphite soft felt insulating layer 4, and 2 fixed placement of graphite crucible is on bottom shore 7, the graphite soft felt
A quartz tube 8 is arranged between insulating layer 4 and induction coil 5, grower and induction coil 5 are separated, avoids graphitic carbon fine
Contact induction coil 5 and short circuit occurs, 1 overcentre of cavity is provided with infrared pyrometer 9,3 top of graphite cover
4 center of graphite soft felt insulating layer correspond to the infrared pyrometer 9 and offer measured hole 10, the graphite soft felt insulating layer 4
Top center both sides symmetrically offer installing port 11, and the installing port 11 is mounted with the thermocouple stretched into above cavity 1 respectively
12, a diameter of 5-10mm of the installing port 11, depth are a half thickness of the graphite soft felt insulating layer 4., two heat
The distance of galvanic couple 12 is the 1/2-4/5 of 2 diameter of graphite crucible, and the thermocouple 12 is coated with ceramics protection shell.
Operation principle：Chamber 1 is evacuated down to pressure 5x10 first-2Below mbar is filled with argon gas control pressure in 1-
Under 50mbar environment, water-cooled induction coil 5 is powered, and graphite crucible 2 is heated with electromagnetic induction principle, when heating temperature reaches
2100 DEG C or more, silicon carbide powder 13 starts distillation and becomes Si, Si2C、SiC2Gases are waited, and are passed along temperature gradient from high-temperature region
Depositing crystalline forms single-crystal silicon carbide at the defeated seed crystal to lower temperature region, by the depositing crystalline time of 5-10 days, completes
Silicon carbide monocrystal growth.
In crystal growing process, actual temperature is measured by infrared pyrometer 9, and two thermocouples 12 need to adjust position
As consistent, make measuring temperature identical, and measuring temperature control avoids temperature excessively high and damage between 1500 DEG C -1600 DEG C.
Temperature control should be slow change in growth course, when discovery 9 measuring temperature variable quantity of infrared pyrometer and thermocouple 12
When the temperature variation trend of measurement is inconsistent, represent infrared pyrometer 9 may, carbon dirty because of eyeglass it is fine disperse, gas is disturbed
The factors such as dynamic and be interfered, switch to calculating from the variable quantity for calculating 9 temperature of infrared pyrometer by control software at this time
The variable quantity of 12 temperature of thermocouple, then by PID go to calculate the increase and decrease amplitude of control power, when 9 amount of infrared pyrometer
Testing temperature variable quantity and the temperature variation that thermocouple 12 measures revert to trend it is consistent when, then switch back into calculating with infrared ray height
The variable quantity of temperature 9 temperature of meter, avoids because the interference of short time infrared pyrometer 9 causes temperature controlled exception, and final
Crystal quality is caused to be abnormal.
The utility model measures actual growth temperature with infrared pyrometer, can in monocrystalline crystallization process in order to avoid growing
Can because observation eyeglass is dirty, carbon it is fine disperse, the factors such as gas disturbance influence the accuracy of temperature survey, in addition install two heat additional
Galvanic couple auxiliary monitoring temperature, when finding that infrared pyrometer measurement temperature change and thermocouple measuring temperature variation are inconsistent,
The variable quantity for calculating electric thermo-couple temperature is switched to from the variable quantity for calculating infrared pyrometer temperature by control software, then is passed through
PID goes to calculate the increase and decrease amplitude of control power, to avoid measurement problem temperature is caused to control exception, and then influences crystal
Quality.The temperature of precision control grower, actual temperature, which can be controlled, to be less than in design temperature deviation within ± 1 DEG C, can be with
It goes to observe the symmetrical implementations of radial symmetry gradient by the temperature of two thermocouple measurements, and can thereby result adjusting and optimizing give birth to
Growth device, to grow higher-quality crystal.
In the description of the utility model, it is to be understood that term " coaxial ", " bottom ", " one end ", " top ", " in
Portion ", " other end ", " on ", " one side ", " top ", " interior ", " forepart ", " center ", the orientation of the instructions such as " both ends " or position close
Be for based on orientation shown in the drawings or position relationship, be for only for ease of description the utility model and simplify description rather than
Indicate or imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore cannot
It is interpreted as the limitation to the utility model.
In the utility model, unless otherwise clearly defined and limited, term " installation ", " setting ", " connection ", " Gu
It is fixed ", the terms such as " being screwed on " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；
Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary, it can be with
It is the interaction relationship of connection inside two elements or two elements, unless otherwise restricted clearly, for this field
For those of ordinary skill, concrete meaning of the above-mentioned term in the utility model can be understood as the case may be.
While there has been shown and described that the embodiment of the utility model, for the ordinary skill in the art,
It is appreciated that in the case where not departing from the principle of the utility model and spirit can these embodiments be carried out with a variety of variations, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of accurate control temperature device for growing single-crystal silicon carbide, including cavity (1) and arranged on the in vivo graphite crucible of chamber
(2), graphite cover (3), graphite soft felt insulating layer (4), induction coil (5), the graphite cover (3) are located at the top of graphite crucible (2)
The graphite crucible (2) is closed, graphite cover (3) the medial center region is bonded with seed wafer (6), the graphite soft felt heat preservation
Layer (4) is coated around the graphite crucible (2), top, bottom, the induction coil (5) is around graphite soft felt heat preservation
Layer (4) is set, it is characterised in that：Graphite crucible (2) fixed placement is on bottom shore (7), the graphite soft felt heat preservation
A quartz tube (8) is arranged between layer (4) and induction coil (5), cavity (1) overcentre is provided with infrared pyrometer
(9), graphite soft felt insulating layer (4) center at the top of the graphite cover (3) corresponds to the infrared pyrometer (9) and offers measurement
Hole (10), graphite soft felt insulating layer (4) the top center both sides symmetrically offer installing port (11), the installing port (11) point
The thermocouple (12) stretched into above cavity (1) is not mounted with.
2. a kind of accurate control temperature device for growing single-crystal silicon carbide according to claim 1, it is characterised in that：It is described
The thickness of graphite crucible (2) and graphite cover (3) is 5-20mm.
3. a kind of accurate control temperature device for growing single-crystal silicon carbide according to claim 1, it is characterised in that：It is described
The silicon carbide powder (13) of purity 5N-6N is placed in graphite crucible (2).
4. a kind of accurate control temperature device for growing single-crystal silicon carbide according to claim 1, it is characterised in that：It is described
A diameter of 5-10mm of installing port (11), depth are a half thickness of the graphite soft felt insulating layer (4).
5. a kind of accurate control temperature device for growing single-crystal silicon carbide according to claim 1, it is characterised in that：It is described
The distance of two thermocouples (12) is the 1/2-4/5 of graphite crucible (2) diameter, and it is outer that the thermocouple (12) is coated with ceramics protection
Shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721446601.0U CN207376143U (en) | 2017-11-02 | 2017-11-02 | A kind of accurate control temperature device for growing single-crystal silicon carbide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721446601.0U CN207376143U (en) | 2017-11-02 | 2017-11-02 | A kind of accurate control temperature device for growing single-crystal silicon carbide |
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| CN207376143U true CN207376143U (en) | 2018-05-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110872727A (en) * | 2018-08-29 | 2020-03-10 | 北京北方华创微电子装备有限公司 | Reaction furnace and cooling method |
| CN112313369A (en) * | 2018-06-20 | 2021-02-02 | 信越半导体株式会社 | Silicon carbide single crystal growth apparatus and method for producing silicon carbide single crystal |
-
2017
- 2017-11-02 CN CN201721446601.0U patent/CN207376143U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112313369A (en) * | 2018-06-20 | 2021-02-02 | 信越半导体株式会社 | Silicon carbide single crystal growth apparatus and method for producing silicon carbide single crystal |
| CN110872727A (en) * | 2018-08-29 | 2020-03-10 | 北京北方华创微电子装备有限公司 | Reaction furnace and cooling method |
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