CN109137076A - A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide - Google Patents
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide Download PDFInfo
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- CN109137076A CN109137076A CN201811209666.2A CN201811209666A CN109137076A CN 109137076 A CN109137076 A CN 109137076A CN 201811209666 A CN201811209666 A CN 201811209666A CN 109137076 A CN109137076 A CN 109137076A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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Abstract
It include graphite cover and graphite crucible the invention discloses a kind of fixed device of seed wafer for growing single-crystal silicon carbide and its application method, device；Circular hole is provided with below graphite cover；Annular ditch groove is provided in circular hole；Annular ditch groove is used to fix graphite clamp bracket；One end of graphite clamping bracket is fixedly connected with graphite cover, and the other end is used to grip seed wafer；Graphite clamping bracket using 6 groups~12 groups be symmetrically arranged circlewise in the form of be arranged；Seed wafer lower part is used to grow single-crystal silicon carbide.The fixed device of seed wafer that the present invention grows single-crystal silicon carbide goes the method for fixed seed wafer to carry out crystal growth in a manner of mechanical grip, ensure that seed wafer be free to prolonged expansion during the growth process, will not because of and viscose uneven thickness different from the thermal expansion coefficient of graphite and stomata there are the problem of and cause the formation of defect in growth course.
Description
Technical field
The present invention relates to semiconductor manufacturing apparatus technical fields, and in particular to a kind of seed wafer for growing single-crystal silicon carbide is solid
Determine device and its application method.
Background technique
For silicon carbide monocrystal growth with physical vapor transport (PVT) for main growth pattern, difficulty is very high, must at present
Silicon carbide powder must be directly sublimed into Si, SiC under environment under low pressure at 2100 DEG C or more2、Si2C gas, and along temperature ladder
Degree is transferred to depositing crystalline from the seed crystal of lower temperature region from high-temperature region.
The fixed form of general seed wafer is glutinous with binder or carbon paste etc. by seed wafer and graphite cover based on bonding mode
It is combined, and heats up and binder is allowed to solidify, fallen off with preventing seed wafer from removing in crystal growing process.But seed wafer with
The thermal expansion coefficient of graphite cover is different, leads to aufwuchsplate warpage and generates stress, crystal quality is influenced, including the shape of defect
At, crystalline quality etc., and as the crystal of growth is more and more big, this situation is also more serious.And seed wafer and graphite
The adhesive interface of lid has also been easy uneven thickness, has the case where stomata and gap, and the temperature of seed wafer is uneven when causing to grow
It is even, the formation of defect is similarly caused, and then affect crystal quality.
In order to avoid above problem generation, many companies are had studied without using bonding mode and the mode for not contacting graphite cover
Go fixed seed wafer, as DOW CORNING a series of United States Patent (USP)s (US9797064, US9738991, US9279192 etc.) with
And United States Patent (USP) (US9512542) of GTAT etc., it both provides and fixes seed wafer not contact graphite cover design, but there are still
Some problems, cannot good meet demand.
Summary of the invention
The present invention is in view of the above-mentioned problems, the seed wafer for providing a kind of growth single-crystal silicon carbide fixes device and its user
Method, is not exposed to graphite cover by one kind, and the method for fixing seed wafer is gone to carry out crystal growth in a manner of mechanical grip.
Technical solution used by the present invention solves the above problems is: a kind of fixed dress of the seed wafer growing single-crystal silicon carbide
It sets, device includes graphite cover 13 and graphite crucible 11；Circular hole is provided with below graphite cover 13；Annular ditch groove is provided in circular hole；
Annular ditch groove is used to fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used
To grip seed wafer 15；Graphite clamping bracket 31 using 6 groups~12 groups be symmetrically arranged circlewise in the form of be arranged；Seed crystal
15 lower part of piece is used to grow single-crystal silicon carbide 16.Wherein, the arrangement mode that piles of graphite clamping bracket supports fixed seed wafer can
So that the contact area of graphite and seed wafer reaches minimum, seed wafer is allowed to be free to extend at high operating temperatures, it will not
By the non-uniform influence of difference and adhesive surface of graphite thermal expansion coefficient, to avoid during growing carborundum crystals
The defective unfavorable condition generated with stress occurs, and the symmetrical structure of multiple groups can guarantee the pendulum of the steady safety of seed wafer
It puts.
Further, the material of graphite cover 13 and graphite crucible 11 is density in 1.7g/cm3~1.8g/cm3Between, ash content
Graphite less than 20ppm.
Further, the size of circular hole are as follows: deep 3mm~5mm, diameter are 2mm~5mm bigger than the diameter of seed wafer.
Further, the length of graphite clamping bracket 31 is 10mm~50mm.Wherein, the length of graphite clamping bracket can be with
It is adjusted according to thermal field axial-temperature gradient, to obtain optimal growth position.
Further, the material selection graphite soft felt of insulating layer 12 or the hard felt of graphite.
Further, seed wafer 15 can be used for single-crystal silicon carbide 16 of the growth size at 4 cun~6 cun.
Further, 15 diameter of seed wafer is 104mm~108mm when single-crystal silicon carbide 16 is 4 cun.
Further, 15 diameter of seed wafer is 154mm~158mm when single-crystal silicon carbide 16 is 6 cun.
Further, graphite clamping bracket 31 is controlled in the width for gripping 15 that end of seed wafer in 2mm~4mm.Its
In, during the early stages of development, seed wafer edge can be etched 1~2mm to single-crystal silicon carbide, by the fixed seed wafer of graphite clamping bracket
The width control at that end in 2mm~4mm is guaranteeing that seed wafer can also be prevented in the smallest situation of seed wafer contact area
It can not be supported and fall due to erosion area becomes smaller.
Another object of the present invention is to provide a kind of uses of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide
Method includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connects, and the other end is smoothly clamped seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, environment of the control pressure in 1mbar~50mbar；Wherein when growth conductivity type crystal, impurity gas is preferably nitrogen, growth
Semi-insulating crystal, impurity gas are preferably hydrogen, chlorine；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2100 DEG C~2400 DEG C, is kept for 5 days~10 days, completes single-crystal silicon carbide crystal growth.Wherein, sic raw material at such a temperature
Start distillation and becomes Si, Si2C、SiC2Equal gases, and along temperature gradient from crucible bottom high-temperature region be transferred to crucible top compared with
It is deposited at the seed crystal in low temperature region, and gradually crystallization forms single-crystal silicon carbide.
The invention has the advantages that
(1) the fixed device of the seed wafer of present invention growth single-crystal silicon carbide is that one kind is not exposed to graphite cover, without using viscous
Conjunction mode, and the method for fixing seed wafer is gone in a manner of mechanical grip to carry out crystal growth, it is ensured that seed wafer was being grown
It is free to prolonged expansion in journey, it will not be because of and viscose uneven thickness different from the thermal expansion coefficient of graphite and stomata
There are the problem of and cause the formation of defect in growth course；
(2) the fixed device of the seed wafer of present invention growth single-crystal silicon carbide reaches the contact area of graphite and seed wafer most
Smallization, allows seed wafer to be free to extend at high operating temperatures, not will receive the difference of the graphite thermal coefficient of expansion, and bonding
The non-uniform influence in face occurs to avoid the unfavorable condition generated with stress defective during growing carborundum crystals；
(3) the fixed device of the seed wafer of present invention growth single-crystal silicon carbide can grow the carborundum crystals of high quality,
And apparatus structure is simple, easily processed into type.
Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention.
Below with reference to figure, the present invention is described in further detail.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is the seed wafer fixture structure schematic diagram one for growing single-crystal silicon carbide.
Fig. 2 is the partial enlarged view of graphite clamping bearing attachment position.
Fig. 3 is the seed wafer fixture structure schematic diagram two for growing single-crystal silicon carbide.
Fig. 4 is the seed wafer fixture structure schematic diagram three for growing single-crystal silicon carbide.
In the figure, it is marked as 11 graphite crucibles, 12 insulating layers, 13 graphite covers, 14 raw materials, 15 seed wafers, 16 single-crystal silicon carbides,
17 silicon carbide polycrystalline structures, 21 induction coils, 22 vacuum cavities, 31 graphite clamping brackets.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Embodiment 1
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide
A kind of fixed device of the seed wafer of growth single-crystal silicon carbide as shown in figures 1-4, device includes graphite cover 13 and stone
The material of black crucible 11, graphite cover 13 and graphite crucible 11 is density 1.8g/cm3, ash content be less than 20ppm graphite；Graphite cover
13 lower sections are provided with deep 3mm, diameter 3mm circular hole bigger than the diameter of seed wafer；Annular ditch groove is provided in circular hole；Annular ditch groove is used
To fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used to grip
Seed wafer 15, the contact area of graphite clamping bracket and seed wafer can be reduced by gripping seed wafer, make seed wafer free
Extend；Graphite clamping bracket 31 using 10 groups be symmetrically arranged circlewise in the form of be arranged；15 lower part of seed wafer is used to grow carbon
SiClx monocrystalline 16；Wherein, the length of graphite clamping bracket 31 is 10mm；The material selection graphite soft felt or graphite of insulating layer 12 are hard
Felt；Seed wafer 15 can be used for growing 4 cun of single-crystal silicon carbide 16, and graphite clamping bracket 31 is gripping 15 that end of seed wafer
Width is controlled in 2mm；Insulating layer 12 is provided with around graphite cover 13 and graphite crucible 11.
The application method of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide, includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connect, the other end be smoothly clamped diameter be 104mm 4H crystal form seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, control pressure are controlled in 30mbar environment below, the concentration for being passed through nitrogen 1017~1018cm-3；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2200 DEG C, is kept for 5 days, obtains the crystal that crystal thickness is 14mm；
Step S40 takes out the crystal that step S30 is obtained, the graphite clamping bracket 31 being attached to around crystal is removed, into
Row outer diameter is round as a ball, and poly-region is all removed, and is worked into standard size, and the processes such as sliced, grinding, polishing obtain diameter
For the silicon carbide substrates of 100mm.
The crystal obtained using contourgraph measurement step S30, the angularity in crystalline silicon face only have 10 μm, with seed wafer phase
When, it was demonstrated that seed wafer is not affected by external force and influences and more serious warpage is caused to occur during the growth process；The carbon that step S40 is obtained
Silicon substrate resistance value is 0.02ohm-cm；KOH corrosion is carried out to it, and 13 regions is taken to observe defect under an optical microscope
Distribution situation, obtained average data are MPD:0.12cm-2, TSD:460cm-2, BPD:880cm-2。
Embodiment 2
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide
A kind of fixed device of the seed wafer of growth single-crystal silicon carbide as shown in figures 1-4, device includes graphite cover 13 and stone
The material of black crucible 11, graphite cover 13 and graphite crucible 11 is density 1.7g/cm3, ash content be less than 20ppm graphite；Graphite cover
13 lower sections are provided with deep 5mm, diameter 2mm circular hole bigger than the diameter of seed wafer；Annular ditch groove is provided in circular hole；Annular ditch groove is used
To fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used to grip
Seed wafer 15, the contact area of graphite clamping bracket and seed wafer can be reduced by gripping seed wafer, make seed wafer free
Extend；Graphite clamping bracket 31 using 6 groups be symmetrically arranged circlewise in the form of be arranged；15 lower part of seed wafer is used to grow carbonization
Silicon single crystal 16；Wherein, the length of graphite clamping bracket 31 is 20mm；The material selection graphite soft felt or graphite of insulating layer 12 are hard
Felt；Seed wafer 15 can be used for growing 4 cun of single-crystal silicon carbide 16, and graphite clamping bracket 31 is gripping 15 that end of seed wafer
Width is controlled in 4mm；Insulating layer 12 is provided with around graphite cover 13 and graphite crucible 11.
The application method of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide, includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connect, the other end be smoothly clamped diameter be 108mm 4H crystal form seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, control pressure are controlled in the environment of 30mbar~50mbar, the concentration for being passed through nitrogen 1017~1018cm-3；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2400 DEG C, is kept for 8 days, obtains the crystal that crystal thickness is 15mm；
Step S40 takes out the crystal that step S30 is obtained, the graphite clamping bracket 31 being attached to around crystal is removed, into
Row outer diameter is round as a ball, and poly-region is all removed, and is worked into standard size, and the processes such as sliced, grinding, polishing obtain diameter
For the silicon carbide substrates of 100mm.
The crystal obtained using contourgraph measurement step S30, the angularity in crystalline silicon face only have 10 μm, with seed wafer phase
When, it was demonstrated that seed wafer is not affected by external force and influences and more serious warpage is caused to occur during the growth process；The carbon that step S40 is obtained
Silicon substrate resistance value is 0.023ohm-cm；KOH corrosion is carried out to it, and takes 13 regions to observe under an optical microscope and lacks
Distribution situation is fallen into, obtained average data is MPD:0.22cm-2, TSD:220cm-2, BPD:630cm-2。
Embodiment 3
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide
A kind of fixed device of the seed wafer of growth single-crystal silicon carbide as shown in figures 1-4, device includes graphite cover 13 and stone
The material of black crucible 11, graphite cover 13 and graphite crucible 11 is density 1.7g/cm3, ash content be less than 20ppm graphite；Graphite cover
13 lower sections are provided with deep 4mm, diameter 5mm circular hole bigger than the diameter of seed wafer；Annular ditch groove is provided in circular hole；Annular ditch groove is used
To fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used to grip
Seed wafer 15, the contact area of graphite clamping bracket and seed wafer can be reduced by gripping seed wafer, make seed wafer free
Extend；Graphite clamping bracket 31 using 12 groups be symmetrically arranged circlewise in the form of be arranged；15 lower part of seed wafer is used to grow carbon
SiClx monocrystalline 16；Wherein, the length of graphite clamping bracket 31 is 40mm；The material selection graphite soft felt or graphite of insulating layer 12 are hard
Felt；Seed wafer 15 can be used for growing 4 cun of single-crystal silicon carbide 16, and graphite clamping bracket 31 is gripping 15 that end of seed wafer
Width is controlled in 3mm；Insulating layer 12 is provided with around graphite cover 13 and graphite crucible 11.
The application method of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide, includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connect, the other end be smoothly clamped diameter be 106mm 4H crystal form seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, control pressure are controlled in the environment of 1mbar~30mbar, the concentration for being passed through nitrogen 1017~1018cm-3；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2100 DEG C, is kept for 6 days, obtains the crystal that crystal thickness is 14mm；
Step S40 takes out the crystal that step S30 is obtained, the graphite clamping bracket 31 being attached to around crystal is removed, into
Row outer diameter is round as a ball, and poly-region is all removed, and is worked into standard size, and the processes such as sliced, grinding, polishing obtain diameter
For the silicon carbide substrates of 100mm.
The crystal obtained using contourgraph measurement step S30, the angularity in crystalline silicon face only have 10 μm, with seed wafer phase
When, it was demonstrated that seed wafer is not affected by external force and influences and more serious warpage is caused to occur during the growth process；The carbon that step S40 is obtained
Silicon substrate resistance value is 0.022ohm-cm；KOH corrosion is carried out to it, and takes 13 regions to observe under an optical microscope and lacks
Distribution situation is fallen into, obtained average data is MPD:0.26cm-2, TSD:150cm-2, BPD:680cm-2。
Embodiment 4
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide
A kind of fixed device of the seed wafer of growth single-crystal silicon carbide as shown in figures 1-4, device includes graphite cover 13 and stone
The material of black crucible 11, graphite cover 13 and graphite crucible 11 is density 1.8g/cm3, ash content be less than 20ppm graphite；Graphite cover
13 lower sections are provided with deep 3mm, diameter 4mm circular hole bigger than the diameter of seed wafer；Annular ditch groove is provided in circular hole；Annular ditch groove is used
To fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used to grip
Seed wafer 15, the contact area of graphite clamping bracket and seed wafer can be reduced by gripping seed wafer, make seed wafer free
Extend；Graphite clamping bracket 31 using 8 groups be symmetrically arranged circlewise in the form of be arranged；15 lower part of seed wafer is used to grow carbonization
Silicon single crystal 16；Wherein, the length of graphite clamping bracket 31 is 50mm；The material selection graphite soft felt or graphite of insulating layer 12 are hard
Felt；Seed wafer 15 can be used for growing 6 cun of single-crystal silicon carbide 16, and graphite clamping bracket 31 is gripping 15 that end of seed wafer
Width is controlled in 3mm；Insulating layer 12 is provided with around graphite cover 13 and graphite crucible 11.
The application method of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide, includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connect, the other end be smoothly clamped diameter be 154mm crystal form seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, control pressure are controlled in the environment of 20mbar~40mbar, the concentration for being passed through nitrogen 1017~1018cm-3；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2300 DEG C, is kept for 5 days, obtains the crystal that crystal thickness is 15mm；
Step S40 takes out the crystal that step S30 is obtained, the graphite clamping bracket 31 being attached to around crystal is removed, into
Row outer diameter is round as a ball, and poly-region is all removed, and is worked into standard size, and the processes such as sliced, grinding, polishing obtain diameter
For the silicon carbide substrates of 150mm.
The crystal obtained using contourgraph measurement step S30, the angularity in crystalline silicon face only have 10 μm, with seed wafer phase
When, it was demonstrated that seed wafer is not affected by external force and influences and more serious warpage is caused to occur during the growth process；The carbon that step S40 is obtained
Silicon substrate resistance value is 0.021ohm-cm；KOH corrosion is carried out to it, and takes 13 regions to observe under an optical microscope and lacks
Distribution situation is fallen into, obtained average data is MPD:0.34cm-2, TSD:360cm-2, BPD:1720cm-2。
Embodiment 5
A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide
A kind of fixed device of the seed wafer of growth single-crystal silicon carbide as shown in figures 1-4, device includes graphite cover 13 and stone
The material of black crucible 11, graphite cover 13 and graphite crucible 11 is density 1.7g/cm3, ash content be less than 20ppm graphite；Graphite cover
13 lower sections are provided with deep 5mm, diameter 4mm circular hole bigger than the diameter of seed wafer；Annular ditch groove is provided in circular hole；Annular ditch groove is used
To fix graphite clamp bracket 31；One end of graphite clamping bracket is fixedly connected with graphite cover 13, and the other end is used to grip
Seed wafer 15, the contact area of graphite clamping bracket and seed wafer can be reduced by gripping seed wafer, make seed wafer free
Extend；Graphite clamping bracket 31 using 8 groups be symmetrically arranged circlewise in the form of be arranged；15 lower part of seed wafer is used to grow carbonization
Silicon single crystal 16；Wherein, the length of graphite clamping bracket 31 is 30mm；The material selection graphite soft felt or graphite of insulating layer 12 are hard
Felt；Seed wafer 15 can be used for growing 6 cun of single-crystal silicon carbide 16, and graphite clamping bracket 31 is gripping 15 that end of seed wafer
Width is controlled in 4mm；Insulating layer 12 is provided with around graphite cover 13 and graphite crucible 11.
The application method of the fixed device of the seed wafer of above-mentioned growth single-crystal silicon carbide, includes the following steps:
The raw material 14 of single-crystal silicon carbide is placed in graphite crucible 11 by step S10, by 31 one end of graphite clamping bracket with
Graphite cover 13 connect, the other end be smoothly clamped diameter be 158mm 4H crystal form seed wafer 15；
Step S20 will be evacuated down to pressure 5 × 10 in graphite crucible 11-2Mbar is hereinafter, be filled with argon gas as protection gas
Body, control pressure are controlled in the environment of 5mbar~30mbar, the concentration for being passed through nitrogen 1017~1018cm-3；
Induction coil 21 is powered by step S30, graphite crucible is heated with electromagnetic induction principle, when heating temperature reaches
It 2200 DEG C, is kept for 10 days, obtains the crystal that crystal thickness is 16mm；
Step S40 takes out the crystal that step S30 is obtained, the graphite clamping bracket 31 being attached to around crystal is removed, into
Row outer diameter is round as a ball, and poly-region is all removed, and is worked into standard size, and the processes such as sliced, grinding, polishing obtain diameter
For the silicon carbide substrates of 150mm.
The crystal obtained using contourgraph measurement step S30, the angularity in crystalline silicon face only have 10 μm, with seed wafer phase
When, it was demonstrated that seed wafer is not affected by external force and influences and more serious warpage is caused to occur during the growth process；The carbon that step S40 is obtained
Silicon substrate resistance value is 0.022ohm-cm；KOH corrosion is carried out to it, and takes 13 regions to observe under an optical microscope and lacks
Distribution situation is fallen into, obtained average data is MPD:0.32cm-2, TSD:480cm-2, BPD:2560cm-2。
These are only the preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of fixed device of seed wafer for growing single-crystal silicon carbide, which is characterized in that described device include graphite cover (13) and
Graphite crucible (11)；Circular hole is provided with below the graphite cover (13)；Annular ditch groove is provided in the circular hole；The annular groove
Slot is used to fix graphite clamp bracket (31)；One end of the graphite clamping bracket is fixedly connected with graphite cover (13), the other end
For gripping seed wafer (15)；The graphite clamping bracket (31) use 6 groups~12 groups to be symmetrically arranged shape circlewise
Formula setting；Seed wafer (15) lower part is used to grow single-crystal silicon carbide (16).
2. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the graphite cover
(13) and the material of graphite crucible (11) is density in 1.7g/cm3~1.8g/cm3Between, ash content is less than the graphite of 20ppm.
3. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the circular hole
Size are as follows: deep 3mm~5mm, diameter are 2mm~5mm bigger than the diameter of seed wafer.
4. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the graphite folder
The length for holding bracket (31) is 10mm~50mm.
5. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the insulating layer
(12) material selection graphite soft felt or the hard felt of graphite.
6. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the seed wafer
(15) it can be used for single-crystal silicon carbide (16) of the growth size at 4 cun~6 cun.
7. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 6, which is characterized in that the silicon carbide
Seed wafer (15) diameter is 104mm~108mm when monocrystalline (16) is 4 cun.
8. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 6, which is characterized in that the silicon carbide
Seed wafer (15) diameter is 154mm~158mm when monocrystalline (16) is 6 cun.
9. the fixed device of seed wafer of growth single-crystal silicon carbide according to claim 1, which is characterized in that the graphite folder
Bracket (31) is held to control in the width for gripping seed wafer (15) that end in 2mm~4mm.
10. it is a kind of according to claim 1~any one of 9 described in growth single-crystal silicon carbide the fixed device of seed wafer use
Method, which comprises the steps of:
The raw material (14) of single-crystal silicon carbide is placed in graphite crucible (11), by graphite clamping bracket (31) one end by step S10
It is connect with graphite cover (13), the other end is smoothly clamped seed wafer (15)；
Step S20 will be evacuated down to pressure in 5 × 10-2mbar in graphite crucible (11) hereinafter, being filled with argon gas as protection gas
Body, environment of the control pressure in 1mbar~50mbar；
Induction coil (21) are powered by step S30, graphite crucible (11) are heated with electromagnetic induction principle, when heating temperature reaches
It 2100 DEG C~2400 DEG C, is kept for 5 days~10 days, completes single-crystal silicon carbide crystal growth.
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| CN110453285A (en) * | 2019-09-09 | 2019-11-15 | 福建北电新材料科技有限公司 | Crucible cover and crucible |
| CN110541195A (en) * | 2019-08-19 | 2019-12-06 | 河北同光晶体有限公司 | seed crystal installation device of low-stress silicon carbide single crystal and crystal growth process |
| CN112593289A (en) * | 2021-01-29 | 2021-04-02 | 芯璨半导体科技(山东)有限公司 | Device and method for improving quality of growing silicon carbide single crystal |
| CN112695379A (en) * | 2019-10-22 | 2021-04-23 | Skc株式会社 | Seed crystal bonding layer, method for manufacturing laminated body and method for manufacturing wafer |
| CN112746314A (en) * | 2019-10-29 | 2021-05-04 | Skc株式会社 | Silicon carbide crystal ingot, method for producing silicon carbide wafer, and system for growing silicon carbide crystal ingot and silicon carbide wafer |
| CN115537927A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide single crystal ingot growth system and method for preparing low-basal plane dislocation |
| CN116393044A (en) * | 2023-06-06 | 2023-07-07 | 内蒙古晶环电子材料有限公司 | Large-particle (3 mm) SiC material synthesis device and technology |
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| CN110129886A (en) * | 2019-06-26 | 2019-08-16 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | A kind of seed crystal fixed device in silicon carbide monocrystal growth |
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| CN112695379A (en) * | 2019-10-22 | 2021-04-23 | Skc株式会社 | Seed crystal bonding layer, method for manufacturing laminated body and method for manufacturing wafer |
| CN112695379B (en) * | 2019-10-22 | 2023-11-03 | 赛尼克公司 | Seed crystal adhesive layer, laminated body preparation method and wafer preparation method |
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| CN115537927A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Silicon carbide single crystal ingot growth system and method for preparing low-basal plane dislocation |
| CN115537927B (en) * | 2022-12-01 | 2023-03-10 | 浙江晶越半导体有限公司 | Silicon carbide single crystal ingot growth system and method for preparing low-basal plane dislocation |
| CN116393044A (en) * | 2023-06-06 | 2023-07-07 | 内蒙古晶环电子材料有限公司 | Large-particle (3 mm) SiC material synthesis device and technology |
| CN116393044B (en) * | 2023-06-06 | 2023-09-08 | 内蒙古晶环电子材料有限公司 | Large-particle SiC material synthesis device and process |
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