CN106400116A - Inclined seed crystal tray for growth of high-quality silicon carbide crystal and growth method of high-quality silicon carbide crystal - Google Patents
Inclined seed crystal tray for growth of high-quality silicon carbide crystal and growth method of high-quality silicon carbide crystal Download PDFInfo
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- CN106400116A CN106400116A CN201610879687.XA CN201610879687A CN106400116A CN 106400116 A CN106400116 A CN 106400116A CN 201610879687 A CN201610879687 A CN 201610879687A CN 106400116 A CN106400116 A CN 106400116A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention relates to an inclined seed crystal tray for growth of a high-quality silicon carbide crystal and a growth method of the high-quality silicon carbide crystal. The range of an included angle between a plane on which the seed crystal tray is in contact with a seed crystal and a horizontal direction is that alpha is more than 0 degree and smaller than or equal to 30 degrees. When the inclined seed crystal tray provided by the invention is adopted, the defect density of the prepared crystal can be effectively reduced, and a deflection-angle-free wafer can be directly selected as a seed crystal, so that the cost of preparing the crystal is effectively reduced.
Description
Technical field
The invention belongs to carborundum crystals field and in particular to a kind of oblique seed crystal support of growing silicon carbice crystals and
The method growing carborundum crystals using this oblique seed crystal support.
Background technology
Carborundum (SiC) monocrystal material has broad stopband, high heat conductance, high electronics saturation migration rate, high breakdown electric field
Etc. property, there is obvious superiority compared with first generation semi-conducting material and second filial generation semi-conducting material it is considered to be manufacturing
The preferable semi-conducting material of opto-electronic device, Deep trench termination, power electronic devices, in white-light illuminating, optical storage, screen
The aspects such as display, space flight and aviation, hyperthermia radiation environment, oil exploration, automatization, radar and communications, automotive circuit diagram have extensively
Application.
The subject matter of restriction silicon carbide device widespread adoption is low-defect-density silicon carbide crystal substrate at present
Preparation cost.The preparation of large scale low-defect-density carborundum crystals is the emphasis of carborundum crystals research all the time, research experience
Show that seed crystal defect is easy to extend along the c-axis direction of growth, and if can be greatly decreased along a direction of principal axis growth defect, but thing
Reason gas phase transmission (PVT) method also cannot obtain large-sized a direction seed crystal, at present so research worker is in order to reduce SiC crystal
Defect concentration, generally adopts drift angle seeded growth crystal, makes seed crystal defect gradually extend discharge crystal.Simultaneously in order to reduce into
This, silicon carbide substrates are adjusted to the seed crystal adopting 4 ° of drift angle at present from the seed crystal of 8 ° of original adoption drift angle.It is known that crystal is adopted
Take drift angle can reduce for its utilization rate, effective substrate wafer of acquisition can be less, but actually enter civil area application and also need
Continue to reduce silicon carbide substrates preparation cost to 1/2～1/3.
Cree company of the U.S. is devoted to the increment study of low basal plane dislocation SiC crystal always, the domestic patent applied at it
A kind of method that disclosed in CN101194052A, employing inclination angle seed crystal reduces crystal dislocation density.However, as described above, adopting
Inclination angle seed crystal can be reduced by rate and increase cost.Another domestic patent CN101027433A applied at it then discloses
A kind of seedholder combination, makes seeded growth face and the angular range of horizontal direction be 0 °<α≤20 °, provide schematic diagram from it
It can be found that bigger with angle, the space difference that crystal periphery exists is bigger, and this will lead to crystal ambient temperature field more to be differed
The problem causing.
Content of the invention
For the problems referred to above, it is an object of the invention to provide a kind of can effectively reduction prepare crystal defect concentration and
No drift angle chip can be directly selected and make seed crystal, and the consistent oblique seed crystal of high-quality growing silicon carbice crystals of uniform temperature fields
Support and the method for growing silicon carbide crystal with high quality.
On the one hand, the present invention provides a kind of rake angle seed crystal support, described seed crystal support and the seed crystal of growing silicon carbice crystals
The plane of contact is 0 ° with the angular range of horizontal direction<α≤30°.
The seed crystal support of the present invention can be used for physical vapor transport technology (PVT) growth carborundum crystals.Using the present invention
Rake angle seed crystal support effectively reduction not only can prepare the defect concentration of crystal, no drift angle chip can also be directly selected and make seed
Crystalline substance, thus the cost of effectively save crystal preparation.There is temperature compared to the seedholder combination of patent CN101027433A
Inconsistent feature, the present invention is then directly to carry out rake angle processing to seed crystal support, has that operational approach is simply effective, angle
Scope is bigger and the consistent advantage of uniform temperature fields, can also grow acquisition carbonization more than 45 ° for the drift angle using alternative manner
Silicon crystal.
It is preferred that described seed crystal support is graphite seed support.
It is preferred that the aufwuchsplate of described seed crystal support includes carborundum polycrystal layer, carbon film, the carbide of refractory metal, boron
At least one single or multiple lift membrane material in compound and nitride.By above-mentioned membrane material is arranged on aufwuchsplate, permissible
Effective protection seed crystal, reduces the generation of crystal defect.
It is preferred that described refractory metal is selected from least one in tungsten, tantalum, molybdenum, osmium, iridium, titanium, niobium, zirconium and rhenium.
On the other hand, the present invention provides a kind of method of growing silicon carbide crystal with high quality, and silicon carbide seed is fixed on
On the aufwuchsplate of any one seed crystal support above-mentioned, carborundum crystals are grown using physical vapor transport growing technology.
According to the present invention, not only can effectively reduce the extension in aufwuchsplate for the dislocation defects such as micro-pipe, can also pass through many
Secondary angle iteration growth obtains the carborundum crystals of bigger drift angle, thus obtaining the high quality crystal of low-dislocation-density.
It is preferred that also including being processed as the carborundum crystals of gained the life that chip is fixed on described seed crystal support as seed crystal
In long face, using physical vapor transport growing technology grow carborundum crystals regrow step；Described regrow step
Iteration once more than.
The drift angle of the carborundum crystals of gained of the present invention can reach more than 45 °.
It is preferred that described seed crystal is fixed on the aufwuchsplate of described seed crystal support by binding agent or mechanical snap ring mode.
It is preferred that described adhesive be pyrographite glue, AB glue, phenolic resin glue, in epoxide-resin glue and carbohydrate gum extremely
Few one kind.
The third aspect, the present invention also provides a kind of grower of growing silicon carbice crystals, and it includes：
There is the first side and the crucible of second side contrary with described first side；
It is configured at the growing silicon carbice crystals raw material of described first side；
It is configured at any one seed crystal support above-mentioned of described second side；With
It is fixed on the silicon carbide seed on the aufwuchsplate of described seed crystal support.
Grower using the present invention, it is possible to obtain the high-quality carborundum crystals of low-dislocation-density.
Brief description
Fig. 1 is the structural representation of the oblique seed crystal support with certain angle；
Fig. 2 is the polarisation photo of 4 inch silicon carbide crystal-cut chips of different gradient angle α seed crystal support growths：(a) α=4 °；
(b) α=8 °；(c) α=30 °.
Specific embodiment
Further illustrate the present invention below in conjunction with accompanying drawing and following embodiment it should be appreciated that accompanying drawing and following embodiment
It is merely to illustrate the present invention, and the unrestricted present invention.
For purposes of clarity, certain embodiments of the present invention is described with known method and relevant device for background.
It would be recognized by those skilled in the art that the scope of the present invention is not limited to only these methods and relevant device.More properly, with
SiC growing method and the change and progress of relevant device, the teachings of the present invention will find ready-made answering in these new environment
With.As is conventionally understood, SiC crystal can pass through such as PVT seeded sublimation technique using seeded sublimation system
Growth.On the other hand, seeded sublimation system can include high temperature CVD (HT-CVD) and halogenide CVD (H-CVD) system.
For the high problem of the preparation cost of current large scale low-defect-density carborundum crystals, the invention provides a kind of
The rake angle seed crystal support of growing silicon carbice crystals.
Wherein, seed crystal support is the seed crystal support with constant slope (having certain angle with horizontal plane).Fig. 1 illustrates there is one
The structural representation of the oblique seed crystal support at clamp angle.As shown in figure 1, this required plane contacting with seed crystal of seed crystal support 1 and level side
To A, there is certain angle α.This angle α can be larger scope, such as 0 °<α≤30 ° are it is preferable that 20 °<α≤30°.If α>
30 °, then the crystal that can grow is excessively oblique, and utilization rate is low.
Described seed crystal support can be pure graphite seed support or aufwuchsplate includes carborundum polycrystal layer, carbon film, refractory metal
The graphite seed support of the single or multiple lift membrane material of carbide, boride or nitride.Wherein refractory metal mainly include tungsten,
Tantalum, molybdenum, osmium, iridium, titanium, niobium, zirconium, rhenium.Film layer can be formed on the aufwuchsplate of seed crystal support by conventional film-forming method, its thickness
Can be 1～10mm.
Hereinafter, the method using above-mentioned grower growth carborundum crystals is described.Seed in above-mentioned crystal growing apparatus
Silicon carbide seed 2 is fixed on the inclined-plane of crystal holder 1.The present invention directly adopts the seed crystal support of rake angle, therefore can directly select no
Drift angle chip is as seed crystal, you can prepare the carborundum crystals of low-defect-density, thus the cost of effectively save crystal preparation.When
So, the present invention can also adopt drift angle seed crystal.Seed crystal is fixed on rake angle seed crystal support the present invention, such that it is able to guarantee temperature
Field uniformity.Silicon carbide seed 2 can be fixed by binding agent or mechanical snap ring mode with seed crystal support 1 aufwuchsplate.Described bonding
Agent includes but is not limited to pyrographite glue, AB glue, phenolic resin glue, epoxide-resin glue or carbohydrate gum etc..
Crystal is grown using physical vapor transport growing technology.Seed crystal is located at crucible low-temperature space position, and raw material is located at crucible
High-temperature region position.In one example, using physical vapor transport technology under conditions of 2000～2300 DEG C, 5～30Torr
Growth crystal.
The carborundum crystals wide-angle drift angle growing.The angle of this drift angle is identical with above-mentioned angle α.
It is possible to further there is the chip of wide-angle drift angle as seed crystal using prepare, then it is fixed on above-mentioned oblique greatly
On the seed crystal support of degree, carborundum crystals are grown using physical vapor transport growing technology.This process can be carried out more than once.By
This can obtain the bigger carborundum crystals in drift angle.For example, acquisition drift angle can be grown more than 45 ° using this alternative manner
Carborundum crystals.
To sum up, the present invention is supplied to a kind of low-defect-density growing silicon carbice crystals with having the seed crystal support of constant slope
Method for designing, that is, the required plane contacting with seed crystal of seed crystal support and horizontal direction have certain angle α.The present invention is based on physics
In gas phase transmission technology growth single-crystal silicon carbide method, the aufwuchsplate of seed crystal support and horizontal direction have certain drift angle, then will
Silicon carbide seed is fixed on the inclined-plane of seed crystal support, can obtain the high-quality with certain drift angle by physical vapor transport technology
Carborundum crystals.In addition, the carborundum crystals having more than 45 ° of drift angles also can be obtained by the method successive ignition.
Enumerate embodiment further below to describe the present invention in detail.It will similarly be understood that following examples are served only for this
Invention is further described it is impossible to be interpreted as limiting the scope of the invention, those skilled in the art is according to this
Some nonessential improvement that bright the above is made and adjustment belong to protection scope of the present invention.Following examples are specific
Technological parameter etc. is also only one of OK range example, and that is, those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment 1：
As shown in figure 1, Design and Machining goes out the graphite seed support of gradient angle α=4 ° first, more no 4 inches of drift angle seed crystal is bondd
Solidification, on this seed crystal support, is sic raw material high-temperature region using bottom, and top is that the conventional physical vapor of seed crystal low-temperature space passes
Transferring technology grows 4 inch silicon carbide silicon ingots, processing cutting crystal ingot, obtains the chip polarisation photo as shown in Fig. 2 (a), permissible
Find no drift angle seed crystal after the graphite seed reincarnation length that gradient is 4 °, growth core occurs in that 4 ° of drift angles.
Embodiment 2：
As shown in figure 1, Design and Machining goes out the graphite seed support of gradient angle α=8 ° first, more no 4 inches of drift angle seed crystal is bondd
Solidification, on this seed crystal support, is sic raw material high-temperature region using bottom, and top is that the conventional physical vapor of seed crystal low-temperature space passes
Transferring technology grows 4 inch silicon carbide silicon ingots, processing cutting crystal ingot, obtains the chip polarisation photo as shown in Fig. 2 (b), permissible
Find no drift angle seed crystal after the graphite seed reincarnation length that gradient is 8 °, growth core occurs in that 8 ° of drift angles.
Embodiment 3：
As shown in figure 1, Design and Machining goes out the graphite seed support of gradient angle α=30 ° first, more no 4 inches of drift angle seed crystal is glued
Knot solidification, on this seed crystal support, is sic raw material high-temperature region using bottom, and top is the conventional physical vapor of seed crystal low-temperature space
Transmission technology grows 4 inch silicon carbide silicon ingots, processing cutting crystal ingot, obtains the chip polarisation photo as shown in Fig. 2 (c), can
To find no drift angle seed crystal after the graphite seed reincarnation length that gradient is 30 °, growth core has deviated from out chip.
Embodiment 4：
As shown in figure 1, Design and Machining goes out the graphite seed support of gradient angle α=30 ° first, then will be inclined obtained by embodiment 3
Angle be 30 ° of 4 inches of seed crystal adhesive solidifications on this seed crystal support, be sic raw material high-temperature region using bottom, top be seed crystal
The conventional physical vapor transmission technology of low-temperature space grows 4 inch silicon carbide silicon ingots, processing cutting crystal ingot, it is possible to obtain drift angle reaches
To 60 ° of chip.
Therefore, there is the chip of wide-angle drift angle as seed crystal using what this patent was prepared, oblique greatly in conjunction with this patent
The seed crystal support of degree, can grow carborundum crystals more than 45 ° for the acquisition drift angle using this alternative manner, effectively reduce crystal and lack
Sunken density.It is noted that above-mentioned specific embodiment is that the present invention is described in detail, it should not be to the present invention
Limit.For a person skilled in the art, in the objective without departing from claim and scope, can have various ways and
The change of details.
Claims (10)
1. a kind of growing silicon carbice crystals rake angle seed crystal support it is characterised in that described seed crystal support contact with seed crystal flat
Face is 0 with the angular range of horizontal direction°<α≤30°.
2. the rake angle seed crystal support of growing silicon carbice crystals according to claim 1 is it is characterised in that described seed crystal support
For graphite seed support.
3. the rake angle seed crystal support of growing silicon carbice crystals according to claim 1 and 2 is it is characterised in that described seed
The aufwuchsplate of crystal holder includes at least in carborundum polycrystal layer, carbon film, the carbide of refractory metal, boride and nitride
The single or multiple lift membrane material planted.
4. the rake angle seed crystal support of growing silicon carbice crystals according to claim 3 is it is characterised in that described high-melting-point
Metal is selected from least one in tungsten, tantalum, molybdenum, osmium, iridium, titanium, niobium, zirconium and rhenium.
5. a kind of method of growing silicon carbide crystal with high quality it is characterised in that by silicon carbide seed be fixed on claim 1 to
On the aufwuchsplate of the seed crystal support any one of 4, carborundum crystals are grown using physical vapor transport growing technology.
6. method according to claim 5 is it is characterised in that also include for the carborundum crystals of gained being processed as chip work
It is fixed on the aufwuchsplate of described seed crystal support for seed crystal, using physical vapor transport growing technology growth carborundum crystals again
Growth step；Described regrow step iteration once more than.
7. method according to claim 6 it is characterised in that the drift angle of the carborundum crystals of gained can reach 45 ° with
On.
8. the method according to any one of claim 5 to 7 is it is characterised in that by binding agent or mechanical snap ring mode
Described seed crystal is fixed on the aufwuchsplate of described seed crystal support.
9. method according to claim 8 is it is characterised in that described adhesive is pyrographite glue, AB glue, phenolic resin
At least one in glue, epoxide-resin glue and carbohydrate gum.
10. a kind of grower of growing silicon carbice crystals is it is characterised in that include：
There is the first side and the crucible of second side contrary with described first side；
It is configured at the growing silicon carbice crystals raw material of described first side；
It is configured at the seed crystal support any one of Claims 1-4 of described second side；With
It is fixed on the silicon carbide seed on the aufwuchsplate of described seed crystal support.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107190323A (en) * | 2017-06-06 | 2017-09-22 | 宝鸡文理学院 | A kind of method for growing low defect single-crystal silicon carbide |
| CN107190322A (en) * | 2017-04-01 | 2017-09-22 | 中国科学院上海硅酸盐研究所 | A kind of growing method of the adjustable carborundum polycrystalline ceramics of large scale resistivity |
| CN109722711A (en) * | 2017-10-27 | 2019-05-07 | 上海新昇半导体科技有限公司 | A kind of the SiC growing method and device of regulation doping concentration |
| CN110453285A (en) * | 2019-09-09 | 2019-11-15 | 福建北电新材料科技有限公司 | Crucible cover and crucible |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| CN114481316A (en) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | Method and device for manufacturing silicon carbide crystals |
| CN116815320A (en) * | 2023-06-28 | 2023-09-29 | 通威微电子有限公司 | Silicon carbide crystal growth device and method and silicon carbide crystal |
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| CN101027433A (en) * | 2004-08-10 | 2007-08-29 | 克里公司 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| CN101580964A (en) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | Seed crystal support for growing silicon carbide crystal with high quality |
| CN105525351A (en) * | 2015-12-24 | 2016-04-27 | 中国科学院上海硅酸盐研究所 | Efficient SiC crystal diameter-expanding method |
| CN105734672A (en) * | 2014-12-10 | 2016-07-06 | 北京天科合达半导体股份有限公司 | A method of growing high-quality silicon carbide crystals in an oxygen-containing atmosphere |
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| CN101027433A (en) * | 2004-08-10 | 2007-08-29 | 克里公司 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| CN101580964A (en) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | Seed crystal support for growing silicon carbide crystal with high quality |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107190322A (en) * | 2017-04-01 | 2017-09-22 | 中国科学院上海硅酸盐研究所 | A kind of growing method of the adjustable carborundum polycrystalline ceramics of large scale resistivity |
| CN107190322B (en) * | 2017-04-01 | 2019-06-11 | 中国科学院上海硅酸盐研究所 | A kind of growing method of the adjustable silicon carbide polycrystalline ceramics of large scale resistivity |
| CN107190323A (en) * | 2017-06-06 | 2017-09-22 | 宝鸡文理学院 | A kind of method for growing low defect single-crystal silicon carbide |
| CN109722711A (en) * | 2017-10-27 | 2019-05-07 | 上海新昇半导体科技有限公司 | A kind of the SiC growing method and device of regulation doping concentration |
| CN110453285A (en) * | 2019-09-09 | 2019-11-15 | 福建北电新材料科技有限公司 | Crucible cover and crucible |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| US11499246B2 (en) | 2020-03-30 | 2022-11-15 | Hunan Sanan Semiconductor Co., Ltd. | Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same |
| CN114481316A (en) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | Method and device for manufacturing silicon carbide crystals |
| CN116815320A (en) * | 2023-06-28 | 2023-09-29 | 通威微电子有限公司 | Silicon carbide crystal growth device and method and silicon carbide crystal |
| CN116815320B (en) * | 2023-06-28 | 2024-01-12 | 通威微电子有限公司 | Silicon carbide crystal growth device and method and silicon carbide crystal |
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