CN207498512U - A kind of silicon carbide monocrystal growth device for growing high usage - Google Patents
A kind of silicon carbide monocrystal growth device for growing high usage Download PDFInfo
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- CN207498512U CN207498512U CN201721445455.XU CN201721445455U CN207498512U CN 207498512 U CN207498512 U CN 207498512U CN 201721445455 U CN201721445455 U CN 201721445455U CN 207498512 U CN207498512 U CN 207498512U
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- crucible
- centronucleus
- central member
- silicon carbide
- graphite
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Abstract
The utility model discloses a kind of silicon carbide monocrystal growth devices for growing high usage, including crucible, crucible cover, graphite soft felt insulating layer, induction coil, the crucible cover is located at crucible described in top seal, the crucible cover medial center outburst area is bonded with seed wafer, the graphite soft felt insulating layer is coated around the crucible, top, bottom, the induction coil is set around graphite soft felt insulating layer, bottom centre offers mounting groove in the crucible, a centronucleus central member is placed on the mounting groove, the center filter baffle being adapted is equipped in the centronucleus central member, prostheses baffle ring is provided between the centronucleus central member top and crucible madial wall.The utility model centronucleus central member designs, and resets feed location, improves the raw material distillation steam uniformity for reaching each position, reduces crystal protrusion rate, so as to reduce crystal stress and defect, improve the utilization rate of raw material, reduce raw material usage amount.
Description
Technical field
The utility model is related to silicon carbide monocrystal growth manufacturing field of equipment, specially a kind of carbonization for growing high usage
Monocrystalline silicon growing device.
Background technology
Single-crystal silicon carbide material belongs to the representative of third generation wide bandgap semiconductor materials, has broad stopband, high heat conductance, height
The features such as breakdown electric field, high radiation preventing ability, SiC device can be used for artificial satellite, rocket, radar and communication, re-entry space vehicle,
The key areas such as seafari, earthquake prediction, oil drilling, mechanical processing and automotive circuit diagram.Especially 5G communicates and electricity
The application of electrical automobile.
Silicon carbide monocrystal growth has proven to raw with physical vaporous deposition (PVT) for main growth pattern at present
The most ripe method of long SiC crystal.SiC powders are heated to 2200~2500 DEG C, under the protection of inert atmosphere, make its distillation
Onto cold end seed crystal, crystallization becomes bulk crystals.The key technology of this method has at 2 points, and first is to establish a suitable temperature
, form transport streams of the stable gas phase SiC from high temperature to low temperature, second is that gas phase SiC is formed on seed crystal is good
Good growth interface growth.Meanwhile the pressure of control growth indoor gas is also needed in growth course.
Although conventional physical vapor sedimentation (PVT) growth single-crystal silicon carbide is most widely used, since thermal field designs
On difference, the bad germ nucleus protrusion rate that is easy to cause of the design of many thermal fields is excessive, and utilization rate is too low and crystal protrusion
The crystal stress and defect of the excessive generation of rate.
Utility model content
The purpose of this utility model is to provide a kind of silicon carbide monocrystal growth devices for growing high usage, reset
Feed location improves the raw material distillation steam uniformity for reaching each position, reduces crystal protrusion rate, so as to reduce crystal stress
And defect, the utilization rate of raw material is improved, reduces raw material usage amount, to solve the problems mentioned in the above background technology.
To achieve the above object, the utility model provides following technical solution：A kind of silicon carbide list for growing high usage
Crystals growth device, including crucible, crucible cover, graphite soft felt insulating layer, induction coil, the crucible cover is located at described in top seal
Crucible, the crucible cover medial center outburst area are bonded with seed wafer, and the graphite soft felt insulating layer coats the crucible
Surrounding, top, bottom, the induction coil are set around graphite soft felt insulating layer, and bottom centre offers peace in the crucible
Tankage places a centronucleus central member on the mounting groove, the center filter baffle being adapted, institute is equipped in the centronucleus central member
It states and prostheses baffle ring is provided between centronucleus central member top and crucible madial wall.
Preferably, the graphite soft felt insulating layer be equipped with 1-4 layer, per layer thickness be 5-10mm, the crucible top and under
1-2 layers of graphite soft felt insulating layer are added at the switching in portion more.
Preferably, it is arranged with a quartz tube between the graphite felt insulating layer and induction coil.
Preferably, centronucleus central member porous graphite bucket that is narrow wide and having Nb, Ta coating, prostheses under being
Gap in part between both sides and crucible madial wall is placed with the silicon carbide powder that purity is 5-6N.
Preferably, the center filter baffle is the porous graphite baffle for having Nb, Ta coating, and the prostheses baffle ring is
There is the high-density graphite baffle ring of Nb, Ta coating.
Compared with prior art, the beneficial effects of the utility model are：
1st, the utility model sets the centronucleus central member of a specific shape according to temperature gradient, resets raw material in crucible
Interior distributing position improves the raw material distillation steam uniformity for reaching each position, reduces the protrusion rate of germ nucleus, reduce
The stress of crystal reduces the defects of stress generates, so as to which grain boundary be made to tend to plane, the thickness of diameter needed for increase.
2nd, the utility model resets the utilization rate that feed location setting improves raw material, reduces raw material usage amount,
Do not change under temperature gradient distribution, which can cause raw material to make full use of, not only so that the distillation of each position
Vapor volume it is uniform, and but so that each position raw material fully distils, section eliminates the raw material of the position that cannot distil originally, growth
The crystal of same thickness only needs the 50-70% of original raw material.
3rd, the utility model centronucleus central member and center filter baffle are all using porous high-purity graphite, and carry out Nb, Ta plating
Layer, effectively filtered out carbon particle and impurity, avoid impurity particle reach seed crystal, reduce impurity particle caused by carbon wrappage and
Other crystal growth defects control the speed of growth of early growth period.
Description of the drawings
Fig. 1 is the overall structure diagram of the utility model.
In figure：1st, crucible, 2, crucible cover, 3, graphite soft felt insulating layer, 4, induction coil, 5, seed wafer, 6, mounting groove, 7,
Centronucleus central member, 8, center filter baffle, 9, prostheses baffle ring, 10, quartz tube, 11, silicon carbide powder.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
Referring to Fig. 1, the utility model provides a kind of technical solution：A kind of silicon carbide monocrystal growth for growing high usage
Device, including crucible 1, crucible cover 2, graphite soft felt insulating layer 3, induction coil 4, the crucible cover 2 is located at described in top seal
Crucible 1, the 2 medial center outburst area of crucible cover are bonded with seed wafer 5, and the graphite soft felt insulating layer 3 coats the earthenware
Around crucible, top, bottom, the graphite soft felt insulating layer 4 is equipped with 1-4 layer, is 5-10mm per layer thickness, graphite felt guarantor
A quartz tube 10 is arranged between warm layer 3 and induction coil 4,1-2 layers are added more at the switching of 1 top of crucible and lower part
Graphite soft felt insulating layer 3, the induction coil 4 are set around graphite soft felt insulating layer 3, and bottom centre opens up in the crucible 1
There is mounting groove 6, a centronucleus central member 7 is placed on the mounting groove 6, the centronucleus central member 7 is narrow wide under being and has Nb, Ta plating
The porous graphite bucket of layer, the interior gap between 1 madial wall of both sides and crucible of the centronucleus central member 7 are placed with purity as 5-6N
Silicon carbide powder 11, the center filter baffle 8 being adapted is equipped in the centronucleus central member 7, the center filter baffle 8 is
There is the porous graphite baffle of Nb, Ta coating, the prostheses baffle ring 9 is the high-density graphite baffle ring for having Nb, Ta coating, described
Prostheses baffle ring 9 is provided between 1 madial wall of 7 top of centronucleus central member and crucible.
Operation principle：It is evacuated down to pressure 5x10 first-2Mbar is hereinafter, be filled with argon gas control pressure in 1-50mbar rings
Under border, 4 energization sensing heating graphite crucible 1 of water-cooled induction coil, when heating temperature reaches 2100 DEG C or more, carborundum powder
End 11 starts distillation and becomes silicon carbide gas by center graphite bucket 7 and the center filter baffle 8 of porous graphite, and along temperature
Gradient is transferred to depositing crystalline at the seed crystal of lower temperature region from high-temperature region, by the depositing crystalline time of 5-10 days, completes
Silicon carbide monocrystal growth.
The utility model sets the centronucleus central member of a specific shape according to temperature gradient, resets raw material in crucible
Distributing position, improve the raw material distillation steam uniformity for reaching each position, reduce the protrusion rate of germ nucleus, reduce crystalline substance
The stress of body reduces the defects of stress generates, so as to which grain boundary be made to tend to plane, the thickness of diameter needed for increase.It improves
The utilization rate of raw material reduces raw material usage amount, and in the case where not changing temperature gradient distribution, which can cause raw material
It makes full use of, not only so that the vapor volume of each position distillation is uniform, and but so that each position raw material fully distils, saving is fallen
Originally the raw material for the position that cannot distil, to grow the crystal of same thickness only need the 50-70% of original raw material.Centronucleus central member and
Center filter baffle has effectively filtered out carbon particle and impurity, has avoided all using porous high-purity graphite, and carry out Nb, Ta coating
Impurity particle reaches seed crystal, and carbon wrappage and other crystal growth defects caused by reducing impurity particle control early growth period
The speed of growth.
Embodiment one
Center graphite bucket 7 is packed into, and be packed into 0.8kg purity 5N-6N silicon carbide powders 11 in crucible 1, be packed into 4 cun partially
The crucible cover 2 of 4 ° of 4H seed crystals, after be evacuated down to pressure 5x10-2Mbar hereinafter, the initial stage speed of exhaust be 50mbar/min, fill
Enter argon gas control pressure and growth is begun to warm up under 1-30mbar environment, continuously grown in 2100 DEG C of -2300 DEG C of hot environments
After 5-10 days, the difference in height of crystal protrusion is grown in 0-6mm, no polycrystalline carries out slice manufacture substrate, chip is seen under polariscope
Carbon-free wrappage, MPD<1, total dislocation density<3000/cm2
In the description of the present invention, it is to be appreciated that term " coaxial ", " bottom ", " one end ", " top ", " in
Portion ", " other end ", " on ", " side ", " top ", " interior ", " forepart ", " center ", the orientation of the instructions such as " both ends " or position close
Be for based on orientation shown in the drawings or position relationship, be for only for ease of description the utility model and simplify description rather than
Indicate or imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore cannot
It is construed as a limitation of the present invention.
In the utility model unless specifically defined or limited otherwise, term " installation ", " setting ", " connection ", " Gu
It is fixed ", the terms such as " being screwed on " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；
Can be mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary, it can be with
It is the interaction relationship of connection inside two elements or two elements, unless otherwise restricted clearly, for this field
For those of ordinary skill, concrete meaning of the above-mentioned term in the utility model can be understood as the case may be.
While there has been shown and described that the embodiment of the utility model, for the ordinary skill in the art,
It is appreciated that can these embodiments be carried out with a variety of variations in the case of the principle and spirit for not departing from the utility model, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of silicon carbide monocrystal growth device for growing high usage, including crucible (1), crucible cover (2), graphite soft felt heat preservation
Layer (3), induction coil (4), the crucible cover (2) is positioned at crucible described in top seal (1), crucible cover (2) medial center
Outburst area is bonded with seed wafer (5), the graphite soft felt insulating layer (3) is coated around the crucible, top, bottom, institute
Induction coil (4) is stated to set around graphite soft felt insulating layer (3), it is characterised in that：The interior bottom centre of the crucible (1) offers
Mounting groove (6) places a centronucleus central member (7) on the mounting groove (6), is equipped with what is be adapted in the centronucleus central member (7)
Center filter baffle (8) is provided with prostheses baffle ring between centronucleus central member (7) top and crucible (1) madial wall
(9)。
2. a kind of silicon carbide monocrystal growth device for growing high usage according to claim 1, it is characterised in that：It is described
Graphite soft felt insulating layer (3) is 5-10mm equipped with 1-4 layers, per layer thickness, increases at the switching of crucible (1) top and lower part more
If 1-2 layers of graphite soft felt insulating layer (3).
3. a kind of silicon carbide monocrystal growth device for growing high usage according to claim 1, it is characterised in that：It is described
A quartz tube (10) is arranged between graphite felt insulating layer (3) and induction coil (4).
4. a kind of silicon carbide monocrystal growth device for growing high usage according to claim 1, it is characterised in that：It is described
Centronucleus central member (7) porous graphite bucket that is narrow wide and having Nb, Ta coating under being, in the centronucleus central member (7) and both sides and
Gap between crucible (1) madial wall is placed with the silicon carbide powder (11) that purity is 5-6N.
5. a kind of silicon carbide monocrystal growth device for growing high usage according to claim 1, it is characterised in that：It is described
Center filter baffle (8) is the porous graphite baffle for having Nb, Ta coating, and the prostheses baffle ring (9) is to have Nb, Ta coating
High-density graphite baffle ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201721445455.XU CN207498512U (en) | 2017-11-02 | 2017-11-02 | A kind of silicon carbide monocrystal growth device for growing high usage |
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| CN201721445455.XU CN207498512U (en) | 2017-11-02 | 2017-11-02 | A kind of silicon carbide monocrystal growth device for growing high usage |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234797A (en) * | 2018-11-02 | 2019-01-18 | 山东天岳先进材料科技有限公司 | A kind of silicon carbide monocrystal growth device |
| CN110055587A (en) * | 2019-04-28 | 2019-07-26 | 河北同光晶体有限公司 | A kind of high purity graphite crucible and high quality single-crystal silicon carbide preparation method |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| CN111809231A (en) * | 2020-06-02 | 2020-10-23 | 中电科工程建设有限公司 | Crucible beneficial to growth of silicon carbide crystals |
| CN112831840A (en) * | 2020-12-30 | 2021-05-25 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN112939605A (en) * | 2021-02-03 | 2021-06-11 | 潍坊工商职业学院 | Method for improving growth rate of silicon carbide ceramic |
| CN113136623A (en) * | 2021-04-26 | 2021-07-20 | 山西烁科晶体有限公司 | Method for reducing defect density of carbon inclusion in silicon carbide single crystal |
| CN113622016A (en) * | 2021-08-17 | 2021-11-09 | 福建北电新材料科技有限公司 | Silicon carbide crystal growth apparatus and crystal growth method |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
| CN115110150A (en) * | 2022-05-20 | 2022-09-27 | 浙江富芯微电子科技有限公司 | Silicon carbide growth device and crucible heat insulation structure thereof |
| CN117166058A (en) * | 2023-09-27 | 2023-12-05 | 通威微电子有限公司 | Silicon carbide crystal growth device |
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2017
- 2017-11-02 CN CN201721445455.XU patent/CN207498512U/en active Active
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234797A (en) * | 2018-11-02 | 2019-01-18 | 山东天岳先进材料科技有限公司 | A kind of silicon carbide monocrystal growth device |
| CN110055587A (en) * | 2019-04-28 | 2019-07-26 | 河北同光晶体有限公司 | A kind of high purity graphite crucible and high quality single-crystal silicon carbide preparation method |
| CN110055587B (en) * | 2019-04-28 | 2021-02-26 | 河北同光晶体有限公司 | High-purity graphite crucible and preparation method of high-quality silicon carbide single crystal |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| US11499246B2 (en) | 2020-03-30 | 2022-11-15 | Hunan Sanan Semiconductor Co., Ltd. | Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same |
| CN111809231A (en) * | 2020-06-02 | 2020-10-23 | 中电科工程建设有限公司 | Crucible beneficial to growth of silicon carbide crystals |
| CN112831840B (en) * | 2020-12-30 | 2022-05-10 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN112831840A (en) * | 2020-12-30 | 2021-05-25 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN112939605B (en) * | 2021-02-03 | 2022-06-07 | 潍坊工商职业学院 | Method for improving growth rate of silicon carbide ceramic |
| CN112939605A (en) * | 2021-02-03 | 2021-06-11 | 潍坊工商职业学院 | Method for improving growth rate of silicon carbide ceramic |
| CN113136623A (en) * | 2021-04-26 | 2021-07-20 | 山西烁科晶体有限公司 | Method for reducing defect density of carbon inclusion in silicon carbide single crystal |
| CN113622016A (en) * | 2021-08-17 | 2021-11-09 | 福建北电新材料科技有限公司 | Silicon carbide crystal growth apparatus and crystal growth method |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| CN114525587B (en) * | 2022-04-22 | 2022-07-19 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
| CN115110150A (en) * | 2022-05-20 | 2022-09-27 | 浙江富芯微电子科技有限公司 | Silicon carbide growth device and crucible heat insulation structure thereof |
| CN117166058A (en) * | 2023-09-27 | 2023-12-05 | 通威微电子有限公司 | Silicon carbide crystal growth device |
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