CN108130593A - A kind of crystal growing furnace attemperator - Google Patents
A kind of crystal growing furnace attemperator Download PDFInfo
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- CN108130593A CN108130593A CN201711386301.2A CN201711386301A CN108130593A CN 108130593 A CN108130593 A CN 108130593A CN 201711386301 A CN201711386301 A CN 201711386301A CN 108130593 A CN108130593 A CN 108130593A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- Crystallography & Structural Chemistry (AREA)
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- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of crystal growing furnace attemperators, the attemperator includes winding and is coated on the first graphite carbon felt of at least one layer positioned inside outside crystal growing furnace and the black carbon felt of at least one layer positioned at outside second, and at least one layer of graphite paper between folder first graphite felt and the second graphite felt, along the y direction of the crystal growing furnace, the height of second graphite felt covers the height of entire crystal, the height of at least one layer graphite paper is extended to below the head cover of crystal growing furnace at the top of second graphite carbon felt at 10~20 mm, the height of first graphite carbon felt is more than or equal to the height of at least one layer of graphite paper, and less than or equal to the height of second graphite felt.
Description
Technical field
The present invention relates to a kind of crystal growing furnace attemperators, and in particular to one kind is grown based on physical vapor transport
The recyclable heat preservation carbon felt of carborundum crystals, belongs to heat preservation carbon felt Material Field.
Background technology
Silicon carbide (SiC) monocrystalline is with energy gap is big, thermal conductivity is high, electronics saturation drift velocity is big, critical breakdown potential
Field is high, dielectric constant is low, good chemical stability, in high frequency, high-power, high temperature resistant, Flouride-resistani acid phesphatase semiconductor devices and purple
External detector and short-wave LED etc. are with a wide range of applications.
At present, the technology of preparing of high quality SiC single crystal reaches its maturity, but its cost is excessively high still restricts the wide of SiC crystal
General application, therefore, various countries scientific research personnel all prepare component such as graphite crucible by preparing larger sized SiC crystal and saving it
Protective film coating these two aspects strives for the reduction of SiC crystal cost.Researcher both knows about in industry, in carborundum crystals
High-purity thermal insulation material is also very expensive in growth, such as the graphite soft carbon felt of western Cree Inc., but it is as graphite material,
It is easily broken when more than 2000 celsius temperature with reacting from the growth components of seed crystal lid surrounding spilling graphite crucible
It is bad.This not only influences heat insulation effect during crystal growth, but also the uniformity for influencing growth interface temperature field leads to the crystalline substance of growth
Body stress is uneven and makes crystal cleavage.And silicon carbide (SiC) monocrystal has excellent performance and can be widely applied to prepare high temperature, high frequency
And high-power electronic device, however physical vapor transport (PVT) method preparation low defect SiC monocrystal cost is still very high at present,
This seriously constrains the popularization and application of the material, and various countries scientific research personnel all ongoing efforts reduce the manufacturing cost of SiC monocrystal, than
Such as prepare larger size crystal, using graphite thermal-insulation hard felt so as to fulfill be used for multiple times and graphite crucible plating ramet (TaC)
Layer realizes reuse etc. technology.Generally speaking, the application cost of silicon carbide single crystal is excessively high at present, and single-crystal silicon carbide is use up
Pipe has excellent performance and prepares comparative maturity, but its is expensive, is also difficult to be widely used in general domain at present.Domestic patent
(CN204849112U and CN204210104U) although all disclosing a kind of vacuum high temperature furnace graphite felt, key is by viscous
Knot agent adds in graphite paper in carbon felt, and the addition of binding agent will directly affect the purity for keeping the temperature graphite felt, and it is mono- can not to meet SiC
The high-purity requirement of crystals growth, the especially high-purity alpha-SiC crystal growth of SiC single crystal growth at present must use high-purity heat preservation of import soft
Carbon felt can just meet free from admixture pollution requirement.In addition, all by graphite paper in patent (CN204849112U and CN204210104U)
Add in entire carbon felt, realize the synchronous of radial and axial temperature gradient and reduce, but in SiC single crystal growth axial temperature ladder and
Radially temperature ladder with crystal growth thickness increase variation be it is different, especially axial-temperature gradient with growth time extend need by
Edge up height, and therefore, addition graphite paper can not regulate and control the temperature field of crystal growth in entire graphite felt, be unfavorable for silicon carbide whisker
Body is grown.SiC single crystal is grown in be carried out more than under the conditions of 2000 celsius temperatures, even if the stone described in using above-mentioned two patent
Black felt can only delay but growth components can not be prevented to react with graphite felt and the phenomenon that boundary is destroyed occur, and this
By the temperature field of the lower heat SiC crystal growth of extreme influence, it also will be unable to save the manufacturing cost of SiC crystal.
Invention content
In view of the above-mentioned problems, the present invention provides a kind of replaceable attemperator of crystal growing furnace, the heat preservation
Device include winding be coated on outside crystal growth heat-preservation cylinder positioned at the first graphite carbon felt of at least one layer of inside and positioned at outside
The second graphite carbon felt of at least one layer and folder first graphite felt and the second graphite felt between at least one layer of graphite paper,
Along the y direction of the crystal growing furnace, the height of the entire crystal of height covering of second graphite felt, described at least one
The height of layer graphite paper is extended at the top of second graphite carbon felt below the head cover of crystal growing furnace at 10~20mm, institute
The height for stating the first graphite carbon felt is more than or equal to the height of at least one layer of graphite paper, and less than or equal to second graphite felt
Height.
In the present invention, the crystal growing furnace attemperator (heat preservation carbon felt) by Multi-layer graphite carbon felt winding form and
Graphite paper is sandwiched between adjacent two layers graphite carbon felt.Being located at the graphite carbon felt on the outside of graphite paper as a result, will not be overflow by from seed crystal lid
The graphite carbon felt on the inside of graphite paper and graphite paper is only replaced in the influence of the growth components gone out in practical applications.And
The height of graphite paper is extended to below the head cover of crystal growing furnace at the top of the Multi-layer graphite carbon felt at 10~20mm.Thus
Realize the uniformity consistency of radial symmetry gradient at crystal growth interface.The present invention is protected by flexible graphite paper outside graphite crucible
Heat preservation carbon felt so that the heat preservation carbon felt, which can not only protect heat preservation graphite soft felt to realize that it is used multiple times, reduces cost, simultaneously
Also ensure the uniformity consistency of long interface temperature field (radial temperature field), realize low defect, high quality SiC crystal it is low into
Originally, prepared by high finished product rate, that is, effectively avoids introducing impurity and taking into account realizing the adjusting of thermal field and the requirement that cost is greatly reduced.
Preferably, the purity of the graphite paper is higher than 99.9%, thickness is 0.2~4mm, preferably 1~2mm.
Preferably, the number of plies of first graphite carbon felt is one or two layers, the number of plies of second graphite carbon felt is two
Layer or more.I.e., along the radial direction of crystal growing furnace, the graphite paper sandwiches position as the in heat preservation carbon felt from inside to outside the 1st
Layer or more outside graphite carbon felt, be optimized for internal layer from inside to outside in heat preservation carbon felt the 1st layer of graphite carbon felt be outer or the 2nd layer of graphite carbon felt
Outside.
Preferably, the first graphite carbon felt and/or the second graphite carbon felt include graphite soft carbon felt and/or graphite hard carbon felt.
Preferably, the thickness of first graphite carbon felt of individual layer and/or the second graphite carbon felt of individual layer is 5~20mm.
On the other hand, the present invention also provides a kind of crystal growing furnaces, which is characterized in that including heat coil, heater,
And it is arranged on the attemperator as described above between the heat coil and heater.That is, be crystal growing furnace include it is upper
Attemperator, the heater being set to inside the attemperator and the heat coil around the attemperator.In the present invention,
The attemperator is not limited to be applied to SiC crystal growth, applies also for physical vapor transport (PVT) method and grows other crystalline substances
Body can effectively avoid to introduce impurity and take into account and realize the adjusting of thermal field and the requirement that cost is greatly reduced.
Preferably, first graphite carbon felt and the second graphite carbon felt overall thickness are less than the inner radius R of heat coil1With
Heater radius R2Difference subtract the numerical value of 5mm again.
By the recyclable heat preservation carbon felt for preparing of the present invention for crystal growth, high-purity flexible graphite paper and
It is replaced after each crystal growth in graphite paper internal layer and the heat preservation soft carbon felt of graphite paper same widths, so as to protect
The heat preservation soft carbon felt do not replaced is protected, significantly improves the access times of heat preservation soft carbon felt at least at 10 times or more, while ensure crystal
The uniformity consistency in temperature field during growth reduces crystal defect, improves the stability and repeatability of crystal growth, height is greatly reduced
The manufacturing cost of quality silicon carbide silicon single crystal body.
Description of the drawings
Fig. 1 is growth room's structure diagram that physical vapor transport (PVT) method grows SiC monocrystal；
Fig. 2 is used in PVT methods grow SiC monocrystal for embodiment 1 and is sandwiched flexibility outside heat preservation soft carbon felt from inside to outside the 1st layer
The method of graphite paper grows the destroyed situation of outer layer heat preservation soft carbon felt after 10 heats；
Fig. 3 is used in PVT methods grow SiC monocrystal for embodiment 2 and is sandwiched flexibility outside heat preservation soft carbon felt from inside to outside the 2nd layer
The method of graphite paper grows the destroyed situation of outer layer heat preservation soft carbon felt after 15 heats；
Fig. 4 is that comparative example 1 does not use the side that flexible graphite paper is sandwiched in soft carbon felt is kept the temperature in PVT methods grow SiC monocrystal
Method grows the destroyed situation of outer layer heat preservation soft carbon felt after 2 heats.
Specific embodiment
It is further illustrated the present invention below by way of following embodiments and attached drawing, it should be appreciated that following embodiments are only used for
Illustrate the present invention, be not intended to limit the present invention.
In the present invention, the structure of recyclable heat preservation carbon felt (crystal growing furnace attemperator) is as shown in Figure 1, institute
Heat preservation carbon felt 2 is stated to be formed by Multi-layer graphite carbon felt winding and sandwich graphite paper 3 between at least one adjacent two layers graphite carbon felt.
In other words, Multi-layer graphite carbon felt 2 includes interchangeable first graphite carbon felt 4 positioned inside and the second graphitic carbon positioned at outside
Felt 5.First graphite carbon felt and the second graphite carbon felt can be multilayered structure, it is preferable that the number of plies of the first graphite carbon felt is one layer
Or two layers, the number of plies of the first graphite carbon felt is more than two layers.Flexible graphite paper is positioned in graphite soft carbon felt interlayer in the present invention,
Its placement location is outside internal layer the 1st layer of graphite carbon felt from inside to outside and above, and optimization is positioned over internal layer from inside to outside
The 1st layer of graphite carbon felt be outer or the 2nd layer of graphite carbon felt outside.The graphite carbon felt can be graphite soft carbon felt or/and graphite hard carbon felt.
Along the y direction of the crystal growing furnace, the height of the second graphite felt covers the height of entire crystal, to provide uniform guarantor
Temp effect provides uniform thermal field.Also, growth components and the graphite material of periphery in view of being overflowed at crucible cover (seed crystal lid)
It can react rapidly and react width within 10mm, therefore in the present invention in graphite soft carbon felt (or graphite hard carbon felt) interlayer
Graphite paper width must be more than or equal to graphite soft carbon felt (or graphite hard carbon felt) at the top of arrive seed crystal lid lower part 10mm distance, but
No more than the height of entire graphite soft carbon felt (or graphite hard carbon felt), the width of graphite paper is preferably graphite soft carbon felt (or graphite
Hard carbon felt) top arrives the distance of seed crystal lid 10~20mm of lower part, i.e., and, the height of graphite paper is from the top of second graphite carbon felt
It extends to below the head cover of crystal growing furnace at 10~20mm.The height of first graphite carbon felt is more than or equal at least one layer of stone
The height of black paper, and less than or equal to the height of second graphite felt.The preferably equal to height of graphite paper, with cost-effective.
In the present invention, the number of plies of first graphite carbon felt is one or two layers, and the number of plies of second graphite carbon felt is
More than two layers.First graphite carbon felt and/or the second graphite carbon felt include graphite soft carbon felt and/or graphite hard carbon felt.It is described
The thickness of first graphite carbon felt and/or the second graphite carbon felt can be 5~20mm.The attemperator is placed in heat coil and fever
When between body, the overall thickness of graphite carbon felt is less than heat coil inner radius R1With attemperator internal heat generation body radius R2Difference
Value subtracts the value of 5mm.The purity of the graphite paper (flexible graphite paper) is higher than 99.9%, and thickness range is in 0.2~4mm, preferably 1
~2mm.
Above-mentioned recyclable heat preservation carbon felt winding be arranged on crystal growing apparatus internal heat generation body (i.e. crucible etc., such as
In Fig. 1 " 1 ") periphery, more peripheral is for the heat coil (heating coil) that heats the heater.In SiC crystal growth
Heater is graphite crucible, and the crucible includes crucible cover and crucible body.Attemperator of the present invention is not limited to be applied to
SiC crystal is grown, and is applied also for physical vapor transport (PVT) method and is grown other crystal.Heat preservation carbon felt of the present invention is not only
Protection graphite soft carbon felt is limited only to, if graphite crucible heat insulating material for external is also using graphite hard carbon felt, the party in growth structure
Method is equally applicable.
Illustrate to following exemplary above-mentioned heat preservation carbon felt (attemperator) growing carbon for being based on physical vapor transport
The method of SiClx monocrystal.
Sic raw material is placed in 1 bottom high-temperature region of graphite crucible (graphite crucible body), seed crystal is placed on graphite crucible 1
Portion's low-temperature space (graphite crucible lid), 1 outer layer of graphite crucible are realized using the package of graphite carbon felt (for example, graphite soft carbon felt etc.) 2 and protected
Temperature and sandwich a high-purity flexible graphite paper 3 in 2 internal layer of graphite carbon felt.Then using physical vapor transport method in growth pressure
For 2~30Torr, growth temperature be 1900~2300 DEG C under conditions of in seed crystal face deposition growing silicon carbide single crystal.In carbon
After SiClx crystal growth, the graphite paper and the graphite carbon felt wrapped up by graphite paper are replaced.That is, crystal life every time
After length, carried out to above-mentioned flexible graphite paper 3 and in 3 internal layer of graphite paper and the heat preservation soft carbon felt 4 of 3 same widths of graphite paper
Renew, so as to protect the heat preservation carbon felt do not replaced.This significantly improves the access times of heat preservation soft carbon felt at least at 10 times or more, together
When ensure crystal growing process in radial direction thermal field uniformity consistency, be further reduced internal stress and microcosmic crystal defect, improve
The manufacturing cost of high quality silicon carbide single crystal is greatly reduced in the stability and repeatability of crystal growth.The physical vapor passes
The parameter of transmission method further includes：Growth time is 50 hours or more.The growth atmosphere can be argon gas, nitrogen, helium and hydrogen
At least one of.
Embodiment is enumerated further below so that the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, it is impossible to be interpreted as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright the above is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary concrete numerical value.If without specified otherwise, stone described in following embodiments
The purity of black paper is higher than 99.9%, and thickness is 0.2~4mm, preferably 1~2mm.The graphite carbon felt is the western Cree Inc.'s life of Germany
The SIGRATHERM type graphite soft carbon felts of production, thickness 6mm, height is optional, cuts as 400mm.
Embodiment 1
The preparation of heat preservation carbon felt：The heat preservation carbon felt includes 5 layers of graphite soft carbon felt, the 1st layer of graphite soft carbon that wherein internal layer starts
A height is sandwiched between felt and the 2nd layer of graphite soft carbon felt as 50mm, thickness is high-purity flexible graphite paper of 1mm, and by graphite
Paper bag is rolled between the 1st layer and the 2nd layer that internal layer in graphite soft carbon felt starts, and the height of the graphite soft carbon felt is 400mm, quilt
The graphite soft carbon felt of graphite paper package and the graphite soft carbon felt not wrapped up are in discrete state；
Sic raw material is placed in graphite crucible high-temperature region first, seed crystal is placed in graphite crucible low-temperature space, graphite crucible outer layer
It is wrapped up using graphite soft carbon felt and realizes heat preservation and keeping the temperature the 1st layer of graphite soft carbon felt and the 2nd layer of graphite that soft carbon felt internal layer starts
High-purity flexible graphite paper that a height is 50mm is sandwiched between soft carbon felt, and (height of the graphite paper is to be arrived at the top of graphite carbon felt
The distance of crucible cover lower part 15mm), it places into crystal growth furnace chamber, growth atmosphere is to adulterate a small amount of nitrogen in argon gas, in life
Long pressure is 12Torr, and growth temperature is 2100 DEG C, after growth time 120h, obtains the silicon carbide single crystal that thickness is 20mm.
After growth, it is the of 50mm to use at the top of the distance that new height is destroyed after replacing growth for the graphitic carbon felt rug of 50mm
With the graphite paper that stylish graphite paper was replaced using same modes of emplacement, it is brilliant to carry out next heat for 1 layer of heat preservation carbon felt
Body growth prepares.It so repeats to replace graphite paper after each crystal growth and the 1st layer of heat preservation carbon felt of same widths prepares
Next heat crystal growth, after such repeated growth 10 times, it can be found that the outer layer graphite soft carbon felt do not replaced is destroyed seldom
(as shown in Figure 2), it ensure that the stability in temperature field and repeatability during each crystal growth, not only increase high quality crystal
The yield rate of growth, and significantly reduce the cost of growing silicon carbice crystals.
Embodiment 2
The preparation of heat preservation carbon felt：The heat preservation carbon felt includes 7 layers of graphite soft carbon felt, the 2nd layer of graphite soft carbon that wherein internal layer starts
A height is sandwiched between felt and the 3rd layer of graphite soft carbon felt as 60mm, thickness is high-purity flexible graphite paper of 2mm, and by graphite
Paper bag is rolled between the 2nd layer and the 3rd layer that internal layer in graphite soft carbon felt starts, and the height of the graphite soft carbon felt is 400mm, quilt
The graphite soft carbon felt of graphite paper package and the graphite soft carbon felt not wrapped up are in discrete state；
Sic raw material is placed in graphite crucible high-temperature region first, seed crystal is placed in graphite crucible low-temperature space, graphite crucible outer layer
It is wrapped up using graphite soft carbon felt and realizes heat preservation and keeping the temperature the 2nd layer of graphite soft carbon felt and the 3rd layer of graphite that soft carbon felt internal layer starts
High-purity flexible graphite paper that a height is 60mm is sandwiched between soft carbon felt, and (height of the graphite paper is to be arrived at the top of graphite carbon felt
The distance of crucible cover lower part 20mm), it places into crystal growth furnace chamber, growth atmosphere is argon gas, is 9Torr in growth pressure,
Growth temperature is 2070 DEG C, after growth time 120h, obtains the Semi-insulating silicon carbide mono-crystal body that thickness is 20mm.Growth terminates
Afterwards, use 2 new width for 60mm graphite soft felt replace growth after be destroyed distance at the top of be 60mm from inside to outside
Layers 1 and 2 heat preservation soft carbon felt, while the new graphite paper of similary width was replaced using similary modes of emplacement
Graphite paper carries out next heat crystal growth.So repeat to replace graphite paper and same widths after each crystal growth
Layers 1 and 2 heat preservation soft carbon felt prepares next heat crystal growth, after such repeated growth 15 times, it can be found that not replacing
Graphite soft carbon felt be destroyed seldom (as shown in Figure 3), this significantly improves the yield rate of high quality growing silicon carbice crystals, and
Significantly reduce the manufacturing cost of carborundum crystals.
Comparative example 1
In order to carry out Experimental comparison, sic raw material is equally placed in graphite crucible high-temperature region, it is low that seed crystal is placed in graphite crucible
Warm area, graphite crucible outer layer realize heat preservation, but not using graphite paper protection heat preservation soft carbon felt only with 7 layers of graphite soft carbon felt package
Method, be put into crystal growth furnace chamber, growth atmosphere is argon gas, growth pressure be 9Torr, growth temperature be 2070 DEG C,
After growth time 120h, the silicon carbide single crystal that thickness is 22mm is obtained.After such repeated growth 2 times, it can be found that not replacing
Graphite soft carbon felt three layers of growth components for being spilled off crucible from inside to outside greatly destroy (as shown in Figure 4), this notable shadow
The uniformity and consistency in temperature field when having rung crystal growth, this heat preservation soft carbon felt can not continue the crystal life of high quality
It is long, it is therefore desirable to replace entire heat preservation soft carbon felt, this greatly improves the cost of growing silicon carbice crystals, and not be suitable for production
Industry prepares carborundum crystals.
It is noted that only the present invention is described in detail for above-mentioned specific embodiment, it should not be to the present invention
Limitation.It for a person skilled in the art, can be there are many form when without departing from the objective and range of claim
Protection thermal-insulation hard felt and other graphite thermal insulation materials are equally applicable to the variation of details, such as flexible graphite paper.
Claims (7)
1. a kind of crystal growing furnace attemperator, which is characterized in that the attemperator includes winding and is coated on crystal growth
Described in the first graphite carbon felt of at least one layer positioned inside outside stove and the black carbon felt of at least one layer positioned at outside second and folder
At least one layer of graphite paper between first graphite felt and the second graphite felt, along the y direction of the crystal growing furnace, described
The height of two graphite felts covers the height of entire crystal, and the height of at least one layer graphite paper is from second graphite carbon felt
Top is extended to below the head cover of crystal growing furnace at 10~20 mm, and the height of first graphite carbon felt is more than or equal to described
The height of at least one layer of graphite paper, and less than or equal to the height of second graphite felt.
2. crystal growing furnace attemperator according to claim 1, which is characterized in that the purity of the graphite paper is higher than
99.9%, thickness is 0.2~4 mm, preferably 1~2 mm.
3. crystal growing furnace attemperator according to claim 1 or 2, which is characterized in that first graphite carbon felt
The number of plies for one or two layers, the number of plies of second graphite carbon felt is more than two layers.
4. crystal growing furnace attemperator according to any one of claim 1-3, which is characterized in that first stone
Black carbon felt and/or the second graphite carbon felt include graphite soft carbon felt and/or graphite hard carbon felt.
5. the crystal growing furnace attemperator according to any one of claim 1-4, which is characterized in that the individual layer
The thickness of the second graphite carbon felt of one graphite carbon felt and/or individual layer is 5~20 mm.
6. a kind of crystal growing furnace, which is characterized in that including heat coil, heater and be arranged on the heat coil and
The attemperator as described in any one of claim 1-5 between heater.
7. crystal growing furnace according to claim 6, which is characterized in that first graphite carbon felt and the second graphite carbon felt
Overall thickness is less than the numerical value that the inner radius of heat coil subtracts 5 mm with the difference of heater radius again.
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Cited By (7)
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| CN109269877A (en) * | 2018-11-02 | 2019-01-25 | 航天特种材料及工艺技术研究所 | A kind of ultra-temperature mechanical performance test high temperature furnace and its heating means |
| CN109355697A (en) * | 2018-11-27 | 2019-02-19 | 沈阳航发精密铸造有限公司 | A kind of crystallographic orientation furnace temperature thermal baffle |
| EP3699328A1 (en) * | 2019-02-20 | 2020-08-26 | SiCrystal GmbH | Manufacturing method for sic-volume single crystal and growth assembly for same |
| CN112695486A (en) * | 2020-12-22 | 2021-04-23 | 宁晋晶兴电子材料有限公司 | Preparation method of high-purity graphite felt and crystal silicon furnace |
| CN113233450A (en) * | 2021-05-24 | 2021-08-10 | 山西贝特瑞新能源科技有限公司 | Lithium battery negative electrode material inside-string graphitization furnace |
| CN114959885A (en) * | 2022-05-27 | 2022-08-30 | 眉山博雅新材料股份有限公司 | Heat preservation device |
| CN116892056A (en) * | 2023-08-07 | 2023-10-17 | 江苏超芯星半导体有限公司 | Thermal insulation structure for silicon carbide single crystal growth and manufacturing method and application thereof |
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