CN114645318A - Crucible device for improving material transmission efficiency and application thereof - Google Patents
Crucible device for improving material transmission efficiency and application thereof Download PDFInfo
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- CN114645318A CN114645318A CN202210257423.6A CN202210257423A CN114645318A CN 114645318 A CN114645318 A CN 114645318A CN 202210257423 A CN202210257423 A CN 202210257423A CN 114645318 A CN114645318 A CN 114645318A
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- 239000000463 material Substances 0.000 title claims abstract description 57
- 230000005540 biological transmission Effects 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 131
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 35
- 230000006698 induction Effects 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002070 germicidal effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a crucible device for improving the material transmission efficiency and application thereof, wherein the device consists of a crucible and a heating assembly, the crucible consists of a crucible body and a crucible cover, and a crucible cavity is formed between the crucible body and the crucible cover; the heating assembly is positioned in the cavity of the crucible and consists of a heating body and a supporting plate, the heating body is fixed on the supporting plate, and the supporting plate is contacted with the lower bottom surface of the crucible body to transmit heat to the heating body. The device can greatly improve the temperature of the center of the crucible device, and can heat the aluminum nitride polycrystal material in the central area of the crucible body without additional heating equipment, so that the aluminum nitride polycrystal material in the crucible device is heated more uniformly, the mass transfer efficiency is effectively improved, the utilization rate of the aluminum nitride polycrystal material is improved, and the growth of large-size aluminum nitride crystals is facilitated.
Description
Technical Field
The invention relates to the technical field of crucible bacterium and crystal preparation, in particular to a crucible device for improving material transmission efficiency and application thereof.
Background
Aluminum nitride crystal is a third-generation semiconductor material having excellent physicochemical properties, such as high melting point, high breakdown strength, excellent piezoelectric characteristics, high thermal conductivity, and excellent stability, and is considered to be one of the best materials for manufacturing high frequency/high voltage devices, High Electron Mobility Transistors (HEMTs), Deep ultraviolet devices (Deep-UV), surface acoustic wave devices (SAW), and ultraviolet germicidal devices (UVC). The physical vapor transport method has proved to be the most suitable method for preparing large-size aluminum nitride crystals, and the principle is that the aluminum nitride polycrystal material is placed in a crucible device and heated by using a medium-frequency induction heating mode, and the aluminum nitride polycrystal material is continuously sublimated at high temperature and finally reaches the aluminum nitride seed crystal at the low-temperature position to complete the growth process.
The intermediate frequency induction heating furnace is a crucible device which is used for cutting a high-density magnetic line in an induction coil through intermediate frequency current, generates a large vortex in the crucible device, generates joule heat to enable the temperature of the crucible device to rise, and transmits heat to the inside of the crucible device through various heat transmission modes, thereby heating aluminum nitride polycrystal materials and completing the growth process. However, because the induced current is distributed on the workpiece unevenly, the induced current is strong on the surface and weak in the inner part, and the induced current is close to zero in the center part, the temperature at the center of the crucible device is lower, so that the condition that the aluminum nitride polycrystalline material in the crucible device is heated unevenly exists, the utilization rate of the aluminum nitride polycrystalline material is lower, and the material transmission gas flow field in the crucible device is unevenly distributed; and the material transmission efficiency is not high in the growth process, which brings difficulty to manufacture large-size aluminum nitride crystals.
Disclosure of Invention
The crucible device can greatly improve the center temperature of the crucible device, effectively increase the heating area of the aluminum nitride polycrystal material, enable the aluminum nitride polycrystal material in the crucible device to be heated more uniformly, effectively improve the material transmission efficiency, improve the utilization rate of the aluminum nitride polycrystal material and be beneficial to the growth of large-size aluminum nitride crystals.
The invention is realized by the following technical scheme:
a crucible device for improving the material transmission efficiency comprises a crucible and a heating assembly, wherein the crucible comprises a crucible body and a crucible cover, and a crucible cavity is formed between the crucible body and the crucible cover;
the heating assembly is positioned in the cavity of the crucible and consists of a heating body and a supporting plate, the heating body is fixed on the supporting plate, and the supporting plate is contacted with the lower bottom surface of the crucible body to transmit heat to the heating body.
Further, the supporting plate and the heating body are detachable.
Furthermore, the crucible body is a hollow cylinder with a bottom, and the diameter of the supporting plate is equal to that of the inner surface of the bottom surface of the crucible body; the heating body is a vertical structure fixed on the upward bulge of the supporting plate.
Furthermore, the number of the heating bodies is 5-20, the heating bodies are composed of heating main bodies and downward heating main body protrusions, and the heating bodies are not in contact with each other.
Further, the heating body is cylindrical, conical or cuboid.
Further, the highest point of the vertical structure is positioned above 1/3 of the height of the crucible body and is not higher than the top edge of the crucible body.
Furthermore, the heating body is fixed with a supporting plate hole arranged on the supporting plate through a heating main body protrusion.
Furthermore, the edge of the crucible cover is provided with a circular crucible cover groove, the width of the crucible cover groove is equal to the thickness of the wall of the crucible body, and the crucible cover and the crucible body are meshed through a groove structure.
Furthermore, the crucible material is more than one of tungsten, tantalum or tantalum carbide.
In the invention, the crucible device for improving the material transmission efficiency is applied to the preparation of the aluminum nitride polycrystal material, and the aluminum nitride polycrystal material is heated by adopting a medium-frequency induction heating furnace.
According to the invention, the heating assembly is arranged in the crucible and has a split type inserting plate structure, in the crystal growth process, the heating assembly is placed in the crucible and is contacted with the lower surface of the cavity of the crucible body, when the crystal is heated at medium frequency, eddy current is generated in the heating assembly, and the temperature of the heating assembly is raised by the joule heat generated by the eddy current, so that the temperature of the center of the crucible device can be raised, the aluminum nitride polycrystal material in the crucible device is heated more uniformly, the utilization rate of the aluminum nitride polycrystal material is improved, and the material transmission gas flow field in the crucible device is more uniformly distributed; therefore, the material transmission efficiency is improved in the growth process, and the preparation of the aluminum nitride crystal material with larger size is facilitated; the split type plugboard structure is adopted, the structure is variable, the shape of the heating body on the heating assembly can be adjusted according to growth requirements, the collocation is flexible, the split type plugboard structure can be repeatedly used for many times, additional heating is not needed, and the reliability is high.
Advantageous effects
Compared with the prior art, the crucible device for improving the material transmission efficiency can greatly improve the temperature of the central area of the crucible body, and can heat the aluminum nitride polycrystal material in the central area of the crucible body without additional heating equipment, thereby effectively improving the material transmission efficiency, improving the utilization rate of the aluminum nitride polycrystal material and being beneficial to the growth of large-size aluminum nitride crystals.
Drawings
FIG. 1 is a schematic view showing the combination structure of a crucible apparatus I for improving the mass transfer efficiency in example 1;
FIG. 2 is a schematic view showing a disassembled structure of a crucible apparatus I for improving the mass transfer efficiency in example 1;
FIG. 3 is a view showing a heating block I of a crucible apparatus I for improving the mass transfer efficiency in example 1;
FIG. 4 is a schematic view of the heating elements of the crucible apparatus II for improving the mass transfer efficiency of example 2;
FIG. 5 is a structural view of a heating unit of a crucible apparatus II for improving the mass transfer efficiency in example 2;
FIG. 6 is a structure diagram of a heating assembly III of the crucible apparatus for improving the material transfer efficiency in embodiment 3;
wherein, 1 is the crucible, 2 is heating element, 11 is the crucible lid, and 110 is crucible lid recess, and 12 is the crucible body, and 120 is the crucible cavity, and 21 is the heating body, and 210 is heating main part arch, and 211 is heating main part, and 22 is the backup pad, and 220 is the backup pad hole.
Detailed Description
In order to make the technical means and the creative features of the invention achieve the purpose and the efficacy easy to understand, the invention is further described with reference to the specific embodiments and the drawings. It is to be understood that the embodiments described are only a few embodiments of the invention, and not all embodiments. For a more complete and clear description of the technical solutions in the examples of the present invention, the drawings used in the present embodiments will be briefly described below, and it is apparent that, based on the drawings in the present invention, those skilled in the art can obtain other drawings based on the drawings without creative efforts.
Example 1
Embodiment 1 a crucible apparatus i for improving a material transfer efficiency is shown in fig. 1 to 3, in which fig. 1 is a schematic view of an assembly structure of the crucible apparatus i for improving the material transfer efficiency, fig. 2 is a schematic view of a disassembly structure of the crucible apparatus i for improving the material transfer efficiency, and fig. 3 is a structural view of a heating assembly of the crucible apparatus i for improving the material transfer efficiency.
As shown in fig. 1 to 3, the crucible device i for improving the material transfer efficiency comprises a crucible 1 and a heating assembly 2, the crucible comprises a crucible body 12 and a crucible cover 11, the heating assembly 2 is located in a crucible cavity 120 formed by the crucible body 12 and the crucible cover 11, the heating assembly 2 comprises a heating body 21 and a supporting plate 22, the heating body 21 is fixed on the supporting plate 22, the supporting plate 22 is in contact with the lower bottom surface of the crucible body 12, the diameter of the supporting plate 22 is equal to the diameter of the inner surface of the bottom surface of the crucible body 12, so that heat is transferred to the heating body, an aluminum nitride polycrystal material is placed in the crucible cavity 120 to completely cover the heating assembly 2, and when the intermediate frequency heating device works, generating eddy currents in the crucible 1 and the heating assembly 2, wherein the eddy currents generate joule heat to increase the temperature of the crucible 1 and the heating assembly 2, so that the center and the edge of the aluminum nitride polycrystal material can be heated simultaneously;
the crucible body 12 is a hollow cylinder with a bottom, a ring-shaped crucible cover groove 110 is arranged at the edge of the crucible cover 11, the thickness of the crucible cover 11 is equal to the thickness of the wall of the crucible body 12, the width of the crucible cover groove 110 is equal to the thickness of the wall of the crucible body 12, the depth of the crucible cover groove 110 is smaller than the thickness of the crucible cover 11, and the crucible cover 11 and the crucible body 12 are occluded with each other through the groove;
the heating body 21 is an upright structure fixed on the support plate and is of an upward convex structure, the number of the heating body 21 is equal to that of the support plate holes 220 on the support plate 22, the heating body comprises a heating main body 211 and heating main body bulges 210 with downward bottoms, the heating main body 211 is a cylinder, the thickness of the heating main body bulges 210 is equal to that of the support plate 22, and the heating main body bulges 210 are matched with the support plate holes 220 on the support plate 22, so that the heating body 22 is fixed on the support plate 22; the diameter of the heating main body 211 is 2 times of the aperture of the support plate hole 220;
the highest point of the heating body 21 is located at 3/4 of the height of the crucible body 1, and the heating body 21 is uniformly dispersed on the supporting plate 22 and is not contacted with each other;
the supporting plate 22 and the heating body 21 are detachable, the crucible device is used for preparing aluminum nitride polycrystal materials, the number of the heating bodies 21 can be controlled according to crystal parameters required by target products, and the supporting plate 22 and the heating bodies 21 can be detached simultaneously to be used as a common crucible.
Example 2
Example 2 a crucible apparatus ii for improving the mass transfer efficiency is shown in fig. 4 and 5, wherein fig. 4 is a schematic view of a heating assembly ii of the crucible apparatus for improving the mass transfer efficiency, and fig. 5 is a structural view of the heating assembly ii of the crucible apparatus for improving the mass transfer efficiency;
the crucible device II for improving the material transfer efficiency in the embodiment 2 is composed of a crucible 1 and a heating assembly 2, the structure of the crucible 1 is the same as that of the embodiment 1, the heating assembly 2 is positioned in a crucible cavity 120 composed of a crucible body 12 and a crucible cover 11, the heating assembly 2 is composed of a heating body 21 and a supporting plate 22, the heating body 21 is fixed on the supporting plate 22, the supporting plate 22 is in contact with the lower bottom surface of the crucible body 12, the diameter of the supporting plate 22 is equal to that of the inner surface of the bottom surface of the crucible body 12, and heat is transferred to the heating body;
as shown in fig. 3 and 4, the support plate 22 has 13 support plate holes 220, which are circular through holes, the hole diameter of the support plate hole 220 is one eighth of the diameter of the support plate 22, the depth of the support plate hole 220 is equal to the thickness of the support plate 22, the heating body 21 is an upright structure fixed on the support plate and protruding upwards, the number of the upright structure is equal to the number of the support plate holes 220 on the support plate 22, the upright structure is composed of a heating main body 211 and heating main body protrusions 210 with downward bottom, the heating main body 211 is a cone, the thickness of the heating main body protrusions 210 is equal to the thickness of the support plate 22, and the heating main body protrusions 210 are matched with the support plate holes 220 on the support plate 22, so that the heating body 22 is fixed on the support plate 22; the diameter of the cone of the heating main body 211 is 2 times of the diameter of the support plate hole 2202;
the highest point of the heating body 21 is located at 1/2 of the height of the crucible body 1, and the heating body 21 is uniformly dispersed on the supporting plate 22 and is not contacted with each other;
the supporting plate 22 and the heating body 21 are detachable, the crucible device is used for preparing aluminum nitride polycrystal materials, the number of the heating bodies 21 can be controlled according to crystal parameters required by target products, and the supporting plate 22 and the heating bodies 21 can be detached simultaneously to be used as a common crucible.
Example 3
Embodiment 3 crucible apparatus iii for improving substance transfer efficiency is as described in fig. 6, fig. 6 is a crucible apparatus iii heating element structure diagram for improving substance transfer efficiency;
the crucible device III for improving the material transfer efficiency in embodiment 2 comprises a crucible 1 and a heating assembly 2, the structure of the crucible 1 is the same as that of embodiment 1, the heating assembly 2 is positioned in a crucible cavity 120 formed by a crucible body 12 and a crucible cover 11, the heating assembly 2 comprises a heating body 21 and a supporting plate 22, the heating body 21 is fixed on the supporting plate 22, the supporting plate 22 is in contact with the lower bottom surface of the crucible body 12, and the diameter of the supporting plate 22 is equal to that of the inner surface of the bottom surface of the crucible body 12, so that heat is transferred to the heating body;
as shown in fig. 6, the support plate 22 is provided with 13 support plate holes 220 which are square through holes, the diagonal line of each support plate hole 220 is one eighth of the diameter of the support plate 22, the depth of each support plate hole 220 is equal to the thickness of the support plate 22, the heating body 21 is an upright structure fixed on the support plate and protruding upwards, the number of the upright structure is equal to the number of the holes on the support plate 22, the upright structure consists of a heating main body 211 and heating main body protrusions 210 with downward bottoms, the heating main body 211 is a cuboid with a square bottom surface, the thickness of each heating main body protrusion 210 is equal to the thickness of the support plate 22, and the heating main body protrusions 210 are matched with the support plate holes 220 on the support plate 22, so that the heating body 22 is fixed on the support plate 22; the diagonal line of the square bottom surface of the cuboid of the heating main body 211 is 2 times of the diagonal line of the support plate hole 220;
the highest point of the heating body 21 is located at 3/8 of the height of the crucible body 1, and the heating body 21 is uniformly dispersed on the supporting plate 22 and is not contacted with each other;
the supporting plate 22 and the heating body 21 are detachable, the crucible device is used for preparing aluminum nitride polycrystal materials, the number of the heating bodies 21 can be controlled according to crystal parameters required by target products, and the supporting plate 22 and the heating bodies 21 can be detached simultaneously to be used as a common crucible.
Applications of the invention
In embodiments 1 to 3, when the crucible apparatus for improving the material transfer efficiency is used, the heating element and the aluminum nitride polycrystalline material are placed in the crucible cavity formed by the crucible body and the crucible cover, and the specific use method is as follows: cleaning the crucible device, bonding seed crystals after cleaning, adding an aluminum nitride polycrystal material (the height of the aluminum nitride polycrystal material is greater than or equal to 3/4 of a heating body and less than or equal to the height of the heating body), putting the crucible device into a special intermediate-frequency heating device, and performing surrounding heat insulation on the crucible device by using a heat insulating material, wherein the heating time is 5-10 hours, the heating is performed to 2100-2300 ℃, the heat is preserved for 5-70 hours as required, and then the temperature is reduced for 10-20 hours.
Claims (10)
1. A crucible device for improving the material transmission efficiency is characterized by comprising a crucible and a heating assembly, wherein the crucible comprises a crucible body and a crucible cover, and a crucible cavity is formed between the crucible body and the crucible cover;
the heating assembly is positioned in the cavity of the crucible and consists of a heating body and a supporting plate, the heating body is fixed on the supporting plate, and the supporting plate is contacted with the lower bottom surface of the crucible body to transmit heat to the heating body.
2. The crucible apparatus for improving the mass transfer efficiency as recited in claim 1, wherein the support plate and the heating body are detachable.
3. The crucible apparatus for improving the mass transfer efficiency of claim 1, wherein the crucible body is a hollow cylinder with a bottom, and the diameter of the support plate is equal to the diameter of the inner surface of the bottom surface of the crucible body; the heating body is a vertical structure fixed on the upward bulge of the supporting plate.
4. The crucible device for improving the material transfer efficiency as claimed in claim 3, wherein the number of the heating bodies is 5 to 20, the heating bodies are composed of a heating body and a downward heating body protrusion, and the heating bodies are not in contact with each other.
5. The crucible apparatus for improving the mass transfer efficiency of claim 3, wherein the heating body has a cylindrical, conical or rectangular shape.
6. The crucible apparatus of claim 3, wherein the highest point of the upstanding structure is located above 1/3, which is the height of the crucible body, and is no higher than the top edge of the crucible body.
7. The crucible apparatus for improving the mass transfer efficiency as claimed in claim 3, wherein the heating body is fixed to the support plate hole provided on the support plate by the heating body protrusion.
8. The crucible apparatus for improving the material transfer efficiency as claimed in claim 1, wherein the crucible cover edge is provided with a circular ring shaped crucible cover groove, the width of the crucible cover groove is equal to the thickness of the crucible body wall, and the crucible cover and the crucible body are engaged with each other through a groove structure.
9. The crucible apparatus of claim 1, wherein the crucible material is one or more of tungsten, tantalum or tantalum carbide.
10. Use of the crucible device for improving the mass transfer efficiency of any one of claims 1 to 9 in the preparation of an aluminum nitride polycrystal material, wherein the aluminum nitride polycrystal material is heated by a medium frequency induction heating furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210257423.6A CN114645318A (en) | 2022-03-16 | 2022-03-16 | Crucible device for improving material transmission efficiency and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210257423.6A CN114645318A (en) | 2022-03-16 | 2022-03-16 | Crucible device for improving material transmission efficiency and application thereof |
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| Publication Number | Publication Date |
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| CN114645318A true CN114645318A (en) | 2022-06-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210257423.6A Pending CN114645318A (en) | 2022-03-16 | 2022-03-16 | Crucible device for improving material transmission efficiency and application thereof |
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| CN (1) | CN114645318A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115595656A (en) * | 2022-10-14 | 2023-01-13 | 武汉大学（Cn） | Device for growing aluminum nitride crystal by sublimation method |
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| JP2007076928A (en) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Method and device for manufacturing single crystal |
| CN110408996A (en) * | 2018-04-26 | 2019-11-05 | 昭和电工株式会社 | Crucible and SiC single crystal grower |
| CN210974929U (en) * | 2019-09-12 | 2020-07-10 | 浙江博蓝特半导体科技股份有限公司 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
| CN212640658U (en) * | 2020-07-01 | 2021-03-02 | 广州南砂晶圆半导体技术有限公司 | Crucible for improving utilization rate of raw materials |
| CN214655361U (en) * | 2021-04-25 | 2021-11-09 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Adjustable crystal growth device |
| CN214830783U (en) * | 2021-03-30 | 2021-11-23 | 浙江大学杭州国际科创中心 | Crucible structure for growing silicon carbide single crystal |
-
2022
- 2022-03-16 CN CN202210257423.6A patent/CN114645318A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007076928A (en) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Method and device for manufacturing single crystal |
| CN110408996A (en) * | 2018-04-26 | 2019-11-05 | 昭和电工株式会社 | Crucible and SiC single crystal grower |
| CN210974929U (en) * | 2019-09-12 | 2020-07-10 | 浙江博蓝特半导体科技股份有限公司 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
| CN212640658U (en) * | 2020-07-01 | 2021-03-02 | 广州南砂晶圆半导体技术有限公司 | Crucible for improving utilization rate of raw materials |
| CN214830783U (en) * | 2021-03-30 | 2021-11-23 | 浙江大学杭州国际科创中心 | Crucible structure for growing silicon carbide single crystal |
| CN214655361U (en) * | 2021-04-25 | 2021-11-09 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Adjustable crystal growth device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115595656A (en) * | 2022-10-14 | 2023-01-13 | 武汉大学（Cn） | Device for growing aluminum nitride crystal by sublimation method |
| CN115595656B (en) * | 2022-10-14 | 2024-06-11 | 武汉大学 | Device for growing aluminum nitride crystal by sublimation method |
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Application publication date: 20220621 |