201230889 六、發明說明： 【相關申請案之交叉參考】 本發明主張韓國專利申請案，於2011年1月10曰申 請’案號10-201 1-0002466的優先權的益處，該案揭示 内容以引用方式全部併入本文。 【發明所屬之技術領域】 本發明提供一種電漿製程設備，且更具體而言，本發 明係關於一種能夠產生電感耦合電漿（ICp )及電容輕合 電漿（CCP)的電漿製程設備。 【先前技術】 電聚已在各種製程中被使用於製造—半導體及一顯示 裝置，舉例而言，在沉積、蝕刻、剝離、清洗、或類似 顯示裝置的 的製程中。正如通常用於製造一半導體及一 領域的一電流電漿源，存在著一電容輕合電漿（Cep ) 源及一電感耦合電漿（ICP)源。201230889 VI. Description of the invention: [Cross-Reference to Related Application] The present invention claims the benefit of the priority of the Korean Patent Application, filed on Jan. 10, 2011, the priority of the number of the patent No. 10-201 1-0002466, the disclosure of which is The citations are incorporated herein in their entirety. [Technical Field] The present invention provides a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of generating an inductively coupled plasma (ICp) and a capacitive light combined plasma (CCP) . [Prior Art] Electropolymerization has been used in various processes for manufacturing - semiconductors and a display device, for example, in processes of deposition, etching, stripping, cleaning, or the like. Just like a current plasma source commonly used in the fabrication of a semiconductor and a field, there is a capacitor light-coupled plasma (Cep) source and an inductively coupled plasma (ICP) source.
,4極具有氣體注入的一 入的一喷 一典型的 之間，且藉 場’從而產d 括一下部電才 或一基板所4 _ 淋頭。 201230889 一典型的ICP系統施加射頻（RF)電源至一線圈類型 的天線，且藉由通過天線的—電流引發一電場，從而產 生電漿。因此，使用ICP源的一設備通常經配置，使得 線圈類型的天線係安排於一電漿產生空間的外部，該電 桌產生空間具有諸如石英的—介電窗，以便在電漿產生 空間引發一電場。 與CCP源相比，ICP源具有在一低壓帶中有效率地產 生電㈣優點’且得到高密度的電敷。所以’有擴展使 用ICP源的領域的傾向。 在顯示裝置的製造領域中，按照消費者的需求及生產 效率’大尺寸的螢幕必須牽涉大尺寸的基板。為了處理 大尺寸的基板’需要大尺寸的介電窗，但考慮到介電窗 的機械硬度、介電窗的厚度料對電製具有的影響，通 常傾向以一格子狀的框安排複數個介電窗。 然而，格子狀的框顯示在縱向框及橫向框彼此交又的 -位置下’電漿密度變得較低的一現象。所以，存在電 聚的均勻性被降低的_問題。 【發明内容】 因此，本發明之描相4 1 冓心為解決以上的問題’且本發明白 一態樣係提供~雷將制 電水1程設備用於一大尺寸的基板，t 電漿製程設備可均勺从A Α恭從 J g地產生電漿。 在一態樣中，~~蕾妝… ， 電毁製程設備包括：一腔室，該腔| 201230889 包括一電漿製程空間及一開啟的頂部；一介電窗，該介 電由覆蓋該腔室的該頂部；一窗框，該窗框支樓該介電 窗，一天線’該天線被放置在該介電窗上，且引發電感 麵合電漿（ICP)在該電聚製程空間中產生；一電容輕合 電漿（CCP)框，該CCP框被安排在該天線的下方，且 引發CCP在該電漿製程空間中產生；及一承受器，該承 受器被安排在該電漿製程空間中，且在該承受器上安放 一基板作為待處理的一物件。 如上所述，根據本發明的一範例實施例的一電漿製程 設備實現電感耦合電漿（ICP)及電容耦合電漿（CCP) 兩者，而有助於初始電感耦合電漿的放電，防止歸因於 框的電漿減少，且改善製程速度。 ,如上所述，本發明的技術效果並非限於以上之效果， 且以上未提及的其他技術效果將由本領域中之技藝人士 從以下說明清楚地瞭解。 【實施方式】 此處以下，將參考隨附圖式而詳細說明本發明的範例 實施例。然而，本發明的範例實施例並非限於以下所揭 露的範例實施例，而可以各種形式實現。本發明的範例 實施例僅提供用於完成本發明的揭露，且使得本領域一 般技藝人士能夠完全瞭解本發明的範疇。在全部圖式 中，適合或類似的元件可被誇大以清楚的解釋，且類似 201230889 的元件符號代表類似的元件。 以下，根據本發明的範例實施例的—電聚製程設備將 參考隨附圖式而詳細說明。第1圖係根據本發明的一範 例實施例的-電聚製程設備的一概要側向截面視圖。 如第1圖所顯示，根據本發明的範例實施例的一電聚 製程設備⑽包括一腔室11〇’該腔室具有—開啟的頂 部及-電聚製程空間10, 一介電窗12()覆蓋該腔室n〇 的開啟的頂部，—窗框13G支撑該介電窗⑽，一天線 15〇放置在該介電t 120的一頂部，且在電激製程空間 10中產生-電感耦合電漿(ICP )，一電容耦合電漿(ccp) 框140安排於窗框130中且產生ccp，及一承受器16〇 安排於電漿製程空間10的内部，且在承受器160上安放 一待處理的物件。 一來源單元（未圖示）可提供於腔室U〇的頂部。該 來源單元供應處理氣體至電漿製程空間.10。—通氣單元 (未圖示）可提供於腔室110的底部。該通氣單元將腔 至110内部的氣體排出朝向腔室i丨〇的外部。 位於腔室no的頂部的窗框13〇可沿著腔室11〇的一 内壁或腔室110的開啟的頂部安排。（：(:^框14〇可安排 於窗框130的中央’且窗框13〇及cCP框14〇可分別或 一起支擇複數個介電窗12〇。窗框13〇及CCP框140將 在之後詳細說明。 安排於窗框130及CCP框140中的介電窗120係一絕 緣材料’該絕緣材料通常可包括一石英板，或可包括氮 201230889 化石夕（Si3N4)、碳切（SiC)、♦ (si)或類似的材料。 介電窗120係安排於窗框13〇及CCP框丨4〇中，且覆蓋 腔室no的開啟的頂部。介電窗12〇及各個框 的接觸表面係具有密封構件（未圖示），以保持電激製程 空間10密閉。 位於腔室11 〇内部的承受 丁 •的 τ貝邵 j面’在該頂部表面上可安置—基板s，作為待處理的 -:件。而且’若在承受器16〇上安置複數個晶圓，則 承文器160的頂部可形成複數個座位溝槽，在該等座位 溝槽上可安置各個晶圓。 立再者，可提供一加熱1 (未M示）於承受$ 16〇的内 :或下方’以便加熱基板s。而且，—承受器電源供應 j 1可連接至承受器16 0的一側，且供應電源至承受 益160。在承受器16〇與承受器電源供應器16丨之間， 可提供一匹配箱（未圖示），以優化承受器電源供應器 161的功率傳輸。 在承受器160下方，可安排一承受器桿162，以向上 及向下移動及/或旋轉承受器160。承受器桿162的—端 可穿透腔室110的一下部部分，且連接至位於腔室"Ο 外部的一驅動裝置（未圖示）。 以下將說明根據本發明的一範例實施例的電漿製程設 備1〇〇的窗框130及〇^?框140。第2圖係根據本發明 的—範例實施例的一電漿製程設備的一窗框、一 ccp 框、及—天線的一透視圖，且第3圖係沿著第2圖的a_a， 8 201230889 線取得的一截面視圖。 如第2圖中所顯示，ccp框14〇可放置於窗框13〇的 一中央部分，且被安排於與窗框13〇相同的平面上。可 形成CCP框140，使得-單-介電窗120可安排於CCP 框140之中或以一格子狀的圖案形成使得複數個介電 窗120可安排於由格子狀的圖案隔開的分別的空間中。 再者，一窗框130可放置在CCP框14〇的周圍，且支 撐其他複數個介電窗12〇。窗框13〇可配置成包括形成 框的外緣的一外部框131，及複數個橋接框132，該複數 個橋接框13 2經安排介於外部框J 3丨的内部及ccp框】4〇 的外部之間。 因此，複數個介電窗12〇可分別安排於複數個空間 中，該複數個空間係由橋接框132及窗框13〇的外部框 13 1及CCP框140的外部所形成。 舉例而言，如第2圖中所顯示，ccp框14〇具有方塊 的形式的N2格子狀的空間142，且窗框13〇具有複數個 格子狀的空間143,該複數個格子狀的空間143係由窗 框130的外部框131及分別連接（^卩框14〇的側面的複 數個橋接框13 2所隔開。 亦即’ CCP框U0包括N2格子狀的空間142，且窗框 130沿著CCP框140的周圍包括（N+2)2_N2格子狀的空間 143，所以CCP框140及窗框13〇在一起可具有方塊的 形式的（N+2)2格子狀的空間m2及143。 如第3圖中所顯示，從橋接框132的一端部分突起的 9 201230889 一支樓端133可形成於CCP框140及橋接框i32連接的 一部分之處，使得橋接框132可支撐CCP框140。在CCP 框140外部，可對應於支撐端133形成一支撐溝槽“ο 再者，提供一介電薄膜170於支撐端133與支撐溝槽144 之間’使得CCP框140及窗框130可彼此電氣絕緣。 "電薄膜1 70不僅供以作為一介電材料，而且亦作為 一密封構件’用於保持電漿製程空間10的密閉。在此情 況中’介電薄膜1 7 0可包括一彈性介電材料，例如，一 橡膠材料。而且，如第3圖中所顯示ν可額外提供一分 開的密封構件171。 如第2圖中所顯示，為了支撐介電窗12〇, cep框14〇 及由框130可包括一支撐突起134，在介電窗120所在 之處的—部分突出。在支撐突起134上，可提供以一彈 性材料作成且形狀類似一矩形環的襯墊（未圖示），以使 得分別的框130及140及介電窗12〇彼此緊密地接觸， 且保持電漿製程空間10密閉。 參照第2圖’天線150可提供於CCP框140、窗框130 及介電窗120上。天線150的形狀並非限於第2圖中所 顯不的形狀，且可取決於CCP框140及窗框13〇的結構 及電漿的密度及分佈而改變。 同時，用於供應射頻（RF)電源至天線150的一第一 電源供應器151可連接至天線150的一側，且用於供應 RF電源至CCP框140的一第二電源供應器】4丨可連接 至C C P框1 4 〇的一側。 10 201230889 從第電源供應器1 5 1施加至天線1 50的RF電源在腔 室Π0的電漿製程空間1〇中引發一電場，從而產生電感 耦合電漿，且從第二電源供應器141施加至ccp框14〇 的RF電源造成電容耦合電漿在ccp框14〇下方產生。 儘官未圖示，可分別在第一電源供應器151及天線150 之間，且在第二電源供應器141及CCp框140之間，提 供匹配箱（未圖示），從而優化各個電源供應器141、151 的功率傳輸。 而且，可在第一電源供應器151及第二電源供應器 之間提供一控制模組180。控制模組180控制分別從第 一電源供應器151及第二電源供應器141所施加的功率 及/或頻率。再者，控制模組18〇控制由第—電源供應器 151所產生的電感耦合電漿及由第二電源供應器i4i所 產生的電容耦合電漿的一比率，或控制電漿的特性。 依據以上的配置，根據本發明的一範例實施例的窗框 130包括CCP框140,而非具有一傳統框架的結構（其 中傳統框架結構的縱向框及橫向框彼此交又以支撐介電 窗120)，使得電容耦合電漿可在ccp框14〇之下方產生。 因此，電容耦合電漿不僅補償了在傳統框架的結構中 縱向框及橫向框彼此交叉之處的電感耦合電漿的減少， 而且促進電感麵合電漿的初始放電，且補充了電感耦合 電漿與電容耦合電漿相比，具有一相對低的處理速度的 缺點。 儘管已參考此處的範例實施例特別顯示且說明本發 11 201230889 明，但本領域技藝人士應瞭解可對形式及細節作成各種 改變，而不悖離由隨附申請專利範圍所界定的本發明的 精神及範疇。範例實施例應僅考慮為說明之用而非限制 的目的。所以，本發明的範疇並非由本發明的實施方式 所界定，但由隨附的申請專利範圍所界定，且在範疇之 中的所有差別將被理解為包括於本發明之中。 【圖式簡單說明】 第1圖係根據本發明的一範例實施例的—電漿製程設 備的一概要側向截面視圖。 第2圖係根據本發明的一範例實施例的一電漿製程設 備的-窗框、— CCP框、及—天線的一透視圖。° 第3圖係沿著第2圖的A_A’線取得的一截面視圖。 【主要元件符號說明】 13 3支樓端 134支撐突起 140電容耦合電漿框 141第二電源供應器 142 N2格子狀的空間 14 3格子狀的空間 144支撐溝槽 150天線 S基板 10電漿製程空間 100電漿製程設備 110腔室 120介電窗 130窗框 13 1外部框 132橋接框 12 201230889 151 第一電源供應器 170 160 承受器 171 161 承受器電源供應器 180 162 承受器桿 介電薄膜 密封構件 控制模組 13The 4 poles have a typical injection between the gas injection and the borrowing, thereby producing a sub-electrode or a substrate. 201230889 A typical ICP system applies a radio frequency (RF) power source to a coil type antenna and generates an electric field by inducing an electric field through the current of the antenna. Thus, a device using an ICP source is typically configured such that the coil type antenna is arranged outside of a plasma generating space having a dielectric window such as quartz to induce a space in the plasma generating space. electric field. Compared to the CCP source, the ICP source has the advantage of being able to generate electricity in a low pressure zone and yielding a high density of electricity. Therefore, there is a tendency to expand the field of using ICP sources. In the field of manufacturing of display devices, large-sized screens must involve large-sized substrates in accordance with consumer demand and production efficiency. In order to process a large-sized substrate, a large-sized dielectric window is required, but in view of the mechanical hardness of the dielectric window and the influence of the thickness of the dielectric window on the electrical system, it is generally preferred to arrange a plurality of media in a lattice-like frame. Electric window. However, the lattice-like frame shows a phenomenon in which the plasma density becomes lower at the position where the longitudinal frame and the lateral frame intersect each other. Therefore, there is a problem that the uniformity of the electropolymer is lowered. SUMMARY OF THE INVENTION Therefore, the description of the present invention is to solve the above problems' and the white-state of the present invention provides a device for the large-size substrate, t plasma. The process equipment can be used to generate plasma from A. In one aspect, ~~ 蕾妆..., the electrical destruction process equipment includes: a chamber, the cavity | 201230889 includes a plasma processing space and an open top; a dielectric window, the dielectric covers the cavity The top of the chamber; a window frame, the window frame, the dielectric window, an antenna 'the antenna is placed on the dielectric window, and an inductive surface-integrated plasma (ICP) is induced in the electro-polymerization process space Generating a capacitor light-repellent plasma (CCP) frame, the CCP frame is arranged below the antenna, and initiating a CCP in the plasma process space; and a susceptor arranged in the plasma In the process space, a substrate is placed on the susceptor as an object to be processed. As described above, a plasma processing apparatus according to an exemplary embodiment of the present invention implements both inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) to facilitate discharge of the initial inductively coupled plasma, preventing The plasma due to the frame is reduced and the process speed is improved. As described above, the technical effects of the present invention are not limited to the above effects, and other technical effects not mentioned above will be clearly understood by those skilled in the art from the following description. [Embodiment] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the exemplary embodiments of the present invention are not limited to the exemplary embodiments disclosed below, but may be implemented in various forms. The exemplified embodiments of the present invention are only provided to provide a complete understanding of the present invention and to enable those skilled in the art to fully understand the scope of the present invention. Appropriate or similar elements may be exaggerated for clarity of explanation in all figures, and element symbols like 201230889 represent similar elements. Hereinafter, an electropolymerization process apparatus according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic side cross-sectional view of an electropolymerization process apparatus in accordance with an exemplary embodiment of the present invention. As shown in FIG. 1, an electropolymerization process apparatus (10) according to an exemplary embodiment of the present invention includes a chamber 11' having a top portion and an electropolymerization process space 10, a dielectric window 12 ( Covering the open top of the chamber n ,, the sash 13G supports the dielectric window (10), an antenna 15 〇 is placed on top of the dielectric t 120, and generates an inductive coupling in the electrodynamic process space 10 A plasma (ICP), a capacitively coupled plasma (ccp) frame 140 is disposed in the sash 130 and generates a ccp, and a susceptor 16 is disposed inside the plasma processing space 10 and is placed on the susceptor 160. The item to be processed. A source unit (not shown) may be provided on top of the chamber U〇. The source unit supplies process gas to the plasma process space.10. - A venting unit (not shown) may be provided at the bottom of the chamber 110. The venting unit discharges the gas inside the chamber to 110 toward the outside of the chamber i. The sash 13 位于 at the top of the chamber no can be arranged along an inner wall of the chamber 11 或 or the open top of the chamber 110. (: (: ^ frame 14〇 can be arranged in the center of the window frame 130' and the window frame 13〇 and the cCP frame 14〇 can respectively or plurally select a plurality of dielectric windows 12〇. The window frame 13〇 and the CCP box 140 will The dielectric window 120 disposed in the sash 130 and the CCP frame 140 is an insulating material. The insulating material may generally include a quartz plate, or may include nitrogen 201230889 Fossil (Si3N4), carbon cut (SiC) ), ♦ (si) or similar material. The dielectric window 120 is arranged in the window frame 13 〇 and the CCP frame 〇 4 ,, and covers the open top of the chamber no. The dielectric window 12 〇 and the contact of each frame The surface has a sealing member (not shown) to keep the electro-excitation process space 10 sealed. The τ 邵 j j 位于 位于 inside the chamber 11 〇 can be placed on the top surface - the substrate s Processed -: piece. And 'If a plurality of wafers are placed on the receiver 16 ,, the top of the carrier 160 can form a plurality of seat grooves on which the individual wafers can be placed. Furthermore, a heating of 1 (not shown) can be provided within a range of $16 :: or below to heat the substrate s Moreover, the susceptor power supply j 1 can be connected to one side of the susceptor 16 0 and supply power to the benefit 160. A matching box can be provided between the susceptor 16 〇 and the susceptor power supply 16 丨(not shown) to optimize power transfer of the susceptor power supply 161. Under the susceptor 160, a susceptor rod 162 can be arranged to move and/or rotate the susceptor 160 up and down. The susceptor rod 162 The end portion can penetrate the lower portion of the chamber 110 and is connected to a driving device (not shown) located outside the chamber. A plasma processing apparatus according to an exemplary embodiment of the present invention will be described below. a window frame 130 and a frame 140. Figure 2 is a perspective view of a window frame, a ccp frame, and an antenna of a plasma processing apparatus according to an exemplary embodiment of the present invention, and Figure 3 is a cross-sectional view taken along line a_a, 8 201230889 of Figure 2. As shown in Figure 2, the ccp frame 14〇 can be placed in a central portion of the window frame 13〇 and arranged in The window frame 13 is on the same plane. The CCP frame 140 can be formed so that - single-dielectric The window 120 may be arranged in the CCP frame 140 or in a lattice-like pattern such that the plurality of dielectric windows 120 may be arranged in separate spaces separated by a lattice-like pattern. Further, a window frame 130 may be placed. Around the CCP frame 14〇, and supporting a plurality of other dielectric windows 12〇, the window frame 13〇 can be configured to include an outer frame 131 forming an outer edge of the frame, and a plurality of bridge frames 132, the plurality of bridge frames 13 2 is arranged between the inside of the outer frame J 3丨 and the outside of the ccp frame 4′′. Therefore, a plurality of dielectric windows 12〇 can be arranged in a plurality of spaces respectively, and the plurality of spaces are bridged by the bridge frame 132 and the outer frame 13 1 of the window frame 13 and the outside of the CCP frame 140 are formed. For example, as shown in FIG. 2, the ccp frame 14A has a N2 grid-like space 142 in the form of a square, and the window frame 13A has a plurality of lattice-shaped spaces 143, and the plurality of lattice-shaped spaces 143 It is separated by the outer frame 131 of the window frame 130 and the plurality of bridge frames 13 2 respectively connected to the side of the frame 14〇. That is, the 'CCP frame U0 includes the N2 grid-like space 142, and the window frame 130 The circumference of the CCP frame 140 includes a (N+2)2_N2 grid-like space 143, so that the CCP frame 140 and the window frame 13 are twisted together to have the (N+2)2 grid-like spaces m2 and 143 in the form of squares. As shown in FIG. 3, a 9201230889 piece of land 133 projecting from one end portion of the bridge frame 132 can be formed at a portion of the connection of the CCP frame 140 and the bridge frame i32 such that the bridge frame 132 can support the CCP frame 140. Outside the CCP frame 140, a support trench can be formed corresponding to the support end 133. " Further, a dielectric film 170 is provided between the support end 133 and the support trench 144" such that the CCP frame 140 and the sash 130 can be mutually Electrical insulation. "Electric film 1 70 is not only used as a dielectric material, but also as a The sealing member 'is used to keep the plasma process space 10 sealed. In this case, the dielectric film 170 may comprise an elastic dielectric material, for example, a rubber material. Moreover, as shown in FIG. 3, ν may be A separate sealing member 171 is additionally provided. As shown in Fig. 2, in order to support the dielectric window 12, the cep frame 14 and the frame 130 may include a support protrusion 134 where the dielectric window 120 is located - Partially protruding. On the support protrusion 134, a gasket (not shown) made of an elastic material and shaped like a rectangular ring may be provided, so that the respective frames 130 and 140 and the dielectric window 12 紧密 are in close contact with each other. And maintaining the plasma processing space 10 sealed. Referring to FIG. 2, the antenna 150 can be provided on the CCP frame 140, the window frame 130, and the dielectric window 120. The shape of the antenna 150 is not limited to the shape shown in FIG. 2, and It may vary depending on the structure of the CCP frame 140 and the sash 13A and the density and distribution of the plasma. Meanwhile, a first power supply 151 for supplying a radio frequency (RF) power source to the antenna 150 may be connected to the antenna 150. One side, and for supplying RF power to the CCP box 140 The second power supply can be connected to one side of the CCP box 1 4 。 10 201230889 The RF power applied from the first power supply 1 5 1 to the antenna 150 is in the plasma processing space of the chamber Π0. An electric field is induced to generate an inductively coupled plasma, and the RF power applied from the second power supply 141 to the ccp frame 14 turns the capacitively coupled plasma to be generated below the ccp frame 14A. A matching box (not shown) may be provided between the first power supply 151 and the antenna 150 and between the second power supply 141 and the CCp frame 140 to optimize the respective power supply. Power transfer of the 141, 151. Moreover, a control module 180 can be provided between the first power supply 151 and the second power supply. The control module 180 controls the power and/or frequency applied from the first power supply 151 and the second power supply 141, respectively. Furthermore, the control module 18 controls a ratio of the inductively coupled plasma generated by the first power supply 151 and the capacitively coupled plasma generated by the second power supply i4i, or controls the characteristics of the plasma. According to the above configuration, the window frame 130 according to an exemplary embodiment of the present invention includes the CCP frame 140 instead of the structure having a conventional frame (wherein the vertical frame and the lateral frame of the conventional frame structure are in contact with each other to support the dielectric window 120). ), so that the capacitively coupled plasma can be generated below the ccp frame 14〇. Therefore, the capacitively coupled plasma not only compensates for the reduction of the inductively coupled plasma where the longitudinal and lateral frames intersect each other in the structure of the conventional frame, but also promotes the initial discharge of the inductively bonded plasma, and supplements the inductively coupled plasma. Compared to capacitively coupled plasmas, it has the disadvantage of a relatively low processing speed. Although the present invention has been particularly shown and described with reference to the exemplary embodiments herein, it will be understood by those skilled in the art that the present invention can be modified in various forms and details without departing from the scope of the invention as defined by the appended claims. Spirit and scope. The example embodiments should be considered for purposes of illustration only and not for limitation. Therefore, the scope of the invention is not to be construed as being limited by the scope of the invention, but the scope of the invention is defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic side cross-sectional view of a plasma processing apparatus in accordance with an exemplary embodiment of the present invention. Figure 2 is a perspective view of a sash, a CCP frame, and an antenna of a plasma processing apparatus in accordance with an exemplary embodiment of the present invention. ° Fig. 3 is a cross-sectional view taken along line A_A' of Fig. 2. [Main component symbol description] 13 3 branch end 134 support protrusion 140 capacitive coupling plasma frame 141 second power supply 142 N2 grid-like space 14 3 grid-like space 144 support trench 150 antenna S substrate 10 plasma process Space 100 plasma processing equipment 110 chamber 120 dielectric window 130 window frame 13 1 outer frame 132 bridge frame 12 201230889 151 first power supply 170 160 susceptor 171 161 susceptor power supply 180 162 susceptor rod dielectric film Sealing member control module 13