CN116555898A - Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof - Google Patents
Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof Download PDFInfo
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- CN116555898A CN116555898A CN202210774249.2A CN202210774249A CN116555898A CN 116555898 A CN116555898 A CN 116555898A CN 202210774249 A CN202210774249 A CN 202210774249A CN 116555898 A CN116555898 A CN 116555898A
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000843 powder Substances 0.000 title claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 76
- 239000010439 graphite Substances 0.000 claims abstract description 76
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 6
- 238000002109 crystal growth method Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 abstract description 12
- 230000008022 sublimation Effects 0.000 abstract description 12
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
The invention discloses a high-powder-source-utilization PVT-method-grown silicon carbide crucible structure, which comprises a crucible body, wherein a graphite tube is arranged in the crucible body, the graphite tube is arranged in the silicon carbide powder source, and the outer wall of the graphite tube is provided with uniform gas escape holes. The silicon carbide growing method using the crucible structure comprises the steps of placing a silicon carbide powder source into the crucible structure, presetting the temperature, heating the crucible structure, and annealing to obtain silicon carbide crystals. On the basis of the original crucible, the graphite tube is added at the center of the crucible, so that convection of silicon carbide airflow at the center after high-temperature sublimation is facilitated, the temperature of silicon carbide powder at the center is increased, and the sublimation efficiency of silicon carbide at the center is improved. Meanwhile, the graphite tube increases the contact area between the silicon carbide powder and the high-temperature air flow, is favorable for the escape of silicon carbide gas in the silicon carbide powder source, and further improves the sublimation efficiency of the silicon carbide.
Description
Technical Field
The invention belongs to the technical field of flow field and thermal field design in crystal growth, and particularly relates to a PVT method growth silicon carbide crucible structure for improving powder source utilization efficiency and a growth method thereof.
Background
Silicon carbide is the most important crystal material in the third-generation semiconductor field, and has very excellent electronic properties, including wide forbidden band, high breakdown electric field strength, high thermal conductivity, saturated electron mobility and the like. Electronic devices made based on silicon carbide substrates have been widely used in emerging areas of economy and society, including new energy automobiles, 5G communication base stations, and radars, among others. The main method of commercial production of silicon carbide is the Physical Vapor Transport (PVT) method, and therefore the method relies on sublimation of polycrystalline silicon carbide powder followed by recrystallization on the surface of the seed crystal, also known as sublimation. The working principle of the method is mainly that a graphite crucible (the maximum temperature can be more than 2000 ℃) is heated by an electromagnetic coil or a resistance heater, a silicon carbide powder source at the bottom of the crucible sublimates under the heating action of the crucible, and crystals are formed on the surface of a seed crystal with lower temperature at the top of the crucible, so that a monocrystalline silicon carbide ingot is obtained.
The main method for reducing the production cost of silicon carbide is to grow large-size ingots, the current commercial production of silicon carbide crystals reaches 6 inches, and the growth and development of 8-inch silicon carbide ingots are ongoing. The growth of large-size silicon carbide crystals requires a larger crucible, and as the size of the crucible increases, the phenomenon of uneven temperature distribution inside the silicon carbide powder source is more serious, the sublimation of the silicon carbide powder source is restricted by the lower center temperature of the powder source, and the silicon carbide sublimated into gas is recrystallized at the center of the powder source, so that the center of the powder source is hardened, the utilization efficiency of the powder source is reduced, and the cost of the silicon carbide in the growth process is increased. Meanwhile, due to the reduction of the utilization efficiency of the powder source, the frequency of powder source replacement in the crystal growth process is increased, and the time cost of crystal growth is also increased. For example, in chinese patent CN 112144110A, the crucible is heated unevenly, resulting in uneven temperature distribution inside the silicon carbide powder source.
Disclosure of Invention
The invention aims to provide a PVT method growth silicon carbide crucible structure for improving the utilization efficiency of a powder source, which improves the internal temperature of the powder source and the escape area of sublimated gas by adding a graphite pipe in a crucible body, thereby improving the utilization efficiency of the powder source.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a high powder source utilization ratio PVT method growth carborundum crucible structure, includes the crucible body, contains the carborundum powder source in the crucible body, is equipped with the graphite pipe in the crucible body, and the carborundum powder source encloses the graphite pipe, and the pipe outer wall of graphite pipe is equipped with gas escape hole.
Considering that the larger the size of the crucible is, the lower the temperature of the silicon carbide powder at the center is compared with the temperature of the silicon carbide powder at the wall surface of the crucible, on the basis of the original crucible, the graphite tube is added at the center of the crucible, so that convection of the silicon carbide gas flow at the center after high-temperature sublimation is facilitated, the temperature of the silicon carbide powder at the center is increased, and the sublimation efficiency of the silicon carbide at the center is improved. Meanwhile, the graphite tube increases the contact area between the silicon carbide powder and the high-temperature air flow, is favorable for the escape of silicon carbide gas in the silicon carbide powder source, and further improves the sublimation efficiency of the silicon carbide.
Further, the porosity of the graphite tube is not less than the porosity of the powder source so as to promote sufficient convection between the free flow area and the porous medium powder source area and ensure that silicon carbide sublimated gas in the center of the powder source can smoothly escape from the graphite tube.
Further, the porosity of the silicon carbide powder source is 0.3-0.5, and the porosity of the outer wall of the graphite tube is 0.45-0.65.
Further, the number of the graphite tubes is 4-8.
Further, the graphite tubes are arranged in such a manner that 1 of them is arranged at the center of the crucible, and the remaining graphite tubes are evenly arranged along an annular array at 1/2 of the radius of the crucible body.
Further, the height of the graphite tube is greater than or equal to the height of the upper surface of the silicon carbide powder source.
Further, the inner diameter of the graphite tube is 1/5 of the inner diameter of the crucible body.
Further, the wall thickness of the graphite tube is not more than 1/10 of the outer diameter of the graphite tube.
The design of graphite tube size, its main objective is through placing in the powder inside, realizes the purpose of high temperature sublimation gas and the inside convection heat transfer of powder, improves the inside temperature of powder, reduces the inside recrystallization of powder and hardening degree, increases the inside escape area of sublimation gas of powder simultaneously to reach the purpose that improves powder utilization efficiency.
A silicon carbide crystal growth method for growing a silicon carbide crucible structure by using a high-powder-source-utilization PVT method comprises the following steps:
(1) Placing a graphite tube in the center of a crucible body and uniformly arranging the graphite tube in a circular array with the radius of 1/2, and then placing silicon carbide powder source particles into the crucible body, wherein the silicon carbide powder source is positioned outside the graphite tube;
(2) Integrally placing the crucible body loaded with the silicon carbide powder source particles and the graphite tube into a coil heating furnace;
(3) Vacuumizing the crucible by using a vacuum pump, introducing protective gas after the vacuum pumping is finished, presetting the temperature, heating a crucible structure, sublimating silicon carbide powder close to a crucible body into silicon carbide gas, flowing the silicon carbide gas into a graphite pipe through a growth gas area, and then penetrating into the center of a silicon carbide powder source from a gas escape hole of the graphite pipe to improve the temperature of the center of the silicon carbide powder source;
(4) And after heating, annealing treatment is carried out to obtain the silicon carbide crystal.
Preferably, the specific heating step of step (3) is as follows:
the crucible structure is subjected to three heating stages, wherein the preset temperature of the first heating stage is 1650-1740 ℃, the preset time of the first heating stage is 15-30 min, the preset temperature of the second heating stage is 2185-2285 ℃, the preset time of the second heating stage is 24-36 h, the preset temperature of the third heating stage is 2300-2400 ℃, and the preset time of the third heating stage is 8-12 h.
By adopting the technical scheme, the invention has the following beneficial effects:
according to the invention, through the crucible device with the graphite tube structure, in the silicon carbide growth process, high-temperature sublimated gas in the growth flow area can exchange heat with the center of the silicon carbide powder source, so that the temperature of the center of the silicon carbide powder source is increased, the sublimation efficiency of the center of the silicon carbide powder source is improved, and the hardening degree of the center of the silicon carbide powder source is reduced. The graphite tube has good thermal conductivity, and the high temperature of the silicon carbide gas is transferred to the center of the silicon carbide powder source through the graphite tube. In addition, the graphite tube is made of a graphite material with a porous structure, the porosity of the graphite tube is not less than that of the silicon carbide powder source, heat exchange is enhanced, and meanwhile, the escape of silicon carbide sublimated gas in the center of the silicon carbide powder source is facilitated, so that the material conveying efficiency is improved, and the utilization efficiency of the silicon carbide powder source is further improved. The crucible structure of the invention not only can be used for the growth of silicon carbide, but also is suitable for other crystal materials grown by a physical vapor transport method. Meanwhile, the graphite tube adopted by the invention has stable structure, high reliability, repeated utilization in the crystal growth process and lower cost.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic view of a crucible structure according to the present invention;
FIG. 2 is a top view of the crucible structure of the present invention;
FIG. 3 (a) is a temperature distribution cloud of a conventional crucible;
FIG. 3 (b) is a cloud view showing the temperature distribution of the crucible structure of the present invention;
FIG. 4 (a) is a flow field distribution cloud of a conventional crucible;
FIG. 4 (b) is a flow field distribution cloud of the crucible structure of the present invention.
Detailed Description
The structure of the PVT method grown silicon carbide crucible with high powder source utilization rate is shown in figure 1, and comprises a crucible body 1, a growth gas zone 2, a graphite tube 3 and a silicon carbide powder source 4. The crucible body 1 is internally provided with a silicon carbide powder source 4, the graphite tube 3 is fixed at the bottom of the crucible body 1, and a space above the silicon carbide powder source 4 forms a growth gas zone 2.
According to the invention, 5 graphite tubes 3 are adopted and are dispersed in a crucible body 1, as shown in fig. 2, and the whole device is set as follows:
R2＝R1/2；
R3＝R1/5；
δ＝R3/5；
wherein delta is the wall thickness of the graphite tube 3, R1 is the radius of the inner wall of the crucible body 1, R2 is the radius of the array ring of the graphite tube 3, and R3 is the radius of the graphite tube 3. The height of the graphite tube 3 is equal to or greater than the height of the silicon carbide powder source 4.
The radius R1 of the inner wall of the large-size crucible body 1 is 110 mm-130 mm, and the wall thickness of the crucible body 1 is 15 mm-30 mm; the radius R3 of the graphite tube 3 is 15-25 mm, and the wall thickness delta of the graphite tube 3 is 3-5 mm; the whole height of the graphite crucible is 400 mm-500 mm; the height of the silicon carbide powder source 4 is 150-250 mm.
In order to increase the internal temperature of the silicon carbide powder source 4 and the escape area of sublimated gas as much as possible and simultaneously reduce the volume of the powder source excessively, the invention adopts 5 graphite pipes 3. Fig. 3 (a) is a temperature distribution cloud of a conventional crucible, and fig. 3 (b) is a temperature distribution cloud of a crucible structure in the present invention. Fig. 4 (a) is a flow field distribution cloud of a conventional crucible, and fig. 4 (b) is a flow field distribution cloud of a crucible structure in the present invention. As can be seen from a comparison of FIG. 3 (a) and FIG. 3 (b), the internal temperature of the silicon carbide powder source 4 in the crucible structure is obviously improved under the condition of adopting the device of the invention. As can be seen from a comparison of fig. 4 (a) and fig. 4 (b), the mass exchange strength between the sublimated gas and the free flowing area inside the silicon carbide powder source 4 is enhanced, which is beneficial to the improvement of the utilization efficiency of the silicon carbide powder source 4 in the silicon carbide crystal growth process.
A silicon carbide crystal growth method for growing a silicon carbide crucible structure by using a high-powder-source-utilization PVT method comprises the following steps:
(1) Placing a graphite tube 3 in the center of a crucible body 1 and uniformly arranging the graphite tube in a circular array at the radius of 1/2, and then placing particles of a silicon carbide powder source 4 into the crucible body 1, wherein the silicon carbide powder source 4 is positioned outside the graphite tube 3;
(2) The crucible body 1 loaded with the silicon carbide powder source 4 particles and the graphite tube 3 is integrally put into a coil heating furnace;
(3) Vacuumizing the crucible by using a vacuum pump, introducing protective gas argon after the vacuum pumping is finished, heating the crucible structure, wherein the crucible structure is subjected to three heating stages, the preset temperature of the first heating stage is 1650-1740 ℃, the preset time of the first heating stage is 15-30 min, the preset temperature of the second heating stage is 2185-2285 ℃, the preset time of the second heating stage is 24-36 h, the preset temperature of the third heating stage is 2300-2400 ℃, and the preset time of the third heating stage is 8-12 h;
(4) And after heating, annealing treatment is carried out to obtain the silicon carbide crystal.
As shown in fig. 1 and 4 (b), the silicon carbide powder 4 near the crucible body 1 sublimates into silicon carbide gas, the silicon carbide gas flows into the graphite tube 3 through the growth gas zone 2, part of the silicon carbide gas flows out upwards from the center of the graphite tube 3, part of the silicon carbide gas permeates into the center of the silicon carbide powder source 4 from the gas escape hole of the graphite tube 3, and the temperature of the center of the silicon carbide powder source 4 is increased. And the graphite tube 3 has good thermal conductivity, and the high temperature of the silicon carbide gas is transferred to the center of the silicon carbide powder source 4 through the graphite tube 3. The bottom of the graphite tube 3 is provided with a junction between upward and downward air flows through which the substance and heat exchange takes place.
Because the graphite tube 3 enhances the flow and the material exchange between the free flow and the silicon carbide powder source 4, the heating speed of the crucible structure needs to be reduced to improve the stability and uniformity of the air flow, the heating time and the preset heating time of the first preset temperature are properly increased, and the structural device can reduce the heat absorption capacity of the whole silicon carbide powder source 4.
The annealing process of the silicon carbide crystal is common knowledge and will not be described in detail in this application.
The above is only a specific embodiment of the present invention, but the technical features of the present invention are not limited thereto. Any simple changes, equivalent substitutions or modifications made on the basis of the present invention to solve the substantially same technical problems and achieve the substantially same technical effects are encompassed within the scope of the present invention.
Claims (10)
1. The utility model provides a high powder source utilization ratio PVT method growth carborundum crucible structure which characterized in that: the crucible comprises a crucible body, a silicon carbide powder source is contained in the crucible body, a graphite tube is arranged in the crucible body, the graphite tube is enclosed by the silicon carbide powder source, and a gas escape hole is formed in the outer wall of the graphite tube.
2. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the porosity of the graphite tube is not smaller than that of the silicon carbide powder source.
3. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the porosity of the silicon carbide powder source is 0.3-0.5, and the porosity of the outer wall of the graphite tube is 0.45-0.65.
4. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the number of the graphite tubes is 4-8.
5. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the graphite tubes are arranged in a mode that 1 graphite tube is arranged in the center of the crucible, and the rest graphite tubes are evenly arranged along the circular array at 1/2 of the radius of the crucible body.
6. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the height of the graphite tube is larger than or equal to the height of the upper surface of the silicon carbide powder source.
7. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the inner diameter of the graphite tube is 1/5 of the inner diameter of the crucible body.
8. The high-powder-source-utilization PVT-method-grown silicon carbide crucible structure according to claim 1, wherein the structure is characterized in that: the wall thickness of the graphite tube is not more than 1/10 of the outer diameter of the graphite tube.
9. A silicon carbide crystal growth method for growing a silicon carbide crucible structure using the Gao Fenyuan-use PVT method according to any one of claims 1 to 8, comprising the steps of:
(1) Placing a graphite tube in the center of a crucible body and uniformly arranging the graphite tube in a circular array with the radius of 1/2, and then placing silicon carbide powder source particles into the crucible body, wherein the silicon carbide powder source is positioned outside the graphite tube;
(2) Integrally placing the crucible body loaded with the silicon carbide powder source particles and the graphite tube into a coil heating furnace;
(3) Vacuumizing the inside of a crucible structure by using a vacuum pump, introducing protective gas after the vacuum pumping is finished, presetting the temperature, heating the crucible structure, sublimating silicon carbide powder close to a crucible body into silicon carbide gas, enabling the silicon carbide gas to flow into a graphite pipe through a growth gas area, and then penetrating into the center of the silicon carbide powder from a gas escape hole of the graphite pipe to improve the temperature of the center of the silicon carbide powder;
(4) And after heating, annealing treatment is carried out to obtain the silicon carbide crystal.
10. The method for growing silicon carbide crystals with a high-powder-source-utilization PVT method for growing a silicon carbide crucible structure according to claim 9, wherein the method comprises the steps of: the specific heating step of the step (3) is as follows:
the crucible structure is subjected to three heating stages, wherein the preset temperature of the first heating stage is 1650-1740 ℃, the preset time of the first heating stage is 15-30 min, the preset temperature of the second heating stage is 2185-2285 ℃, the preset time of the second heating stage is 24-36 h, the preset temperature of the third heating stage is 2300-2400 ℃, and the preset time of the third heating stage is 8-12 h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210774249.2A CN116555898A (en) | 2022-07-01 | 2022-07-01 | Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof |
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| CN202210774249.2A CN116555898A (en) | 2022-07-01 | 2022-07-01 | Silicon carbide crucible structure grown by PVT method with high powder source utilization rate and growth method thereof |
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|---|---|---|---|---|
| JP2009040637A (en) * | 2007-08-09 | 2009-02-26 | Denso Corp | Manufacturing method and manufacturing apparatus for silicon carbide single crystal |
| CN102899718A (en) * | 2012-10-25 | 2013-01-30 | 西安理工大学 | Silicon carbide crystal growth method for increasing crystal growth rate |
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN210974929U (en) * | 2019-09-12 | 2020-07-10 | 浙江博蓝特半导体科技股份有限公司 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
| CN214830783U (en) * | 2021-03-30 | 2021-11-23 | 浙江大学杭州国际科创中心 | Crucible structure for growing silicon carbide single crystal |
-
2022
- 2022-07-01 CN CN202210774249.2A patent/CN116555898A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009040637A (en) * | 2007-08-09 | 2009-02-26 | Denso Corp | Manufacturing method and manufacturing apparatus for silicon carbide single crystal |
| CN102899718A (en) * | 2012-10-25 | 2013-01-30 | 西安理工大学 | Silicon carbide crystal growth method for increasing crystal growth rate |
| CN106367812A (en) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | Graphite crucible capable of enhancing radial temperature uniformity of silicon carbide powder source |
| CN210974929U (en) * | 2019-09-12 | 2020-07-10 | 浙江博蓝特半导体科技股份有限公司 | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus |
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