CN206396359U - SiC Crystal Growth Equipment - Google Patents
SiC Crystal Growth Equipment Download PDFInfo
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- CN206396359U CN206396359U CN201621371228.2U CN201621371228U CN206396359U CN 206396359 U CN206396359 U CN 206396359U CN 201621371228 U CN201621371228 U CN 201621371228U CN 206396359 U CN206396359 U CN 206396359U
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Abstract
The utility model discloses a kind of SiC Crystal Growth Equipment, including vacuum chamber, chamber heater, crucible device, crucible cover temperature-adjusting device and control device.Vacuum chamber includes the vacuum cavity with open end and is seal-installed on the sealing flange of open end；Crucible device is arranged in vacuum chamber, including crucible body and closure with top end opening are in the crucible cover of top end opening, and crucible body is used to contain carbonization silicon material, and crucible cover bottom is provided with a seed crystal；Control device includes the Temperature sampler and controller of the temperature data of collection crucible cover bottom, controller storage inside has a plurality of with the crystal back temperature curve of crystal growth thickness change, controller is used for the crucible cover bottom temp data for receiving Temperature sampler transmission, and crucible cover temperature-adjusting device is controlled according to this, so that crucible cover temperature is consistent with crystal back temperature curve.The crystal mass grown using the utility model is high.
Description
Technical field
The utility model is related to a kind of SiC Crystal Growth Equipment that carborundum crystals are grown for PVT methods.
Background technology
Carborundum (SiC) monocrystalline has that high thermal conductivity, high-breakdown-voltage, carrier mobility be high, chemical stability very
High excellent semiconductor physics, can be fabricated to the high frequency worked under high temperature, intense radiation conditions, high power electronic device
Part and opto-electronic device, have huge application value in national defence, high-tech, industrial production, power supply, field of power transformation, are counted as
The third generation semiconductor material with wide forbidden band of great development prospect.But, growth carborundum crystals are extremely difficult, by exerting for many years
Power, has now successfully grown the height of major diameter with physical vapor transport (PVT) using Gree companies of the U.S. as the laboratory of representative
Simultaneously epitaxial substrate is made in quality silicon carbide silicon single crystal, and the excellent electronics device of multiple performance has been succeeded in developing with single-crystal silicon carbide epitaxial wafer
Part and opto-electronic device.
As shown in figure 1, Fig. 1 is the structural representation of traditional SiC Crystal Growth Equipment, it includes vacuum chamber 7, set
The attemperator 4 that is placed in the vacuum chamber 7, be arranged at closed graphite crucible 1 in the attemperator 4 with upper lid and to
Heater that vacuum chamber 7 is heated etc..
When at present, using PVT technology growth carborundum crystals, a certain amount of powdery or shape are housed in the bottom of graphite crucible 1
Grained silicon carbide material 2, be spaced a distance in carbonization silicon material 2 top, a single-crystal silicon carbide piece is pasted onto as seed crystal 3
On the upper lid of graphite crucible, attemperator 4 surrounds the periphery and bottom for being arranged at graphite crucible 1.Portion is covered in the upper of graphite crucible 1
Technological requirement is provided with the appropriate thermal insulation element 5 of thickness that center is provided with thermometer hole 6, attemperator 4 and thermal insulation element 5 are common
Graphite crucible is set to form the temperature field of suitable growing silicon carbice crystals.Graphite crucible 1, all put together with attemperator 4 of surrounding etc.
Put in a vacuum chamber 7 with isolated from atmosphere, during growth crystal, vacuum chamber 7 is evacuated to after the vacuum of technique needs, then
The scope for being filled with the high-purity Ar gas of proper air pressure and making air pressure be maintained at technique needs by gas pressure in vacuum automatic control system
It is interior.Graphite crucible 1 is set to reach the high temperature of needs and be controlled automatically by temperature by the sensing heating of heater such as induction coil 8
The carbonization silicon material 2 that system processed is kept the temperature in such as 2000 DEG C -2500 DEG C of the high temperature of technique needs, graphite crucible 1 is in high temperature
Saturated vapor is flashed to, is acted on by diffusion and gaseous exchange and is transported to the relatively low surface regelation of seed crystal 3 of temperature, forming core,
Crystallization, makes seed crystal 3 gradually grow up into one big crystal.
During PVT methods growth carborundum crystals, the shape of the structure of SiC Crystal Growth Equipment, such as graphite crucible 1
The several factors such as shape and structure, induction coil frequency, heating power, attemperator, gas pressure in vacuum can all influence graphite crucible
Interior temperature distribution evenness, thus have significant impact to crystal growth and crystal mass, lot of domestic and international laboratory is asked with regard to this
Topic made numerous studies, delivered many articles about testing with computer simulation.Such as document 1：Self-congruent
process of SiC growth by physical vapor transport D.I.Cherednichenkoa,
R.V.Drachevb, T.S.Sudarshan Journal of Crystal Growth 262 (2004) 175-181, this is it
In an example.
As shown in Fig. 2 Fig. 2 is the hot-fluid and Temperature Distribution when growing carborundum crystals in graphite crucible in document 1
Mathematical modeling.Wherein Tc is crystal back temperature, and Ts is crystal plane (crystal front) temperature, and Tv is carborundum charge level temperature, and S is
Crystal growth thickness, Δ Tc is crystal plane and the temperature difference at the crystal back side, and d is distance of the crystal plane away from carbonization silicon material upper surface,
Δ Tv is the temperature difference between crystal plane and carbonization silicon material upper surface.ΔTGIt is the temperature of carbonization silicon material upper surface and the crystal back side
Difference, SRCFor the average height (representing carborundum doses size) for the silicon material that is carbonized, THIt is the temperature of heater, represents and carry out self-heating
The heat energy size of device.And QVAnd QWRepresent carbonization silicon material and heater by heat transfer and radiant heat transfer to crystallization respectively
The heat in face.L represents the latent heat of crystal.Fi represents distillation steam transmission total amount, and V represents crystallization rate.
Wherein carborundum charge level and crystal plane temperature difference Δ Tv are the transmission power of distillation steam, its size and degree of stability
Decisive role is played for crystallization process and quality.Carborundum charge level Tv temperature is relatively stablized, but crystal plane temperature Ts can be with
Crystallize the increase of thickness rather than linearly increasing, temperature difference is reduced between causing two sides, further result in crystallization rate V and reduce even
Stop growing.Unstable temperature difference and the speed of growth can cause a variety of crystal defects to produce, it is difficult to grow high-quality crystalline substance
Body.
Above- mentioned information is only used for strengthening the understanding of background of this disclosure disclosed in background section, therefore it can be with
Including not constituting the information to prior art known to persons of ordinary skill in the art.
Utility model content
The purpose of this utility model is that overcoming above-mentioned the deficiencies in the prior art to be used for PVT methods there is provided one kind grows carbonization
Silicon wafer body technology simultaneously can keep crystal structure face to be set with the carbonization substantially invariable growing silicon carbice crystals of silicon material upper surface temperature difference
It is standby.
According to one side of the present utility model, a kind of SiC Crystal Growth Equipment, including the heating of vacuum chamber, chamber
Device, crucible device, crucible cover temperature-adjusting device and control device.Wherein vacuum chamber includes the vacuum with open end
Cavity and the sealing flange for being seal-installed on the open end；Chamber heater is used to give vacuum chamber heating；Earthenware
Crucible device is arranged in the vacuum chamber, including crucible body and closure with top end opening are in the top end opening
Crucible cover, the crucible body is used to contain carbonization silicon material, and the crucible cover bottom is provided with a seed crystal, and the seed crystal can grow into one
Crystal；Crucible cover temperature-adjusting device is used to heat the crucible cover；Control device includes Temperature sampler and controller, temperature
Collector is used for the temperature data for gathering the crucible cover bottom；Controller storage inside has a plurality of as crystal growth thickness becomes
The crystal back temperature curve of change, the controller is used to receive the crucible cover bottom temp that the Temperature sampler is sent
Data, and the crucible cover temperature-adjusting device is controlled according to this, so that the crucible cover temperature is bent with the crystal back temperature
Line is consistent.
According to an embodiment of the present utility model, the crucible cover is cylindrical in shape, with cylinder bottom and cylinder, the crucible cover
Temperature-adjusting device is arranged in the cylinder and the neighbouring or contact cylinder bottom.
According to an embodiment of the present utility model, the thickness at the cylinder bottom of the crucible cover is 3mm-5mm.
According to an embodiment of the present utility model, the end periphery with the cylinder bottom of the cylinder is provided with annular
Groove, the annular groove have side seals and end sealing, the crucible body medial surface and top end face difference corresponding matching in
The side seals and end sealing.
According to an embodiment of the present utility model, the crucible cover temperature-adjusting device includes vortex load coil
And refrigerating plant, the gap between the crucible cover temperature-adjusting device and the crucible cover is 8-15mm.
According to an embodiment of the present utility model, electrode is heated in connection on the vortex load coil, and is passed through
The heating electrode is fixed on the sealing flange.
According to an embodiment of the present utility model, the cross section of the vortex load coil is in hollow rectangle shape
Shape.
According to an embodiment of the present utility model, the vortex load coil and the refrigerating plant are integrated into one
Body, the refrigerating plant includes two cooling water pipes for being connected to the vortex load coil both ends.
According to an embodiment of the present utility model, the Temperature sampler is infrared radiation thermometer, on the sealing flange
Provided with thermometer hole, the crucible cover temperature-adjusting device is being provided with through hole corresponding to the thermometric hole site.
According to an embodiment of the present utility model, wherein also including attemperator, it is arranged in the vacuum chamber,
And surround the crucible body and the part crucible cover.
As shown from the above technical solution, advantage of the present utility model and advantageous effects are：The utility model is carbonized
Crystal growth equipment includes the crucible cover temperature-adjusting device and control device for being used to heat the crucible cover, control device
Temperature sampler and controller including that can gather crucible cover bottom temp data in real time, control device can be according to crucible cover bottom
Temperature data controls the crucible cover temperature-adjusting device to be consistent by the preferable crystal back temperature curve of a setting, from
And cause crystal structure face and carbonization silicon material upper surface temperature difference substantially constant, and then the speed of growth of crystal is kept stable,
Significantly improve the crystal mass grown.
By description of a preferred embodiment referring to the drawings in the utility model, it is of the present utility model above-mentioned and its
Its objects, features and advantages will be apparent from.
Brief description of the drawings
Fig. 1 is the structural representation of traditional SiC Crystal Growth Equipment；
The mathematical modeling of hot-fluid and Temperature Distribution when Fig. 2 is growth carborundum crystals in graphite crucible；
Fig. 3 is the schematic diagram of the embodiment of the utility model SiC Crystal Growth Equipment one；
Fig. 4 is Fig. 3 partial enlarged drawing；
Fig. 5 is the crystal back temperature curve map that Virtual Reactor simulation softwards system is obtained；
Fig. 6 be Fig. 3 shown in SiC Crystal Growth Equipment in control device control principle drawing.
In figure：9th, crucible body；10th, be carbonized silicon material；12nd, attemperator；13rd, helical load coil；14th, vacuum chamber
Body；15th, cylinder bottom；16th, cylinder；17th, electrode is heated；18th, infrared radiation thermometer；19th, thermometric interface；20th, cooling water pipe；21st, it is vortexed
Load coil；22nd, seed crystal；23rd, crystal；24th, sealing flange；28th, the crystal back side；30th, crystal plane；31st, through hole；35th, stone
Mo Tuo.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment those skilled in the art is comprehensively conveyed to.Identical accompanying drawing in figure
Mark represents same or similar structure, thus will omit their detailed description.
Referring to Fig. 3 and Fig. 4, Fig. 3 is the schematic diagram of the embodiment of the utility model SiC Crystal Growth Equipment one；Fig. 4
It is Fig. 3 partial enlarged drawing.As shown in Figure 3 and Figure 4, the embodiment of the utility model SiC Crystal Growth Equipment one includes true
Plenum chamber, chamber heater, crucible device, crucible cover temperature-adjusting device and control device.
Vacuum chamber can be surrounded by vacuum cavity 14 and sealing flange 24 with open end.Sealing flange 24 can be with
The firm connection with the upper surface of vacuum cavity 14 is realized by screw or clip.Preferably, sealing flange 24 can pass through resistance to height
The graphite screws that warm screw is for example made of high purity graphite material are seal-installed on the open end of vacuum cavity 14.When using by
Vacuum chamber is evacuated to the vacuum needed for technique, such as 3 × 10 by vaccum-pumping equipment-4Pa。
Chamber heater is used for heating, vacuum chamber, and it can be set outside vacuum chamber, chamber heater
It can be helical load coil 13 etc..
Crucible device is arranged in vacuum chamber, and it includes crucible body 9 and closure with top end opening on top
The crucible cover of opening.Crucible body 9 is used to contain carbonization silicon material 10, and crucible cover lower surface is pasted with a seed crystal 22, uses PVT skills
Art grows carborundum craft, and the seed crystal 22 can grow into a crystal 23.
In the first embodiment, crucible cover is cylindrical, with cylinder bottom 15 and cylinder 16, and cylinder bottom 15 can be thickness
For the thick Thin Disks of 3mm to 5mm, to reduce thermal resistance, facilitate the accurate control of temperature.Crucible cover temperature-adjusting device can be set
In cylinder 16 and adjacent to cylinder bottom 15.The bottom periphery of cylinder 16 of crucible cover is provided with annular groove, and the annular groove has side seal
Portion and end sealing, the side seals and end sealing distinguish corresponding matching in the medial surface and top end face of crucible body 9.So
On the one hand the sealing property of crucible device is improved, on the other hand a bottom 15 can be caused to stretch into cylinder 16, is more beneficial for protecting
Hold that a bottom 15 is constant, be easy to the accurate control of temperature.
It should be appreciated that the structure of crucible cover is not limited to concrete structure exemplified above in crucible device of the present utility model
Form, the crucible cover of other structures form can be applied to the utility model such as a flat crucible cover.
Crucible cover temperature-adjusting device is used for the temperature for adjusting crucible cover, so that the seed crystal 22 for being arranged at crucible cover is grown into
During crystal 23, the crystal plane 30 (see Fig. 4) on the surface of crystal 23 can keep suitable temperature.Crucible cover temperature-adjusting device
It can directly be contacted between crucible cover, a gap can also be kept, when crucible cover is tabular, the gap can be flat board
The distance between shape crucible cap upper surface and crucible cover temperature-adjusting device lower surface；When crucible cover is cylindrical in shape, the gap can
To be the distance between upper surface and the crucible cover temperature-adjusting device lower surface at a bottom 15.
Crucible cover temperature-adjusting device can include vortex load coil 21 and refrigerating plant.Vortex sensing heating line
Connection heating electrode 17 on circle 21.Now, 8-15mm gap can be kept between vortex load coil 21 and crucible cover,
Specifically can be according to the thermostatic heating-up temperature of crucible cover and efficiency, crucible cover thickness, crucible cover size, crucible cover material
Determined etc. factor, such as 8.5mm, 10.4mm, 11mm, 12.6mm, 13.5mm, 14.2mm, etc..
Preferably, vortex load coil 21 can be fixed on sealing flange 24 by heating electrode 17.Heating electricity
Pole 17 can be connected on the outermost layer coil of vortex load coil 21, and heating electrode 17 can be two, 4 etc..
Further, the cross section of vortex load coil 21 is in hollow rectangular shape, to avoid or reduce annulus
The influence of effect and kelvin effect.
Vortex load coil 21 and refrigerating plant in crucible cover temperature-adjusting device can become one structure,
Such as refrigerating plant includes being connected to two pipe joint (not shown)s and the company at the both ends of vortex load coil 21
The cooling water pipe 20 of pipe joint is connected to, when the temperature at crucible bottom such as cylinder bottom 15 is too high, can be passed through to cooling water pipe 20 cold
But water is cooled down.The cooling water pipe 20 can be connected to the outermost layer coil of vortex load coil 21, this certain practicality
New to be not limited to this, the innermost layer coil or intermediate layer coil that cooling water pipe 20 is connected to vortex load coil 21 are
Feasible.
In some embodiments, SiC Crystal Growth Equipment also includes an attemperator being arranged in vacuum chamber
12, attemperator 12 can surround crucible body 9 and part crucible cover.Attemperator 12 can be graphite felt etc..Further
Ground, SiC Crystal Growth Equipment also includes a support member such as graphite support 35, and graphite support 35 is fixed on the bottom of attemperator 12
Center, makes attemperator 12 keep a spacing with the bottom of vacuum cavity 14.
In the utility model, crucible device can be arranged at vacuum chamber middle position, i.e., the two is coaxially arranged, further
Ground, attemperator 12, chamber heater, graphite support 35 are coaxially arranged with crucible device.
Referring to Fig. 6, Fig. 6 is the control principle drawing of control device in SiC Crystal Growth Equipment shown in Fig. 3.Such as Fig. 6
Shown, the utility model also includes that the control device of crystal plane temperature can be controlled, and it includes Temperature sampler and controller.Wherein
Temperature sampler is used for the temperature data for gathering crucible cover bottom such as cylinder bottom 15, and the temperature data is sent into controller.
In one embodiment, Temperature sampler uses infrared radiation thermometer 18, in such cases, it is necessary in sealing flange 24
Middle position thermometric interface 19 is set, crucible cover temperature-adjusting device is being provided with through hole 31 corresponding to the position of thermometric interface 19,
When crucible cover temperature-adjusting device uses vortex load coil 21, coil layer can be not provided with centre to reserve
Hollow space forms the through hole 31.So infrared radiation thermometer 18 can measure crucible cover bottom temp with hindering without any.
Certainly other kinds of Temperature sampler example can also be applied to the utility model.
Controller storage inside has a plurality of crystal back temperature curve changed with the growth thickness of crystal 23, and controller is used
The crucible cover bottom temp data sent in real-time reception Temperature sampler, and crucible cover temperature-adjusting device is controlled according to this, with
Crucible cover temperature is set to be consistent with crystal back temperature curve.In some embodiments, controller can use PID control
Device.
Referring to Fig. 3 and Fig. 2 is combined, the temperature of crystal plane 30 of crystal 23 is expressed as Ts, and carbonization silicon material 10 temperature is Tv, crystal
The temperature at the back side 28 is Tc, and Tv is heated by helical load coil 13 and had fixed value in the present embodiment.The knot of crystal
The Δ Tc of temperature difference corresponding diagram 2 between crystal face (front) 30 and the crystal back side 28, between crystal plane 30 and carbonization silicon material 10
The Δ Tv of temperature difference corresponding diagram 2.Fig. 2 is when describing PVT methods growth carborundum crystals by the hot-fluid Q=Qv+Qw+ of crystal plane
L, temperature difference Tc=Ts-Tc is formd in the crystal plane 30 of crystal and the crystal back side 28.The silicon material 10 that is carbonized and the temperature of crystal plane 30
Poor Δ Tv=Tv-Ts.Thus draw：Δ Tv=Tv- (Tc+ Δ Tc), thermal conduction study is provided, Δ Tc=Q*Rc, wherein, Rc is crystal
Thermal resistance.With the thickness increase of crystal, then Rc increases, are increased by Δ Tc, if to keep Δ Tv constant, are only reduced
Tc。
Wherein, crystal back temperature curve can be drawn by existing special SiC growth simulations software simulation, such as document
《SiC single crystal growth and its progress of Wafer Machining》(Jiang Shouzhen, semiconductor journal the 5th phase of volume 28) or document《Earthenware
Crucible in coil position to great diameter SiC monocrystal Influence of Temperature Field》(Wang Yingming, many of electronics manufacturing engineering the 6th phase of volume 32 etc.
The Virtual Reactor simulation softwards system that paper is previously mentioned and used is obtained.
It is the crystal back side that Virtual Reactor simulation softwards system is obtained referring to Fig. 5 and combination Fig. 2 and Fig. 4, Fig. 5
Temperature profile.As shown in figure 5, in the temperature TH=2610K (Kelvin) of helical load coil 13, carbonization silicon material 10
Under temperature TV=2600K, vacuum cavity pressure PAr=5mBar, seed crystal diameter d0=5cm operating mode, with crystal growth thickness
Increase, the crystal plane temperature Tc of crystal change curve, wherein curve 1, curve 2, curve 3 represent crystalline rate V=respectively
1mm/h (millimeter is per hour), V=2mm/h, during V=3mm/h Tc with crystal growth thickness changing rule.As can be seen here, one
Under fixed growth conditions, when the curve (such as curve 1) shown in Tc temperature following Fig. 3 is reduced, it may be such that Δ Tv is constant.
In use, helical load coil 13 is powered, vacuum chamber is heated, heat passes through heat transfer and heat radiation side
Carbonization silicon material 10 is heated to 2600 DEG C by formula through vacuum cavity 14, attemperator 12, crucible body 9, and be now carbonized 10 liters of silicon material
China, sublimation gases are transported at the back side 28 under the temperature difference effect at the upper surface 29 of carbonization silicon material 10 and the back side 28 of seed crystal 22,
And react again, condense, forming core is grown to carborundum (SiC) crystal 23, while the aufwuchsplate for forming crystal 23 is crystal plane 30.
The utility model is by making the temperature Tc at the back side 28 of crystal 23 by given curvilinear motion, you can so that carbonization silicon material 10 and crystal
The temperature difference Tv=Tv-Ts Tv- (Tc+ Δ Tc) of crystal plane 30 keep constant so that crystal 23 has stable crystallization
The speed of growth, can grow high-quality SiC crystalline solid.
The utility model is carried on the back by setting vortex load coil 21 in crucible cover, and by control device control crystal
Portion temperature Tc unanimously, can be achieved with crystal with crystal back temperature (equivalent to theory T c, as shown in Figure 5) ideally
Growth Baidu thickens, the increase of crystal heat transfer resistance, the Δ Tc increases between crystal back and crystal structure face, and crystal structure face
The purpose being held essentially constant with the poor Δ Tv of carbonization silicon material upper surface temperature.So as to realize stable rate of crystalline growth, growth
The high crystal of mass.
Although use the term of relativity in this specification, such as " on " " under " describes a component of icon for another
The relativeness of one component, but these terms are used in this specification merely for convenient, for example with reference to the accompanying drawings in example
Direction.Be appreciated that, if making it turn upside down the upset of the device of icon, describe " on " component will turn into
" under " component.When certain structure other structures " on " when, it is possible to refer to that certain structural integrity is formed in other structures, or
Refer to certain structure " direct " to be arranged in other structures, or refer to certain structure and be arranged on by another structure " indirect " in other structures.
Term " first ", " second " etc. are only used as mark, are not the quantity limitations to its object.
In the claims, term " one ", " one ", " " and " at least one " to represent to exist it is one or more will
Element/part/etc.；Term "comprising", " comprising " and " having " are to represent the open meaning being included and be
Refer to except the key element listed/part/also may be present in addition to waiting other key element/part/etc..
It should be appreciated that the utility model be not limited in its application to this specification proposition part detailed construction and
Arrangement.The utility model can have other embodiment, and can realize and perform in many ways.It is foregoing to become
Shape form and modification fall in the range of the utility model.It should be appreciated that this disclosure and this reality limited
Mentioned or all alternative groups of two or more obvious independent features with the new text and/or drawings that extend to
Close.All these different combinations constitute multiple alternative aspects of the present utility model.The embodiment of this specification is illustrated
Become known for realizing best mode of the present utility model, and those skilled in the art will be enable to utilize the utility model.
Claims (10)
1. a kind of SiC Crystal Growth Equipment, it is characterised in that including：
Vacuum chamber, including the vacuum cavity with open end and the sealing flange for being seal-installed on the open end；
Chamber heater, for giving vacuum chamber heating；
Crucible device, is arranged in the vacuum chamber, including crucible body and closure with top end opening are on the top
The crucible cover of end opening, the crucible body is used to contain carbonization silicon material, and the crucible cover bottom is provided with a seed crystal, the seed crystal energy
Grow into a crystal；
Crucible cover temperature-adjusting device, the temperature for adjusting the crucible cover；
Control device, including：
Temperature sampler, the temperature data for gathering the crucible cover bottom；
Controller, its storage inside has a plurality of with the crystal back temperature curve of crystal growth thickness change, the controller
For receiving the crucible cover bottom temp data that the Temperature sampler is sent, and the crucible cover temperature is controlled to adjust according to this
Regulating device, so that the crucible cover temperature is consistent with the crystal back temperature curve.
2. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the crucible cover is cylindrical in shape, with cylinder
Bottom and cylinder, the crucible cover temperature-adjusting device are arranged in the cylinder and the neighbouring or contact cylinder bottom.
3. SiC Crystal Growth Equipment as claimed in claim 2, it is characterised in that the thickness at the cylinder bottom of the crucible cover is
3mm-5mm。
4. SiC Crystal Growth Equipment as claimed in claim 2, it is characterised in that the cylinder has a cylinder bottom
End periphery is provided with annular groove, and the annular groove has side seals and end sealing, the medial surface of the crucible body and top
Corresponding matching is distinguished in the side seals and end sealing in face.
5. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the crucible cover temperature-adjusting device bag
Vortex load coil and refrigerating plant are included, the gap between the crucible cover temperature-adjusting device and the crucible cover is 8-
15mm。
6. SiC Crystal Growth Equipment as claimed in claim 5, it is characterised in that connect on the vortex load coil
Heating electrode is connect, and is fixed on by the heating electrode on the sealing flange.
7. SiC Crystal Growth Equipment as claimed in claim 5, it is characterised in that the horizontal stroke of the vortex load coil
Section is in hollow rectangular shape.
8. SiC Crystal Growth Equipment as claimed in claim 7, it is characterised in that the vortex load coil and institute
Refrigerating plant is stated to become one, the refrigerating plant include being connected to two of the vortex load coil both ends it is cold
But water pipe.
9. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that the Temperature sampler is infrared measurement of temperature
Instrument, the sealing flange is provided with thermometer hole, and the crucible cover temperature-adjusting device is provided with corresponding to the thermometric hole site
Through hole.
10. SiC Crystal Growth Equipment as claimed in claim 1, it is characterised in that also include：
Attemperator, is arranged in the vacuum chamber, and surrounds the crucible body and the part crucible cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621371228.2U CN206396359U (en) | 2016-12-14 | 2016-12-14 | SiC Crystal Growth Equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621371228.2U CN206396359U (en) | 2016-12-14 | 2016-12-14 | SiC Crystal Growth Equipment |
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| Publication Number | Publication Date |
|---|---|
| CN206396359U true CN206396359U (en) | 2017-08-11 |
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ID=59511570
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621371228.2U Active CN206396359U (en) | 2016-12-14 | 2016-12-14 | SiC Crystal Growth Equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394787A (en) * | 2020-03-25 | 2020-07-10 | 哈尔滨奥瑞德光电技术有限公司 | Thermal field structure for growing large-size silicon carbide single crystal by PVT method |
| CN112064110A (en) * | 2020-10-16 | 2020-12-11 | 璨隆科技发展有限公司 | Temperature control device for growth of silicon carbide crystal |
-
2016
- 2016-12-14 CN CN201621371228.2U patent/CN206396359U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394787A (en) * | 2020-03-25 | 2020-07-10 | 哈尔滨奥瑞德光电技术有限公司 | Thermal field structure for growing large-size silicon carbide single crystal by PVT method |
| CN112064110A (en) * | 2020-10-16 | 2020-12-11 | 璨隆科技发展有限公司 | Temperature control device for growth of silicon carbide crystal |
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