CN208517577U - A kind of semiconductor silicon single crystal furnace with concealed heater - Google Patents
A kind of semiconductor silicon single crystal furnace with concealed heater Download PDFInfo
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- CN208517577U CN208517577U CN201820949904.2U CN201820949904U CN208517577U CN 208517577 U CN208517577 U CN 208517577U CN 201820949904 U CN201820949904 U CN 201820949904U CN 208517577 U CN208517577 U CN 208517577U
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- bushing
- heater
- heat screen
- single crystal
- crucible
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Abstract
The utility model discloses a kind of semiconductor silicon single crystal furnace with concealed heater, heater, main heat screen including circular ring shape, the bottom heat screen positioned at main heat screen bottom, the graphite pot prop that is carried on the heat screen of bottom, crucible in graphite pot prop, further include the shielding bushing around the setting of graphite pot prop, shields and be equipped with upper plate between the upper end of bushing and the upper end of main heat screen, shields between the bottom end of bushing and the upper surface of bottom heat screen equipped with bushing substrate；Main heat screen, shielding bushing, upper plate and bushing substrate surround the insulating space of circular ring shape jointly, the heater is located in the insulating space of the circular ring shape to be isolated with the atmosphere that crucible is in, heater will not be by the gas attack in the atmosphere of crucible in actual use, it can be improved the service life of heater, and heater can remain under a stable heated condition, heating function will not be made to be affected because of being corroded, to be conducive to improve single crystal growing furnace production stability and crystal yield.
Description
Technical field
The utility model relates to monocrystal stove technical fields.
Background technique
Monocrystalline silicon is the crystal with basic complete lattice structure, is a kind of good semiconductor material, purity is reachable
To 99.9999999% or more, it can be used for diode grade, rectifying device grade, circuit-level and solar battery grade single crystal product article
Production and deep processing manufacture, subsequent product integrated circuit and semiconductor separation part are widely used to every field and are in
The forward position of new material development.
Semiconductor grade monocrystal stove is crystal growth equipment important in monocrystalline silicon industrial chain, currently, being used for silicon in the world
There are mainly two types of the main stream approach of single crystal growth: one is zone-melting process, another kind is vertical pulling method, and wherein vertical pulling method has growth
The advantages that monocrystalline quality is big, diameter is big, low in cost, high production efficiency is always the main means of bulk silicon substrate preparation.
In the single crystal growing furnace using vertical pulling method, seed crystal is immersed in the fused raw material in crucible, is added what heater generated
Under heat, seed crystal is lifted while rotating seed crystal and crucible, and grow crystalline silicon rod in seed crystal lower end.Before and after crystal pulling, crucible is carried out
Rotation and elevating movement.
A kind of single crystal growing furnace as disclosed in Chinese patent ZL 201310261116.6, including crucible, around the heating of crucible
Device.The position and space setting of this kind of crucible and heater represent common setting in the prior art, but the skill of this kind of scheme
Art problem is that in same atmosphere, which is silicon monoxide for heater and crucible, because the material of heater is graphite,
Graphite is reacted with silicon monoxide can generate silicon carbide, corrode heater, cause the service life of heater not high.
Summary of the invention
Goal of the invention: providing a kind of crucible shaft for single crystal furnace, is able to solve the skill for cooling down crucible axis when in use
Art problem.
In addition the utility model provides a kind of single crystal growing furnace comprising crucible axis, which can be cooling to crucible axis.
Technical solution: in order to achieve the above objectives, following technical solution can be used in the utility model crucible shaft for single crystal furnace:
A kind of semiconductor silicon single crystal furnace with concealed heater, heater including circular ring shape, are located at main heat screen
The bottom heat screen of main heat screen bottom, the graphite pot prop being carried on the heat screen of bottom, the crucible in graphite pot prop, the master
It is hollow cavity inside heat screen, further includes the shielding bushing around the setting of graphite pot prop, shielding bushing is located at main heat screen
It is internal；Shield be equipped between the upper end of bushing and the upper end of main heat screen upper plate, the bottom end and the bottom heat screen that shield bushing it is upper
Bushing substrate is equipped between surface；The main heat screen, shielding bushing, upper plate surround being isolated for circular ring shape with bushing substrate jointly
Space, the heater are located in the insulating space of the circular ring shape.
The utility model has the advantages that the heater is located in the insulating space of the circular ring shape, it is separated by with the atmosphere that crucible is in
From heater will not be by the gas attack in the atmosphere of crucible in actual use, and can be improved heater uses the longevity
Life, and heater can remain under a stable heated condition, will not make because of being corroded heating function by
It influences, to be conducive to improve single crystal growing furnace production stability and crystal yield.
Further, it is provided with circular opening in the bottom heat screen, is covered with circular ring shape on the inner sidewall of the opening
Bushing bottom tube, abut against bushing substrate on the upside of the bushing bottom tube.
Further, upper plate, shielding bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube material be stone
Ink.
Further, the material of main heat screen and bottom heat screen is solidification felt.
Further, the material of the crucible is quartz.
Detailed description of the invention
Fig. 1 is cross-sectional view of the utility model single crystal growing furnace in crucible and heater section.
Fig. 2 is the perspective view of heater in the utility model.
Specific embodiment
Incorporated by reference to shown in Fig. 1, a kind of semiconductor silicon single crystal furnace with concealed heater of the single crystal growing furnace, including circular ring shape
Heater 4, main heat screen 1, the bottom heat screen 9 positioned at main 1 bottom of heat screen, the graphite pot prop that is carried on bottom heat screen 9
5, the crucible 6 in graphite pot prop 5.It is hollow cavity inside the main heat screen 1, to accommodate other elements.In order to
So that heater 4 is isolated with space locating for crucible 6, further includes the shielding bushing being arranged around graphite pot prop 5 in the single crystal growing furnace
3, shielding bushing 3 is located inside main heat screen 1.It shields and is equipped with upper plate 2, screen between the upper end of bushing 3 and the upper end of main heat screen 1
It covers and is equipped with bushing substrate 7 between the bottom end of bushing 3 and the upper surface of bottom heat screen 9.The main heat screen 1, shielding bushing 3, on
Plate 2 and bushing substrate 7 surround the closed insulating space of circular ring shape jointly.The isolation that the heater 4 is located at the circular ring shape is empty
In, and as shown in Fig. 2, heater 4 includes that four legs 41 are supported on bottom heat screen 9.Heater institute link (is not schemed
Show) from the insulating space any position draw, pay attention to sealing in the case where will not influence the insulating space with
The isolation in 6 place space of crucible.In addition, being provided with circular opening in the bottom heat screen 9, pasted on the inner sidewall of the opening
There is the bushing bottom tube 8 of circular ring shape, the upside of the bushing bottom tube 8 abuts against bushing substrate 7 to position and fix bushing substrate 7.
The material of said elements selects are as follows: upper plate, shielding bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube
Material be graphite；The material of main heat screen and bottom heat screen is solidification felt；The material of the crucible is quartz.
The heater is located in the insulating space of the circular ring shape, is isolated with the atmosphere that crucible is in, in reality
Heater will not can be improved the service life of heater, and heat by the gas attack in the atmosphere of crucible when use
Device can remain under a stable heated condition, heating function will not be made to be affected because of being corroded, thus
Be conducive to improve single crystal growing furnace production stability and crystal yield.
In addition, there are many concrete methods of realizing and approach of the utility model, the above is only the preferred of the utility model
Embodiment.It should be pointed out that for those skilled in the art, before not departing from the utility model principle
It puts, several improvements and modifications can also be made, these improvements and modifications also should be regarded as the protection scope of the utility model.This reality
The available prior art of each component part being not known in example is applied to be realized.
Claims (5)
1. a kind of semiconductor silicon single crystal furnace with concealed heater, heater, main heat screen including circular ring shape are located at master
The bottom heat screen of heat screen bottom, the graphite pot prop being carried on the heat screen of bottom, the crucible in graphite pot prop, the master every
It is hollow cavity inside heat shielding, it is characterised in that: further include the shielding bushing around the setting of graphite pot prop, shielding bushing is located at
Inside main heat screen；Shield bushing upper end and main heat screen upper end between be equipped with upper plate, shield bushing bottom end and bottom every
Bushing substrate is equipped between the upper surface of heat shielding；The main heat screen, shielding bushing, upper plate and bushing substrate surround annulus jointly
The insulating space of shape, the heater are located in the insulating space of the circular ring shape.
2. the semiconductor silicon single crystal furnace according to claim 1 with concealed heater, it is characterised in that: the bottom every
Be provided with circular opening in heat shielding, be covered with the bushing bottom tube of circular ring shape on the inner sidewall of the opening, the bushing bottom tube it is upper
Side abuts against bushing substrate.
3. the semiconductor silicon single crystal furnace according to claim 2 with concealed heater, it is characterised in that: upper plate, screen
Cover bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube material be graphite.
4. the semiconductor silicon single crystal furnace according to claim 1 with concealed heater, it is characterised in that: main heat screen
Material with bottom heat screen is solidification felt.
5. the semiconductor silicon single crystal furnace according to claim 1 with concealed heater, it is characterised in that: the crucible
Material be quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820949904.2U CN208517577U (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal furnace with concealed heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820949904.2U CN208517577U (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal furnace with concealed heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208517577U true CN208517577U (en) | 2019-02-19 |
Family
ID=65325497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820949904.2U Active CN208517577U (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal furnace with concealed heater |
Country Status (1)
| Country | Link |
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| CN (1) | CN208517577U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108468083A (en) * | 2018-06-20 | 2018-08-31 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal stove with concealed heater |
-
2018
- 2018-06-20 CN CN201820949904.2U patent/CN208517577U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108468083A (en) * | 2018-06-20 | 2018-08-31 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal stove with concealed heater |
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