CN110512274A - A kind of device of the reduction GaAs crystal twin based on VGF method - Google Patents
A kind of device of the reduction GaAs crystal twin based on VGF method Download PDFInfo
- Publication number
- CN110512274A CN110512274A CN201910944066.9A CN201910944066A CN110512274A CN 110512274 A CN110512274 A CN 110512274A CN 201910944066 A CN201910944066 A CN 201910944066A CN 110512274 A CN110512274 A CN 110512274A
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- Prior art keywords
- quartz ampoule
- heat preservation
- gaas crystal
- vgf method
- attemperator
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- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000003708 ampul Substances 0.000 claims abstract description 42
- 238000004321 preservation Methods 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 12
- 239000010431 corundum Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052571 earthenware Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- -1 heater Substances 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to semiconductor preparation facilities technical fields, more specifically, it is related to a kind of device of reduction GaAs crystal twin based on VGF method, including PBN crucible, quartz ampoule, heater, quartz ampoule is placed on furnace core, it is provided with heat preservation support between quartz ampoule and furnace core, is provided with glass bar in furnace core；PBN crucible and quartz ampoule are arranged in attemperator, attemperator is the hollow cylindrical configuration of lower openings, attemperator inner wall inlays having heaters, realize that the heat radiation to furnace core and crucible furnace, quartz ampoule is heated by multiple groups heater, multiple groups heater independent work realizes the heating of different parts different temperatures；Heat loss channel is provided by bottom glass stick；It is provided with heat preservation support between quartz ampoule and crucible, stops the heat dissipation of quartz supports pipe, is homogenized thermal field, thermal field is avoided to be inverted, easily grows qualified monocrystalline, twin rate drops to 20%, improves growing efficiency, increases economic efficiency.
Description
Technical field
The present invention relates to semiconductor preparation facilities technical fields, more specifically, are related to a kind of reduction based on VGF method
The device of GaAs crystal twin.
Background technique
GaAs (GaAs) belongs to group Ⅲ-Ⅴ compound semiconductor, is formed by two kinds of element compounds of arsenic and gallium, and appearance is in bright
Grey, tool metallic luster, property are crisp and hard, are the present age internationally recognized most mature second generation compound semiconductor materials, have height
Advantageous characteristics, the GaAs materials such as frequency, high electron mobility, high-output power, low noise and the linearity be good are current
Output is maximum, most widely used, thus is also most important compound semiconductor materials, is be only second to silicon most important half
Conductor material.Due to its superior performance and band structure, make GaAs material microwave device and in terms of have
Grow a lot potentiality.The advanced production technology of preceding GaAs material still rests in the international grand duke such as Japan, Germany and U.S.
It takes charge of in hand, there are also larger gaps in terms of GaAs material production technology for domestic enterprise compared with offshore company.
Arsenide gallium monocrystal industrialization growth technique specifically include that liquid encapsulate Czochralski technique (LEC), horizontal Bu Liqimanfa (HB),
Vertical Bu Liqimanfa (VB) and vertical gradient solidification (VGF) etc., vertical gradient solidification are the containers that material will be housed
It is vertically arranged in the relevant temperature gradient position set in furnace, after material fine melt, is slowly crystallized from lower end thereof and be extended to top
The growing method of one end has equipment manufacturing cost low, process control easy to accomplish, and the monocrystalline of growth has lower dislocation close
Many advantages, the growing environment of VGF growth furnace such as degree and higher integrality, uniformity are at room temperature environment.
The crystal of existing VGF method growth, holds boron nitride crucible using quartz ampoule, is placed on quartz supports pipe.Because of stone
English support tube is directly contacted with quartz ampoule, and quartzy light transmittance is higher, cause that quartz ampoule contacts with support tube it is local it is thermally conductive compared with
Greatly, it easily causes thermal field to be inverted, crystal is made to grow up to twin.
Summary of the invention
In the presence of overcoming the shortcomings of the prior art, the present invention provides a kind of reduction GaAs crystal based on VGF method
The device of twin reduces GaAs crystal twin growth.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is as follows:
A kind of device of the reduction GaAs crystal twin based on VGF method, including PBN crucible, quartz ampoule, heater, the PBN earthenware
Crucible is arranged in quartz ampoule, and the quartz ampoule top is provided with quartz cap, and quartz ampoule is placed on furnace core, the quartz ampoule and furnace
Heat preservation support is provided between core, furnace core offers in quartz ampoule quartz mouth corresponding position and sets up hole, sets up hole lower part and is provided with
Glass bar；The PBN crucible and quartz ampoule are arranged in attemperator, and the attemperator is the hollow tube-shape knot of lower openings
Structure, the attemperator inner wall inlay having heaters.
Further, the heat preservation support is the reversed round bench shaped of top and bottom opening.
Further, the heat preservation support uses corundum material.
Further, the heat preservation supporting bus and central axis angle and quartz ampoule cone angle are adapted.
Further, the heat preservation support bottom surface interior diameter is greater than quartz ampoule seed crystal area diameter, and heat preservation supports straight outside bottom surface
Diameter, which is greater than, sets up bore dia；Heat preservation support top surface interior diameter is greater than quartz ampoule pipe diameter, and heat preservation support top surface overall diameter is less than
Attemperator internal diameter.
Further, it is set as 4-10 group from top to bottom.
Further, the heater independently operates.
Compared with prior art, the advantageous effect of present invention is that:
The device for the reduction GaAs crystal twin that the present invention provides a kind of based on VGF method, is realized by multiple groups heater to furnace
The heat radiation heating of core and crucible furnace, quartz ampoule, multiple groups heater independent work realize the heating of different parts different temperatures；
Heat loss channel is provided by bottom glass stick；It is provided with heat preservation support between quartz ampoule and crucible, stops quartz supports pipe
Heat dissipation is homogenized thermal field, thermal field is avoided to be inverted, and easily grows qualified monocrystalline, and twin rate drops to 20%, improves growing efficiency,
It increases economic efficiency.
Detailed description of the invention
Fig. 1 is a kind of schematic device of reduction GaAs crystal twin based on VGF method provided by the invention；
Fig. 2 is that heat preservation supporting section diagram is intended to；
In figure: 1 being PBN crucible, 2 be quartz ampoule, 3 be heater, 4 be quartz cap, 5 be furnace core, 6 be heat preservation support, 7 be glass
Stick, 8 are attemperator.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, it is a kind of based on VGF method reduction GaAs crystal twin device, including PBN crucible 1, quartz ampoule 2,
Heater 3, the PBN crucible 1 are arranged in quartz ampoule 2, and 2 top of quartz ampoule is provided with quartz cap 4, and quartz ampoule 2 is placed
On furnace core 5, heat preservation support 6 is provided between the quartz ampoule 2 and furnace core 5, furnace core 5 is in the quartzy mouth of quartz ampoule 2 corresponding position
It offers and sets up hole, set up hole lower part and be provided with glass bar 7；The PBN crucible 1 is arranged in attemperator 8 with quartz ampoule 2,
The attemperator 8 is the hollow cylindrical configuration of lower openings, and 8 inner wall of attemperator inlays having heaters 3.
As shown in Fig. 2, in the present embodiment, the reversed round bench shaped that the heat preservation support 6 is open for top and bottom.It is described
Heat preservation support 6 uses corundum material.The heat preservation supports 6 buses and central axis angle and 2 cone angle of quartz ampoule to be adapted.The guarantor
Temperature 6 bottom surface interior diameters of support are greater than 2 seed crystal area diameter of quartz ampoule, and heat preservation 6 bottom surface overall diameters of support, which are greater than, sets up bore dia；Heat preservation
6 top surface interior diameters are supported to be greater than 2 pipe diameter of quartz ampoule, heat preservation 6 top surface overall diameters of support are less than 8 internal diameter of attemperator.
In the present embodiment, the heater 3 is set as 4-10 group from top to bottom.The heater 3 independently operates.
Comparative example: existing VGF method GaAs growth furnace is used, using the boron nitride crucible of internal diameter 100mm, weight of loading is
7000g, boron oxide weight are 50g, and growth time is 10 days, grow 10 furnaces.After crystal is come out of the stove, with sand paper polishing surface, naked eyes
Observe crystal twin growth situation.The results show that having 4 crystal growths is twin, growth fails, and accounting reaches 40%.
Embodiment: existing VGF method GaAs growth furnace is used, using the boron nitride crucible of internal diameter 100mm, weight of loading is
7000g, boron oxide weight are 50g, are added and reduce twin device, and growth time is 10 days, grow 10 furnaces.After crystal is come out of the stove, use
Sand paper polishing surface, naked-eye observation crystal twin growth situation.The results show that having 2 crystal growths is twin, growth fails,
Accounting reaches 20%.
A kind of device of reduction GaAs crystal twin based on VGF method provided by the invention is used for GaAs crystal growth, subtracts
The appearance of Twin Defects is lacked.
Only presently preferred embodiments of the present invention is explained in detail above, but the present invention is not limited to above-described embodiment,
Within the knowledge of a person skilled in the art, it can also make without departing from the purpose of the present invention each
Kind variation, various change should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of device of the reduction GaAs crystal twin based on VGF method, it is characterised in that: including PBN crucible (1), quartz ampoule
(2), heater (3), in quartz ampoule (2), quartz ampoule (2) top is provided with quartz cap for PBN crucible (1) setting
(4), quartz ampoule (2) is placed on furnace core (5), and heat preservation support (6), furnace core are provided between the quartz ampoule (2) and furnace core (5)
(5) it is offered in quartz ampoule (2) quartzy mouth corresponding position and sets up hole, set up hole lower part and be provided with glass bar (7)；The PBN earthenware
Crucible (1) and quartz ampoule (2) are arranged in attemperator (8), and the attemperator (8) is the hollow cylindrical configuration of lower openings,
Attemperator (8) inner wall inlays having heaters (3).
2. a kind of device of reduction GaAs crystal twin based on VGF method according to claim 1, it is characterised in that: institute
State the reversed round bench shaped that heat preservation support (6) is top and bottom opening.
3. a kind of device of reduction GaAs crystal twin based on VGF method according to claims 1 and 2, it is characterised in that:
The heat preservation support (6) uses corundum material.
4. a kind of device of reduction GaAs crystal twin based on VGF method according to claim 2, it is characterised in that: institute
It states heat preservation support (6) bus and central axis angle and quartz ampoule (2) cone angle is adapted.
5. a kind of device of reduction GaAs crystal twin based on VGF method according to claim 2, it is characterised in that: institute
It states heat preservation support (6) bottom surface interior diameter and is greater than quartz ampoule (2) seed crystal area diameter, heat preservation support (6) bottom surface overall diameter, which is greater than, to be set up
Bore dia；Heat preservation support (6) top surface interior diameter is greater than quartz ampoule (2) pipe diameter, and heat preservation support (6) top surface overall diameter, which is less than, to be protected
Warm device (8) internal diameter.
6. a kind of device of reduction GaAs crystal twin based on VGF method according to claim 1, it is characterised in that: institute
It states heater (3) and is set as 4-10 group from top to bottom.
7. a kind of device of reduction GaAs crystal twin based on VGF method according to claim 6, it is characterised in that: institute
Heater (3) is stated independently to operate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944066.9A CN110512274A (en) | 2019-09-30 | 2019-09-30 | A kind of device of the reduction GaAs crystal twin based on VGF method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944066.9A CN110512274A (en) | 2019-09-30 | 2019-09-30 | A kind of device of the reduction GaAs crystal twin based on VGF method |
Publications (1)
| Publication Number | Publication Date |
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| CN110512274A true CN110512274A (en) | 2019-11-29 |
Family
ID=68634200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201910944066.9A Pending CN110512274A (en) | 2019-09-30 | 2019-09-30 | A kind of device of the reduction GaAs crystal twin based on VGF method |
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| CN (1) | CN110512274A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111893571A (en) * | 2020-08-06 | 2020-11-06 | 山西中科晶电信息材料有限公司 | Gallium arsenide-doped monocrystal growth process |
| CN117568915A (en) * | 2023-10-20 | 2024-02-20 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Controllable indium phosphide monocrystal growth device and growth method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865527A (en) * | 2006-04-21 | 2006-11-22 | 罗建国 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
| JP2009149452A (en) * | 2007-12-18 | 2009-07-09 | Hitachi Cable Ltd | Method for growing semiconductor crystal |
| JP2010260747A (en) * | 2009-04-30 | 2010-11-18 | Hitachi Cable Ltd | Method for producing semiconductor crystal |
| JP2012144411A (en) * | 2011-01-14 | 2012-08-02 | Sumitomo Electric Ind Ltd | Method for producing semiconductor crystal |
| CN103789835A (en) * | 2014-03-04 | 2014-05-14 | 昆山鼎晶镓业晶体材料有限公司 | Improved gradient freeze GaAs single crystal growing method |
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
| CN108060454A (en) * | 2017-12-15 | 2018-05-22 | 广东先导先进材料股份有限公司 | A kind of VGF methods prepare the device and method of gallium arsenide |
| CN207512313U (en) * | 2017-11-30 | 2018-06-19 | 广东天鼎思科新材料有限公司 | A kind of indium phosphide single crystal controlled growth device |
| CN108624948A (en) * | 2018-03-30 | 2018-10-09 | 广东先导先进材料股份有限公司 | The grower and growing method of arsenide gallium monocrystal |
| CN210711818U (en) * | 2019-09-30 | 2020-06-09 | 山西中科晶电信息材料有限公司 | Device for reducing GaAs crystal twin crystal based on VGF method |
-
2019
- 2019-09-30 CN CN201910944066.9A patent/CN110512274A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865527A (en) * | 2006-04-21 | 2006-11-22 | 罗建国 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
| JP2009149452A (en) * | 2007-12-18 | 2009-07-09 | Hitachi Cable Ltd | Method for growing semiconductor crystal |
| JP2010260747A (en) * | 2009-04-30 | 2010-11-18 | Hitachi Cable Ltd | Method for producing semiconductor crystal |
| JP2012144411A (en) * | 2011-01-14 | 2012-08-02 | Sumitomo Electric Ind Ltd | Method for producing semiconductor crystal |
| CN103789835A (en) * | 2014-03-04 | 2014-05-14 | 昆山鼎晶镓业晶体材料有限公司 | Improved gradient freeze GaAs single crystal growing method |
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
| CN207512313U (en) * | 2017-11-30 | 2018-06-19 | 广东天鼎思科新材料有限公司 | A kind of indium phosphide single crystal controlled growth device |
| CN108060454A (en) * | 2017-12-15 | 2018-05-22 | 广东先导先进材料股份有限公司 | A kind of VGF methods prepare the device and method of gallium arsenide |
| CN108624948A (en) * | 2018-03-30 | 2018-10-09 | 广东先导先进材料股份有限公司 | The grower and growing method of arsenide gallium monocrystal |
| CN210711818U (en) * | 2019-09-30 | 2020-06-09 | 山西中科晶电信息材料有限公司 | Device for reducing GaAs crystal twin crystal based on VGF method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111893571A (en) * | 2020-08-06 | 2020-11-06 | 山西中科晶电信息材料有限公司 | Gallium arsenide-doped monocrystal growth process |
| CN117568915A (en) * | 2023-10-20 | 2024-02-20 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Controllable indium phosphide monocrystal growth device and growth method |
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