CN100357498C - Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace - Google Patents
Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace Download PDFInfo
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- CN100357498C CN100357498C CNB2006100238034A CN200610023803A CN100357498C CN 100357498 C CN100357498 C CN 100357498C CN B2006100238034 A CNB2006100238034 A CN B2006100238034A CN 200610023803 A CN200610023803 A CN 200610023803A CN 100357498 C CN100357498 C CN 100357498C
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Abstract
The present invention relates to a method for growing gallium arsenide single crystals by a gradient solidification method in horizontal three-temperature zones, which belongs to the technical field of the growth of gallium arsenide single crystals. The present invention is characterized in that a furnace body used for growing single crystals does not carry out translation; the temperature of a high temperature zone T1 of a temperature field goes down step by step according to the temperature of forming points of the single crystals; the rate of descent corresponds with the growth rate of the single crystals. The growth quality of the single crystals is ensured; besides, complicated mechanical transmission devices are also omitted. The present invention has the advantages of low energy consumption, technology simplification and cost reduction. The present invention has prospects.
Description
Technical field:
Belonging to arsenide gallium monocrystal growing technology field, exactly is a kind of technology with freezing method growth arsenide gallium monocrystal.
Background technology:
Its superior performance of GaAs material has the luminous multifrequency natures such as light that are subjected to, and its purposes is varied.Be mainly used in (opto-electronic device (as LED IRED LD solar cell etc.) and microelectronic device (various microwave diode FET HEMTHBT MMICK etc.).Will realize the combined photoelectron of opto-electronic device and microelectronic device integrated (OEIG).GaAs material is up-and-coming compound semiconductor materials.
One of conventional growth method of arsenide gallium monocrystal is horizontal method.Horizontal method be with gallium and arsenic vacuum-sealing in quartz container, put into the thermal field growing single-crystal of horizontal stove.Horizontal method is the main method of producing arsenide gallium monocrystal.Horizontal method growth arsenide gallium monocrystal typical method has: two warm area bridgman methods (2T-HB), three-temperature-zone bridgman method (3T-HB) and gradient freeze method (GF).Its relative merits are respectively arranged.
In the 2T-HB method, funtcional relationship in temperature and position shows among the single crystal growth process figure, two all near horizontal collinear temperature fields, what keep left the position, limit is high temperature T1 district, the T1 temperature remains on more than the gallium-arsenide melting point, the right is low temperature T3 district, and the temperature of T3 is the vapour pressure that is used for controlling arsenic, to keep GaAs melt decomposition pressure balance.Have thermograde between T1 and T3, move when whole body of heater is driven from right to left by mechanical drive, GaAs melt is along the slowly crystallization of solid gallium arsenide seed crystal, thereby grows into monocrystalline.This method shortcoming is more, as the complicated mechanical transmission mechanism will be arranged, can occur silicon in the single crystal growth process and pollute, and has not adopted substantially so the single-crystal fault of growth is many.
The 3T-HB method is to develop on the basis of 2T-HB method, and it is to increase a T2 district between T3 district, T1 district, is called middle warm area, and the existence in T2 district has prevented the reaction of gallium and quartz boat; Promptly prevent and reduced in the arsenide gallium monocrystal process of growth silicon and polluted; Avoided the profit of being stained with of gallium arsenide ingot and quartz boat simultaneously; Reduce stove solid-liquid interface place thermograde, thereby reduced the single crystal growing defective; The monocrystalline that grows out rests on the T2 district for a long time, has played Effect of annealing, improves the monocrystalline performance.In a word, the existence in T2 district has improved the monocrystalline crystal forming rate, has improved quality product.But this method is to support crystal reaction tube with SiC, whole stove moves from right to left along the SiC pipe, the heating source of stove must see through SiC and be radiated crystal reaction tube, because the internal diameter of stove is twice than the external diameter of crystal reaction tube, when growth ф 50 or bigger crystal, its growth interface is very undesirable, for the shape of control growing interface preferably, (between the T2 district, T1 district) increases by one four subregion stove section at its position, in order to regulate temperature up and down, to reach ideal growth interface.In order to improve crystal forming rate, on the technology single stage method is changed into two step method, promptly synthetic and growing single-crystal carries out in two steps.Therefore the shortcoming of this method is: accurate transmission mechanism and temperature-control device; The setting of four subregion stove sections is more complicated also; And the power of stove is big; Need expensive SiC pipe; Increased operation on the technology.So this method complex process, facility investment is big, the production cost height.The GF method, the similar two warm area methods of this method, and the T1 district is very different, and the distribution in T1 district is oblique, temperature is between 1238 °～1260 ℃.Body of heater does not move.The process of growing single-crystal is that T1 lowers the temperature gradually, makes that the T1 district is parallel to move down, and below afterbody to 1238 ℃, melt all solidifies finishes process of growth.The characteristics of this method do not need transmission mechanism; Do not need the SiC pipe; The stove diameter is little, and the heating source direct radiation is to crystal reaction tube, and stove seals, temperature-stable, so the power of stove is little.The shortcoming of this method is the temperature height in T1 district, and silica tube is easily softening; There is not the setting in T2 district; The monocrystalline of growth is shorter.
As seen traditional horizontal method growing single-crystal will have the device that allows stove move, complex structure, cost height in the temperature field; Perhaps high-temperature zone whole temperature field temperature is descended and form monocrystalline, but it is undesirable to generate monocrystalline.
Summary of the invention:
The invention provides a kind of body of heater that allows and do not move, by the temperature field T1 that furnace temperature constitutes, press the temperature required and generating rate of crystalline growth, the temperature that descends piecemeal satisfies the grow method of arsenide gallium monocrystal of the temperature required a kind of horizontal three-temperature-zone gradient freeze method of crystallization.
The technical scheme that the present invention takes:
Be built-in with the quartz boat of gallium and arsenic, be placed in the tubular type quartz container of sealing, place the temperature field of horizontal stove, horizontal stove is on the shelf at a may command angle of inclination, in the prior art mechanical drive that makes body of heater translation in the temperature field to be arranged, this programme is not wanted the translation mechanical drive, i.e. not translation of body of heater; High-temperature zone, temperature field T1 temperature becomes the temperature of form point to descend piecemeal by monocrystalline, and fall off rate and single crystal growth rate match;
And operation according to the following steps
1) be equipped with the crystal reaction tube of gallium and arsenic, predetermined position in the stove of packing into,
2) operation heats up and synthesis program,
3) temperature rise rate is 5～10 ℃/minute: when each temperature section rises to the T1 district is that 1240 ℃, T2 district are that 1120 ℃, T3 district are 615 ℃, keeps 40 minutes galliums and arsenic generated time.
4) liquid level of the inclination device control GaAs melt of usefulness body of heater joins GaAs melt and seed crystal.
5) treat that T1 is that 1250 ℃, T2 are that 1220 ℃, T3 are that 800 ℃ (also available 1100 ℃ time) heat up and synthesis phase finishes.
6) enter the single crystal growing stage, each section temperature in operation T1 district, the temperature field descends mobile piecemeal, since the 10th section, press successively the 9th section, the 8th section ... the 2nd section, the 1st section order, the temperature T 2 of warm area from the temperature T 1 of high-temperature zone is reduced to; Cooling pitch time and single crystal growing time coincide; Rate of temperature fall is 0.1～1 ℃/minute;
7) when the 1st section temperature of T1 drops to 1220 ℃, the growing single-crystal stage finishes;
8) enter temperature-fall period at last, the operation cooling process is pressed 0.1～1 ℃ of speed cooling of per minute;
Positively effect behind enforcement the present invention is:
Because of high-temperature zone T1 adopts the multi-segment structure type of heating, keep same temperature, follow procedure control is cooling gradually piecemeal, descends with the temperature field temperature and moves and growing single-crystal, and long monocrystalline enables to grow; Warm area T2 between high temperature T1 low temperature T3, being provided with, the setting in T2 district can be lacked, because of T2 district in the program operation process increases gradually, brought into play middle warm area effect, stoped the pollution reaction and the wetting reaction of gallium and quartz boat, reduced the thermograde of solid-liquid interface, high-purity monocrystalline is used for growing;
The present invention does not need mechanical drive, does not need the SiC supporting tube yet, and the required temperature of growing single-crystal whole process is all finished by computer program control operation.Adopt growing single-crystal of the present invention, can reduce by 50% investment in fixed assets.And level of automation is very high.
The internal diameter of the used stove of the present invention is compared with the 3T-HB method can reduce 30%, and its power consumption is compared and reduced 60%.The present invention adopts synthetic and growing single-crystal is once finished, and has therefore simplified operation, saves material, and electric power and artificial can reduce monocrystalline production cost 10～12%.
The present invention mainly adopts scheme synthetic and the growing single-crystal single stage method.Also can be used to synthetic high-purity gallium arsenide polycrystal, for 2MT-HB VGF VB etc. provides high-purity gallium arsenide polycrystal.Also available polycrystalline is the raw material growing single-crystal.The present invention has temperature regulating device, temperature control furnace and the XX type computer program control device of special manufacturing to match, its intensification, synthetic, single crystal growing, the full follow procedure control of temperature-fall period, not only level of automation is very high, and safety factor is very high, almost reaches 99.99% safety.
Description of drawings:
Fig. 1 is horizontal three-temperature-zone gradient freeze method (3T-HGF) synoptic diagram
Fig. 2 temperature control furnace structural profile synoptic diagram
Fig. 3 horizontal three-temperature-zone gradient temperature distribution schematic diagram
Embodiment: existing the invention will be further described in conjunction with the accompanying drawings
The quartz boat that is built-in with gallium and arsenic is placed in the tubular type quartz container of sealing, places the temperature field of horizontal stove, and horizontal stove is on the shelf at a may command angle of inclination.This body of heater is without translation; High-temperature zone, temperature field T1 temperature becomes the temperature of form point to descend piecemeal by monocrystalline, and fall off rate and single crystal growth rate match; And operation according to the following steps
1) be equipped with the crystal reaction tube of gallium and arsenic, predetermined position in the stove of packing into,
2) operation heats up and synthesis program,
3) temperature rise rate is 5～10 ℃/minute; When each temperature section rises to the T1 district is that 1240 ℃, T2 district are that 1120 ℃, T3 district are 615 ℃, keeps 40 minutes galliums and arsenic generated time;
4) liquid level of the inclination device control GaAs melt of usefulness body of heater joins GaAs melt and seed crystal.
5) when temperature rise be that 1250 ℃, T2 are that 1220 ℃, T3 are that 800 ℃ of intensifications and synthesis phase finish to T1.
6) enter the single crystal growing stage, each section temperature in operation T1 district, the temperature field descends mobile piecemeal, since the 10th section, press successively the 9th section, the 8th section ... the 2nd section, the 1st section order, the temperature T 2 of warm area from the temperature T 1 of high-temperature zone is reduced to; Cooling pitch time and single crystal growing time coincide; Rate of temperature fall is 0.1～1 ℃/minute;
7) when the 1st section temperature to 1220 of T1 ℃, the growing single-crystal stage finishes;
8) enter temperature-fall period at last, the operation cooling process is pressed per minute.
Space, furnace chamber temperature distribution field is divided into high temperature T1 district, middle temperature T2 district, low temperature T3 district; High temperature T1 district forms by continuous 10 sections, distributes from right to left, and be respectively the 10th section, the 9th section, the 8th section .... the 2nd section, the 1st section; 11 sections is middle warm area; The 12nd section is cold zone; Every section all is subjected to computer-controlled independent process furnace silk with every district, and independent temperature is measured and feedback control system separately; Be equipped with the quartz boat of arsenic and gallium, be placed on high temperature section, it is terminal that the crystallization end is in the high temperature T1 district that has a common boundary with middle warm area;
Temperature controlling stove is the sealing rectangular parallelepiped 1 ' of a square cross section, constitute furnace lining by ultralight high temperature oxidation aluminium heat insulation material 2 ' and low-temperature oxidation aluminium heat insulation material 14 ' respectively, by different temperature rise requirements, adopt the Fe-Cr-Al heat silk of different size, be wrapped in independently respectively constitute the temperature field from the 1st section in the 12nd section spacing frame; Be provided with the vision slit 9 ' of seed crystal near the T2 position at the T1 end; Crystal reaction tube 6 ' is placed on the pad 4 ' in the furnace chamber, and the GaAs melt 8 ' quartz boat 7 ' in is in the T1 space, high-temperature zone of being twined by High Temperature Furnaces Heating Apparatus pipe furnace silk 3 ', and seed crystal end 10 ' is in the 10th section of the high-temperature zone T1 of approaching middle warm area; Arsenic 12 ' is in the 12nd section space of cold zone of being twined by low temperature oven pipe furnace silk 13 ', and quartzy envelope bubble 5 ' and group neck envelope bubble 11 ' are set in the reaction tubes; And draw from cavity by temperature sensor 15 '.
Embodiment
Example one: non-high-purity GaAs single crystal growing, quartz boat inside dimension D51 * 31 * 300 (wide * dark * long), 6N gallium 946g, the 6N arsenic 1037g of mixing.High-purity GaAs seed crystal 8g.Get non-high-purity GaAs monocrystalline 2.01kg that mixes.Light at the bottom of the crystal ingot table has no the profit of being stained with.Test result, carrier concentration 1.1 * 10
15～2.6 * 10
15/ cm
3, mobility 5200～5860cm
2/ v.s dislocation desity 8500/cm
2
Example two: low-mix Si-GaAs single crystal growing, quartz boat inside dimension D51 * 31 * 450 (wide * dark * long), 6N gallium 1542.4g, 6N arsenic 1657.6g.Doping agent Si 48mg.Mix Si-GaAs seed crystal 8g.Must mix Si-GaAs monocrystalline 3208g.Light at the bottom of the crystal ingot table has no the profit of being stained with.Test result, carrier concentration 2.2～8.1 * 10
17/ cm
3, mobility 2700～3600cm
2/ v.s dislocation desity 6500/cm
2
Example three: in mix the Si-GaAs single crystal growing, quartz boat inside dimension D51 * 31 * 400 (wide * dark * long), 6N gallium 1346.8g, 6N arsenic 1448.8g.Doping agent Si92mg.Mix Si-GaAs seed crystal 8g.Must mix Si-GaAs monocrystalline 2793g.Light at the bottom of the crystal ingot table has no the profit of being stained with.Test result, carrier concentration 5.3 * 10
17～2.2 * 10
18/ cm, mobility 1800～2780cm
2/ v.s dislocation desity 5200/cm
2
Example four: height is mixed the Si-GaAs single crystal growing, quartz boat inside dimension D51 * 31 * 400 (wide * dark * long).Mix Si-GaAs polycrystalline 2808g.Doping agent Si196mg.Mix Si-GaAs seed crystal 8g.Must mix Si-GaAs monocrystalline 2816g.Light at the bottom of the crystal ingot table has no the profit of being stained with.Test result, carrier concentration 9.6 * 10
17～3.8 * 10
18/ cm, mobility 1680～2500cm
2/ v.s dislocation desity 600～2000/cm
2
Claims (2)
1. the method for horizontal three-temperature-zone gradient freeze method growth arsenide gallium monocrystal, comprise in the tubular type quartz container that the quartz boat that is built-in with gallium and arsenic is placed on sealing, place the temperature field of horizontal stove, horizontal stove is on the shelf at a may command angle of inclination, the mechanical drive that makes body of heater translation in the temperature field is arranged, it is characterized in that:
Not translation of body of heater; High-temperature zone, temperature field (T1) temperature becomes the temperature of form point to descend piecemeal by monocrystalline, and fall off rate and single crystal growth rate match;
And operation according to the following steps:
1) be equipped with the crystal reaction tube of gallium and arsenic, predetermined position in the stove of packing into,
2) operation heats up and synthesis program,
3) temperature rise rate is 5～10 ℃/minute; When each temperature section rises to (T1) district is that 1240 ℃, (T2) district are that 1120 ℃, (T3) district are 615 ℃, keeps 40 minutes galliums and arsenic generated time;
4) liquid level of the inclination device control GaAs melt of usefulness body of heater joins GaAs melt and seed crystal;
5) when temperature rise be that 1250 ℃, (T2) are that 1220 ℃, (T3) are 800 ℃ to (T1), heat up and synthesis phase finishes;
6) enter the single crystal growing stage, each section temperature in operation (T1) district, the temperature field descends mobile piecemeal, since (10) section, successively by (9) section, (8) section ... (2) section, (1) section order, the temperature (T2) of warm area from the temperature (T1) of high-temperature zone is reduced to; Cooling pitch time and single crystal growing time coincide; Rate of temperature fall is 0.1～1 ℃/minute;
7) when (1) section temperature of (T1) drops to 1220 ℃, the growing single-crystal stage finishes;
8) enter temperature-fall period at last, the operation cooling process is 0.1～1 ℃ of cooling by the per minute rate of temperature fall.
2. the method for horizontal three-temperature-zone gradient freeze method growth arsenide gallium monocrystal according to claim 1 is characterized in that:
Described (T3) is 800 ℃ also can be 1100 ℃.
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| CN105154978B (en) * | 2015-10-14 | 2017-12-15 | 云南鑫耀半导体材料有限公司 | Gallium arsenide polycrystal magnetic field growth furnace and growing method |
| CN106480494B (en) * | 2016-10-13 | 2018-09-25 | 中国工程物理研究院化工材料研究所 | The necking down device and necking method of the seed crystal of crystal growth are condensed for horizontal gradient |
| CN106637413A (en) * | 2016-12-30 | 2017-05-10 | 有研光电新材料有限责任公司 | Method for reducing head dislocation density of HB gallium arsenide monocrystal |
| CN107955971B (en) * | 2017-12-27 | 2020-07-21 | 有研光电新材料有限责任公司 | Shouldering method in process of drawing gallium arsenide monocrystal by horizontal method |
| CN108546986B (en) * | 2018-04-19 | 2020-09-15 | 中国科学院半导体研究所 | Seed crystal protection device and single crystal growth method |
| CN108531975A (en) * | 2018-06-29 | 2018-09-14 | 汉能新材料科技有限公司 | A kind of semiconductor synthesizer and synthetic method |
| CN109161970B (en) * | 2018-10-11 | 2021-04-06 | 哈尔滨工业大学 | Visible three-temperature-zone gallium selenide single crystal growth device and growth method |
| CN110144623A (en) * | 2019-06-20 | 2019-08-20 | 广东先导先进材料股份有限公司 | A kind of production method and device of gallium arsenide polycrystal |
| CN110257914A (en) * | 2019-07-23 | 2019-09-20 | 广东先导先进材料股份有限公司 | A kind of gallium arsenide polycrystal synthesizer and synthetic method |
| CN114808106B (en) * | 2022-03-02 | 2023-08-11 | 北京通美晶体技术股份有限公司 | GaAs single crystal growth process |
| CN114717659A (en) | 2022-04-18 | 2022-07-08 | 山西中科晶电信息材料有限公司 | Gallium arsenide monocrystal and preparation method thereof |
| CN114908422A (en) * | 2022-06-29 | 2022-08-16 | 合肥工业大学 | Strontium-doped lanthanum hexaboride single crystal and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2344592A1 (en) * | 1973-09-04 | 1975-03-13 | Monsanto Co | Single crystal growth - keeping seed apart from the melt during compound melt formation |
| GB1600224A (en) * | 1978-05-09 | 1981-10-14 | Standard Telephones Cables Ltd | Bulk semiconductor processing |
| JPS5938185B2 (en) * | 1980-01-17 | 1984-09-14 | 住友電気工業株式会社 | Gallium arsenide single crystal manufacturing method and device |
-
2006
- 2006-02-09 CN CNB2006100238034A patent/CN100357498C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2344592A1 (en) * | 1973-09-04 | 1975-03-13 | Monsanto Co | Single crystal growth - keeping seed apart from the melt during compound melt formation |
| GB1600224A (en) * | 1978-05-09 | 1981-10-14 | Standard Telephones Cables Ltd | Bulk semiconductor processing |
| JPS5938185B2 (en) * | 1980-01-17 | 1984-09-14 | 住友電気工業株式会社 | Gallium arsenide single crystal manufacturing method and device |
Non-Patent Citations (2)
| Title |
|---|
| 水平三温区法制备低位错和无位错掺Si－GaAs单晶 尹庆民.稀有金属，第2期 1981 * |
| 水平法制备无位错GaAs单晶 莫培根.稀有金属，第1期 1988 * |
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