CN108468083A - A kind of semiconductor silicon single crystal stove with concealed heater - Google Patents
A kind of semiconductor silicon single crystal stove with concealed heater Download PDFInfo
- Publication number
- CN108468083A CN108468083A CN201810635152.7A CN201810635152A CN108468083A CN 108468083 A CN108468083 A CN 108468083A CN 201810635152 A CN201810635152 A CN 201810635152A CN 108468083 A CN108468083 A CN 108468083A
- Authority
- CN
- China
- Prior art keywords
- bushing
- heater
- heat screen
- single crystal
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 12
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 19
- 239000010439 graphite Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of semiconductor silicon single crystal stoves with concealed heater, heater, main heat screen including circular ring shape, the bottom heat screen positioned at main heat screen bottom, the graphite pot prop that is carried on the heat screen of bottom, crucible in graphite pot prop, further include the shielding bushing around the setting of graphite pot prop, shields and be equipped between the upper end of bushing and the upper end of main heat screen between the bottom end and the upper surface of bottom heat screen of upper plate, shielding bushing equipped with bushing substrate；Main heat screen, shielding bushing, upper plate and bushing substrate surround the insulating space of circular ring shape jointly, the heater is located in the insulating space of the circular ring shape to be isolated with the atmosphere that crucible is in, heater will not be by the gas attack in the atmosphere of crucible in actual use, the service life of heater can be improved, and heater can remain under a stable heated condition, heating function will not be made to be affected because of being corroded, to be conducive to improve single crystal growing furnace production stability and crystal yield.
Description
Technical field
The present invention relates to monocrystal stove technical fields.
Background technology
Monocrystalline silicon is the crystal with basic complete lattice structure, is a kind of good semi-conducting material, purity is reachable
To 99.9999999% or more, it can be used for diode grade, rectifying device grade, circuit-level and solar battery grade single crystal product article
Production and deep processing manufacture, subsequent product integrated circuit and semiconductor separation part are widely used to every field and are in
The forward position of new material development.
Semiconductor grade monocrystal stove is crystal growth equipment important in monocrystalline silicon industrial chain, currently, being used for silicon in the world
There are mainly two types of the main stream approach of single crystal growth：One is zone-melting process, another kind is vertical pulling method, and wherein vertical pulling method has growth
The advantages that monocrystalline quality is big, diameter is big, of low cost, production efficiency is high is always main means prepared by bulk silicon substrate.
In the single crystal growing furnace using vertical pulling method, seed crystal is immersed in the fused raw material in crucible, is added what heater generated
Under heat, seed crystal is lifted while rotating seed crystal and crucible, and crystalline silicon rod is grown in seed crystal lower end.Before and after crystal pulling, crucible carries out
Rotation and elevating movement.
A kind of single crystal growing furnace as disclosed in Chinese patent ZL 201310261116.6, including crucible, the heating around crucible
Device.The position and space setting of this kind of crucible and heater represent common setting in the prior art, but the skill of this kind of scheme
Art problem is that for heater with crucible in same atmosphere, which is silicon monoxide, because the material of heater is graphite,
Graphite is reacted with silicon monoxide can generate silicon carbide, corrode heater, cause the service life of heater not high.
Invention content
Goal of the invention：A kind of crucible shaft for single crystal furnace is provided, the skill for how making crucible axis cool down when in use can be solved
Art problem.
The present invention additionally provides a kind of single crystal growing furnace including crucible axis, which can cool down crucible axis.
Technical solution：In order to achieve the above objectives, following technical solution can be used in crucible shaft for single crystal furnace of the present invention：
A kind of semiconductor silicon single crystal stove with concealed heater, including the heater of circular ring shape, main heat screen, be located at
The bottom heat screen of main heat screen bottom, the graphite pot prop being carried on the heat screen of bottom, the crucible being located in graphite pot prop, the master
It is hollow cavity inside heat screen, further includes the shielding bushing around the setting of graphite pot prop, shielding bushing is located at main heat screen
It is internal；Shield be equipped between the upper end and the upper end of main heat screen of bushing upper plate, the bottom end and the bottom heat screen that shield bushing it is upper
Bushing substrate is equipped between surface；The main heat screen, shielding bushing, upper plate surround being isolated for circular ring shape jointly with bushing substrate
Space, the heater are located in the insulating space of the circular ring shape.
Advantageous effect：The heater is located in the insulating space of the circular ring shape, is separated by with the atmosphere that crucible is in
From heater will not be by the gas attack in the atmosphere of crucible in actual use, and can improve heater uses the longevity
Life, and heater can remain under a stable heated condition, will not make because of being corroded heating function by
It influences, to be conducive to improve single crystal growing furnace production stability and crystal yield.
Further, it is provided with circular opening in the bottom heat screen, circular ring shape is covered on the madial wall of the opening
Bushing bottom tube, abut against bushing substrate on the upside of the bushing bottom tube.
Further, upper plate, shielding bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube material be stone
Ink.
Further, the material of main heat screen and bottom heat screen is solidification felt.
Further, the material of the crucible is quartz.
Description of the drawings
Fig. 1 is sectional view of the single crystal growing furnace of the present invention in crucible and heater section.
Fig. 2 is the stereogram of heater in the present invention.
Specific implementation mode
Shown in Fig. 1, a kind of semiconductor silicon single crystal stove with concealed heater of the single crystal growing furnace, including circular ring shape
Heater 4, main heat screen 1, the bottom heat screen 9 positioned at 1 bottom of main heat screen, the graphite pot prop that is carried on bottom heat screen 9
5, the crucible 6 in graphite pot prop 5.1 inside of the main heat screen is hollow cavity, to accommodate other elements.In order to
So that heater 4 is isolated with space residing for crucible 6, further includes the shielding bushing being arranged around graphite pot prop 5 in the single crystal growing furnace
3, shielding bushing 3 is located inside main heat screen 1.Upper plate 2, screen are equipped between the upper end and the upper end of main heat screen 1 of shielding bushing 3
It covers and is equipped with bushing substrate 7 between the bottom end of bushing 3 and the upper surface of bottom heat screen 9.The main heat screen 1, shielding bushing 3, on
Plate 2 surrounds the closed insulating space of circular ring shape with bushing substrate 7 jointly.The isolation that the heater 4 is located at the circular ring shape is empty
In, and as shown in Fig. 2, heater 4 is supported on including four legs 41 on bottom heat screen 9.Heater institute link (is not schemed
Show) from the insulating space any position draw, pay attention to seal in the case of can't influence the insulating space with
The isolation in 6 place space of crucible.In addition, being provided with circular opening in the bottom heat screen 9, pasted on the madial wall of the opening
There are the bushing bottom tube 8 of circular ring shape, the upside of the bushing bottom tube 8 to abut against bushing substrate 7 to position and fix bushing substrate 7.
The material of said elements is selected as：Upper plate, shielding bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube
Material be graphite；The material of main heat screen and bottom heat screen is solidification felt；The material of the crucible is quartz.
The heater is located in the insulating space of the circular ring shape, is isolated with the atmosphere that crucible is in, in reality
Heater will not can improve the service life of heater, and heat by the gas attack in the atmosphere of crucible when use
Device can remain under a stable heated condition, heating function will not be made to be affected because of being corroded, to
Be conducive to improve single crystal growing furnace production stability and crystal yield.
In addition, there are many concrete methods of realizing and approach of the present invention, the above is only a preferred embodiment of the present invention.
It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, can also do
Go out several improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.What is be not known in the present embodiment is each
The available prior art of component part is realized.
Claims (5)
1. a kind of semiconductor silicon single crystal stove with concealed heater, including the heater of circular ring shape, main heat screen, it is located at master
The bottom heat screen of heat screen bottom, the graphite pot prop being carried on the heat screen of bottom, the crucible in graphite pot prop, the master every
It is hollow cavity inside heat shielding, it is characterised in that：Further include the shielding bushing around the setting of graphite pot prop, shielding bushing is located at
Inside main heat screen；Shield bushing upper end and the upper end of main heat screen between be equipped with upper plate, shield bushing bottom end and bottom every
Bushing substrate is equipped between the upper surface of heat shielding；The main heat screen, shielding bushing, upper plate and bushing substrate surround annulus jointly
The insulating space of shape, the heater are located in the insulating space of the circular ring shape.
2. the semiconductor silicon single crystal stove according to claim 1 with concealed heater, it is characterised in that：The bottom every
Be provided with circular opening in heat shielding, be covered with the bushing bottom tube of circular ring shape on the madial wall of the opening, the bushing bottom tube it is upper
Side abuts against bushing substrate.
3. the semiconductor silicon single crystal stove according to claim 2 with concealed heater, it is characterised in that：Upper plate, screen
Cover bushing, heater, graphite pot prop, bushing substrate, bushing bottom tube material be graphite.
4. the semiconductor silicon single crystal stove according to claim 1 with concealed heater, it is characterised in that：Main heat screen
Material with bottom heat screen is solidification felt.
5. the semiconductor silicon single crystal stove according to claim 1 with concealed heater, it is characterised in that：The crucible
Material be quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810635152.7A CN108468083A (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal stove with concealed heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810635152.7A CN108468083A (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal stove with concealed heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108468083A true CN108468083A (en) | 2018-08-31 |
Family
ID=63260037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810635152.7A Pending CN108468083A (en) | 2018-06-20 | 2018-06-20 | A kind of semiconductor silicon single crystal stove with concealed heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108468083A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111926384A (en) * | 2020-06-05 | 2020-11-13 | 徐州鑫晶半导体科技有限公司 | Single crystal furnace, method for determining operating parameters of single crystal furnace in growth process of single crystal silicon and method for preparing single crystal silicon |
| CN112725903A (en) * | 2020-11-26 | 2021-04-30 | 南京晶升能源设备有限公司 | Thermal field of silicon carbide raw material synthesis furnace and synthesis furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214898A (en) * | 1988-06-30 | 1990-01-18 | Kawasaki Steel Corp | Production unit for silicon single crystal |
| CN202658268U (en) * | 2012-02-14 | 2013-01-09 | 江苏协鑫硅材料科技发展有限公司 | Polycrystalline silicon ingot furnace |
| CN203333814U (en) * | 2013-06-06 | 2013-12-11 | 英利能源（中国）有限公司 | Mono-crystal furnace heat field heater with anti-corrosion block and heat field |
| CN103556222A (en) * | 2013-11-13 | 2014-02-05 | 英利集团有限公司 | Graphite heater and preparation method thereof |
| CN208517577U (en) * | 2018-06-20 | 2019-02-19 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal furnace with concealed heater |
-
2018
- 2018-06-20 CN CN201810635152.7A patent/CN108468083A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214898A (en) * | 1988-06-30 | 1990-01-18 | Kawasaki Steel Corp | Production unit for silicon single crystal |
| CN202658268U (en) * | 2012-02-14 | 2013-01-09 | 江苏协鑫硅材料科技发展有限公司 | Polycrystalline silicon ingot furnace |
| CN203333814U (en) * | 2013-06-06 | 2013-12-11 | 英利能源（中国）有限公司 | Mono-crystal furnace heat field heater with anti-corrosion block and heat field |
| CN103556222A (en) * | 2013-11-13 | 2014-02-05 | 英利集团有限公司 | Graphite heater and preparation method thereof |
| CN208517577U (en) * | 2018-06-20 | 2019-02-19 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal furnace with concealed heater |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111926384A (en) * | 2020-06-05 | 2020-11-13 | 徐州鑫晶半导体科技有限公司 | Single crystal furnace, method for determining operating parameters of single crystal furnace in growth process of single crystal silicon and method for preparing single crystal silicon |
| CN111926384B (en) * | 2020-06-05 | 2022-06-17 | 徐州鑫晶半导体科技有限公司 | Single crystal furnace, method for determining operating parameters of single crystal furnace in growth process of single crystal silicon and method for preparing single crystal silicon |
| CN112725903A (en) * | 2020-11-26 | 2021-04-30 | 南京晶升能源设备有限公司 | Thermal field of silicon carbide raw material synthesis furnace and synthesis furnace |
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