CN202658268U - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
- Publication number
- CN202658268U CN202658268U CN 201220047145 CN201220047145U CN202658268U CN 202658268 U CN202658268 U CN 202658268U CN 201220047145 CN201220047145 CN 201220047145 CN 201220047145 U CN201220047145 U CN 201220047145U CN 202658268 U CN202658268 U CN 202658268U
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- crucible
- heater
- silicon ingot
- polycrystalline silicon
- furnace
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Abstract
The utility model discloses a polycrystalline silicon ingot furnace, which comprises a furnace body, a furnace chamber, a heat exchange platform, a gas-filled tube, a top heater and a side heater, wherein the furnace chamber is enclosed by the furnace body, the heat exchange platform is arranged in the furnace chamber and is used to place a crucible, the gas-filled tube fills gas to the crucible, and the crucible is respectively heated by the top heater and the side heater. The top heater is arranged on the upper side of the crucible, and the side heater is arranged on the side of the crucible. The polycrystalline silicon ingot furnace further comprises a heat screen which is arranged between the top heater and the crucible, and the heat screen can obviously reduce direct washing of high temperature corrosion gas to the top heater, thereby protecting the top heater, and prolonging the life of the polycrystalline silicon ingot furnace. Simultaneously, the heat screen further can reduce graphite volatile of the top heater to enter silicon solution, thereby reducing carbon content of silicon ingot, and improving quality of the silicon ingot.
Description
[technical field]
The utility model relates to field of polysilicon technology, refers in particular to a kind of polycrystalline silicon ingot or purifying furnace.
[background technology]
Solar energy power generating is one of form of sustainable energy utilization, has all obtained rapidly development in each state in recent years.At present, use most often crystal silicon solar energy battery, crystal silicon solar energy battery is mainly made by monocrystalline silicon piece or polysilicon chip.Polysilicon chip is so that production capacity is high, energy consumption is low, the low dominant position that occupies solar cell of cost in world's photovoltaic industry, and ingot furnace is produced the core producing apparatus of polysilicon silicon ingot just.
Common polycrystalline silicon ingot or purifying furnace generally comprises furnace chamber, place in the furnace chamber and be used for placing the heat exchange platform of a crucible and be respectively applied to top heater and sidepiece well heater to crucible heating.Top heater is arranged at the top of crucible, and the sidepiece well heater is arranged at the sidepiece of crucible, and top heater and sidepiece well heater all heat crucible.Yet, the highly corrosive gas of hot stage will flow out from the crucible side plate in the ingot casting process, and directly wash away the edge of top heater, and then the edge of damage top heater, especially along with the continuous expansion of thermal field, it is more and more serious that this damage will become, thereby reduce the life-span of polycrystalline silicon ingot or purifying furnace.
[utility model content]
Based on this, be necessary to provide a kind of polycrystalline silicon ingot or purifying furnace with longer life.
A kind of polycrystalline silicon ingot or purifying furnace, it comprise body of heater, by body of heater enclose the furnace chamber that forms, place in the described furnace chamber and be used for placing the heat exchange platform of crucible, the gas-filled valve of inflating in the described crucible and top heater and the sidepiece well heater that respectively described crucible is heated, described top heater is arranged at the upside of described crucible, described sidepiece well heater is arranged at the side of described crucible, and described polycrystalline silicon ingot or purifying furnace also comprises the heat shielding that is arranged between described top heater and the described crucible.
Preferably, described heat shielding area in the horizontal direction is greater than top heater area in the horizontal direction.
Preferably, offer airflow hole on the described heat shielding.
Preferably, offer the groove of the sidepiece well heater of stepping down on the sidepiece of described heat shielding.
Preferably, described polycrystalline silicon ingot or purifying furnace further comprise the backplate that is arranged at the described crucible outside, the pillar that supports described heat exchange platform, the described top heater of suspention and described sidepiece well heater electrode, be movably connected on described body of heater the lifting connecting rod, be suspended to the heat-insulation cage on the described lifting connecting rod and be arranged at bleeding point on the described body of heater; Described heat exchange platform, crucible, top heater, sidepiece well heater and heat shielding all are arranged in the described heat-insulation cage, and described gas-filled valve is communicated with inside and outside the heat-insulation cage.
Preferably, described heat-insulation cage comprises the top thermal baffle that is positioned at the crucible upside, is positioned at the lower thermal baffle of crucible downside and is positioned at side thermal baffle around the crucible.
Preferably, described heat shielding is arranged on the thermal baffle of described top regularly or movably.
Preferably, described polycrystalline silicon ingot or purifying furnace further comprises the suspension rod of suspention heat shielding on described heat-insulation cage, and the material of described suspension rod is carbon/carbon compound material or graphite material.
Preferably, described polycrystalline silicon ingot or purifying furnace further comprises the bottom heater that is arranged at crucible bottom.
The beneficial effects of the utility model are as follows: because heat shielding is arranged between top heater and the crucible; described heat shielding can obviously weaken high temperature corrosion gas directly washing away top heater; thereby protection top heater; to prolong the life-span of polycrystalline silicon ingot or purifying furnace; simultaneously; heat shielding can also reduce top heater graphite volatile matter and enter silicon liquid, thereby reduces the carbon content of ingot casting silicon, to improve the quality of ingot casting silicon.
[description of drawings]
Fig. 1 is the structural representation of present embodiment polycrystalline silicon ingot or purifying furnace;
Fig. 2 is the structural representation of present embodiment heat shielding.
[embodiment]
Please refer to the drawing 1 and Fig. 2, present embodiment discloses a kind of polycrystalline silicon ingot or purifying furnace 100, it comprise body of heater 11, by body of heater 11 enclose the furnace chamber 12 that forms, place in the furnace chamber 12 and be used for placing the heat exchange platform 2 of crucible 200, to the gas-filled valve 3 of crucible 200 interior inflations and the top heater 41 and the sidepiece well heater 42 that respectively crucible 200 are heated.Top heater 41 is arranged at the upside of crucible 200, and sidepiece well heater 42 is arranged at the side of crucible 200.Polycrystalline silicon ingot or purifying furnace 100 also comprises the heat shielding 5 that is arranged between top heater 41 and the crucible 200.Polycrystalline silicon ingot or purifying furnace 100 further comprises the bottom heater (not shown) that is arranged at crucible 200 bottoms, and bottom heater is used for crucible 200 bottoms are heated.
Polycrystalline silicon ingot or purifying furnace 100 further comprise pillar 62, suspention top heater 41 and the sidepiece well heater 42 of the backplate 61 that is arranged at crucible 200 outsides, supporting hot board 2 electrode 43, be movably connected on body of heater 11 lifting connecting rod 7, be suspended to and promote the heat-insulation cage 8 on the connecting rod 7 and be arranged at bleeding point 9 on the body of heater 2.
The centre of heat shielding 5 offers the airflow hole 52 that the air-flow that is filled with for gas-filled valve 3 passes through.Be evenly equipped with the fixed orifices 53 of several fixed derricks 51 on the heat shielding 5.The material of suspension rod 51 is carbon/carbon compound material or graphite material.
Offer the groove 54 of the sidepiece well heater 42 of stepping down on the sidepiece of described heat shielding 5, touch sidepiece well heater 42 to avoid heat shielding 5.
In the ingot casting process; especially the brilliant stage of fusing length; after gas is filled with from furnace chamber 12 central authorities; reflux from reflection all around; because heat shielding 5 is arranged between top heater 41 and the crucible 200, and heat shielding 5 area in the horizontal direction is greater than top heater 41 area in the horizontal direction, so heat shielding 5 can obviously weaken high temperature corrosion gas directly washing away top heater 41; thereby protection top heater 41 is to prolong the life-span of polycrystalline silicon ingot or purifying furnace 100.Simultaneously, heat shielding 5 can also reduce top heater 41 graphite volatile matters and enter silicon liquid, thereby reduces the carbon content of ingot casting silicon, to improve the quality of ingot casting silicon.
Above-mentioned listed specific implementation is nonrestrictive, and for a person skilled in the art, within not departing from the utility model scope, the various modifications and variations of carrying out all belong to protection domain of the present utility model.
Claims (9)
1. polycrystalline silicon ingot or purifying furnace, it comprise body of heater, by body of heater enclose the furnace chamber that forms, place in the described furnace chamber and be used for placing the heat exchange platform of crucible, the gas-filled valve of inflating in the described crucible and top heater and the sidepiece well heater that respectively described crucible is heated, described top heater is arranged at the upside of described crucible, described sidepiece well heater is arranged at the side of described crucible, it is characterized in that: described polycrystalline silicon ingot or purifying furnace also comprises the heat shielding that is arranged between described top heater and the described crucible.
2. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterized in that: described heat shielding area in the horizontal direction is greater than top heater area in the horizontal direction.
3. polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: offer airflow hole on the described heat shielding.
4. polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: the groove that offers the sidepiece well heater of stepping down on the sidepiece of described heat shielding.
5. such as each described polycrystalline silicon ingot or purifying furnace in the claim 1 to 4, it is characterized in that: further comprise the backplate that is arranged at the described crucible outside, the pillar that supports described heat exchange platform, the described top heater of suspention and described sidepiece well heater electrode, be movably connected on described body of heater the lifting connecting rod, be suspended to the heat-insulation cage on the described lifting connecting rod and be arranged at bleeding point on the described body of heater; Described heat exchange platform, crucible, top heater, sidepiece well heater and heat shielding all are arranged in the described heat-insulation cage, and described gas-filled valve is communicated with inside and outside the heat-insulation cage.
6. polycrystalline silicon ingot or purifying furnace as claimed in claim 5 is characterized in that: described heat-insulation cage comprises the top thermal baffle that is positioned at the crucible upside, be positioned at the lower thermal baffle of crucible downside and be positioned at side thermal baffle around the crucible.
7. polycrystalline silicon ingot or purifying furnace as claimed in claim 6, it is characterized in that: described heat shielding is arranged on the thermal baffle of described top regularly or movably.
8. polycrystalline silicon ingot or purifying furnace as claimed in claim 5 is characterized in that: further comprise the suspension rod of suspention heat shielding on described heat-insulation cage, the material of described suspension rod is carbon/carbon compound material or graphite material.
9. polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: further comprise the bottom heater that is arranged at crucible bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220047145 CN202658268U (en) | 2012-02-14 | 2012-02-14 | Polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220047145 CN202658268U (en) | 2012-02-14 | 2012-02-14 | Polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202658268U true CN202658268U (en) | 2013-01-09 |
Family
ID=47453187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220047145 Expired - Lifetime CN202658268U (en) | 2012-02-14 | 2012-02-14 | Polycrystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202658268U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343387A (en) * | 2013-07-17 | 2013-10-09 | 英利能源（中国）有限公司 | Polycrystalline silicon ingotting furnace and ingotting method thereof |
| CN108468083A (en) * | 2018-06-20 | 2018-08-31 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal stove with concealed heater |
-
2012
- 2012-02-14 CN CN 201220047145 patent/CN202658268U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343387A (en) * | 2013-07-17 | 2013-10-09 | 英利能源（中国）有限公司 | Polycrystalline silicon ingotting furnace and ingotting method thereof |
| CN103343387B (en) * | 2013-07-17 | 2016-03-30 | 英利能源（中国）有限公司 | A kind of polycrystalline silicon ingot or purifying furnace and casting ingot method thereof |
| CN108468083A (en) * | 2018-06-20 | 2018-08-31 | 南京晶能半导体科技有限公司 | A kind of semiconductor silicon single crystal stove with concealed heater |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130109 |