CN208414633U - Splashproof material material lane device - Google Patents
Splashproof material material lane device Download PDFInfo
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- CN208414633U CN208414633U CN201820766074.XU CN201820766074U CN208414633U CN 208414633 U CN208414633 U CN 208414633U CN 201820766074 U CN201820766074 U CN 201820766074U CN 208414633 U CN208414633 U CN 208414633U
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- crucible
- passage
- splashproof
- lane device
- surge hopper
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Abstract
A kind of splashproof material material lane device disclosed by the utility model, for supplying material, including feeder pipe and passage in the crucible to furnace interior, the feeder pipe docks passage, and the passage is inside heat shielding and opposite with the crucible.Surge hopper is arranged in passage upper end in the splashproof material material lane device of the utility model, changes the transport path of material, and then reduce the falling speed of material；Passage uses S type warp architecture, has further buffered the falling speed of material；Passage is set to inside heat shielding, on the basis of not changing original crucible and thermal field size, material can be added in crucible, production efficiency is improved, reduces production cost.
Description
Technical field
The utility model belongs to single crystal silicon material preparation technical field, and in particular to a kind of splashproof material material lane device.
Background technique
Monocrystalline silicon is widely used in solar battery and semiconductor field, is the basic material of photovoltaic, electronics industry.CZ work
Skill is the common process for preparing monocrystalline silicon.Conventional CZ technique generallys use primary charging or the multiple composite feeding-material of concubine, due to charging
Consuming time is long with melt process, leads to that production efficiency is lower, manufacturing cost is relatively high.In addition, routine CZ technique usually exists
Dopant is added when initial charge or repeatedly charging, due to the influence of doped chemical segregation coefficient, the monocrystalline silicon mandrel of preparation
It is uneven to resistivity.
CCZ single crystal process is another technique for preparing monocrystalline silicon, is continuous crystal-pulling technique.CCZ technique: additional by furnace
Raw material is added continuously in crucible by glassware device in crystal pulling preparation process, thus guarantee long-time continuous crystal-pulling into
Row.And CCZ technique is convenient for the addition at any time of dopant, to guarantee the silicon single crystal rod axial direction uniform resistivity of preparation.But it is inciting somebody to action
Raw material by material channel device provisioning into crucible when, raw material can be dropped into crucible in melt with larger speed, generate compared with
Big impact force.When raw material falls into melt with larger speed, it will lead to melt liquid level oscillation, influence crystal growth.
CCZ technique generallys use double crucibles and carries out continuous crystal-pulling, and double crucibles include interior crucible and outer crucible, and interior crucible is corresponding
Crystal growth area.The charging material channel device of usual CCZ technique is set to outer side of heat shield.Since CCZ technique is raw by crystal
Long region and melt area separate, therefore compared with CZ technique, when growing the monocrystalline silicon of same size, then need to increase to earthenware
The requirement of crucible and thermal field size, this will lead to the increase of thermal field cost.
Therefore, it is necessary to provide a kind of splashproof material material lane device, the decrease speed of raw material can either be effectively reduced,
It is can be avoided again using large scale crucible and thermal field.
Utility model content
The purpose of this utility model is to provide a kind of splashproof material material lane devices, can buffer the lower reduction of speed of raw material
Degree, while can be avoided again using large scale crucible and large scale thermal field, reduce production cost.
The technical scheme adopted by the utility model is a kind of splashproof material material lane device, for furnace interior
Material, including feeder pipe and passage are supplied in crucible, the feeder pipe docks passage, and the passage is inside heat shielding
And it is opposite with the crucible.
Further, the passage includes at least a warp architecture, and the warp architecture is for changing material decline
Direction, buffering material decrease speed.
Example, the S-shaped bending of warp architecture.
Preferably, the upper end of the passage is connected with surge hopper, and the surge hopper is docked in the feeder pipe lower end.
Example, the surge hopper is refractory ceramics material.
Example, the inner wall of the surge hopper is provided with refractory ceramics coating.
Further, the crucible is opposite for double crucible structures, including interior crucible and outer crucible, the lower end of the passage
Region is arranged between the interior crucible and outer crucible.
Surge hopper is arranged in passage upper end in the splashproof material material lane device of the utility model, changes the conveying of material
Path, and then reduce the falling speed of material；Passage uses S type warp architecture, has further buffered the falling speed of material；
Passage is set to inside heat shielding, on the basis of not changing original crucible and thermal field size, material can be added to earthenware
In crucible, improves production efficiency, reduces production cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the splashproof material material lane device of the utility model；
Fig. 2 is the contrast schematic diagram of passage setting position.
In figure, 10. splashproof material material lane devices, 11. feeder pipes, 12. passages, 120. surge hoppers, 20. heat shieldings,
30. heater, 40. crucibles, 410. outer crucibles, crucible in 420., 50. silicon materials, 510. melts, 60. furnace bodies.
Specific embodiment
The utility model is described in detail with reference to the accompanying drawings and detailed description.
The utility model relates to the splashproof material material lane devices 10 in CCZ technique single crystal pulling apparatus, and structure is such as
Shown in Fig. 1, single crystal pulling apparatus includes furnace body 60, and double crucibles 40 are provided in furnace body 60, and double crucibles 40 include interior 420 He of crucible
Outer crucible 410.The thermal fields accessories such as heater 30 are additionally provided in furnace body 60, heater 30 is around double crucibles 40, for adding
It is hot-melted silicon material 50, forms melt 510.It is crystal growth area inside interior crucible 420, interior crucible bottom 420 is provided with aperture (figure
In be not shown), with allow melt from the region between interior crucible 420 and outer crucible 410 enter interior crucible 420 in.
The splashproof material material lane device 10 of the utility model is for supplying silicon material into double crucibles 40 inside furnace body 60
50.Splashproof material material lane device 10 includes feeder pipe 11 and passage 12, and feeder pipe 11 docks passage 12, and passage 12 passes through
It wears inside heat shielding 20 and opposite with crucible.
The upper end of passage 12 is provided with surge hopper 120, and surge hopper 120 is arranged on 20 top of heat shielding.When charging, under
The lower end of expects pipe 11 is located in surge hopper 120, docks with surge hopper 120, and silicon material 50 is avoided to splash out of surge hopper 120
Out.During silicon material 50 is through falling on surge hopper 120 under feeder pipe 11, the transport path of silicon material 50 is changed, is thereby reduced
The falling speed of silicon material 50.The distance in surge hopper 120 is protruded into 11 lower end of feeder pipe, according to blanking rate and silicon material 50 slow
The aggregate amount rushed in funnel 120 is suitably adjusted, and adjusts principle to prevent silicon material 40 from sputtering surge hopper 121.
In order to adapt to the high temperature in furnace body 60 and avoid introducing impurity, surge hopper 120 is preferably refractory ceramics material
Matter is made or is arranged on the inside of it refractory ceramics coating.
In addition, the S-type warp architecture of diversion pipe 12, has further changed the transport path of silicon material 50, reduces silicon material and fall
When impact force, further reduced the falling speed of silicon material 50, thus when silicon material 50 being avoided to fall into melt 510 formed splash material.
Diversion pipe 12 is arranged in and has different effects inside and outside heat shielding, it is specific as shown in Fig. 2, the setting of diversion pipe 12 is existed
When in heat shielding 20 (solid line expression), it can be met using the crucible of smaller size and silicon material is added to interior crucible 420 and outer crucible
Corresponding region between 410.If the setting of diversion pipe 12 is needed the earthenware using larger size in 20 outside (dotted line expression) of heat shielding
Crucible can meet silicon material being added to corresponding region between interior crucible 420 and outer crucible 410.Correspondingly, then needing using larger
The thermal fields corollary apparatus such as size heater, causes production cost to increase.Therefore, diversion pipe 12 is arranged in heat shielding the utility model
Inside 20, diversion pipe 12 runs through heat shielding 20, and 12 lower end of diversion pipe exports region between relatively interior crucible 420 and outer crucible 410, i.e.,
Melt area.
Claims (7)
1. a kind of splashproof material material lane device, for supplying material in the crucible to furnace interior, which is characterized in that including under
Expects pipe and passage, the feeder pipe dock passage, and the passage is inside heat shielding and opposite with the crucible.
2. splashproof material material lane device as described in claim 1, which is characterized in that the passage is curved including at least one
Bent structure, the warp architecture is for changing material descent direction, buffering material decrease speed.
3. splashproof material material lane device as claimed in claim 2, which is characterized in that the S-shaped bending of warp architecture.
4. splashproof material material lane device as described in any one of claims 1-3, which is characterized in that the upper end of the passage
It is connected with surge hopper, the surge hopper is docked in the feeder pipe lower end.
5. splashproof material material lane device as claimed in claim 4, which is characterized in that the surge hopper is refractory ceramics
Material.
6. splashproof material material lane device as claimed in claim 4, which is characterized in that the inner wall of the surge hopper is provided with
Refractory ceramics coating.
7. splashproof material material lane device as described in claim 1, which is characterized in that the crucible is double crucible structures, packet
Interior crucible and outer crucible are included, region is arranged between the relatively described interior crucible in the lower end of the passage and outer crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820766074.XU CN208414633U (en) | 2018-05-22 | 2018-05-22 | Splashproof material material lane device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820766074.XU CN208414633U (en) | 2018-05-22 | 2018-05-22 | Splashproof material material lane device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208414633U true CN208414633U (en) | 2019-01-22 |
Family
ID=65116372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820766074.XU Active CN208414633U (en) | 2018-05-22 | 2018-05-22 | Splashproof material material lane device |
Country Status (1)
| Country | Link |
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| CN (1) | CN208414633U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109518268A (en) * | 2019-01-23 | 2019-03-26 | 江苏协鑫软控设备科技发展有限公司 | Pulling of crystals furnace feeder |
| WO2023231520A1 (en) * | 2022-05-31 | 2023-12-07 | 隆基绿能科技股份有限公司 | Feeding device and crystal pulling device |
-
2018
- 2018-05-22 CN CN201820766074.XU patent/CN208414633U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109518268A (en) * | 2019-01-23 | 2019-03-26 | 江苏协鑫软控设备科技发展有限公司 | Pulling of crystals furnace feeder |
| WO2023231520A1 (en) * | 2022-05-31 | 2023-12-07 | 隆基绿能科技股份有限公司 | Feeding device and crystal pulling device |
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