JPH0764672B2 - Crystal growth equipment - Google Patents
Crystal growth equipmentInfo
- Publication number
- JPH0764672B2 JPH0764672B2 JP62277894A JP27789487A JPH0764672B2 JP H0764672 B2 JPH0764672 B2 JP H0764672B2 JP 62277894 A JP62277894 A JP 62277894A JP 27789487 A JP27789487 A JP 27789487A JP H0764672 B2 JPH0764672 B2 JP H0764672B2
- Authority
- JP
- Japan
- Prior art keywords
- molten metal
- raw material
- supply pipe
- temperature
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 「産業上の利用分野」 本発明は、高純度シリコン単結晶等の製造に用いられる
結晶育成装置に関する。TECHNICAL FIELD The present invention relates to a crystal growing apparatus used for manufacturing a high-purity silicon single crystal or the like.
「従来の技術」 CZ法によるシリコン単結晶の製造においては、結晶引き
上げによる溶湯量減少に伴い、溶湯と石英ルツボとの接
触面積が変化し、ルツボからの酸素溶出量が変化する。
しかし最近では、半導体素子基板としてのシリコン単結
晶に、酸素濃度とドーパント濃度の双方に厳しい許容規
格が設けられており、このため、引き上げられた単結晶
のうち半導体素子として使用可能なのは一部分にしか過
ぎず、原料の歩留まりが悪い問題があった。“Prior Art” In the production of a silicon single crystal by the CZ method, the contact area between the molten metal and the quartz crucible changes as the amount of molten metal decreases due to crystal pulling, and the amount of oxygen eluted from the crucible changes.
However, recently, the silicon single crystal as a semiconductor element substrate has been provided with strict tolerance standards for both the oxygen concentration and the dopant concentration. Therefore, only a part of the pulled up single crystal can be used as a semiconductor element. However, there was a problem that the yield of raw materials was poor.
そこでこの問題を改善するため、結晶の引き上げ量に応
じて、顆粒状シリコン原料を供給管を通じてルツボ内に
順次供給して溶湯量を一定に保ち、溶湯条件の変化を防
ぐようにした装置が従来より各種提案されている（例え
ば特公昭57−40119号）。Therefore, in order to improve this problem, the conventional apparatus has been designed to prevent the change of molten metal conditions by supplying granular silicon raw materials sequentially through the supply pipe into the crucible according to the amount of crystal pulling to keep the molten metal amount constant. Various proposals have been made (for example, Japanese Examined Patent Publication No. 57-40119).
「発明が解決しようとする問題点」 しかし上記の装置では、温度の低い原料が直接高温の溶
湯（約1400℃）に投入されるため、溶湯温度が低下し、
結晶成長に悪影響を与えるという問題があった。特に、
ルツボが小形の場合や、単結晶の成長を速めるために引
上速度を通常より大きくしている場合には、溶湯温度低
下が大きく、投入された原料が溶けきらなかったり、溶
湯表面周縁から溶湯が凝固し始めるという欠点がある。"Problems to be solved by the invention" However, in the above apparatus, since the raw material having a low temperature is directly charged into the high temperature molten metal (about 1400 ° C), the molten metal temperature decreases,
There is a problem that it adversely affects the crystal growth. In particular,
If the crucible is small, or if the pulling speed is higher than usual to accelerate the growth of the single crystal, the temperature of the molten metal will drop significantly, and the introduced raw materials will not be completely melted or the molten metal will be melted from the periphery of the molten metal surface. Has the drawback that it begins to solidify.
そこで、原料供給機構にヒータを付設し、投入前に原料
を予熱しておく構成も提案されているが、その分、装置
が高価になり、複雑化・大形化が避けられなかった。Therefore, a structure has been proposed in which a heater is attached to the raw material supply mechanism to preheat the raw material before charging, but the apparatus becomes expensive accordingly, and inevitably it becomes complicated and large.
「問題点を解決する手段」 本発明は上記問題を解決するためになされたもので、ル
ツボ内の溶湯に原料を供給するための供給管の下端を、
前記ルツボの内周面近傍かつ溶湯の若干上方に位置さ
せ、かつこの下端部に原料を一定時間滞留させる滞留部
を設けたことを特徴とし、これにより、原料を溶湯の放
射熱により溶湯温度に近い温度まで加熱させ、原料投入
に伴う溶湯温度の低下を防ぐ。"Means for Solving Problems" The present invention has been made to solve the above-mentioned problems, in which the lower end of the supply pipe for supplying the raw material to the molten metal in the crucible is
The crucible is characterized in that it is located near the inner peripheral surface and slightly above the molten metal, and a retention portion for retaining the raw material for a certain period of time is provided at the lower end portion thereof, whereby the raw material is heated to the molten metal temperature by the radiant heat of the molten metal. It is heated to a close temperature to prevent the temperature of the molten metal from dropping when the raw materials are added.
「実施例」 第１図は、本発明に係わる結晶育成装置の一実施例を示
す縦断面図である。"Embodiment" FIG. 1 is a longitudinal sectional view showing an embodiment of the crystal growing apparatus according to the present invention.
図中符号１は炉体、２は断熱材、３は加熱ヒータ、４は
回転軸５の上端に固定された黒鉛サセプタ、６は黒鉛サ
セプタ４にはめ込まれた石英ルツボであり、このルツボ
６の上方には、下端にシードＳを固定した引上ワイヤ７
を昇降する引上機構（図示略）が設けられている。In the figure, reference numeral 1 is a furnace body, 2 is a heat insulating material, 3 is a heater, 4 is a graphite susceptor fixed to the upper end of a rotary shaft 5, and 6 is a quartz crucible fitted in the graphite susceptor 4. On the upper side, a pulling wire 7 having a seed S fixed to the lower end
A pull-up mechanism (not shown) for moving up and down is provided.
以上の構成は従来のものと同様で、本発明の特徴は符号
10に示す原料供給管にある。The above configuration is the same as the conventional one, and the features of the present invention are
It is in the raw material supply pipe shown in 10.
この供給管10は、基端側が原料供給機構（図示略）に連
結された石英製断面円形のもので、炉体壁を貫通して固
定され、炉体１内で下方に屈折し、その下端がルツボ６
の内周面近傍かつ溶湯Ｙの若干上方に位置決めされてい
る。そして、原料供給機構から導入される顆粒状シリコ
ン原料を溶湯Ｙに落とし込む構成となっている。この供
給管10の下端にはＴ字管部（滞留部）11が形成されてお
り、このＴ字管部11の水平長および口径は、供給管10を
下って来た原料がこのＴ字管部11で所望時間滞留したう
え、一部のみが残ることなく順次溶湯Ｙへ落下するよう
に設定されている。The supply pipe 10 has a circular quartz cross-section whose base end side is connected to a raw material supply mechanism (not shown). The supply pipe 10 is fixed through the wall of the furnace body and is bent downward in the furnace body 1 and its lower end. Crucible 6
Is positioned in the vicinity of the inner peripheral surface and slightly above the molten metal Y. The granular silicon raw material introduced from the raw material supply mechanism is dropped into the molten metal Y. A T-shaped pipe portion (retaining portion) 11 is formed at the lower end of the supply pipe 10, and the horizontal length and diameter of the T-shaped pipe portion 11 are such that the raw material coming down the supply pipe 10 is the T-shaped pipe. It is set so that it stays in the section 11 for a desired time, and only a part of it stays and falls into the molten metal Y sequentially.
上記構成の結晶育成装置においては、原料供給機構が供
給する原料が供給管10の下端に形成されたＴ字管部11で
所定時間滞留したのち溶湯に落下するので、この間に放
射熱を受ける時間が長く、しかもＴ字管部11の内底面と
の接触により効率良く伝熱される。このため、溶湯Ｙへ
落下するまでに原料を大幅に昇温させることができ、溶
湯Ｙとの温度差を小さくして、原料投入による溶湯温度
の変化を効果的に低減することができる。したがって、
投入された原料が溶けきらなかったり、溶湯Ｙが凝固す
るといった問題がなく、単結晶成長部の温度変化による
結晶欠陥の発生等も防げる。In the crystal growing apparatus having the above-described structure, the raw material supplied by the raw material supply mechanism stays in the T-shaped tube portion 11 formed at the lower end of the supply pipe 10 for a predetermined time and then falls into the molten metal. Is long, and moreover, heat is transferred efficiently by contact with the inner bottom surface of the T-shaped tube portion 11. For this reason, the temperature of the raw material can be significantly increased by the time it falls into the molten metal Y, the temperature difference from the molten metal Y can be reduced, and the change in the molten metal temperature due to the introduction of the raw material can be effectively reduced. Therefore,
There is no problem that the charged raw materials are not completely melted or the molten metal Y is solidified, and the occurrence of crystal defects due to the temperature change of the single crystal growth portion can be prevented.
なお以下に、放射伝熱によるシリコン原料粒子の温度上
昇を試算して、本発明の効果を明確にする。粒子粒径Ｄ
＝1mm、シリコン粒子の輻射率ε＝0.45とすると、粒子
の各パラメータは次のようになる。The effect of the present invention will be clarified below by calculating the temperature rise of silicon raw material particles due to radiative heat transfer. Particle size D
= 1 mm and emissivity of silicon particles ε = 0.45, the parameters of the particles are as follows.
表面積Ｓ＝４πD2＝3.142×10-6（m2） 体積Ｖ＝4/3π・（D/2）３＝5.24×10-10（m3） 質量Ｍ＝Ｖ・γ＝1.22×10-6（kg） 熱容量Ｃ＝Ｍ・Cp＝8.3×10-4（J/℃） 粒子の温度Ｔ℃、Ar雰囲気温度1000℃とすると、 ｔ秒間で粒子の受ける放射伝熱量Ｑ ＝4.88Sε（（1273/100）４−（（Ｔ＋273）/100）４） ・103・4.187・1/602・ｔ（Ｊ） 粒子の温度上昇ΔＴ＝Q/C（℃） 上式により放射伝熱による粒子温度の経時変化を算出す
ると、次の結果が得られる。Surface area S = 4π D 2 = 3.142 × 10 -6 (m 2 ) Volume V = 4 / 3π ・ (D / 2) 3 ＝ 5.24 × 10 -10 (m 3 ) Mass M = V ・ γ = 1.22 × 10 -6 (Kg) Heat capacity C = M · Cp = 8.3 × 10 -4 (J / ℃) Assuming particle temperature T ℃ and Ar atmosphere temperature 1000 ℃, radiant heat transfer Q = 4.88Sε ((1273 / 100) 4 − ((T + 273) / 100) 4 ) ・ 10 3・ 4.187 ・ 1/60 2・ t (J) Particle temperature rise ΔT = Q / C (℃) Particle temperature due to radiative heat transfer according to the above formula The following results are obtained by calculating the change with time.
初期温度25℃ １秒後…276℃ ２秒後…510℃ ３秒後…704℃ ４秒後…840℃ ５秒後…920℃ ６秒後…962℃ ７秒後…982℃ ８秒後…992℃ ９秒後…996℃ 10秒後…998℃ 一方、シリコン粒子を50cm自由落下させた場合は0.32秒
で溶湯に落下し、この間に約100℃（上記式より算出）
にしか昇温しないため、落下時間を数秒延ばすことによ
り、粒子を大幅に昇温できることが明らかである。しか
も上記計算は放射伝熱のみを考慮したもので、実際には
供給管10内の高温雰囲気ガスと接触するための伝熱や、
供給管10内面との接触による伝熱も起こるため、滞留時
間延長による昇温効果はいっそう顕著であると予想され
る。Initial temperature 25 ℃ 1 second… 276 ℃ 2 seconds… 510 ℃ 3 seconds… 704 ℃ 4 seconds… 840 ℃ 5 seconds… 920 ℃ 6 seconds… 962 ℃ 7 seconds… 982 ℃ 8 seconds… 992 ° C 9 seconds later 996 ° C 10 seconds later 998 ° C On the other hand, when the silicon particles were allowed to fall freely by 50 cm, they dropped into the molten metal in 0.32 seconds, during which about 100 ° C (calculated from the above formula)
Since the temperature rises only for a while, it is clear that the particles can be heated to a large extent by extending the fall time for several seconds. Moreover, the above calculation considers only the radiative heat transfer, and actually, the heat transfer for contacting the high temperature atmosphere gas in the supply pipe 10 and
Since heat transfer also occurs due to contact with the inner surface of the supply pipe 10, it is expected that the temperature rise effect by extending the residence time will be more remarkable.
また、この装置では、原料供給機構に予熱用ヒーターを
付設したものに比べ、供給管10を加工するだけでよいか
ら実施コストが安く、しかも装置が小形かつ単純で済む
という利点がある。Further, this apparatus has an advantage that the cost is low because only the feed pipe 10 is processed, and the apparatus is small and simple, as compared with the case where the preheating heater is attached to the raw material supply mechanism.
さらに、この装置では、Ｔ字管部11との衝突による粒子
の落下速度が小さくなるので、原料投入時の溶湯Ｙの振
動が小さく、振動により単結晶の結晶成長部に転位等の
欠陥を引き起こすおそれがない。よって、この点からも
良質な単結晶を製造できるという効果が得られる。Further, in this apparatus, since the falling velocity of particles due to the collision with the T-shaped tube portion 11 becomes small, the vibration of the molten metal Y at the time of introducing the raw material is small, and the vibration causes defects such as dislocations in the crystal growth portion of the single crystal. There is no fear. Therefore, also from this point, it is possible to obtain the effect that a good-quality single crystal can be manufactured.
なお、本発明の供給管は上記実施例のみに限られず、第
３図ないし第５図のようなものも実施可能である。The supply pipe of the present invention is not limited to the above-mentioned embodiment, and the pipes shown in FIGS. 3 to 5 can be implemented.
第３図は、供給管10の下端にルツボ６の内周方向に延び
る一定長の緩傾斜部12を形成し、その下端開口部を再び
下方に向けたもので、管内を落下してきた原料を、前記
緩傾斜部12に沿ってゆっくり移動させる。これによれ
ば、緩傾斜部12の角度や長さを変更するだけで滞留時間
を簡単に調節できるうえ、緩傾斜部12が溶湯に近いため
供給管10内の原料が受ける放射熱量が大きい利点があ
る。FIG. 3 shows that the feed pipe 10 is provided with a gently sloping portion 12 extending in the inner circumferential direction of the crucible 6 at a lower end thereof, and the lower end opening portion thereof is directed downward again. , Slowly move along the gentle slope 12. According to this, the residence time can be easily adjusted only by changing the angle and the length of the gently sloping portion 12, and since the gently sloping portion 12 is close to the molten metal, a large amount of radiation heat is received by the raw material in the supply pipe 10. There is.
第４図は、供給管10の下端を半球状に塞ぎ、ここに多数
の孔13を形成したものである。In FIG. 4, the lower end of the supply pipe 10 is closed in a hemispherical shape, and a large number of holes 13 are formed therein.
第５図は、供給管10の下端部を球状に膨らませて貯留部
14を形成し、その下端面に小さな孔15を形成したもの
で、貯留部14に一定量の原料が溜まるように各部寸法を
設定すれば、原料の滞留時間を大幅に長くできる。FIG. 5 shows that the lower end of the supply pipe 10 is bulged into a spherical shape to store it.
14 is formed and a small hole 15 is formed in the lower end surface thereof. If the dimensions of each part are set so that a fixed amount of raw material is stored in the storage portion 14, the retention time of the raw material can be significantly lengthened.
なお、本発明は上記実施例のみに限られず、上記各実施
例の組み合わや、適宜変形も可能である。The present invention is not limited to the above-described embodiments, and combinations of the above-described embodiments and appropriate modifications are possible.
「発明の効果」 以上説明したように、本発明の結晶育成装置において
は、滞留部の作用により供給管内を原料が時間をかけて
落下するため、原料が受ける放射熱量およびその他の伝
熱量が大きい。したがって、原料が溶湯に落下するまで
に、この原料を溶湯の放射熱による溶湯温度に近い温度
まで加熱させることができ、原料投入による溶湯温度の
変化を効果的に低減することが可能で、原料が溶けきら
なかったり、溶湯Ｙが凝固するといった問題がなく、単
結晶成長部の温度変化による結晶欠陥の発生等も防げ
る。"Effects of the Invention" As described above, in the crystal growing apparatus of the present invention, the raw material drops in the supply pipe over time due to the action of the retention portion, so that the radiant heat amount and other heat transfer amount received by the raw material are large. . Therefore, before the raw material falls into the molten metal, the raw material can be heated to a temperature close to the molten metal temperature due to the radiant heat of the molten metal, and it is possible to effectively reduce the change in the molten metal temperature caused by charging the raw material. Does not completely melt or the molten metal Y solidifies, and it is possible to prevent the occurrence of crystal defects due to the temperature change of the single crystal growth portion.
第１図は本発明の一実施例のシリコン結晶育成装置を示
す縦断面図、第２図は同装置に使用した供給管の縦断面
図、第３図ないし第５図はそれぞれ本発明の他の実施例
の供給管を示す縦断面図である。 １……炉体、６……ルツボ、 ７……引き上げワイヤ、10……供給管、 （以下、いずれも滞留部） 11……Ｔ字管部、12……緩傾斜部、 13……孔、14……貯留部、15……孔。FIG. 1 is a vertical sectional view showing a silicon crystal growing apparatus according to one embodiment of the present invention, FIG. 2 is a vertical sectional view of a supply pipe used in the apparatus, and FIGS. FIG. 3 is a vertical cross-sectional view showing the supply pipe of the embodiment of FIG. 1 ... Furnace body, 6 ... crucible, 7 ... pulling wire, 10 ... supply pipe, (hereinafter, all are stagnant parts) 11 ... T-shaped pipe part, 12 ... gently sloping part, 13 ... hole , 14 …… Reservoir, 15 …… Hole.
フロントページの続き (72)発明者 佐平 健彰 埼玉県大宮市北袋町１丁目297番地 三菱 金属株式会社中央研究所内 (56)参考文献 特公 昭56−11675（ＪＰ，Ｂ２)Front Page Continuation (72) Inventor Takeaki Sahira 1-297 Kitabukuro-cho, Omiya City, Saitama Prefecture Central Research Laboratory, Mitsubishi Metals Co., Ltd. (56) References Japanese Patent Publication Sho 56-11675 (JP, B2)
Claims (1)
記溶湯に多結晶原料を供給するための供給管と、前記ル
ツボ内の溶湯から単結晶を引き上げる引上機構とを備え
た結晶育成装置において、 前記供給管の下端を、前記ルツボの内周面近傍かつ溶湯
の若干上方に位置させ、かつこの下端部に、原料を一定
時間滞留させる滞留部を設けたことを特徴とする結晶育
成装置。1. A crystal comprising a crucible for melting a polycrystal into a molten metal, a supply pipe for supplying a polycrystalline raw material to the molten metal, and a pulling mechanism for pulling a single crystal from the molten metal in the crucible. In the growing apparatus, the lower end of the supply pipe is located in the vicinity of the inner peripheral surface of the crucible and slightly above the molten metal, and the lower end has a retention part for retaining the raw material for a certain period of time. Training equipment.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62277894A JPH0764672B2 (en) | 1987-11-02 | 1987-11-02 | Crystal growth equipment |
| EP88118267A EP0315156B1 (en) | 1987-11-02 | 1988-11-02 | Apparatus for growing crystals |
| DE8888118267T DE3865628D1 (en) | 1987-11-02 | 1988-11-02 | CRYSTAL GROWING DEVICE. |
| US07/521,683 US5080873A (en) | 1987-11-02 | 1990-05-10 | Apparatus for growing crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62277894A JPH0764672B2 (en) | 1987-11-02 | 1987-11-02 | Crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01119593A JPH01119593A (en) | 1989-05-11 |
| JPH0764672B2 true JPH0764672B2 (en) | 1995-07-12 |
Family
ID=17589767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62277894A Expired - Fee Related JPH0764672B2 (en) | 1987-11-02 | 1987-11-02 | Crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0764672B2 (en) |
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|---|---|---|---|---|
| USRE42814E1 (en) | 1998-10-30 | 2011-10-04 | Acqis Technology, Inc. | Password protected modular computer method and device |
| USRE42984E1 (en) | 1999-05-14 | 2011-11-29 | Acqis Technology, Inc. | Data security method and device for computer modules |
| US9529769B2 (en) | 1999-05-14 | 2016-12-27 | Acqis Llc | Computer system including CPU or peripheral bridge directly connected to a low voltage differential signal channel that communicates serial bits of a peripheral component interconnect bus transaction in opposite directions |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH089169Y2 (en) * | 1992-02-18 | 1996-03-13 | コマツ電子金属株式会社 | Single crystal manufacturing equipment |
| TW429273B (en) * | 1996-02-08 | 2001-04-11 | Shinetsu Handotai Kk | Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal |
| JP4148049B2 (en) * | 2003-07-15 | 2008-09-10 | 株式会社Ｓｕｍｃｏ | Raw material supply equipment |
| JP4403902B2 (en) * | 2004-07-09 | 2010-01-27 | 株式会社Ｓｕｍｃｏ | Raw material supply equipment |
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| JPS5688896A (en) * | 1979-12-22 | 1981-07-18 | Fujitsu Ltd | Growth of single crystal |
| JPS56164097A (en) * | 1980-05-23 | 1981-12-16 | Ricoh Co Ltd | Device for pulling up single crystal |
| DE3027262A1 (en) * | 1980-07-18 | 1982-02-11 | Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt | DRAWING PROCESSED, THIN-WALLED BEARING BUSHING |
| JPS57179095A (en) * | 1981-04-28 | 1982-11-04 | Tohoku Metal Ind Ltd | Method and apparatus for manufacturing single crystal |
| JPS5933552A (en) * | 1982-08-18 | 1984-02-23 | Toshiba Corp | Data processor |
| JPH0720288B2 (en) * | 1986-05-26 | 1995-03-06 | 松下電工株式会社 | Remote monitoring controller |
-
1987
- 1987-11-02 JP JP62277894A patent/JPH0764672B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE42814E1 (en) | 1998-10-30 | 2011-10-04 | Acqis Technology, Inc. | Password protected modular computer method and device |
| USRE43119E1 (en) | 1998-10-30 | 2012-01-17 | Acqis Llc | Password protected modular computer method and device |
| USRE42984E1 (en) | 1999-05-14 | 2011-11-29 | Acqis Technology, Inc. | Data security method and device for computer modules |
| USRE43171E1 (en) | 1999-05-14 | 2012-02-07 | Acqis Llc | Data security method and device for computer modules |
| US9529769B2 (en) | 1999-05-14 | 2016-12-27 | Acqis Llc | Computer system including CPU or peripheral bridge directly connected to a low voltage differential signal channel that communicates serial bits of a peripheral component interconnect bus transaction in opposite directions |
| US9529768B2 (en) | 1999-05-14 | 2016-12-27 | Acqis Llc | Computer system including CPU or peripheral bridge directly connected to a low voltage differential signal channel that communicates serial bits of a peripheral component interconnect bus transaction in opposite directions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01119593A (en) | 1989-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |