JPS5688896A - Growth of single crystal - Google Patents
Growth of single crystalInfo
- Publication number
- JPS5688896A JPS5688896A JP16723579A JP16723579A JPS5688896A JP S5688896 A JPS5688896 A JP S5688896A JP 16723579 A JP16723579 A JP 16723579A JP 16723579 A JP16723579 A JP 16723579A JP S5688896 A JPS5688896 A JP S5688896A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- melt
- crucible
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make it possible to grow a large single crystal with a uniform shape, by controlling the variable valve of the nozzle of a falling raw material depending upon a melt weight measured by a load cell, by pulling up a single crystal while keeping the liquid level of a melt in a crucible constant.
CONSTITUTION: In heating the platinum crucible 7 by high-frequency induction heating to melt a raw material and growing a single crystal, when the powdery raw material is dropped and fed while the reservoir 4 of the powdery raw material being vibrated by the oscillator 5, the feed of the raw material is regulated by controlling the variable valve 3 equipped at the nozzle part 6 of the drop of the raw material depending up a melt weight measured by the load cell 1 and the raw material is fed to the melting area a separated by the dividing plate 8 in the crucible 7. After melting, the raw material is transferred to the area 10 for pulling up the single crystal, and the single crystal 11 is grown with the surface level of a melt in the crucible 7 kept at costant. Consequently, fractures caused by the reduction in the melt amount is prevented and the growth of a large single crystal with a uniform shape is made possible.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16723579A JPS5688896A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16723579A JPS5688896A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5688896A true JPS5688896A (en) | 1981-07-18 |
Family
ID=15845951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16723579A Pending JPS5688896A (en) | 1979-12-22 | 1979-12-22 | Growth of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688896A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130195A (en) * | 1982-01-27 | 1983-08-03 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystalline silicon |
| JPH01119594A (en) * | 1987-11-02 | 1989-05-11 | Mitsubishi Metal Corp | Crystal growing device |
| JPH01119593A (en) * | 1987-11-02 | 1989-05-11 | Mitsubishi Metal Corp | Crystal growing device |
| JPH01148780A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Granular body feeder |
| US5087429A (en) * | 1988-04-28 | 1992-02-11 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
| US5087321A (en) * | 1987-12-08 | 1992-02-11 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
| US20130133567A1 (en) * | 2003-11-03 | 2013-05-30 | Memc Electronic Materials, Inc. | Systems and processes for continuous growing of ingots |
| CN103510155A (en) * | 2012-06-27 | 2014-01-15 | 丰田合成株式会社 | Semiconductor crystal removal apparatus and production method for semiconductor crystal |
-
1979
- 1979-12-22 JP JP16723579A patent/JPS5688896A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130195A (en) * | 1982-01-27 | 1983-08-03 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystalline silicon |
| JPH034517B2 (en) * | 1982-01-27 | 1991-01-23 | Toshiba Ceramics Co | |
| JPH01119594A (en) * | 1987-11-02 | 1989-05-11 | Mitsubishi Metal Corp | Crystal growing device |
| JPH01119593A (en) * | 1987-11-02 | 1989-05-11 | Mitsubishi Metal Corp | Crystal growing device |
| JPH0723277B2 (en) * | 1987-11-02 | 1995-03-15 | 三菱マテリアル株式会社 | Crystal growth equipment |
| JPH01148780A (en) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | Granular body feeder |
| US5087321A (en) * | 1987-12-08 | 1992-02-11 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
| US5087429A (en) * | 1988-04-28 | 1992-02-11 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
| US20130133567A1 (en) * | 2003-11-03 | 2013-05-30 | Memc Electronic Materials, Inc. | Systems and processes for continuous growing of ingots |
| KR101279709B1 (en) * | 2004-02-27 | 2013-06-27 | 솔라익스 인코퍼레이티드 | System for continuous growing of monocrystalline silicon |
| KR101279736B1 (en) * | 2004-02-27 | 2013-06-27 | 솔라익스 인코퍼레이티드 | System for continuous growing of monocrystalline silicon |
| KR101279756B1 (en) * | 2004-02-27 | 2013-07-04 | 솔라익스 인코퍼레이티드 | System for continuous growing of monocrystalline silicon |
| CN103510155A (en) * | 2012-06-27 | 2014-01-15 | 丰田合成株式会社 | Semiconductor crystal removal apparatus and production method for semiconductor crystal |
| US9388506B2 (en) | 2012-06-27 | 2016-07-12 | Toyoda Gosei Co., Ltd. | Semiconductor crystal removal apparatus and production method for semiconductor crystal |
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