JPS54122682A - Single crystal growing device - Google Patents

Single crystal growing device

Info

Publication number
JPS54122682A
JPS54122682A JP2931978A JP2931978A JPS54122682A JP S54122682 A JPS54122682 A JP S54122682A JP 2931978 A JP2931978 A JP 2931978A JP 2931978 A JP2931978 A JP 2931978A JP S54122682 A JPS54122682 A JP S54122682A
Authority
JP
Japan
Prior art keywords
melt
gap
crucible
crystal
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2931978A
Other languages
Japanese (ja)
Other versions
JPS5850957B2 (en
Inventor
Masayuki Watanabe
Jisaburo Ushizawa
Keijiro Hirahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53029319A priority Critical patent/JPS5850957B2/en
Publication of JPS54122682A publication Critical patent/JPS54122682A/en
Publication of JPS5850957B2 publication Critical patent/JPS5850957B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE: To provide a single crystal growing device by which stable single crystals of good quality can be obtd. by constituting the inner wall of a platelike member at least at the opening part for growing crystals placed on a melt of crystal raw material with an inorg. compsn. capable of separating from the melt well.
CONSTITUTION: Platelike member 21 having round opening 21a is made of compsn. contg. one or more out of BN, Si3N4 and AlN, and one or more out of SiO2, MgO, boron phosphate, etc. On the other hand, quartz crucible 23 is put in high press. container 22 filled with inert gas, and carbon susceptor 24 and heaters 25 are placed round crucible 23. Crystal raw material GaP is charged into crucible 23, a capsulating material B2O3 is charged on the GaP, and member 21 is mounted. The crucible is then heated to 1500W1600°C to melt the B2O3 and GaP, arranging Ga melt 26, member 21 and B2O3 melt 27 in layers. GaP seed crystals 29 giving a crystal growing face of a desired crystal orientation are attached to the tip of rotary shaft 28 perpendicular to the surface of melt 26 to grow GaP single crystals 30 by pulling.
COPYRIGHT: (C)1979,JPO&Japio
JP53029319A 1978-03-16 1978-03-16 Single crystal growth equipment Expired JPS5850957B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53029319A JPS5850957B2 (en) 1978-03-16 1978-03-16 Single crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53029319A JPS5850957B2 (en) 1978-03-16 1978-03-16 Single crystal growth equipment

Publications (2)

Publication Number Publication Date
JPS54122682A true JPS54122682A (en) 1979-09-22
JPS5850957B2 JPS5850957B2 (en) 1983-11-14

Family

ID=12272891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53029319A Expired JPS5850957B2 (en) 1978-03-16 1978-03-16 Single crystal growth equipment

Country Status (1)

Country Link
JP (1) JPS5850957B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58104096A (en) * 1981-10-23 1983-06-21 Toshiba Ceramics Co Ltd Drawing-up device for silicon single crystal
US4519966A (en) * 1982-12-24 1985-05-28 W. C. Heraeus Gmbh Low-contamination AlN crucible for monocrystal pulling and method
US4561486A (en) * 1981-04-30 1985-12-31 Hoxan Corporation Method for fabricating polycrystalline silicon wafer
US4668481A (en) * 1984-04-23 1987-05-26 Kabushiki Kaisha Toshiba Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
CN108191441A (en) * 2018-03-12 2018-06-22 武汉科技大学 Dry quenched coke oven chute pillar enhances castable and preparation method thereof with aluminium nitride

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081460U (en) * 1991-06-10 1996-10-11 良久 大窪 calendar

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561486A (en) * 1981-04-30 1985-12-31 Hoxan Corporation Method for fabricating polycrystalline silicon wafer
JPS58104096A (en) * 1981-10-23 1983-06-21 Toshiba Ceramics Co Ltd Drawing-up device for silicon single crystal
US4519966A (en) * 1982-12-24 1985-05-28 W. C. Heraeus Gmbh Low-contamination AlN crucible for monocrystal pulling and method
US4668481A (en) * 1984-04-23 1987-05-26 Kabushiki Kaisha Toshiba Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
CN108191441A (en) * 2018-03-12 2018-06-22 武汉科技大学 Dry quenched coke oven chute pillar enhances castable and preparation method thereof with aluminium nitride

Also Published As

Publication number Publication date
JPS5850957B2 (en) 1983-11-14

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