JPS54122682A - Single crystal growing device - Google Patents
Single crystal growing deviceInfo
- Publication number
- JPS54122682A JPS54122682A JP2931978A JP2931978A JPS54122682A JP S54122682 A JPS54122682 A JP S54122682A JP 2931978 A JP2931978 A JP 2931978A JP 2931978 A JP2931978 A JP 2931978A JP S54122682 A JPS54122682 A JP S54122682A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- gap
- crucible
- crystal
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Ceramic Products (AREA)
Abstract
PURPOSE: To provide a single crystal growing device by which stable single crystals of good quality can be obtd. by constituting the inner wall of a platelike member at least at the opening part for growing crystals placed on a melt of crystal raw material with an inorg. compsn. capable of separating from the melt well.
CONSTITUTION: Platelike member 21 having round opening 21a is made of compsn. contg. one or more out of BN, Si3N4 and AlN, and one or more out of SiO2, MgO, boron phosphate, etc. On the other hand, quartz crucible 23 is put in high press. container 22 filled with inert gas, and carbon susceptor 24 and heaters 25 are placed round crucible 23. Crystal raw material GaP is charged into crucible 23, a capsulating material B2O3 is charged on the GaP, and member 21 is mounted. The crucible is then heated to 1500W1600°C to melt the B2O3 and GaP, arranging Ga melt 26, member 21 and B2O3 melt 27 in layers. GaP seed crystals 29 giving a crystal growing face of a desired crystal orientation are attached to the tip of rotary shaft 28 perpendicular to the surface of melt 26 to grow GaP single crystals 30 by pulling.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53029319A JPS5850957B2 (en) | 1978-03-16 | 1978-03-16 | Single crystal growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53029319A JPS5850957B2 (en) | 1978-03-16 | 1978-03-16 | Single crystal growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54122682A true JPS54122682A (en) | 1979-09-22 |
JPS5850957B2 JPS5850957B2 (en) | 1983-11-14 |
Family
ID=12272891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53029319A Expired JPS5850957B2 (en) | 1978-03-16 | 1978-03-16 | Single crystal growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5850957B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58104096A (en) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | Drawing-up device for silicon single crystal |
US4519966A (en) * | 1982-12-24 | 1985-05-28 | W. C. Heraeus Gmbh | Low-contamination AlN crucible for monocrystal pulling and method |
US4561486A (en) * | 1981-04-30 | 1985-12-31 | Hoxan Corporation | Method for fabricating polycrystalline silicon wafer |
US4668481A (en) * | 1984-04-23 | 1987-05-26 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
CN108191441A (en) * | 2018-03-12 | 2018-06-22 | 武汉科技大学 | Dry quenched coke oven chute pillar enhances castable and preparation method thereof with aluminium nitride |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH081460U (en) * | 1991-06-10 | 1996-10-11 | 良久 大窪 | calendar |
-
1978
- 1978-03-16 JP JP53029319A patent/JPS5850957B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4561486A (en) * | 1981-04-30 | 1985-12-31 | Hoxan Corporation | Method for fabricating polycrystalline silicon wafer |
JPS58104096A (en) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | Drawing-up device for silicon single crystal |
US4519966A (en) * | 1982-12-24 | 1985-05-28 | W. C. Heraeus Gmbh | Low-contamination AlN crucible for monocrystal pulling and method |
US4668481A (en) * | 1984-04-23 | 1987-05-26 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
CN108191441A (en) * | 2018-03-12 | 2018-06-22 | 武汉科技大学 | Dry quenched coke oven chute pillar enhances castable and preparation method thereof with aluminium nitride |
Also Published As
Publication number | Publication date |
---|---|
JPS5850957B2 (en) | 1983-11-14 |
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