JPS5751195A - Preparation of single crystal - Google Patents

Preparation of single crystal

Info

Publication number
JPS5751195A
JPS5751195A JP12451280A JP12451280A JPS5751195A JP S5751195 A JPS5751195 A JP S5751195A JP 12451280 A JP12451280 A JP 12451280A JP 12451280 A JP12451280 A JP 12451280A JP S5751195 A JPS5751195 A JP S5751195A
Authority
JP
Japan
Prior art keywords
single crystal
molten
compound
controlling
encapsulation material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12451280A
Other languages
Japanese (ja)
Other versions
JPS5850958B2 (en
Inventor
Yoshihiro Kokubu
Masayuki Watanabe
Masakatsu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12451280A priority Critical patent/JPS5850958B2/en
Publication of JPS5751195A publication Critical patent/JPS5751195A/en
Publication of JPS5850958B2 publication Critical patent/JPS5850958B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To prepare a high-quality single crystal, at low cost, by placing a member for controlling the shape of the single crystal and made of carbon coated with Si3N4 or BN, between the molten raw material and the encapsulation material.
CONSTITUTION: The crucible 2 supported by the susceptor 2' in a high pressure vessel 1 is charged with a compound having high decomposition pressure (e.g. GaP), a member 9 for controlling the shape of the single crystal and made of carbon coated with Si3N4 or BN, and an encapsulation material. The contents of the vessel 1 are pressurized to ≥45 atm with an inert gas, and heated with the heater 5 to form the molten liquid of the high decomposition pressure compound 3 and the molten encapsulation material 4. The seed crystal 6 attached to the rotary jig 7 is brought into contact with the molten liquid 3 through the molten material 4, and the single crystal is pulled up through the opening of the controlling member 9 to the direction of the arrow under rotation, to form the single crystal 8 of the compound having high decomposition pressure.
COPYRIGHT: (C)1982,JPO&Japio
JP12451280A 1980-09-10 1980-09-10 Single crystal manufacturing method Expired JPS5850958B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12451280A JPS5850958B2 (en) 1980-09-10 1980-09-10 Single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12451280A JPS5850958B2 (en) 1980-09-10 1980-09-10 Single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS5751195A true JPS5751195A (en) 1982-03-25
JPS5850958B2 JPS5850958B2 (en) 1983-11-14

Family

ID=14887316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12451280A Expired JPS5850958B2 (en) 1980-09-10 1980-09-10 Single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JPS5850958B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60131892A (en) * 1983-12-19 1985-07-13 Mitsubishi Monsanto Chem Co Growth device of single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60131892A (en) * 1983-12-19 1985-07-13 Mitsubishi Monsanto Chem Co Growth device of single crystal

Also Published As

Publication number Publication date
JPS5850958B2 (en) 1983-11-14

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