JPS5637296A - Epitaxially growing apparatus - Google Patents
Epitaxially growing apparatusInfo
- Publication number
- JPS5637296A JPS5637296A JP11398079A JP11398079A JPS5637296A JP S5637296 A JPS5637296 A JP S5637296A JP 11398079 A JP11398079 A JP 11398079A JP 11398079 A JP11398079 A JP 11398079A JP S5637296 A JPS5637296 A JP S5637296A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- gas
- guide
- silicon carbide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To accurately adjust the flow of a vapor-depositing gas with the titled apparatus by forming a surface layer of a gas flow adjusting guide and a susceptor with the same material, placing the guide near the susceptor, and improving the form, etc. of the guide.
CONSTITUTION: Susceptor 3 is made of silicon carbide, and gas flow adjusting guide 10 is artificial graphite substrate 13 with silicon carbide film 12 covered on the exposed surface. A plurality of waters 9...9 are set on the side wall of barrel type susceptor 3, and by supplying an electric current to high frequency induction coil 8, susceptor 3 made of silicon carbide generates heat to heat wafers 9 on susceptor 3. While rotating susceptor 3 with shaft 4, a predetermined amount of silicon gas is then fed from gas spouting surface 16 of circular vapor-depositing gas introducing member 15. Since arched guide 10 has been attached to the top of susceptor 3 opposite to spouting surface 16, the silicon gas is uniformly supplied to all of the wafers.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637296A true JPS5637296A (en) | 1981-04-10 |
| JPS6159279B2 JPS6159279B2 (en) | 1986-12-15 |
Family
ID=14626030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11398079A Granted JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637296A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61153337U (en) * | 1985-03-14 | 1986-09-22 | ||
| JPS6394633A (en) * | 1986-10-09 | 1988-04-25 | Hitachi Electronics Eng Co Ltd | Vapor phase reaction device |
| JPH01294596A (en) * | 1988-05-20 | 1989-11-28 | Toshiba Ceramics Co Ltd | Fabricated barrel-type susceptor |
| JP2002343723A (en) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | Semiconductor manufacturing equipment and method for manufacturing compound semiconductor |
-
1979
- 1979-09-05 JP JP11398079A patent/JPS5637296A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61153337U (en) * | 1985-03-14 | 1986-09-22 | ||
| JPH0445237Y2 (en) * | 1985-03-14 | 1992-10-23 | ||
| JPS6394633A (en) * | 1986-10-09 | 1988-04-25 | Hitachi Electronics Eng Co Ltd | Vapor phase reaction device |
| JPH01294596A (en) * | 1988-05-20 | 1989-11-28 | Toshiba Ceramics Co Ltd | Fabricated barrel-type susceptor |
| JP2002343723A (en) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | Semiconductor manufacturing equipment and method for manufacturing compound semiconductor |
| JP4606642B2 (en) * | 2001-05-17 | 2011-01-05 | 住友化学株式会社 | Semiconductor manufacturing apparatus and compound semiconductor manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159279B2 (en) | 1986-12-15 |
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