JPS5756036A - Plasma chemical vapor phase reactor - Google Patents

Plasma chemical vapor phase reactor

Info

Publication number
JPS5756036A
JPS5756036A JP13123480A JP13123480A JPS5756036A JP S5756036 A JPS5756036 A JP S5756036A JP 13123480 A JP13123480 A JP 13123480A JP 13123480 A JP13123480 A JP 13123480A JP S5756036 A JPS5756036 A JP S5756036A
Authority
JP
Japan
Prior art keywords
films
plasma chemical
vapor phase
chemical vapor
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13123480A
Other languages
Japanese (ja)
Other versions
JPS6329583B2 (en
Inventor
Hiroji Harada
Shinichi Sato
Hayaaki Fukumoto
Hirozo Takano
Hideo Kotani
Shinpei Kayano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13123480A priority Critical patent/JPS5756036A/en
Publication of JPS5756036A publication Critical patent/JPS5756036A/en
Publication of JPS6329583B2 publication Critical patent/JPS6329583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To improve the growth rate of films by providing magnets generating magnetic field parallel with the surface of the electrodes of a plasma chemical vapor phase reactor in the neighborhood of the surface of one of the electrodes of said device. CONSTITUTION:In a plasma chemical reactor producing semiconductor films such as silicon nitride films or the like, magnets 12, 12' are provided near the surface of one substrate 7, so that the magnetic lines 13 of force created by these are made parallel with the surface near the surface of a silicon wafer. Then, the electrons generated by plasma discharge are confined around said magnetic lines of force and therefore the density of plasma is icreased considerably near the magnetic lines of force, that is, on the surface of the silicon wafer, and the growth rate of the films is increased.
JP13123480A 1980-09-20 1980-09-20 Plasma chemical vapor phase reactor Granted JPS5756036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13123480A JPS5756036A (en) 1980-09-20 1980-09-20 Plasma chemical vapor phase reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13123480A JPS5756036A (en) 1980-09-20 1980-09-20 Plasma chemical vapor phase reactor

Publications (2)

Publication Number Publication Date
JPS5756036A true JPS5756036A (en) 1982-04-03
JPS6329583B2 JPS6329583B2 (en) 1988-06-14

Family

ID=15053141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13123480A Granted JPS5756036A (en) 1980-09-20 1980-09-20 Plasma chemical vapor phase reactor

Country Status (1)

Country Link
JP (1) JPS5756036A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126597A (en) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film
JPS61179872A (en) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド Apparatus and method for magnetron enhanced plasma auxiliarytype chemical vapor deposition
JPS62124277A (en) * 1985-11-22 1987-06-05 Ulvac Corp Plasma cvd device
JPS6328872A (en) * 1986-07-22 1988-02-06 Ulvac Corp Plasma cvd device
JPS6328873A (en) * 1986-07-22 1988-02-06 Ulvac Corp Plasma cvd device
US4863756A (en) * 1985-06-14 1989-09-05 Leybold Aktiengesellschaft Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4649605B2 (en) * 2004-08-19 2011-03-16 国立大学法人名古屋大学 Plasma CVD apparatus and method of manufacturing hard carbon film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5648238A (en) * 1979-09-27 1981-05-01 Mitsubishi Electric Corp Plasma reaction device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge
JPS5648238A (en) * 1979-09-27 1981-05-01 Mitsubishi Electric Corp Plasma reaction device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126597A (en) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film
JPS61179872A (en) * 1984-10-25 1986-08-12 アプライド　マテリアルズ　インコ−ポレ−テツド Apparatus and method for magnetron enhanced plasma auxiliarytype chemical vapor deposition
US4863756A (en) * 1985-06-14 1989-09-05 Leybold Aktiengesellschaft Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma
JPS62124277A (en) * 1985-11-22 1987-06-05 Ulvac Corp Plasma cvd device
JPS6328872A (en) * 1986-07-22 1988-02-06 Ulvac Corp Plasma cvd device
JPS6328873A (en) * 1986-07-22 1988-02-06 Ulvac Corp Plasma cvd device
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus
US5019117A (en) * 1986-12-29 1991-05-28 Sumitomo Metal Industries Ltd. Plasma apparatus

Also Published As

Publication number Publication date
JPS6329583B2 (en) 1988-06-14

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