JPS5776187A - Treatment by etching - Google Patents
Treatment by etchingInfo
- Publication number
- JPS5776187A JPS5776187A JP15250580A JP15250580A JPS5776187A JP S5776187 A JPS5776187 A JP S5776187A JP 15250580 A JP15250580 A JP 15250580A JP 15250580 A JP15250580 A JP 15250580A JP S5776187 A JPS5776187 A JP S5776187A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- reactor container
- container
- turned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a semiconductor element with a wiring film free of disconnection and cracking in the neighborhood of opening by a method in which an electrode on which a base plate to be treated is placed in turned in an inclined manner to a counter electrode and parallel magnetic fields are provided to electric field between the electrodes. CONSTITUTION:In a reactor container 11, an electrode 16 on which a semiconductor base plate 15 to be treated is placed and a counter electrode 14 are provided. The reactor container 11 is evacuated, and a high voltage is applied between the electrodes 14 and 16 by a high frequency oscillator 18 while introducing CHF3 gas into the container 11 through a duct 12. At this time, the electrode 16 is turned in an inclined manner to the electrode 14 in such a way that parallel magnetic fields can act on electric field produced between the electrodes 14 and 16 by copper coil 19, for example, surrounding the outer wall of the reactor container 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15250580A JPS5776187A (en) | 1980-10-30 | 1980-10-30 | Treatment by etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15250580A JPS5776187A (en) | 1980-10-30 | 1980-10-30 | Treatment by etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776187A true JPS5776187A (en) | 1982-05-13 |
Family
ID=15541918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15250580A Pending JPS5776187A (en) | 1980-10-30 | 1980-10-30 | Treatment by etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776187A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6056076A (en) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | Sputter etching device |
JPS61119684A (en) * | 1984-11-14 | 1986-06-06 | Ulvac Corp | Sputter etching device |
-
1980
- 1980-10-30 JP JP15250580A patent/JPS5776187A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6056076A (en) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | Sputter etching device |
JPS61119684A (en) * | 1984-11-14 | 1986-06-06 | Ulvac Corp | Sputter etching device |
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