JPS6432631A - Etching device - Google Patents

Etching device

Info

Publication number
JPS6432631A
JPS6432631A JP18761687A JP18761687A JPS6432631A JP S6432631 A JPS6432631 A JP S6432631A JP 18761687 A JP18761687 A JP 18761687A JP 18761687 A JP18761687 A JP 18761687A JP S6432631 A JPS6432631 A JP S6432631A
Authority
JP
Japan
Prior art keywords
sample base
generated
power
frequency power
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18761687A
Other languages
Japanese (ja)
Inventor
Naoyoshi Fujiwara
Kotaro Hamashima
Masanobu Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18761687A priority Critical patent/JPS6432631A/en
Publication of JPS6432631A publication Critical patent/JPS6432631A/en
Pending legal-status Critical Current

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Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To conduct etching having high anisotropy at high speed by forming a high-frequency electric field between a wafer and an upper plate by a high-frequency power and shaping a microwave electromagnetic field in the upper space of the wafer. CONSTITUTION:A magnetic field coil 14 is conducted for generating electrocyclotron discharge, and a magnetic field having 875 Gauss is generated at a certain position in the upper section of a sample base 6. When the sample base 6 is supplied with power through a high-frequency power 9 and a capacitor 10, discharge is generated between the sample base 6 and an upper plate 16, and an ion sheath having a certain potential is generated on the sample base 6. Ions are accelerated by the potential, but ion energy at that time is approximately proportional to high-frequency power. Consequently, a large number of ions are acquired by small power. Accordingly, etching having high anisotropy is performed at high speed.
JP18761687A 1987-07-29 1987-07-29 Etching device Pending JPS6432631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18761687A JPS6432631A (en) 1987-07-29 1987-07-29 Etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18761687A JPS6432631A (en) 1987-07-29 1987-07-29 Etching device

Publications (1)

Publication Number Publication Date
JPS6432631A true JPS6432631A (en) 1989-02-02

Family

ID=16209225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18761687A Pending JPS6432631A (en) 1987-07-29 1987-07-29 Etching device

Country Status (1)

Country Link
JP (1) JPS6432631A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230729A (en) * 1989-03-03 1990-09-13 Fujitsu Ltd Semiconductor manufacture apparatus
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
WO1998021746A1 (en) * 1996-11-14 1998-05-22 Tokyo Electron Limited Method of plasma treatment
US6376388B1 (en) * 1993-07-16 2002-04-23 Fujitsu Limited Dry etching with reduced damage to MOS device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
JPH02230729A (en) * 1989-03-03 1990-09-13 Fujitsu Ltd Semiconductor manufacture apparatus
US6376388B1 (en) * 1993-07-16 2002-04-23 Fujitsu Limited Dry etching with reduced damage to MOS device
US6884670B2 (en) 1993-07-16 2005-04-26 Fujitsu Limited Dry etching with reduced damage to MOS device
WO1998021746A1 (en) * 1996-11-14 1998-05-22 Tokyo Electron Limited Method of plasma treatment
US6320154B1 (en) 1996-11-14 2001-11-20 Tokyo Electron Limited Plasma processing method

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