JPS6432631A - Etching device - Google Patents
Etching deviceInfo
- Publication number
- JPS6432631A JPS6432631A JP18761687A JP18761687A JPS6432631A JP S6432631 A JPS6432631 A JP S6432631A JP 18761687 A JP18761687 A JP 18761687A JP 18761687 A JP18761687 A JP 18761687A JP S6432631 A JPS6432631 A JP S6432631A
- Authority
- JP
- Japan
- Prior art keywords
- sample base
- generated
- power
- frequency power
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To conduct etching having high anisotropy at high speed by forming a high-frequency electric field between a wafer and an upper plate by a high-frequency power and shaping a microwave electromagnetic field in the upper space of the wafer. CONSTITUTION:A magnetic field coil 14 is conducted for generating electrocyclotron discharge, and a magnetic field having 875 Gauss is generated at a certain position in the upper section of a sample base 6. When the sample base 6 is supplied with power through a high-frequency power 9 and a capacitor 10, discharge is generated between the sample base 6 and an upper plate 16, and an ion sheath having a certain potential is generated on the sample base 6. Ions are accelerated by the potential, but ion energy at that time is approximately proportional to high-frequency power. Consequently, a large number of ions are acquired by small power. Accordingly, etching having high anisotropy is performed at high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18761687A JPS6432631A (en) | 1987-07-29 | 1987-07-29 | Etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18761687A JPS6432631A (en) | 1987-07-29 | 1987-07-29 | Etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6432631A true JPS6432631A (en) | 1989-02-02 |
Family
ID=16209225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18761687A Pending JPS6432631A (en) | 1987-07-29 | 1987-07-29 | Etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6432631A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02230729A (en) * | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | Semiconductor manufacture apparatus |
US5133825A (en) * | 1987-04-08 | 1992-07-28 | Hi Tachi, Ltd. | Plasma generating apparatus |
WO1998021746A1 (en) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Method of plasma treatment |
US6376388B1 (en) * | 1993-07-16 | 2002-04-23 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
-
1987
- 1987-07-29 JP JP18761687A patent/JPS6432631A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5133825A (en) * | 1987-04-08 | 1992-07-28 | Hi Tachi, Ltd. | Plasma generating apparatus |
JPH02230729A (en) * | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | Semiconductor manufacture apparatus |
US6376388B1 (en) * | 1993-07-16 | 2002-04-23 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
WO1998021746A1 (en) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Method of plasma treatment |
US6320154B1 (en) | 1996-11-14 | 2001-11-20 | Tokyo Electron Limited | Plasma processing method |
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