JPH02230729A - Semiconductor manufacture apparatus - Google Patents
Semiconductor manufacture apparatusInfo
- Publication number
- JPH02230729A JPH02230729A JP5164689A JP5164689A JPH02230729A JP H02230729 A JPH02230729 A JP H02230729A JP 5164689 A JP5164689 A JP 5164689A JP 5164689 A JP5164689 A JP 5164689A JP H02230729 A JPH02230729 A JP H02230729A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- processing
- source
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000012545 processing Methods 0.000 claims description 50
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 2
- 235000017491 Bambusa tulda Nutrition 0.000 description 2
- 241001330002 Bambuseae Species 0.000 description 2
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 2
- 239000011425 bamboo Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 108010011222 cyclo(Arg-Pro) Proteins 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
プラズマ処理を行う半導体製造装置に関し、小型化及び
処理効率の向上を可能とすることを目的とし、
被処理物が載置されるス−アージが配された単一の処理
室と、複数の孔を有する平板により仕切られて上記処理
室の上方に配されたガス発光室と、上記単一の処理室に
連通接続された真空排気装置と、上記ガス発光室に処理
ガスを導入する処理ガス導入口と、上記ガス発光室と接
続して設けてあり、該ガス発光室内の処理ガスを発光さ
せる冫イク口波源と、上記ステージと上記平板との間で
処理ガスをプラズマ化させる高周波源と、上記マイク０
波源と上記高周波源とを順次選択的に駆動させる制御手
段とを備えて構成する。[Detailed Description of the Invention] [Summary] For the purpose of miniaturizing and improving processing efficiency regarding semiconductor manufacturing equipment that performs plasma processing, a suage on which a workpiece is placed is arranged. a single processing chamber, a gas luminescence chamber partitioned by a flat plate having a plurality of holes and disposed above the processing chamber, a vacuum exhaust device connected to the single processing chamber, and the gas luminescence chamber. A processing gas inlet for introducing a processing gas into the chamber, an output wave source that is provided in connection with the gas emission chamber and causes the processing gas in the gas emission chamber to emit light, and between the stage and the flat plate. A high frequency source that turns the processing gas into plasma and the microphone 0
The apparatus includes a wave source and a control means for sequentially and selectively driving the high-frequency source.
本発明はプラズマ処理を行う半導体製造装置に関する。 The present invention relates to a semiconductor manufacturing apparatus that performs plasma processing.
半導体の製造工程の中には、第５図（Ａ）に示すエッチ
ングマスク１によりマスクされたウエハ２上のＳ！０２
膜３に対して、最初に同図（Ｂ）中符号４で示すように
等方性プラズマエッチングを行ない、次に同図（Ｃ）中
符号５で示すように異方性プラズマエッチングを行う場
合がある。During the semiconductor manufacturing process, S! on the wafer 2 masked by the etching mask 1 shown in FIG. 02
When film 3 is first subjected to isotropic plasma etching as shown by reference numeral 4 in FIG. There is.
半導体！ｌＩ造装置は上記のような処理を能率良く行う
ことが可能で且つ小型の構成であることが望ましい。semiconductor! It is desirable that the II manufacturing apparatus be able to perform the above-described processing efficiently and be of a small size.
〔従来の技術） 第６図は従来の半導体製造装置１０を示す。[Conventional technology] FIG. 6 shows a conventional semiconductor manufacturing apparatus 10. As shown in FIG.
符号１１．１２で示すように処理室が二つ並設してある
。As shown by reference numerals 11 and 12, two processing chambers are arranged side by side.
各処理室１１．１２毎に一の処理ガス導入口１３．１４
と−の真空排気装置１５．１６が設けてある。One processing gas inlet 13.14 for each processing chamber 11.12
and - vacuum evacuation devices 15 and 16 are provided.
１７はマイクロ波源であり、処理室１１の上方のガス発
光室１８と接続してある。Reference numeral 17 denotes a microwave source, which is connected to a gas emission chamber 18 above the processing chamber 11.
１９は高周波源であり、処理室１２と接続してある。19 is a high frequency source, which is connected to the processing chamber 12.
第５図（Ａ）に示す被処理物２０は、最初に処理室１１
内でダウンストリーム方式で等方竹プラス？エッチング
され、その後、別の処理室１２内に移されて異方性プラ
ズマエッチングされる。The workpiece 20 shown in FIG. 5(A) is first placed in the processing chamber 11.
Isometric bamboo plus in downstream method? It is etched and then transferred to another processing chamber 12 for anisotropic plasma etching.
上記の製造装置１０は、処理室を二つ備えたものであり
、大型化であると共に、高価である。The manufacturing apparatus 10 described above is equipped with two processing chambers, is large in size, and is expensive.
また、被処理物２０を一の処理室１１から別の処理室１
２へ移す工程があり、製造の能率がよくない。Further, the object to be processed 20 is transferred from one processing chamber 11 to another processing chamber 1.
There is a step to transfer to step 2, which makes manufacturing inefficient.
本発明は小型化及び処理効率の向上を可能と覆る半導体
製造装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor manufacturing apparatus that enables miniaturization and improved processing efficiency.
第１図は本発明の半導体製造装置の原理構成図である。 FIG. 1 is a diagram showing the principle configuration of a semiconductor manufacturing apparatus according to the present invention.
半導体製造装置３０は、
被処理物２（ｌ戟置されるステージ３１が配された単一
の処理室３２と、
複数の孔３３を有する平板３４により仕切られて上記処
理室３２の上方に配されたガス発光室３５と、
上記単一の処理室３２に連通接続された真空排気装置３
６と、
上記ガス発光室３５に処理ガスを導入する処理ガス導入
口３７と、
上記ガス発光室３５と接続して設けてあり、該ガス発光
室３５内の処理ガスを発光させるマイクロ波源３８と、
上記ステージ３１と上記平板３４との間で処理ガスをプ
ラズマ化させる高周波源３９と、上記マイクロ波源３８
と上記高周波源３９とを順次選択的に駆動させる制御手
段４０を備えてなる。The semiconductor manufacturing apparatus 30 includes a single processing chamber 32 in which a stage 31 on which a workpiece 2 (l) is placed, and a flat plate 34 having a plurality of holes 33 partitions the processing chamber 32 and disposes the processing chamber 32 above the processing chamber 32. a gas emission chamber 35, and a vacuum evacuation device 3 connected to the single processing chamber 32.
6, a processing gas inlet 37 for introducing processing gas into the gas luminescence chamber 35, and a microwave source 38 which is provided in connection with the gas luminescence chamber 35 and causes the processing gas in the gas luminescence chamber 35 to emit light. , a high frequency source 39 that turns the processing gas into plasma between the stage 31 and the flat plate 34, and the microwave source 38.
and a control means 40 for sequentially and selectively driving the high frequency source 39 and the high frequency source 39.
処理室３２が単一であるため、装置３０は小型に構成さ
れ、安価となる。Since the processing chamber 32 is single, the apparatus 30 is constructed in a small size and is inexpensive.
単一の処理室３２にマイクロ波源３８及び高周波源３９
が設けてあり、両名の駆動を制御手段４０により制御す
る構成により、前記等方性エッチングと異方竹エッチン
グとが同一処理室３２内で可能となる。A microwave source 38 and a high frequency source 39 in a single processing chamber 32
The isotropic etching and anisotropic bamboo etching can be performed in the same processing chamber 32 by controlling the driving of both by the control means 40.
（実施例）
第２図は本発明の一実施例になる半導体製造装置５０を
示す。図中、第１図に示す構成部分と対応する部分には
同一符号を付ツ、，
高周波源３９はステージ３１とアースとの間に接続して
ある。(Embodiment) FIG. 2 shows a semiconductor manufacturing apparatus 50 according to an embodiment of the present invention. In the figure, parts corresponding to those shown in FIG.
マイクロ波源３８は、導波管５１及びマイクロ波透過窓
５２を介してガス発光室３５に接続してある。The microwave source 38 is connected to the gas luminescence chamber 35 via a waveguide 51 and a microwave transparent window 52.
５６は被処理物２０を押し上げるリフトビン、５７はス
アージ３１の温度を調節するステージ温度調節器である
。56 is a lift bin that lifts up the object 20 to be processed, and 57 is a stage temperature controller that adjusts the temperature of the suurge 31.
５８は真空予備室であり、処理室３２と連通して設けて
ある。５９．６０はゲート弁、６１は真空排気装置、６
２は予備室５８を大気圧とするためのボートである。６
３は被処理物２０を４，ヤリアから処理室３２内へ搬送
するアームである。58 is a vacuum preliminary chamber, which is provided in communication with the processing chamber 32. 59. 60 is a gate valve, 61 is a vacuum exhaust device, 6
2 is a boat for bringing the preliminary chamber 58 to atmospheric pressure. 6
Reference numeral 3 denotes an arm for transporting the object 20 to be processed from 4, Yaria into the processing chamber 32.
６４は被処理物２０のキャリア、６５は背降償構である
。64 is a carrier for the object to be processed 20, and 65 is a back-down compensation structure.
次に上記装置５０の動作について説明する，，まず、搬
送アーム６３により被処理物２０が４ヤリア６４より室
５８内に搬送され、更には処理室３２内に搬送されてス
テージ３１上にＩ！ハされる。Next, the operation of the apparatus 50 will be described. First, the workpiece 20 is transported by the transport arm 63 from the rear 64 into the chamber 58, and further into the processing chamber 32, and placed on the stage 31. It is done.
この状態で、第３図に示すように、ガスＣＦ４が導入口
３７よりガス発光室３５内に導入され、真空排気装置３
６により処理室３２内が真空圧とされる。ガスＣＦ４は
室３５内で分布が調整される。In this state, as shown in FIG. 3, gas CF4 is introduced into the gas emission chamber 35 through the inlet 37,
6, the inside of the processing chamber 32 is brought to a vacuum pressure. The distribution of the gas CF4 is adjusted within the chamber 35.
制御手段４０によりマイクロ波源３８が駆動され、マイ
クロ波が導波管５１，透過窓５２を通って室３５内のガ
スＣＦ４に作用する。The microwave source 38 is driven by the control means 40, and the microwave passes through the waveguide 51 and the transmission window 52 and acts on the gas CF4 in the chamber 35.
これにより、第３図中符号６６で示すように室３５内で
ガスＣＦＪが発光されて活性化される。As a result, the gas CFJ is emitted and activated within the chamber 35, as indicated by the reference numeral 66 in FIG.
活性化したガスＣＦａが矢印６７で示すように孔３３を
通して室３５より室３２内に均一にダウンストリームで
吹き出し、被処理物２０に作用し、第５図（Ｂ）に示す
等方性プラズマエッチングが行なわれる。これが第１の
プラズマ処理である。The activated gas CFa is uniformly blown downstream from the chamber 35 into the chamber 32 through the hole 33 as shown by an arrow 67, and acts on the object 20 to perform isotropic plasma etching as shown in FIG. 5(B). will be carried out. This is the first plasma treatment.
所定時間経過すると、制御手段４０により、マイクロ波
源３８が動作を停止され、代わって高周波源３９が作動
ざれる。ガスＣＩ−４の導入及び真空排気装置３６の動
作は継続する。After a predetermined period of time has elapsed, the microwave source 38 is deactivated by the control means 40, and the high frequency source 39 is activated instead. The introduction of gas CI-4 and the operation of the evacuation device 36 continue.
これにより、第４図中符号６８で足すように、高周波源
３９により、処理室３２内でガスＣＦ４が平板３４とス
テージ３１との間で活性化ざれる。As a result, gas CF4 is activated between the flat plate 34 and the stage 31 within the processing chamber 32 by the high frequency source 39, as indicated by reference numeral 68 in FIG.
活性化されたガスが第５図（Ｂ）の被処理物２ＯＡに作
用し、第５図（Ｃ）に示す異方性プラズマエッチングが
行われる。これが第２のプラズマ処理である。The activated gas acts on the object to be processed 2OA shown in FIG. 5(B), and anisotropic plasma etching shown in FIG. 5(C) is performed. This is the second plasma treatment.
その後、被処理物は、処理室３２の外部に搬出される。Thereafter, the object to be processed is carried out to the outside of the processing chamber 32.
なお、上記の装置５０の適用は上記のプラズマエッチン
グ処理に限定されるものではない。連続して行われる処
理、例えば第１のプラズマ処理がエッチング、第２のプ
ラズマ処理がレジストのアッシングの場合にも適用でき
る。Note that the application of the above apparatus 50 is not limited to the above plasma etching process. It can also be applied to processes that are performed successively, for example, when the first plasma process is etching and the second plasma process is resist ashing.
以上説明した様に、本発明によれば、処理室が単一であ
るため、従来に比べて大幅に小型化することが出来、且
つ低価格化を実現出来る。As explained above, according to the present invention, since there is a single processing chamber, it is possible to significantly reduce the size and reduce the cost compared to the conventional method.
また本発明の装置を使用することにより、二つの異なる
プラズマ処理を続けて行うことが出来、処理の効率を向
上させることが出来る。Further, by using the apparatus of the present invention, two different plasma treatments can be performed successively, and the efficiency of the treatment can be improved.
第１図は本発明の原理構成図、
第２図は本発明の半導体製造装置の一実施例を示す図、
第３図は等方性プラズマエッチング（第１のプラズマ処
［）時の状態を示す図、
第４図は異方性プラズマエッチング（第２のプラズマ処
理）時の状態を示す図、
第５因は被処理物のエッチングを説明する図、第６図は
従来例を示す図である。
図において、
３０は半導体製造装置、
３１はステージ、
３２は処理室、
３３は孔、
３４は平板、
３５Ｇまガス発光室、
３６は真空排気装置、
３７は処理ガス導入口、
３８は？イク口波源、
３９は高周波源、
４０は制郊手段、
５１は導波管、
５２はマイクロ波透過窓、
６６，
６８は活性化した状態、
６７は活性化したガスの流れ
を示す。FIG. 1 is a diagram showing the basic configuration of the present invention, FIG. 2 is a diagram showing an embodiment of the semiconductor manufacturing apparatus of the present invention, and FIG. 3 is a diagram showing the state during isotropic plasma etching (first plasma treatment). Figure 4 is a diagram showing the state during anisotropic plasma etching (second plasma treatment), the fifth factor is a diagram explaining the etching of the object to be processed, and Figure 6 is a diagram showing a conventional example. be. In the figure, 30 is semiconductor manufacturing equipment, 31 is a stage, 32 is a processing chamber, 33 is a hole, 34 is a flat plate, 35G gas emission chamber, 36 is a vacuum exhaust device, 37 is a processing gas inlet, and 38 is ? Reference numeral 39 indicates a high frequency source, 40 indicates a suppression means, 51 indicates a waveguide, 52 indicates a microwave transmission window, 66 and 68 indicate an activated state, and 67 indicates a flow of activated gas.
Claims (1)
れた単一の処理室（３２）と、 複数の孔（３３）を有する平板（３４）により仕切られ
て上記処理室の上方に配されたガス発光室（３５）と、 上記単一の処理室（３２）に連通接続された真空排気装
置（３６）と、 上記ガス発光室（３５）に処理ガスを導入する処理ガス
導入口（３７）と、 上記ガス発光室（３５）と接続して設けてあり、該ガス
発光室内の処理ガスを発光させるマイクロ波源（３８）
と、 上記ステージ（３１）と上記平板（３４）との間で処理
ガスをプラズマ化させる高周波源（３９）上記マイクロ
波源（３８）と上記高周波源（３９）とを順次選択的に
駆動させる制御手段（４０）とを備えていることを特徴
とする半導体製造装置。[Claims] A single processing chamber (32) in which a stage (31) on which an object to be processed (20) is placed is partitioned by a flat plate (34) having a plurality of holes (33). a gas emission chamber (35) disposed above the processing chamber; a vacuum exhaust device (36) connected in communication with the single processing chamber (32); and a gas emission chamber (35) arranged above the processing chamber. a processing gas inlet (37) that introduces the gas, and a microwave source (38) that is connected to the gas luminescence chamber (35) and causes the processing gas in the gas luminescence chamber to emit light.
and a high frequency source (39) for turning the processing gas into plasma between the stage (31) and the flat plate (34), and control for sequentially and selectively driving the microwave source (38) and the high frequency source (39). A semiconductor manufacturing apparatus comprising means (40).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5164689A JPH02230729A (en) | 1989-03-03 | 1989-03-03 | Semiconductor manufacture apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5164689A JPH02230729A (en) | 1989-03-03 | 1989-03-03 | Semiconductor manufacture apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230729A true JPH02230729A (en) | 1990-09-13 |
Family
ID=12892620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5164689A Pending JPH02230729A (en) | 1989-03-03 | 1989-03-03 | Semiconductor manufacture apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230729A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08186095A (en) * | 1994-12-28 | 1996-07-16 | Kawasaki Steel Corp | Formation of contact hole |
| JP2019176184A (en) * | 2015-05-22 | 2019-10-10 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
| US11355319B2 (en) | 2017-12-19 | 2022-06-07 | Hitachi High-Tech Corporation | Plasma processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050923A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Method of plasma surface treatment and device therefor |
| JPS6289882A (en) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | Vapor phase etching method |
| JPS6432631A (en) * | 1987-07-29 | 1989-02-02 | Toshiba Corp | Etching device |
-
1989
- 1989-03-03 JP JP5164689A patent/JPH02230729A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050923A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Method of plasma surface treatment and device therefor |
| JPS6289882A (en) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | Vapor phase etching method |
| JPS6432631A (en) * | 1987-07-29 | 1989-02-02 | Toshiba Corp | Etching device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08186095A (en) * | 1994-12-28 | 1996-07-16 | Kawasaki Steel Corp | Formation of contact hole |
| JP2019176184A (en) * | 2015-05-22 | 2019-10-10 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
| TWI689227B (en) * | 2015-05-22 | 2020-03-21 | 日商日立全球先端科技股份有限公司 | Plasma processing device and plasma processing method using the same |
| US11355319B2 (en) | 2017-12-19 | 2022-06-07 | Hitachi High-Tech Corporation | Plasma processing apparatus |
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