JPH1140395A - Plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multi-chamber type plasma processing apparatus jointly using one microwave oscillating power source. SOLUTION: This apparatus has one microwave 10 whose output end is connected to a chamber, one microwave oscillating source 6 connected to the input end of the microwave line, one microwave oscillating power source 14 for supplying electric power to the microwave oscillating source, and a carrying device 20 for mounting the microwave line and the microwave oscillating source and integrally carrying them. The microwave line is carried to a chamber by driving the carrying device, and the microwave line is connected to either one of chambers 1-4. Thereby, a processing gas or a cleaning gas supplied to the chamber is converted into plasma, and by the plasma, a predetermined processing is conducted to a processing material in the chamber or chamber cleaning is conducted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chamber type plasma processing apparatus.

[0002]

2. Description of the Related Art In a process of manufacturing a semiconductor, in a wiring process, a thin film forming process, etc. formed on a wafer as an object to be processed, individual different plasma processes are combined in accordance with an application, and in a consistent atmosphere. In some cases, a multi-chamber plasma processing apparatus including a plurality of vacuum processing chambers (hereinafter, referred to as chambers) is used for the purpose of improving productivity by performing processing.

FIG. 5 is a plan view schematically showing a conventional plasma processing apparatus, and FIG. 6 is a front view schematically showing a conventional plasma processing apparatus. The first to fourth chambers 5 are wafer transfer chambers (hereinafter, referred to as transfer chambers).

The illustrated plasma processing apparatus is of a multi-chamber type in which chambers 1 to 4 are disposed around a transfer chamber 5, and first to fourth chambers are provided at the boundaries between the chambers 1 to 4 and the transfer chamber 5. Shutters 5a to 5d are provided, and the processing and transfer of the wafer W can be performed while the chambers 1 to 4 and the transfer chamber 5 are maintained in a vacuum.

The chambers 1 to 4 are provided with first to fourth microwave oscillation sources 6 to 9 and first to fourth microwave lines 10 to 13, respectively. The microwave oscillation source is constituted by a magnetron, and includes first to fourth microwave oscillation power supplies including an anode power supply for supplying power between the filament and the anode, and a filament power supply for supplying power to the filament. 14-1
7 is provided separately from the microwave oscillation sources 6 to 9.

The transfer chamber 5 is provided with a transfer robot R for transferring a wafer between the chambers 1 to 4. The transfer robot R transfers unprocessed wafers transferred from the transfer port 5 e of the transfer chamber 5 to the chamber. 2, and the processed wafer can be transferred from the chamber 4 to the loading / unloading port 5e.

The microwave lines 10 to 13 are composed of isolators 10a to 13a, matching devices 10b to 13b, and waveguides 10c to 13c required for installation, and have chambers 1 to 4, microwave oscillation sources 6 to 9, respectively. The microwave oscillation sources 6 to 9 are connected to microwave oscillation power supplies 14 to 17, respectively.

When performing plasma processing with such a conventional plasma processing apparatus, first, the first to fourth shutters 5 are used.
a to 5d and shutters (not shown) provided at the loading / unloading port 5e are closed, and the first to fourth chambers 1 to 4 are opened by a vacuum pump.
4 and the transfer chamber 5 are evacuated. Next, the wafer W transferred into the transfer chamber 5 is transferred to the first chamber 1 by the transfer robot R, and the first shutter 5a is closed. Subsequently, a first processing gas is supplied into the first chamber 1 and the microwave generated from the first microwave oscillation source 6 is supplied to the first processing gas.
When supplied into the chamber 1, the processing gas is excited to generate plasma. The first plasma processing is performed on the surface of the wafer W by this plasma.

When the first plasma processing is completed, the processing gas in the first chamber 1 is exhausted to make a vacuum state. Thereafter, the first shutter 5a is opened, the wafer W is transferred from the first chamber 1 to the second chamber 2 by the transfer robot R, and the second shutter 5b is closed. Subsequently, when a second processing gas is supplied into the second chamber 2 and a microwave generated from the second microwave oscillation source 7 is supplied into the second chamber 2, the processing gas is excited to generate plasma. Is generated. A second plasma process is performed on the surface of the wafer W by this plasma.

When the second plasma processing is completed, the processing gas in the second chamber 2 is exhausted to make a vacuum state. Thereafter, the second shutter 5b is opened, the wafer W is transferred from the second chamber 2 to the third chamber 3, and the third shutter 5c is closed. Subsequently, when a third processing gas is supplied into the third chamber 3 and the microwave generated from the third microwave generation source 8 is supplied into the third chamber 3, the third plasma is supplied to the wafer W. Processing is performed.

When the third plasma processing is completed, the processing gas in the third chamber 3 is exhausted to make a vacuum state. Then, the third shutter 5c is opened, the wafer W is transferred from the third chamber 3 to the fourth chamber 4, and the fourth shutter 5d is closed. Subsequently, when the fourth processing gas is supplied into the fourth chamber 4 and the microwave generated from the fourth microwave oscillation source 9 is supplied into the fourth chamber 4, the fourth plasma is supplied to the wafer W. Processing is performed.

As the above processing gas, alumina (As)
H ₄ ), boron trifluoride (BF ₄ ), phosphine (P
H ₃ ), monosilane (SiH ₄ ) and the like.

By the way, when the above-mentioned plasma processing is performed,
Since a film-like deposit is formed on the inner wall of each chamber, it is necessary to periodically remove the deposit. It is necessary to perform so-called chamber cleaning. When performing the chamber cleaning, first, the first to fourth shutters 5a to 5d are closed, and the first to fourth chambers 1 to 4 are closed.
Supply the cleaning gas inside. Next, microwaves are supplied from the first to fourth microwave oscillation sources 6 to 9 to the first to fourth chambers 1 to 4, respectively, to form plasma, and the above-mentioned deposits and the cleaning gas are reacted. Then, the reaction of the cleaning gas is promoted by the plasma, and the deposit is removed by exhausting the cleaning gas.

The cleaning gas includes oxygen (O ₂ ),
Examples thereof include carbon tetrafluoride (CF ₄ ), nitrogen trifluoride (NF ₃ ), and nitrogen trifluoride (NF ₃ ) + fluorine (F ₂ ).

[0015]

In the conventional plasma processing apparatus, a microwave oscillation source, a microwave line, and a microwave oscillation power supply are required for each of a plurality of chambers. Problem.

An object of the present invention is to provide a multi-chamber type plasma processing apparatus which also serves as one microwave oscillation power supply.

[0017]

The present invention relates to a plasma processing apparatus having a plurality of chambers.

According to the first aspect of the present invention, there is provided one microwave line having an output terminal connected to the chamber, one microwave oscillation source connected to an input terminal of the microwave line, and a microwave oscillation source. A microwave oscillation power supply for supplying power, and a carrier device that carries a microwave line and a microwave oscillation source and integrally transports the microwave line, and drives the carrier device to transport the microwave line to the chamber. Then, by connecting the microwave line to any one of the chambers, the processing gas or the cleaning gas supplied into the chamber is turned into plasma, and a predetermined processing or chamber cleaning is performed on an object to be processed in the chamber. is there.

According to the first aspect of the present invention, predetermined plasma processing is performed on the objects to be processed in the plurality of chambers by using a single microwave line, a microwave oscillation source, and a microwave oscillation power supply. This can be performed, and the film-like deposits formed on the inner wall of the chamber can be removed.

According to a second aspect of the present invention, a microwave line having an output terminal connected to the chamber, a microwave oscillation source connected to an input terminal of the microwave line, and supplying power to the microwave oscillation source. A power supply for microwave oscillation and a switch for switching the output of the power supply for microwave oscillation;
By switching the switch and applying the output of the microwave oscillation power supply to any one of the microwave oscillation sources, the processing gas or the cleaning gas supplied into the chamber is turned into plasma, and a predetermined amount is applied to the object to be processed in the chamber. Or chamber cleaning.

According to the second aspect of the present invention, for the objects to be processed in the plurality of chambers, the same number of microwave lines and microwave oscillation sources as the number of chambers and one microwave oscillation power supply are provided. A predetermined plasma treatment can be performed, and a film-like deposit formed on the inner wall of the chamber can be removed.

According to a third aspect of the present invention, the chambers are arranged on the same circle, and the microwave line and the microwave oscillation source are carried on the circle.

According to the third aspect of the present invention, the mechanism and control of the carrier device can be simplified by carrying the microwave line and the microwave oscillation source on a circle.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION

<First Embodiment> FIG. 1 is a plan view schematically showing a first embodiment of a plasma processing apparatus according to the present invention, and FIG. 2 is a front view schematically showing the first embodiment. is there. In FIG. 1, reference numerals 1 to 4 denote first to fourth chambers, and reference numeral 5 denotes a transfer chamber. The plasma processing apparatus of the present invention is the same as the conventional multi-chamber in which the chambers 1 to 4 are arranged around the transfer chamber 5. Type. Note that the same components as those of the conventional technique are denoted by the same reference numerals.

Reference numeral 6 denotes a microwave oscillation source, 10 denotes a microwave line, and 14 denotes a microwave oscillation power supply. In the present embodiment, all of them are constituted by one. Reference numeral 20 denotes a transfer device including a support 20a and a rotation mechanism 20b,
The microwave oscillation source 6 is connected to the microwave oscillation power supply 14 in a state where the microwave oscillation source 6 and the microwave line 10 are integrally mounted on the support 20a.

When the plasma processing is performed by the plasma processing apparatus of the first embodiment, first, the microwave oscillating source 6 and the microwave line 10 are firstly moved by the carrier device 20.
And the microwave line 10 is connected to the first chamber 1. Next, the first to fourth shutters 5a to 5d and shutters (not shown) provided at the loading / unloading port 5e are closed, and the first chamber 1 and the transfer chamber 5 are evacuated. Subsequently, the wafer W carried into the transfer chamber 5 is transferred to the first chamber 1 by the transfer robot R,
Is closed. Subsequently, a first processing gas is supplied into the first chamber 1 and a microwave oscillation source 6 is supplied.
When the microwaves generated from are supplied into the first chamber 1, the processing gas is excited to generate plasma. The first plasma processing is performed on the surface of the wafer W by this plasma.

When the first plasma processing is completed, the processing gas in the first chamber 1 is exhausted to make a vacuum state. Thereafter, the microwave line 10 is transferred from the first chamber 1 to the second chamber 2 by the transfer device 20, and this line is connected to the second chamber. Next, the chamber is evacuated. Subsequently, the second shutter 5b is opened, the wafer W is transferred from the first chamber 1 to the second chamber 2 by the transfer robot R, and the shutter 5b is closed. Subsequently, a second processing gas is supplied into the second chamber 2 and the microwave generated from the microwave oscillation source 6 is supplied to the second processing gas.
When the wafer W is supplied into the chamber 2, the second plasma processing is performed on the wafer W.

When the second plasma processing is completed, the processing gas in the second chamber 2 is exhausted to make a vacuum state. Thereafter, the microwave line 10 is transferred from the second chamber 2 to the third chamber 3, and the line is connected to the third chamber. Next, the chamber is evacuated. Subsequently, the third shutter 5c is opened, the wafer W is transferred from the second chamber 2 to the third chamber 3, and the shutter 5c is closed. Subsequently, when a third processing gas is supplied into the third chamber 3 and a microwave is supplied into the third chamber 3, the third plasma processing is performed on the wafer W.

When the third plasma processing is completed, the processing gas in the third chamber 3 is exhausted to make a vacuum state. Thereafter, the microwave line 10 is transferred from the third chamber 3 to the fourth chamber 4, and the line is connected to the fourth chamber. Next, the chamber is evacuated. Subsequently, the fourth shutter 5d is opened, the wafer W is transferred from the third chamber 3 to the fourth chamber 4, and the shutter 5d is closed. Subsequently, when a fourth processing gas is supplied into the fourth chamber 4 and a microwave is supplied into the fourth chamber 4, the fourth plasma processing is performed on the wafer W.

When performing chamber cleaning with the plasma processing apparatus of the first embodiment, first, the transfer apparatus 2
By 0, the microwave oscillation source 6 and the microwave line 10 are conveyed onto the first chamber 1, and this line is connected to the first chamber, and the shutter 5a is closed. Next, when the first cleaning gas is supplied into the first chamber 1 and the microwave generated from the microwave oscillation source 6 is supplied into the first chamber 1, the film-like deposit is removed.

When the first chamber cleaning is completed, the microwave line 10 is transported from the first chamber 1 to the second chamber 2, and this line is connected to the second chamber, and the shutter 5b is closed. Next, the second
When the second cleaning gas is supplied into the second chamber 2 and the microwave generated from the microwave oscillation source 6 is supplied into the second chamber 2, the film-like deposit is removed.

When the cleaning of the second chamber is completed, the microwave line 10 is transferred from the second chamber 2 to the third chamber 3, and this line is connected to the third chamber, and the shutter 5c is closed. Next, the third
When the third cleaning gas is supplied into the third chamber 3 and the microwave generated from the microwave oscillation source 6 is supplied into the third chamber 3, the film-like deposit is removed.

When the third chamber cleaning is completed, the microwave line 10 is conveyed from the third chamber 3 to the fourth chamber 4, this line is connected to the fourth chamber, and the shutter 5d is closed. Next, the fourth
When the fourth cleaning gas is supplied into the fourth chamber 4 and the microwave generated from the microwave oscillation source 6 is supplied into the fourth chamber 4, the film-like deposit is removed.

<Second Embodiment> FIG. 3 is a plan view schematically showing a second embodiment of the plasma processing apparatus according to the present invention, and FIG. 4 is a schematic view showing the first embodiment. It is a front view. In FIG. 1, reference numerals 1 to 4 denote first to fourth chambers, and reference numeral 5 denotes a transfer chamber.
This is the same multi-chamber type as that of the related art in which chambers 1 to 4 are arranged around the transfer chamber 5. Note that the same components as those of the conventional technique are denoted by the same reference numerals.

6 to 9 are first to fourth microwave oscillation sources, 10 to 13 are first to fourth microwave lines, 14
Denotes a microwave oscillation power supply. In the present embodiment, the microwave oscillation power supply and the microwave line are four, and the microwave oscillation power supply is one. 21 is a common terminal 21
a switch comprising a switching terminal 21b to 21e and a connecting piece 21f, a microwave oscillation power supply 14 is connected to a common terminal 21a, and microwave oscillation sources 6 to 9 are connected to the switching terminals 21b to 21e, respectively. Have been.

Microwave oscillation sources 6 to 9 and microwave lines 10 to 13 are mounted on chambers 1 to 4, respectively.
The microwave lines 10 to 13 connect between the chambers 1 to 4 and the microwave oscillation sources 6 to 9, respectively.

When plasma processing is performed by the plasma processing apparatus of the second embodiment, first, the first to fourth chambers 1 to 4 and the transfer chamber 5 are evacuated by a vacuum pump (not shown). Next, the wafer W carried into the transfer chamber 5 is transferred to the first chamber 1 by the transfer robot R, and the shutter 5a is closed. During this time, the switch 21 connects the connection piece 21f to the switching terminal 21b. continue,
When the first processing gas is supplied into the first chamber 1 and the microwave generated from the microwave oscillation source 6 is supplied into the first chamber 1, the processing gas is excited to generate plasma. The first plasma processing is performed on the surface of the wafer W by this plasma.

When the first plasma processing is completed, the processing gas in the first chamber 1 is exhausted to make a vacuum state. Then, the shutter 5a is opened, and the wafer W is transferred to the transfer robot R.
To transfer from the first chamber 1 to the second chamber 2 and close the shutter 5b. During this time, the connecting piece 21f is connected to the switching terminal 21c. Subsequently, when the second processing gas is supplied into the second chamber 2 and the microwave generated from the microwave oscillation source 6 is supplied into the second chamber 2,
Plasma is generated by exciting the processing gas. A second plasma process is performed on the surface of the wafer W by this plasma.

When the second plasma processing is completed, the processing gas in the second chamber 2 is exhausted to make a vacuum state. After that, the shutter 5b is opened, and the wafer W is
To the third chamber 3, and the shutter 5c is closed. During this time, the connection piece 21f is connected to the switching terminal 21d. Subsequently, when the third processing gas is supplied into the third chamber 3 and the microwave generated from the microwave oscillation source 6 is supplied into the third chamber 3, the third plasma processing is performed on the wafer W. Is done.

When the third plasma processing is completed, the processing gas in the third chamber 3 is exhausted to make a vacuum state. After that, the shutter 5c is opened, and the wafer W is
To the fourth chamber 4, and the shutter 5d is closed. During this time, the connecting piece 21f is connected to the switching terminal 21e. Subsequently, when the fourth processing gas is supplied into the fourth chamber 4 and the microwave generated from the microwave oscillation source 6 is supplied into the fourth chamber 4, the fourth plasma processing is performed on the wafer W. Is done.

When performing chamber cleaning with the plasma processing apparatus of the second embodiment, first, the connecting piece 21f is connected to the switching terminal 21b by the switching device 21, and
The shutter 5a is closed. Next, when the first cleaning gas is supplied into the first chamber 1 and the microwave generated from the microwave oscillation source 6 is supplied into the first chamber 1, the film-like deposit is removed.

When the first chamber cleaning is completed, the connecting piece 21f is connected to the switching terminal 21c,
The shutter 5b is closed. Next, when the second cleaning gas is supplied into the second chamber 2 and the microwave generated from the microwave oscillation source 6 is supplied into the second chamber 2, the film-like deposit is removed.

When the second chamber cleaning is completed, the connection piece 21f is connected to the switching terminal 21d, and
The shutter 5c is closed. Next, when a third cleaning gas is supplied into the third chamber 3 and the microwave generated from the microwave oscillation source 6 is supplied into the third chamber 3, the film-like deposit is removed.

When the third chamber cleaning is completed, the connection piece 21f is connected to the switching terminal 21e, and
The shutter 5d is closed. Next, when the fourth cleaning gas is supplied into the fourth chamber 4 and the microwave generated from the microwave oscillation source 6 is supplied into the fourth chamber 4, the film-like deposit is removed.

In the first embodiment, the chambers 1 to 4 are arranged on the same circle, and the microwave oscillation source 6
When the microwave line 10 is conveyed on this circle, the mechanism and control of the conveying device 20 can be simplified.

[0046]

As described above, according to the first aspect of the present invention, a plurality of chambers can be all dealt with by one microwave line, a microwave oscillation source, and a microwave oscillation power supply. The cost can be further reduced, and a predetermined plasma processing and a film-like deposit formed on the inner wall of the chamber can be removed.

According to the second aspect of the present invention, a plurality of chambers can be handled by the same number of microwave lines and microwave oscillation sources and one microwave oscillation power supply, so that equipment costs can be reduced. In addition to a predetermined plasma treatment, a film-like deposit formed on the inner wall of the chamber can be removed.

Further, according to the third aspect, since the microwave line and the microwave oscillation source are conveyed on a circle, the mechanism and control of the conveying device can be simplified.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing a first embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a front view schematically showing the first embodiment.

FIG. 3 is a plan view schematically showing a second embodiment of the plasma processing apparatus according to the present invention.

FIG. 4 is a front view schematically showing a second embodiment.

FIG. 5 is a plan view schematically showing a conventional plasma processing apparatus.

FIG. 6 is a front view schematically showing a conventional plasma processing apparatus.

[Explanation of symbols]

 1-4 chamber 5 transfer chamber 6-9 microwave oscillation source 10-13 microwave line 14 microwave oscillation power supply 20 transfer device 21 switch

Claims (3)

[Claims] 1. A plasma processing apparatus having a plurality of chambers, wherein: one microwave line having an output terminal connected to the chamber; and one microwave oscillation source connected to an input terminal of the microwave line. A microwave oscillation power supply for supplying power to the microwave oscillation source, and a carrier device for carrying the microwave line and the microwave oscillation source and integrally transporting the same, and driving the carrier device Then, the microwave line is transferred to the chamber, and the microwave line is connected to any one of the chambers, so that a processing gas or a cleaning gas supplied to the chamber is turned into plasma, and A plasma processing apparatus for performing predetermined processing or chamber cleaning on an object to be processed. 2. A plasma processing apparatus having a plurality of chambers, wherein: a microwave line having an output terminal connected to the chamber; a microwave oscillation source connected to an input terminal of the microwave line; A microwave oscillation power supply for supplying power to an oscillation source; and a switch for switching an output of the microwave oscillation power supply, wherein the switch is switched to output an output of the microwave oscillation power supply to the microwave. A plasma processing apparatus that converts a processing gas or a cleaning gas supplied into the chamber into plasma by adding the processing gas or the cleaning gas to one of the oscillation sources to perform predetermined processing or chamber cleaning on an object to be processed in the chamber. 3. The plasma processing apparatus according to claim 1, wherein the chambers are arranged on the same circle, and the microwave line and the microwave oscillation source are carried on the circle.