JPS60102744A - Vacuum treater - Google Patents

Abstract

PURPOSE:To select parallel treatment and series treatment for a substrate arbitrarily by mounting two means carrying the substrate between a vacuum treating chamber and a preparatory vacuum chamber while fitting a buffer chamber. CONSTITUTION:Vacuum treating chambers 30a, 30b treating substrates 20 by dry processes are mounted to a buffer chamber 10. A gate valve 40a is fitted to the side wall of the buffer chamber 10, and a preparatory vacuum chamber 50 for loading and unloading the substrates is installed. Gate valves 40b, 40c capable of being communicated with the atmospheric air side are mounted on both sides of the preparatory vacuum chamber 50. The substrates 20 are treated simultaneously by the two vacuum treating chambers 30a, 30b on parallel treatment, and the substrate is treated by the vacuum treating chamber 30a and treated by the vacuum treating chamber 30b on series treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a vacuum processing apparatus, and particularly to a vacuum processing apparatus suitable for performing a predetermined process on a substrate in a dry process.

[Background of the invention]

Recent advances in semiconductor manufacturing technology have been remarkable, and vacuum processing equipment that performs predetermined processing on substrates in a dry process, for example,
As for dry etching equipment, a model capable of etching a 1 μm pattern has appeared and is attracting attention. As semiconductor manufacturing technology advances, the diameter of the substrates being processed becomes larger, and as a result, increasing the throughput (the number of substrates processed per hour) per unit area of the device has become a major challenge for vacuum processing equipment. ing.

For example, Japanese Patent Application Laid-Open No. 57-128928 discloses a technique for improving throughput using multi-chambers. In such technology, separate substrates are processed simultaneously in separate chambers (hereinafter abbreviated as parallel processing).
Although the throughput can be improved by doing so, there are the following problems.

(1) When processing one substrate sequentially in a chamber (hereinafter referred to as series processing), when transferring the substrate from one chamber to the next chamber, be sure to pass through the preliminary chamber. (2) Due to the poor cleanliness of the preparatory chamber, there are problems in applying it to process steps where the process is handed over to the next diemper midway through the process.

In addition, there is also a technique that improves throughput by rotating the substrate between two processing chambers and a load chamber that are arranged on the same circumference, and processing the substrates in series in the two processing chambers. , With this kind of technology, the following problems arise7? :.

(1) Parallel processing of substrates is not possible.

(2) Considering the exclusive floor space of the equipment, the number of chambers is limited, making it difficult to use a wide process chamber.

[Purpose of the invention]

An object of the present invention is to provide a highly flexible, high-throughput vacuum processing apparatus in which parallel processing or series processing of substrates can be arbitrarily selected depending on the purpose of use.

[Summary of the invention]

The present invention has two substrate processing chambers in which substrates are processed in a dry process. A substrate transfer means is provided so that the substrate can be transferred between the vacuum processing chamber and the vacuum preparatory chamber via the buffer chamber via the vacuum opening/closing means, and between the vacuum processing chambers via the vacuum preparatory chamber or the buffer chamber. It is characterized by the fact that it is equipped with another board transport means, which allows for parallel processing of boards depending on the purpose of use.

Series processing can be selected arbitrarily.

(Example of the invention) An embodiment of the present invention will be described with reference to FIGS. 1 to 183.

In FIG. 1, a buffer chamber 10 has vacuum processing chambers 30a and 30b in which substrates are processed in a dry process. A vacuum opening/closing means, for example, a gate valve 40 is provided on the side wall of the buffer chamber 10 corresponding to the vacuum processing chambers 30a and 30b.
3. A vacuum preliminary chamber for substrate loading and unloading is provided via a gate valve 40a. For example, in a case where the substrate material is carried into the vacuum preparatory chambers from the atmosphere side and the substrate material is carried out from between the vacuum preparatory chambers to the atmosphere side, there is a
Vacuum atmosphere opening/closing means, for example, gate valves 40b, 40
c is provided in this case on the side wall perpendicular to the gate valve 40a. In this case, on the atmospheric side corresponding to the gate valves 4Qb and 4Gc, there is a cassette stand 5 that moves up and down intermittently.
Qa and 60b are provided. Vacuum processing chambers 30a, 3
0b includes, for example, a counter electrode (not shown) and a substrate electrode (
(not shown) are provided inside to face each other in the vertical direction, and are arranged so that the buffer chamber 10 and the vacuum processing chambers 30a, 30b can be quickly and airtightly communicated with each other during substrate processing. In addition, the buffer chamber 10. High frequency power can be applied to the vacuum processing chambers 30a, 30b and the vacuum reserve, for example, the substrate electrode. In addition, the cassette 61 placed on the cassette stand 60a
Take out the substrate from a and attach the gate valve 4C to the substrate.
A publicly known substrate loading device (not shown) transports the substrate between the vacuum preparatory chambers via the vacuum preparatory chamber 1b, and the substrate is transferred from between the vacuum preparatory chamber via the gate valve 40b and transferred to the cassette table 60b. A known substrate unloading device (not shown) is provided to accommodate the placed cassette 61b.

First, when processing the substrate in parallel, the gate valve 40a passes through the buffer chamber 10 and then the vacuum processing chamber 30a.
, 30b and the vacuum preliminary chamber, that is, the substrate stands 70g, 70b of an orientation flat alignment device (not shown) provided between the substrate electrode and the vacuum preliminary chamber corresponding to, for example, the vacuum processing chambers 30a, 30b. For example, a substrate transfer means (not shown) such as a transfer arm rotation type Φ substrate transfer device, a transfer arm straight type substrate transfer device, or a belt transfer device is provided to transfer the substrate between the A board 70a in the cabinet.

Other substrate transport means (not shown), such as a belt transport device, a straight transport arm type substrate transport device, etc., are provided to transport the substrate between the substrates 70 and 70b. Note that the transfer arm is an arm that is provided with a substrate receiving part such as a substrate scooper that scoops the substrate from the backside, a mechanical gripper that grasps the substrate, etc., that rotates or moves straight by a drive device.

In FIGS. 1 and 2, a substrate loading device takes out one substrate from a cassette 61a placed on a cassette table 60a, and the substrate is connected to the open gate valve 4ob.
is carried between the vacuum preliminary chambers via the vacuum chamber.

The substrate unit carried between the vacuum preliminary chambers is transferred to the substrate table 70 in the direction of the arrow by another substrate transport means via the substrate table 70a.
After being transported to the substrate board 70b, it is transferred to and placed on the substrate table 70b. Further, another substrate section is taken out from the cassette 61a by the substrate loading device, and the substrate section is loaded into the gate valve +! After being carried between the vacuum preparatory chambers via Ob, it is transferred to and placed on the substrate table 70a.

Thereafter, the gate valve 40b is closed, and the buffer chamber 10 is evacuated to a predetermined pressure.
The vacuum processing chambers 30a and 30b are evacuated to a pressure comparable to that of the vacuum processing chambers 30a and 30b. - 10,000, orientation flat alignment of the substrate parts placed on the substrate stands 70a and 70b is performed. Thereafter, the gate valve 40a is opened, and the substrate parts placed on the substrate stands 70a and 70b are placed on the substrate electrodes as indicated by the arrows 81, 82, 7, and 7, respectively. After that, Buff 1
Communication between the chamber 10 and the vacuum processing chambers 30a, 30b is hermetically blocked, and in this state, processing gas is introduced into the vacuum processing chambers 30a, 30b at a predetermined flow rate, and the vacuum processing chamber 30a
, 30b are appropriately adjusted to the processing pressure. after that,
By applying high frequency power to the substrate electrode, a glow discharge is generated between the counter electrode and the substrate electrode, thereby turning the processing gas into plasma.

The substrate portion placed on the substrate electrode is treated with this plasma. After such processing of the substrate section is completed, the vacuum processing chambers 30a and 30b are brought into communication with the buffer chamber 10 again. Thereafter, the processed substrate parts placed on the substrate electrodes are transported by the substrate transport means via the gate valve 40a, through the buffer chamber 10, to the substrate stands 70a and 70b in the direction of arrow 83. stand 70a
, 70b and placed thereon. Thereafter, gate valve 40a is closed, while gate valve 40c is opened. The processed substrate placed on the substrate table 70b is transferred to the substrate unloading device, and the device transfers the processed substrate to the gate valve 4.
After being carried out from between the vacuum preliminary chambers via 0c, it is stored in a cassette 61b placed on a cassette stand 60b. Further, the processed substrate placed on the substrate table 70b is transferred to another substrate transport means and transported by the means in the direction of the arrow, and then transferred to the substrate unloading device via the substrate table 70b. passed on. The substrate section delivered to the device is stored in the cassette 61b in the same manner as described above. after that,
Gate valve 40c is closed. By repeating the operations described above, two substrates are carried between the vacuum preparatory chambers, and the substrate portions are transferred to the vacuum processing chambers 30a and 30b.
After being processed in parallel, two sheets are taken out from the vacuum preliminary chamber (equipment).

In addition, when serially processing the substrate section, the gate valve 40a is used to pass through the buffer chamber 10 to the vacuum processing chamber 30a,
30b and the vacuum preliminary chamber, that is, between the substrate electrode and the substrate stands 70a and 70b, a substrate transport means is provided in the same manner as in the case of parallel processing, and Vacuum processing chamber° 81 Other devices that transport the substrate between 30a and 30b, that is, between the substrate electrodes, such as a rotating transport arm type substrate transport device, a straight transport arm type substrate transport device, a belt transport device, etc. A substrate transport means (not shown) is provided.

In FIGS. 1 and 3, one substrate is taken out from a cassette 61 a placed on a cassette table 60 a by a substrate loading device, and the substrate is placed in the open gate valve 40 .
After being carried between the vacuum preparatory chambers via b, the substrate table 70
It is handed over to a and placed on it. After that, the gate valve 40
10.b is closed and the vacuum preliminary chamber is evacuated to a predetermined pressure. The vacuum processing chambers 30a and 30b are evacuated to a pressure comparable to that of the vacuum processing chambers 30a and 30b. On the other hand, the board stand 70a
Orientation flat alignment of the substrate portion placed on the substrate is performed. Thereafter, the gate valve 40a is opened, and the substrate placed on the substrate table 70a is transported by the substrate transport means via the gate valve 40a, through the buffer chamber 10, to the substrate electrode in the direction of the arrow. It will be handed over and placed there.

Thereafter, the communication between the buffer chamber 10 and the vacuum processing chamber 30a is quickly and airtightly interrupted, and in this state, processing gas is introduced into the vacuum processing chamber 30a at a predetermined flow rate, and at the same time
The pressure is adjusted appropriately to the processing pressure.

Thereafter, by applying high frequency power to the substrate electrode, a glow discharge is generated between the counter electrode and the substrate electrode, whereby the processing gas is turned into plasma. The substrate placed on the substrate electrode is subjected to primary processing (rough processing) by this plasma. During this process, the substrates in the cassette 61a are carried into the vacuum preliminary chamber in the same manner as described above and placed on the substrate table 70a, after which orientation flat alignment is performed. After the primary processing of the substrate is completed, the vacuum processing chamber 30a is brought into communication with the buffer chamber 10 again. Thereafter, the primary-processed substrate placed on the substrate electrode is transported in the direction of arrow 9 by another substrate transport means through the buffer chamber to the substrate electrode in vacuum processing chamber b. It is passed to the electrode and placed on it. Meanwhile, during this time, the substrate placed on the substrate table 70a is transported by the substrate transport means in the direction of the arrow and placed on the substrate electrode of the vacuum processing chamber 30a. Thereafter, the communication between the buffer chamber 10 and the vacuum processing chambers 30a, 30b is hermetically cut off, and in this state, processing gas is introduced into the vacuum processing chambers 30a, 30b at a predetermined flow rate. The pressure is adjusted appropriately to the processing pressure. Thereafter, by applying high frequency power to each of the substrate electrodes, a glow discharge is generated between the opposing electrode and the substrate electrode, thereby turning the processing gas into plasma. The substrate placed on the substrate electrode of the vacuum processing chamber 30a is primarily processed by this plasma, and the primarily processed substrate placed on the substrate electrode of the vacuum processing chamber 30b is secondarily processed by this plasma. Next processing (finishing) is performed. During such processing, after the substrates in the cassette 61a are carried into the vacuum preliminary chamber 50 and placed on the substrate table 70a in the same manner as described above, orientation flat alignment is performed. After completing such processing,
The vacuum processing chambers 30a, 30b are brought into communication with the buffer chamber 10 again. Thereafter, the secondary-processed substrate placed on the substrate electrode in the vacuum processing chamber 30b is transported by the substrate transport means in the direction of arrow 92 via the gate valve 40a, through the buffer 1 chamber 10, to the substrate table 70b. After that...
11 - The board is passed to and placed on the board stand 70b. Meanwhile, during this time,
- The next processed substrate (9) is placed on the substrate electrode of the vacuum processing chamber 3ob, and the substrate placed on the substrate table 70a is placed on the substrate electrode of the vacuum processing chamber 30a. Ru. The substrates placed on the substrate electrodes are subjected to primary processing and secondary processing in the same manner as described above. During such processing, the secondary-processed substrate placed on the substrate table 70b is transferred to the gate valve 40 by the substrate unloading device.
After being carried out from the vacuum preparatory chamber □□□ via c, it is stored in a cassette 61b placed on a cassette stand 60b. Further, after the substrates in the cassette 61a are loaded into the vacuum preliminary chamber 50 and placed on the substrate table 70a in the same manner as described above, orientation flat alignment is performed.

By repeating the operations described above, the substrates are carried one by one between the vacuum preparatory chambers, and after being serially processed in the vacuum processing chambers 30a and 30b, the substrates are transferred to the vacuum preparatory chamber (materials). ) are carried out one by one.

The vacuum processing apparatus like this embodiment provides the following effects.

・12. (1) Depending on the purpose of use, the substrate processing method can be arbitrarily selected from either parallel processing or series processing.

(2) When processing substrates in series, the substrates can be transferred to the vacuum processing chamber without passing through the vacuum preparatory chamber.
The number of transportation steps can be reduced and the transportation time can be shortened.

(3) Because the cleanliness of the buffer chamber is good, the process is handed over to the next vacuum processing chamber midway through the process.

It can also be used in process processes without any problems.

(4) Even when considering the exclusive floor area of the device, the limitation on the number of vacuum processing chambers can be relaxed compared to the conventional technology, making it easier to use in a wide range of processes.

In addition, in this example, the vacuum preliminary chamber is one room, but
In addition, it may be divided into two units corresponding to the vacuum processing chambers. When the vacuum preliminary chamber is divided into two units in this manner, each vacuum preliminary chamber may be provided in the buffer chamber via a vacuum opening/closing means. In addition, when processing substrates in parallel using a vacuum preparatory chamber divided into two, an opening or a gate valve, etc., through which other substrate transport means can hold and pass substrates, etc., is provided in the wall that divides the vacuum preparatory chamber. It is sufficient to provide a vacuum opening/closing means. Further, although the substrates are carried in between the vacuum preliminary chamber and the atmosphere side, substrates may be carried in between the vacuum preliminary chamber and the vacuum side. Furthermore, in the case of series processing of substrates, the table on which the secondary-processed substrates are placed in the vacuum preliminary chamber does not particularly need to be the substrate table of the orientation flat alignment device. In addition, in the case of parallel processing of substrates, other substrate transport means include a substrate loading device and a substrate table (vacuum processing chamber 3f in FIG. 1) b.
and the substrate stand 70b), which corresponds to the vacuum preparatory chamber 50), and between the substrate table (substrate stand 70a, which corresponds to the vacuum processing chamber a in FIG. 1 and is provided in the vacuum preparatory chamber 50) and the substrate. The substrate may be provided so as to be transportable to and from the unloading device. Also, 2
When processing more than one substrate in parallel, or when processing substrates in series in secondary or higher processing steps, a buffer chamber with a corresponding number of two or more vacuum processing chambers may be used as the buffer chamber. Alternatively, the vacuum and 15° processing apparatus of the above embodiment may be used as one module, and a necessary number of modules may be constructed.

〔Effect of the invention〕

As explained above, the present invention provides a buffer chamber having at least two vacuum processing chambers, and a substrate loading device installed in the buffer chamber via a vacuum opening/closing means.

It has a vacuum preparatory chamber for unloading, and is provided with a substrate transport means that can transport the substrate between the vacuum processing chamber and the vacuum preparatory chamber via a vacuum opening/closing means via the buffer chamber. By providing other blue plate transport means that can transport the substrate or transport the substrate between vacuum processing chambers via the buffer chamber, it is possible to arbitrarily select parallel processing or series processing of the substrate depending on the purpose of use. This has the effect of providing a high-throughput vacuum processing device that is highly flexible.

[Brief explanation of drawings]

FIG. 1 is a plan configuration diagram showing an embodiment of a vacuum processing apparatus according to the present invention, FIG. 2 is a schematic diagram showing a flow situation of a substrate during parallel processing of substrates, and FIG. FIG. 3 is a schematic diagram showing the flow of substrates during series processing of substrates. 10... Buffer chamber, (a)... Substrate, 3Qa, 30b... Vacuum processing chamber, 40a...
・Gate valve, Seki...Vacuum preliminary chamber

Claims (1)

[Claims] 1. A buffer chamber having at least two vacuum processing chambers in which substrates are processed in a dry process, and a vacuum preparatory chamber for substrate loading and unloading provided in the chamber via a vacuum opening/closing means. , a substrate transporting means is provided to transport the substrate between the vacuum processing chamber and the vacuum preparatory chamber via the vacuum opening/closing means and the first buffer chamber; A vacuum processing apparatus further comprising another substrate transport means capable of transporting the substrate between the vacuum processing chambers.