JPS6085527A - Vacuum treating apparatus - Google Patents

Vacuum treating apparatus

Info

Publication number
JPS6085527A
JPS6085527A JP19241083A JP19241083A JPS6085527A JP S6085527 A JPS6085527 A JP S6085527A JP 19241083 A JP19241083 A JP 19241083A JP 19241083 A JP19241083 A JP 19241083A JP S6085527 A JPS6085527 A JP S6085527A
Authority
JP
Japan
Prior art keywords
vacuum
chamber
substrate
vacuum processing
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19241083A
Other languages
Japanese (ja)
Inventor
Yutaka Kakehi
掛樋　豊
Norio Nakazato
仲里　則男
Yoshimasa Fukushima
福島　喜正
Hironobu Ueda
博信 上田
Fumio Shibata
柴田　史雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19241083A priority Critical patent/JPS6085527A/en
Publication of JPS6085527A publication Critical patent/JPS6085527A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To select series treatment or parallel one for a substrate arbitrarily in response to the object of use by constituting a vacuum treatment module by a vacuum treating chamber, a buffer chamber, a vacuum spare chamber and a substrate carrying means and previously bringing the substrate to a transferable state in a vacuum treating space or a vacuum spare space by using two pairs of the modules. CONSTITUTION:A vacuum treatment module 10 is constituted by a vacuum treating chamber 30 executing a drying process to a substrate 20, a buffer chamber 40, which can carry in and out the substrate 20 between the buffer chamber 40 and the chamber 30, a substrate carrying means 70, which is positioned in the chamber 40 and consists of an arm 71, a substrate placing tool 72 and a shaft 73, and a vacuum spare chamber 60 with gate valves 51 and 52. The two modules 10a and 10b are positioned adjacently through a vacuum chamber 80 for carrying having a carrying means 90 composed of an arm 91, a substrate placing tool 92 and a shaft 93 and a vacuum chamber 81 for carrying, and spare chambers 60a and 60b are held by cassette arranging bases 100 and 101 opposite to the vacuum chamber 81. Accordingly, the substrate 20 can be treated in series and in parallel.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、真空。処理装置に係り、特にドライプロセス
にて基板に所定の処理を施こすのに好適な真空処理装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to vacuum. The present invention relates to a processing apparatus, and particularly to a vacuum processing apparatus suitable for performing predetermined processing on a substrate in a dry process.

〔発明の背景〕[Background of the invention]

最近の半導体製造技術の進歩は著しく、ドライプロセス
にて基板に所定の処理を施こす真空処理装置、例えば、
ドライエツチング装置においては１μｍパターンをエツ
チング処理する機種が現われ注目を浴びている。このよ
うな半導体製造技術の進歩につれ処理される基板は大口
径化し、それに伴って、装置の専有床面積当りのスルー
プット（時間当りの基板処理枚数）を向上させることが
真空処理装置の大きな課題となっている。Recent advances in semiconductor manufacturing technology have been remarkable, and vacuum processing equipment that performs predetermined processing on substrates in a dry process, for example,
Among dry etching apparatuses, a model capable of etching a 1 μm pattern has appeared and is attracting attention. As semiconductor manufacturing technology advances, the diameter of the substrates being processed becomes larger, and as a result, increasing the throughput (the number of substrates processed per hour) per unit of equipment floor space has become a major challenge for vacuum processing equipment. It has become.

例えば、特開昭５７−１２８９２８号公報には、マルチ
・チェンバを用いてスループットを向上させる技術が示
されている。このような技術では、基板のパラレル処理
によ、リスループツトを向上できるものの、しかし、次
のような問題があった。For example, Japanese Patent Application Laid-Open No. 57-128928 discloses a technique for improving throughput using multi-chambers. Although this technique can improve recirculation through parallel processing of substrates, it has the following problems.

（１）基板をシリーズに処理する場合、処理が終了した
基板を次のチェンバに搬送するには、必ず予備室を経な
くてはならないため、搬送ステップ数が多くなり搬送時
間が長くなる。(1) When processing substrates in series, the processed substrate must pass through the preliminary chamber in order to be transferred to the next chamber, which increases the number of transfer steps and increases the transfer time.

（２）　予備室の清浄度が悪いため、処理途中で次のチ
ェンバに処理を引継く゛ようなプロセス工程へのダ用に
は問題がある。(2) Because the cleanliness of the preliminary chamber is poor, there is a problem in using it for process steps where the process is transferred to the next chamber midway through the process.

また、この他に二つの処理チェンバとロートチエンハト
の間で基板を回転により搬送して二つの処理チェンバで
基板をシリーズ処理しスループットを向上させる技術も
あるが、このような技術では、次のような問題があった
。In addition, there is also a technology that transfers the substrate by rotation between two processing chambers and a funnel chain, processing the substrates in series in the two processing chambers to improve throughput. There was a problem like this.

（１）基板をパラレル処理できない。(1) Parallel processing of substrates is not possible.

（２）装置の専有床面積を考慮した場合、チェンバ数が
限定されるため、幅広いプロセスには使用しすらい。(2) Considering the dedicated floor space of the equipment, the number of chambers is limited, so it cannot be used for a wide range of processes.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、使用目的に応じて基板のシリーズ処理
、パラレル処理を任意に選択可能でフレキシビリティに
富んだ高スループツトの真空処理装置を提供することに
ある。An object of the present invention is to provide a highly flexible, high-throughput vacuum processing apparatus that can arbitrarily select between series processing and parallel processing of substrates depending on the purpose of use.

〔発明の概要〕[Summary of the invention]

官表 本発明は、真空処理室と、り室との間で基板を搬入出可
能に設けられたバッファ室と、該室に真空開閉手段を介
し具設されると共に基板搬入用の真空開閉手段と基板搬
出用の真空開閉手段とが設けられた真空予備室と、該室
内で基板を搬送する基板搬送手段と、真空処理室と真空
予備室との間でバッファ室を介して基板を搬送する基板
搬送手段とで構成された真空処理モジュールを、真空処
里 環２間で基板を搬送可能若しくは真空予備室間で基板を
搬送可能に少なくとも２モジユール構設したことを特徴
とするもので、使用目的に応じて基板のシリーズ処理、
パラレル処理を任意に選択可能としたものである。The present invention provides a buffer chamber provided between a vacuum processing chamber and a buffer chamber so that substrates can be carried in and out of the chamber, and a vacuum opening and closing means provided in the chamber via a vacuum opening/closing means for carrying in substrates. a vacuum preliminary chamber provided with a vacuum opening/closing means for carrying out the substrate; a substrate conveying means for conveying the substrate within the chamber; and a buffer chamber for conveying the substrate between the vacuum processing chamber and the vacuum preliminary chamber. It is characterized by having at least two vacuum processing modules configured with a substrate transfer means configured to be able to transfer substrates between vacuum processing rings 2 or between vacuum preparatory chambers. Series processing of boards according to purpose,
This allows parallel processing to be selected arbitrarily.

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例を第１図、第２図により説明する。 An embodiment of the present invention will be described with reference to FIGS. 1 and 2.

第１図で、真空処理モジュール１０は、基板加がドライ
プロセスにて処理される真空処理室（９）と、真空処理
室力との間で基板加を搬入出可能に設けられたバッファ
室伯と、バッファ室伯に真空開閉手段、例えば、ゲート
弁間を介し具設されると共に基板搬入用の真空開閉手段
、例えば、ゲート弁５１と基板搬出用の真空開閉手段、
例えば、ゲート弁５２とが、この場合、ゲート弁（資）
が設けられた側壁と直角方向の側壁に設けられた真空予
備室ωと、真空予備室ω内で基板加を搬送する基板搬送
手段、例えば、公知の搬送ベルト（図示省略）と、真空
処理室Ｉと真空予備室ωとの間でバッファ家信を介して
基板加を搬送する基板搬送手段７ｏとで構成アーム７１
を部分回動駆動する駆動Ｍ置（図示省略）八 と、基板のせ具７２とで構成されている。この場合、駆
動装置は、その回動する軸７３の上端部をバッファ室４
０内に気密に突出して設けられ、アーム７１の一端は軸
７３に設けられている。また、アーム７１の他端には、
真空処理室力並びに真空予備室ωで基板加を受渡し可能
に基板のせ具７２が設けられているＯ 基板をシリーズ処理する場合は、第２図で、このような
真空処理モジュールを、例えば、２モジ％ ニール、真空処理７間で基板を搬送可能に構設する。つ
まり、第１の真空処理モジュール１０　ａを構成するバ
ッファ室４０ａと第２の真空処理モジュール１０　ｂを
構成するバッファ室４０　ｂとの間には、搬送用真空室
（資）が設けられ、バッファ室４０ａ、４０ｂの搬送用
真空室（資）と対応する側壁には、例えば、スリット（
図示省略）が設けられている。第１の真空処理モジエー
ル１０　ａを構成する真空処理室（９）ａと第２の真空
処理モジュール１０　ｂを構成する真空処理室３Ｑｂと
の間でバッフ１室４０ａ、４０ｂおよび搬送用真空室帥
を介して基板頷を搬送する基板搬送手段匍は、例えば、
アーム９１と、アーム９１を部分回動駆動する駆動装置
（図示省略）と、基板のせ具９２とで構成されている。In FIG. 1, the vacuum processing module 10 includes a vacuum processing chamber (9) in which substrate processing is performed in a dry process and a buffer chamber provided to allow substrate processing to be carried in and out between the vacuum processing chamber and the vacuum processing chamber. and a vacuum opening/closing means provided in the buffer chamber, for example, between a gate valve, and a vacuum opening/closing means for carrying in a substrate, for example, a gate valve 51 and a vacuum opening/closing means for carrying out a substrate,
For example, in this case, the gate valve 52 is a gate valve (capital).
a vacuum preparatory chamber ω provided on a side wall perpendicular to the side wall provided with the vacuum preparatory chamber ω, a substrate transport means for transporting the substrate within the vacuum preparatory chamber ω, such as a known transport belt (not shown), and a vacuum processing chamber. An arm 71 consisting of a substrate transport means 7o for transporting the substrate between I and the vacuum preliminary chamber ω via a buffer line.
It is composed of a drive M position (not shown) which partially rotates the substrate, and a substrate mounting tool 72. In this case, the drive device connects the upper end of the rotating shaft 73 to the buffer chamber 4.
One end of the arm 71 is provided on a shaft 73. Moreover, at the other end of the arm 71,
A substrate mounting tool 72 is provided to enable transfer of substrate pressure in the vacuum processing chamber and the vacuum preparatory chamber ω. The structure is such that the substrate can be transferred between modi% Neil and vacuum processing 7. In other words, a transfer vacuum chamber is provided between the buffer chamber 40a of the first vacuum processing module 10a and the buffer chamber 40b of the second vacuum processing module 10b. For example, a slit (
(not shown) is provided. A buffer chamber 40a, 40b and a transfer vacuum chamber are provided between the vacuum processing chamber (9)a which constitutes the first vacuum processing module 10a and the vacuum processing chamber 3Qb which constitutes the second vacuum processing module 10b. The substrate conveying means for conveying the substrate through, for example,
It is composed of an arm 91, a drive device (not shown) that partially rotates the arm 91, and a substrate mounting tool 92.

この場合、駆動装置は、その回動する軸９３の上端部を
搬送用真空室（資）内に気密に突出して設けられ、アー
ム９１の一端は軸９３に設けられている。また、アーム
９１の他端には、真空処理室３０ａ、３０ｂで基板粉を
受渡し可能に基板のせ具９２が設けられている。したが
って、バッファ室４０ａ、４０ｂに設けられるスリット
は、基板加をのせた状態で基板のせ具９２が通過できる
形状寸法であり、また、この場合は、第１の真空処理モ
ジュール１０　ａを構成する真空予備室６０ａに設けら
れた基板搬出用のゲート弁５２　ａと第２の真空処理モ
ジュール１０　ｂを構成する真空予備室６０ｂに設けら
れた基板搬入用のゲート弁５１　ｂとは始終閉止されて
いる。In this case, the drive device is provided so that the upper end of its rotating shaft 93 protrudes airtight into the transfer vacuum chamber (equipment), and one end of the arm 91 is provided on the shaft 93. Further, a substrate mounting tool 92 is provided at the other end of the arm 91 so as to be able to transfer substrate powder between the vacuum processing chambers 30a and 30b. Therefore, the slits provided in the buffer chambers 40a and 40b have a shape and size that allows the substrate mounting tool 92 to pass through with the substrate loaded thereon. The gate valve 52a for carrying in substrates provided in the preliminary chamber 60a and the gate valve 51b for carrying in substrates provided in the vacuum preliminary chamber 60b constituting the second vacuum processing module 10b are always closed. .

このように構成された真空処理装置において、真空予備
室６０ａを基板ローディング用、真空予備室６０ｂを基
板アンローディング用とし、真空予備室６０ａのゲート
弁５１　ａに対応して真空予備室６Ｏａ外に間欠昇降す
るカセット載置台ｉｏｏが、真空予備室６０ｂのゲート
弁５２　ｂに対応して真空予備室印す外に間欠昇降する
カセット載置台１０１が設けられ、また、カセット載置
台１００に所定枚数の基板（９）が収納されたカセット
１１０がその開放面をゲート弁５１　ａに対応して載置
され、カセット載置台１０１に空のカセット１１１がそ
の開放面をゲート弁５２　ｂに対応して載置されている
ものとする。In the vacuum processing apparatus configured in this manner, the vacuum preliminary chamber 60a is used for substrate loading, the vacuum preliminary chamber 60b is used for substrate unloading, and a vacuum chamber 60a is connected to the outside of the vacuum preliminary chamber 6Oa in correspondence with the gate valve 51a of the vacuum preliminary chamber 60a. A cassette mounting table 101, which is moved up and down intermittently, is provided outside the vacuum preliminary chamber corresponding to the gate valve 52b of the vacuum preliminary chamber 60b. A cassette 110 containing a substrate (9) is placed with its open side corresponding to the gate valve 51a, and an empty cassette 111 is placed on the cassette mounting table 101 with its open side corresponding to the gate valve 52b. It is assumed that the

例えば、カセット載置台１００により最上方位置に上昇
させられたカセット１１０の下部側からは、公知の他の
搬送手段（図示省略）により基板加が１枚取り出され、
この基板加は、開放しているゲート弁５１　ａを介して
真空予備室６０ａに搬入された後に、搬送ベルトに受取
られる。その後、公知の他の搬送手段は、真空予備室６
０ａ外鴫こ退出させられゲート弁５１　ａは閉止されて
真空予備室６０ａは所定圧力に減圧排気されているバッ
ファ室４０　ａと同程度の圧力まで減圧排気されるうそ
の後、ゲート弁５０　ａを開放し、この状態で、バッフ
ァ室４０　ａ　ｌこ待機している基板搬送手段７０　ａ
の基板のせ具７２　ａをゲート弁５０ａを介して真空予
備室６０ａに搬送ベルト力）ら基板（５）を受取り可能
に、二の場合は反時計回り方向に回転させる。基板のせ
具７２　ａが搬送ベルトから基板２０′２１−受取った
後に、この状態で、基板のせ具７２　ａを時計回り方向
に回転させ、これにより基板加は真空処理室３０ａに搬
送される。その後、基板のせ具７２　ａはバッフ１室４
０ａの待機位置まで戻され、ゲート弁５０ａは閉止され
て基板加は、真空処理室３０ａで所定処理される。なお
、真空処理室３０ａでの所定処理中、真空予備室６０ａ
には、次の基板加が搬入される。基板加の真空処理室３
０ａでの所定処理終了後、搬送用真空室（資）に待機し
ている基板搬送手段匍の基板のせ具霧なスリットを介し
バッフ１室４０ａを経て真空処理室３０ａで基板加を受
取り可能に反時計回り方向に回転させる。基板のせ具象
が真空処理室３０ａで基板２０を受取った後に、この状
態で、基板のせ具９２を時計回り方向に回転させ、これ
により基板加は、真空処理室３０ａからバッファ室４０
ａ、４０ｂおよび搬送用真空室（資）を介して真空処理
室３０ｂに搬送される。For example, one substrate is taken out from the lower side of the cassette 110 that has been raised to the uppermost position by the cassette mounting table 100 by another known transport means (not shown).
This substrate is transferred to the vacuum preliminary chamber 60a via the open gate valve 51a, and then received by the conveyor belt. Thereafter, other known transport means are used in the vacuum pre-chamber 6.
0a is exited, the gate valve 51a is closed, and the vacuum preliminary chamber 60a is depressurized and evacuated to the same pressure as the buffer chamber 40a, which is evacuated to a predetermined pressure. After that, the gate valve 50a is closed. In this state, the buffer chamber 40a is opened and the substrate transfer means 70a is on standby.
In the second case, the substrate mounting tool 72a is rotated counterclockwise so as to be able to receive the substrate (5) from the conveyor belt force into the vacuum preliminary chamber 60a via the gate valve 50a. After the substrate mounting tool 72a receives the substrate 20'21- from the conveyor belt, the substrate mounting tool 72a is rotated clockwise in this state, thereby transporting the substrate to the vacuum processing chamber 30a. After that, the substrate mounting tool 72a is placed in the buffer 1 chamber 4.
It is returned to the standby position 0a, the gate valve 50a is closed, and the substrate is subjected to a predetermined process in the vacuum processing chamber 30a. Note that during a predetermined process in the vacuum processing chamber 30a, the vacuum preparatory chamber 60a
The next board will be loaded. Vacuum processing chamber 3 for substrate processing
After the predetermined processing at 0a is completed, the substrate can be received in the vacuum processing chamber 30a through the buffer 1 chamber 40a through the slit of the substrate transfer means waiting in the transfer vacuum chamber (equipment). Rotate counterclockwise. After the substrate mounting device receives the substrate 20 in the vacuum processing chamber 30a, in this state, the substrate mounting tool 92 is rotated clockwise, thereby transferring the substrate from the vacuum processing chamber 30a to the buffer chamber 40.
a, 40b and a transfer vacuum chamber (equipment) to the vacuum processing chamber 30b.

その後、基板のせ具象は、搬送用真空室（資）の待機位
置まで戻され、基板加は真空処理室３０ｂで引続き所定
処理される。なお、この場合、真空処理室３０ａから真
空処理室３０ｂへの基板の搬送時には、真空予備室６０
ａから真空処理室３０ａへ基板囚が搬送され、真空処理
室３０ｂでの所定処理と共に真空処理室３０ａでの所定
処理が実施される。また、真空処理室３０ａ、３０ｂで
の所定処理中、真空予備室６０ａには、次の基板加が搬
入される。基板加の真空処理室３０ｂでの所定処理終了
後、バッフ１室４０ｂに待機している基板搬送手段７０
ｂの基板のせ具し ７２ｋを真空処理室３０ｂで基板加を受取り可能に反時
計回り方向に回転させる。基板のせ具７２　ｂが真空処
理室３０ｂで基板２０１受取った後に、この状態で、基
板のせ具７２ｂを時計回り方向に回転させ、これにより
、基板加は、ゲート弁５０ｂを介し真空予備室６０ｂに
搬入され搬送ベルトに受取られる。Thereafter, the substrate-mounted object is returned to the standby position of the transfer vacuum chamber (equipment), and the substrate is continued to be processed in a predetermined manner in the vacuum processing chamber 30b. In this case, when transferring the substrate from the vacuum processing chamber 30a to the vacuum processing chamber 30b, the vacuum preparatory chamber 60
A substrate is transported from a to the vacuum processing chamber 30a, and predetermined processing is performed in the vacuum processing chamber 30a as well as a predetermined processing in the vacuum processing chamber 30b. Further, during a predetermined process in the vacuum processing chambers 30a and 30b, the next substrate is loaded into the vacuum preliminary chamber 60a. After the predetermined processing in the vacuum processing chamber 30b for applying the substrate is completed, the substrate transfer means 70 is placed on standby in the first buffer chamber 40b.
The substrate mounting tool 72k of b is rotated counterclockwise in the vacuum processing chamber 30b so as to be able to receive the substrate. After the substrate mounting tool 72b receives the substrate 201 in the vacuum processing chamber 30b, the substrate mounting tool 72b is rotated clockwise in this state, whereby the substrate is loaded into the vacuum preliminary chamber 60b via the gate valve 50b. It is carried in and received by the conveyor belt.

その後、基板のせ具７２ｂはバッフ１室４０　ｂの待機
位置まで戻され、ゲート弁５０ｂは閉止される。その後
、基板加は、ゲート弁５２　ｂ近傍まで搬送されゲート
弁５２　ｂを開放することで公知の他の搬送手段（図示
省略）により真空予備室６Ｏｂ外へ搬出されカセット１
１１に収納される。なお、この場合、基板加の真空処理
室３０ｂから真空予備室６０ｂへの搬送時には、真空処
理室３０ａから真空処理室３０ｂへ基板加が搬送される
と共Ｉこ、真空予備室６０ａから真空処理室３０ａへ基
板加が搬送される。また、真空処理室３０ａ、３０ｂで
の所定処理中、真空予備室６０ａには、次の基板笈が搬
入される。以上のような操作を順次実施することで、カ
セット１１０に収納された基板加は、１枚毎にシリーズ
処理されカセット１１１に順次収納される〜 また、基板をパラレル処理する場合は、第２図で、第１
の真空処理モジュール１０　ａと第２の真空処理モジュ
ール１０　ｂとを真空予備室間で基板を搬送可能壷こ構
設する。つまり、真空予備室６０ａ、６０ｂとの間にゲ
ート弁５２ａ、５１ｂと対応して搬送用真空室８１を設
け、真空予備室６０ａ内を搬送ベルトで搬送されてきた
基板加を真空予備室６０ｂの搬送ベルトに渡す公知の他
の基板搬送手段、例えば、搬送ベルト（図示省略）を搬
送用真空室８１に設ける。Thereafter, the substrate mounting tool 72b is returned to the standby position of the first buffer chamber 40b, and the gate valve 50b is closed. Thereafter, the substrate is transported to the vicinity of the gate valve 52b, and by opening the gate valve 52b, the cassette 1 is transported out of the vacuum preliminary chamber 6Ob by another known transport means (not shown).
It is stored in 11. In this case, when the substrate is transferred from the vacuum processing chamber 30b to the vacuum preparatory chamber 60b, the substrate is transferred from the vacuum processing chamber 30a to the vacuum processing chamber 30b. A substrate is transported to the chamber 30a. Further, during predetermined processing in the vacuum processing chambers 30a and 30b, the next substrate is carried into the vacuum preparatory chamber 60a. By sequentially performing the above operations, the substrates stored in the cassette 110 are serially processed one by one and stored in the cassette 111. Also, when processing the substrates in parallel, as shown in FIG. So, the first
A vacuum processing module 10a and a second vacuum processing module 10b are constructed so that substrates can be transferred between the vacuum preparatory chambers. In other words, a transfer vacuum chamber 81 is provided between the vacuum preparatory chambers 60a and 60b in correspondence with the gate valves 52a and 51b, and the substrates transported by the conveyor belt in the vacuum preparatory chamber 60a are transferred to the vacuum preparatory chamber 60b. Another known substrate conveying means, for example, a conveyor belt (not shown) is provided in the conveyance vacuum chamber 81 to pass the substrate to the conveyor belt.

このような真空処理装置では、真空予備室６０ａから真
空処理室３０ａに搬送され、真空処理室３０ａで所定処
理された基板却は、真空処理室・３０ａから真空予備室
６０ａに戻された後にゲート弁５２ａ、５１ｂを介し搬
送用真空室８１を経て真空予備室６０ｂに搬入され、そ
の後、ゲート弁５２　ｂを介し真空予備室６ｏｂ外へ搬
出されてカセットｌｌｌに収納さレル０また、真空処理
室３０ｂには、カセット１１０からゲート弁５１　ａを
介し真空予備室６０ａに搬入され、引続きゲート弁５２
ａ、５１ｂを介し搬送用真空室８１を経て真空予備室６
ｏｂに搬入された基板加が真空予備室６０ｂから搬送さ
れる。真空処理室３０ｂで所定処理された基板加は、真
空処理室３０ｂから真空予備室６０ｂに戻された後にゲ
ート弁５２　ｂを介し真空予備室６Ｏｂ外へ搬出されて
カセット１１１に収納される。In such a vacuum processing apparatus, the substrate is transported from the vacuum preparatory chamber 60a to the vacuum processing chamber 30a, and is processed in a predetermined manner in the vacuum processing chamber 30a. It is carried into the vacuum preliminary chamber 60b via the transfer vacuum chamber 81 via the valves 52a and 51b, and then carried out to the outside of the vacuum preliminary chamber 60b via the gate valve 52b and stored in a cassette. 30b, the cassette 110 is carried into the vacuum preliminary chamber 60a via the gate valve 51a, and then the gate valve 52
a, 51b, and the vacuum preliminary chamber 6 via the transfer vacuum chamber 81.
The substrate loaded into the ob is transported from the vacuum preliminary chamber 60b. The substrates that have been subjected to a predetermined process in the vacuum processing chamber 30b are returned from the vacuum processing chamber 30b to the vacuum preliminary chamber 60b, and then carried out of the vacuum preliminary chamber 6Ob via the gate valve 52b and stored in a cassette 111.

本実施例のような真空処理装置では、次のような効果が
得られる。The vacuum processing apparatus like this embodiment provides the following effects.

（１）使用目的に対応した真空処理モジュールの構設の
仕方により、基板の処理の仕方をシリーズ処理、パラレ
ル処理いずれかに任意に選択することができる７ （２）基板をシリーズ処理する場合、真空処理空間での
基板の搬送を真空予備室を経る二となしに行えるため、
搬送ステップを減少でき搬送時間を短縮できる。(1) Depending on the configuration of the vacuum processing module that corresponds to the purpose of use, the method of processing the substrates can be arbitrarily selected as either series processing or parallel processing7 (2) When processing the substrates in series, Because substrates can be transported in the vacuum processing space without having to pass through the vacuum preliminary chamber,
The number of transportation steps can be reduced and the transportation time can be shortened.

（３）処理途中で次の真空処理室に処理を引継く゛よう
なプロセス工程にも問題なく適用できる。(3) It can be applied without problems to process steps where the process is transferred to the next vacuum processing chamber midway through the process.

（４）装置の専有床面積を考慮した場合でも真空処理モ
ジュールのモジュール数の限定を従来技術よりも緩和で
き幅広いプロセスへの使用が容易となる。(4) Even when considering the exclusive floor space of the apparatus, the limitation on the number of vacuum processing modules can be relaxed compared to the conventional technology, making it easier to use in a wide range of processes.

なお、真空予備室と真空処理室との間並びに真空処理室
間で基板を搬送する基板搬送手段として、この他に、公
知の基板搬送手段、例えば、搬送ベルトな用いても良い
。In addition to the above, known substrate transport means such as a transport belt may be used as the substrate transport means for transporting the substrate between the vacuum preliminary chamber and the vacuum processing chamber and between the vacuum processing chambers.

〔発明の効果〕〔Effect of the invention〕

本発明は、以上説明したように、真空処理室と、該室と
の間で基板を搬入出可能に設けられたバッフ１室と、該
室に真空開閉手段を介し共役されると共に基板搬入用の
真空開閉手段と基板搬出用の真空開閉手段とが設けられ
た真空予備室と、該室内で基板を搬送する基板搬送手段
と、真空処理室と真空予備室との間でバッフ１室を介し
て基板を搬送する基板搬送手段で構成された真空処理モ
ジュールを、真空処理室間で基板を搬送可能若しくは真
空予備室間で基板を搬送可能に少な曵とも２モジユール
構設したことで、使用目的に応じて基板のシリーズ処理
、パラレル処理を任意に選択することができ、フレキシ
ビリティに富んだ高スループツトの真空処理装置を提供
できる効果がある。As explained above, the present invention includes a vacuum processing chamber, a buffer chamber provided so that substrates can be carried in and out between the chamber, and a buffer chamber that is conjugated to the chamber via a vacuum opening/closing means and is used for carrying in substrates. A vacuum preliminary chamber provided with a vacuum opening/closing means for transporting a substrate and a vacuum opening/closing means for carrying out a substrate, a substrate transport means for transporting a substrate within the chamber, and a buffer chamber between the vacuum processing chamber and the vacuum preliminary chamber. By constructing at least two vacuum processing modules that can transport substrates between vacuum processing chambers or between vacuum preparatory chambers, the vacuum processing module consists of a substrate transport means that transports substrates. Series processing or parallel processing of substrates can be arbitrarily selected depending on the requirements, and it is possible to provide a highly flexible and high-throughput vacuum processing apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図は、本発明による真空処理装置の一実施
例を示すもので、＄１図は、真空処理モジュールの平面
構成図、第２図は、第１図の真空処理モジュールが２モ
ジユール構設された真空処理装置の平面構成図である。 １０　、１０　ａ　、　１０　ｂ・・・・・・真空処理
モジュール、加・・・基板、３Ｇ、　３０　ａ　、　３
０　ｂ　”−・真空処理室、４０．４０ａ。1 and 2 show an embodiment of the vacuum processing apparatus according to the present invention. FIG. 1 is a plan view of the vacuum processing module, and FIG. FIG. 2 is a plan configuration diagram of a vacuum processing apparatus configured with two modules. 10, 10a, 10b...vacuum processing module, processing substrate, 3G, 30a, 3
0 b ”--Vacuum processing chamber, 40.40a.

Claims (1)

【特許請求の範囲】 公 １、　真空処理室と、該室との間で基板を搬へ７可能に
設けられたバッフ１室と、該室に真空開閉手段を介し共
役されると共に基板搬入用の真空開閉用手段と基板搬出
用の真空開閉手段とが設はとの間で前記バッフ１室を介
して基板を搬送する基板搬送手段とで構成された真空処
理モジュールを、前記真空処理室間で基板を搬送可能若
し畷は前記真空予備室間で基板を搬送可能に少なくとも
２モジユール構設したことを特徴とする真空処理装置。 ２、ｗ記真空処理モジュールを搬送用真空室を介し少な
曵とも２モジユール構設すると共に、前記バッファ室お
よび搬送用真空室を介し前記真空室間で基板を搬送する
基板搬送手段若し曵は、搬送用真空室を介して前記真空
予備室間で基板を搬送する基板搬送手段を設けた特許請
求の範囲第１項記載の真空処理装置−[Claims] Publication 1. A vacuum processing chamber, a buffer chamber provided to allow substrates to be transferred between the chamber, and a buffer chamber conjugated to the chamber via a vacuum opening/closing means and for transferring substrates. A vacuum processing module consisting of a vacuum opening/closing means for carrying out the substrate and a substrate transporting means for transporting the substrate through the one buffer chamber is installed between the vacuum processing chambers. A vacuum processing apparatus comprising at least two modules capable of transporting substrates between the vacuum preparatory chambers. 2. Constructing at least two modules of the vacuum processing module (w) via a transfer vacuum chamber, and a substrate transfer means or lever for transferring the substrate between the vacuum chambers via the buffer chamber and the transfer vacuum chamber. The vacuum processing apparatus according to claim 1, further comprising a substrate transport means for transporting the substrate between the vacuum preparatory chambers via a transport vacuum chamber.
JP19241083A 1983-10-17 1983-10-17 Vacuum treating apparatus Pending JPS6085527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19241083A JPS6085527A (en) 1983-10-17 1983-10-17 Vacuum treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19241083A JPS6085527A (en) 1983-10-17 1983-10-17 Vacuum treating apparatus

Publications (1)

Publication Number Publication Date
JPS6085527A true JPS6085527A (en) 1985-05-15

Family

ID=16290850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19241083A Pending JPS6085527A (en) 1983-10-17 1983-10-17 Vacuum treating apparatus

Country Status (1)

Country Link
JP (1) JPS6085527A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6383286A (en) * 1986-09-27 1988-04-13 Anelva Corp Etching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6383286A (en) * 1986-09-27 1988-04-13 Anelva Corp Etching device

Similar Documents

Publication Publication Date Title
US6487793B2 (en) Vacuum processing apparatus and operating method therefor
JPH0533529B2 (en)
JP6212063B2 (en) Substrate transfer robot and substrate processing apparatus using the same
JP2001118904A5 (en)
JPS6085527A (en) Vacuum treating apparatus
JPH06140492A (en) Cluster device
JPS60102744A (en) Vacuum treater
JPH1079412A (en) Apparatus for manufacturing semiconductor
JP2000049215A (en) Processing system
JPH0252449A (en) Loading and unloading of substrate
JPH0237742A (en) Semiconductor device manufacturing equipment
JPH04271139A (en) Semiconductor manufacturing equipment
USRE39824E1 (en) Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors
JPH0265252A (en) Semiconductor manufacturing device
JP2000091398A (en) Substrate processing equipment
JP2002263548A (en) Coating forming apparatus and coating forming method
JP2007258396A (en) Plasma treatment apparatus and method
KR101929872B1 (en) Substrate treating apparatus and substrate treating method
JPH02144333A (en) Substrate conveying method
JPH053174A (en) Manufacture of semiconductor device
JP2505263Y2 (en) Wafer transfer device for wafer surface treatment device
JPH04233729A (en) Transferring apparatus for cleaned body in cleaning device
JP3730803B2 (en) Substrate attitude changing apparatus and method
JPH05106026A (en) Method and equipment for producing thin multilayered film
JP2533706B2 (en) Substrate transfer method and apparatus