JPS6442130A - Sputter etching device - Google Patents

Sputter etching device

Info

Publication number
JPS6442130A
JPS6442130A JP62198200A JP19820087A JPS6442130A JP S6442130 A JPS6442130 A JP S6442130A JP 62198200 A JP62198200 A JP 62198200A JP 19820087 A JP19820087 A JP 19820087A JP S6442130 A JPS6442130 A JP S6442130A
Authority
JP
Japan
Prior art keywords
plasma
substrate
microwaves
cavity
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62198200A
Other languages
Japanese (ja)
Other versions
JPH0831443B2 (en
Inventor
Yasumichi Suzuki
Yutaka Saito
Shunji Sasabe
Kazuhiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19820087A priority Critical patent/JPH0831443B2/en
Priority to KR1019880008942A priority patent/KR920002864B1/en
Priority to US07/221,272 priority patent/US5021114A/en
Priority to DE3854541T priority patent/DE3854541T2/en
Priority to EP88111684A priority patent/EP0300447B1/en
Publication of JPS6442130A publication Critical patent/JPS6442130A/en
Publication of JPH0831443B2 publication Critical patent/JPH0831443B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To realize a high-speed etching operation and to reduce the damage to a substrate by a method wherein a high-density plasma is generated by a plasma generation means using microwaves, a cavity is used as a cavity resonator of the microwaves and the diffusion of the generated plasma to its circumference is prevented by a magnetic field. CONSTITUTION:A plasma generation means 2 is installed in a vacuum tank 1 to be face to face with an etching electrode 6 to mount a substrate 5; microwaves are used to generate this plasma; a highdensity plasma is generated on the substrate 5; the diffusion of the plasma to its circumference is prevented by a magnetic-field generation means 16; ions in the plasma collide with the substrate 5 by using a voltage generated by the electric power which has been impressed on the etching electrode 6. During this process, a matching means 13 is installed at a cavity 12, the cavity 12 is used as a cavity resonator of the microwaves. By this setup, it is possible to obtain a sputter etching device whose etching speed is fast and which does not damage the substrate.
JP19820087A 1987-07-20 1987-08-10 Plasma processing device Expired - Lifetime JPH0831443B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP19820087A JPH0831443B2 (en) 1987-08-10 1987-08-10 Plasma processing device
KR1019880008942A KR920002864B1 (en) 1987-07-20 1988-07-18 Apparatus for treating matrial by using plasma
US07/221,272 US5021114A (en) 1987-07-20 1988-07-19 Apparatus for treating material by using plasma
DE3854541T DE3854541T2 (en) 1987-07-20 1988-07-20 Method and device for treating a material by plasma.
EP88111684A EP0300447B1 (en) 1987-07-20 1988-07-20 Method and apparatus for treating material by using plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19820087A JPH0831443B2 (en) 1987-08-10 1987-08-10 Plasma processing device

Publications (2)

Publication Number Publication Date
JPS6442130A true JPS6442130A (en) 1989-02-14
JPH0831443B2 JPH0831443B2 (en) 1996-03-27

Family

ID=16387142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19820087A Expired - Lifetime JPH0831443B2 (en) 1987-07-20 1987-08-10 Plasma processing device

Country Status (1)

Country Link
JP (1) JPH0831443B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5762814A (en) * 1990-09-28 1998-06-09 Hitachi, Ltd. Plasma processing method and apparatus using plasma produced by microwaves
WO2003052807A1 (en) * 2001-12-14 2003-06-26 Tokyo Electron Limited Plasma processor
WO2024018960A1 (en) * 2022-07-20 2024-01-25 東京エレクトロン株式会社 Plasma processing device and plasma processing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5762814A (en) * 1990-09-28 1998-06-09 Hitachi, Ltd. Plasma processing method and apparatus using plasma produced by microwaves
WO2003052807A1 (en) * 2001-12-14 2003-06-26 Tokyo Electron Limited Plasma processor
WO2024018960A1 (en) * 2022-07-20 2024-01-25 東京エレクトロン株式会社 Plasma processing device and plasma processing method

Also Published As

Publication number Publication date
JPH0831443B2 (en) 1996-03-27

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