JPS5558371A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS5558371A
JPS5558371A JP13054578A JP13054578A JPS5558371A JP S5558371 A JPS5558371 A JP S5558371A JP 13054578 A JP13054578 A JP 13054578A JP 13054578 A JP13054578 A JP 13054578A JP S5558371 A JPS5558371 A JP S5558371A
Authority
JP
Japan
Prior art keywords
electrode
electric power
high frequency
film
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13054578A
Other languages
Japanese (ja)
Other versions
JPS5621836B2 (en
Inventor
Sukeyoshi Tsunekawa
Yukiyoshi Harada
Yoshio Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13054578A priority Critical patent/JPS5558371A/en
Publication of JPS5558371A publication Critical patent/JPS5558371A/en
Publication of JPS5621836B2 publication Critical patent/JPS5621836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Abstract

PURPOSE:To form a flat and uniform thickness film in a short time, by dividing high frequency electric power and applying it on both target electrode and substrate electrode and also, providing planer magnetron type high speed sputtering source at the high frequency sputtering apparatus. CONSTITUTION:Planer magnetron type high speed sputtering source of sputtering apparatus is composed of the permanent magnet 10, the target electrode 8 and the SiO2 target 11. High frequency electric power of the high frequency electric power source 1 is applied on the electrode 8 and the substrate electrode 9 through each matching circuit 5, 6. The electric power applied on the electrode 9, is divided by the dividing condenser 3. Atmosphere of the sputtering chamber 14 is made low pressure Ar atmosphere and on occasion demands, the magnetic field generator 7 generating the magnetic field vertical to the face of the electrode 9, is provided. By using the above apparatus, insulating film, semiconductor film or metal film, are formed on the uneven substrate 13 with a high speed so as to be the surface of the film flat.
JP13054578A 1978-10-25 1978-10-25 Sputtering apparatus Granted JPS5558371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13054578A JPS5558371A (en) 1978-10-25 1978-10-25 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13054578A JPS5558371A (en) 1978-10-25 1978-10-25 Sputtering apparatus

Publications (2)

Publication Number Publication Date
JPS5558371A true JPS5558371A (en) 1980-05-01
JPS5621836B2 JPS5621836B2 (en) 1981-05-21

Family

ID=15036835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13054578A Granted JPS5558371A (en) 1978-10-25 1978-10-25 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5558371A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164228A (en) * 1982-03-25 1983-09-29 Toshiba Corp Formation of dielectric thin film
JPS5923878A (en) * 1982-07-28 1984-02-07 Kokusai Electric Co Ltd Plasma etching device
JPS60185656U (en) * 1984-05-21 1985-12-09 株式会社豊田中央研究所 High frequency sputtering device
JPS619571A (en) * 1984-06-22 1986-01-17 Tanaka Kikinzoku Kogyo Kk Manufacture of thin film
JPH01309963A (en) * 1988-06-08 1989-12-14 Matsushita Electric Ind Co Ltd Sputtering device
JP2011521433A (en) * 2008-05-21 2011-07-21 アプライド マテリアルズ インコーポレイテッド Thin film battery and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063367A (en) * 1983-09-14 1985-04-11 Tokuda Seisakusho Ltd Sputtering device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.VAC.SCI TECHNOL=1977 *
JOURNAL OF PHYSICS E SCIEMTIFIC INSTRUMENTS=1972 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164228A (en) * 1982-03-25 1983-09-29 Toshiba Corp Formation of dielectric thin film
JPS5923878A (en) * 1982-07-28 1984-02-07 Kokusai Electric Co Ltd Plasma etching device
JPH0336907B2 (en) * 1982-07-28 1991-06-03 Kokusai Electric Co Ltd
JPS60185656U (en) * 1984-05-21 1985-12-09 株式会社豊田中央研究所 High frequency sputtering device
JPS619571A (en) * 1984-06-22 1986-01-17 Tanaka Kikinzoku Kogyo Kk Manufacture of thin film
JPH01309963A (en) * 1988-06-08 1989-12-14 Matsushita Electric Ind Co Ltd Sputtering device
JP2011521433A (en) * 2008-05-21 2011-07-21 アプライド マテリアルズ インコーポレイテッド Thin film battery and manufacturing method thereof

Also Published As

Publication number Publication date
JPS5621836B2 (en) 1981-05-21

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