JPS5531142A - Pressed magnetic field type magnetron sputter by focusing magnetic field - Google Patents
Pressed magnetic field type magnetron sputter by focusing magnetic fieldInfo
- Publication number
- JPS5531142A JPS5531142A JP10366378A JP10366378A JPS5531142A JP S5531142 A JPS5531142 A JP S5531142A JP 10366378 A JP10366378 A JP 10366378A JP 10366378 A JP10366378 A JP 10366378A JP S5531142 A JPS5531142 A JP S5531142A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- target
- pressed
- sputter
- focusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To improve sputter effect and to increase film-forming rate, by arranging a solenoid coil around a magnet at the back side of a target of a plate magnetron unit and a bell jar so as to strengthen the magnetic field which is parallel to the surface of the target. CONSTITUTION:A solenoid coil 4 is arranged around a bell jar 7 of a plate magnetron sputter apparatus to generate a magnetic field of a polarity equal to the magnetic pole due to a magnet 2 set at the back side center of a target 1. Hereby leakage magnetic field 3 on the surface of the target 1 is pressed by the magnetic field 5 to the target surface, consequently most portion of the leakage magnetic field 3 on the surface is used effectively as a magnetic field component parallel with the surface, so that the sputter efficiency and the film-forming rate are increased. The solenoid 4 performs simultaneously its duty as a focusing magnetic field to change the strength of the magnetic field (the current of the coil) also after the saturation of the current and makes it possible to control the area of uniform film thickness according to the surface area of the substrate 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10366378A JPS5531142A (en) | 1978-08-25 | 1978-08-25 | Pressed magnetic field type magnetron sputter by focusing magnetic field |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10366378A JPS5531142A (en) | 1978-08-25 | 1978-08-25 | Pressed magnetic field type magnetron sputter by focusing magnetic field |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5531142A true JPS5531142A (en) | 1980-03-05 |
Family
ID=14360016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10366378A Pending JPS5531142A (en) | 1978-08-25 | 1978-08-25 | Pressed magnetic field type magnetron sputter by focusing magnetic field |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5531142A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58155824U (en) * | 1982-04-13 | 1983-10-18 | ティーディーケイ株式会社 | trimming capacitor |
JPS58189372A (en) * | 1982-04-30 | 1983-11-05 | Toshiba Corp | Magnetron sputtering device |
JPS61124567A (en) * | 1984-11-20 | 1986-06-12 | Matsushita Electric Ind Co Ltd | Sputtering device |
JPH02254160A (en) * | 1989-03-27 | 1990-10-12 | Ube Ind Ltd | Plasma controller |
WO2002011176A1 (en) * | 2000-07-27 | 2002-02-07 | Trikon Holdings Limited | Magnetron sputtering |
US10900114B2 (en) * | 2015-03-31 | 2021-01-26 | Spts Technologies Limited | Method and apparatus for depositing a material |
-
1978
- 1978-08-25 JP JP10366378A patent/JPS5531142A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58155824U (en) * | 1982-04-13 | 1983-10-18 | ティーディーケイ株式会社 | trimming capacitor |
JPS645875Y2 (en) * | 1982-04-13 | 1989-02-14 | ||
JPS58189372A (en) * | 1982-04-30 | 1983-11-05 | Toshiba Corp | Magnetron sputtering device |
JPH0411625B2 (en) * | 1982-04-30 | 1992-03-02 | Toshiba Kk | |
JPS61124567A (en) * | 1984-11-20 | 1986-06-12 | Matsushita Electric Ind Co Ltd | Sputtering device |
JPH02254160A (en) * | 1989-03-27 | 1990-10-12 | Ube Ind Ltd | Plasma controller |
WO2002011176A1 (en) * | 2000-07-27 | 2002-02-07 | Trikon Holdings Limited | Magnetron sputtering |
GB2377228A (en) * | 2000-07-27 | 2003-01-08 | Trikon Holdings Ltd | Magnetron sputtering |
GB2377228B (en) * | 2000-07-27 | 2004-06-30 | Trikon Holdings Ltd | Magnetron sputtering |
US7378001B2 (en) | 2000-07-27 | 2008-05-27 | Aviza Europe Limited | Magnetron sputtering |
US10900114B2 (en) * | 2015-03-31 | 2021-01-26 | Spts Technologies Limited | Method and apparatus for depositing a material |
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